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ELECTRONIC DEVICES LAB MANUAL IIIrd SEMESTER B.E (E&C) (For private circulation only) RAJEEV GANDHI TECHNOLOGICAL UNIVERSITY
RADHARAMAN INSTITUTE OF RESEARCH &TECHNOLOGY RATIBAD, BHOPAL Prepared by: PRADEEP RAGHUWANSHI,MTECH(LECTURER)
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LIST OF EXPERIMENTS
1. V I Characteristics of PN Junction diode . 2. V I Characteristics of Zener diode. 3. V I Characteristics of Varactor Diode. 4. V I Characteristics of Schottky Diode.
5. V I Characteristics of Tunnel Diode. 6. V I Characteristics of Photo Transistor. 7. Study of Clipper & Clamper circuit. 8. Study of Half wave Rectifier with and without filter. 9. V I Common Emitter Configurations (BJT). 10. V I Characteristics of FET .
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Experiment no.1 P-N JUNCTION DIODE CHARACTERISTICS AIM:-To observe and draw the Forward and Reverse bias V-I Characteristics of AIM a P-N Junction diode. APPARATUS:APPARATUS THEORY:THEORY:DIAGRAMs: CIRCUIT DIAGRAMs:FORWARDBIAS:FORWARDBIAS:BIAS:
BIAS:REVERSE BIAS
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WAVEFORM:MODEL WAVEFORM:-
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OBSERVATION:OBSERVATION:-
PRECAUTIONS:PRECAUTIONS 1. All the connections should be correct. 2. Parallax error should be avoided while taking the readings from the Analog meters.
RESULT:- Forward and Reverse Bias characteristics for a p-n diode is observed RESULT:Viva voice:1. What is atomic number? 2. What is the relation for the maximum number of electrons in each shell? 3. What are valence electrons? 4. What is forbidden energy gap? 5. What are conductors? Give examples?
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AIM: - a) To observe and draw the static characteristics of a zener diode b) To find the voltage regulation of a given zener diode APPARATUS: APPARATUS -
Model waveform:-
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PRECAUTIONS:1. The terminals of the zener diode should be properly identified 2. While determined the load regulation, load should not be immediately shorted. 3. Should be ensured that the applied voltages & currents do not exceed the ratings of the diode. Viva voice:1. What are insulators? Give examples? 2. What are Semiconductors? Give examples? 3. What are the types of Semiconductor? 4. What is Intrinsic Semiconductor? 5. What is Extrinsic Semiconductor?
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Experiment no. 3 Characteristics of Varactor Diode AIM: - To study and verify characteristics of Varactor Diode APPRATUS REQURIED:THEORY:Circuit diagram:-
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RESULT:-
Viva voice:1. What is P-type Semiconductor? 2. What is doping? 3. What is N-type Semiconductor? 4. Which is majority and minority carrier in N-type Semiconductor? 5.which is majority and minority carrier in P-type Semiconductor? 6. What is depletion region in PN junction?
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Experiment no. 4 V-I Characteristics of Schottky Diode AIM: - To study and verify characteristics of Schottky Diode APPRATUS REQURIED:THEORY:Circuit symbol:-
V-I CHARACTERISTICS:-
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FIG. Comparison of characteristics of hot-carrier and p-n junction diodes. OBSERVATION TABLE:S.NO
VD
ID
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RESULT:-
Viva voice:1. What is barrier voltage? 2. What is meant by biasing a PN junction? 3. What are the types of biasing a PN junction? 4. What is forward bias and reverse bias in a PN junction? 5. What is Reverse saturation current?
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Experiment no. 5 Characteristics of Tunnel Diode AIM: - To verify the V-I characteristics of tunnel diode APPRATUS REQURIED:THEORY:OBSERVATION TABLE:-
S.NO
VT
IT
IP
IV
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V-I CHARACTERISTICS:-
FIG. Tunnel diode characteristics. Viva voice: 1. Explain the construction, working, characteristics of PN junction diode? 2. Give the diode current equation? 3. Give two applications of PN junction diode. 4. What are semiconductors? Explain the types of semiconductors? 5. What is reverse break down?
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Experiment no. 6 Characteristics of Photo Transistor AIM: - To study and verify characteristics of Photo Transistor. APPRATUS REQURIED:THEORY:The fundamental behavior of photoelectric devices was introduced earlier with the description of the photodiode. This discussion will now be extended to include the phototransistor, which has a photosensitive collectorbase p-n junction. The current induced by photoelectric effects is the base current of the transistor. If we assign the notation for the photoinduced base current, the resulting collector current, on an approximate basis, is
A representative set of characteristics for a phototransistor is provided in Fig. with the symbolic representation of the device. Note the similarities betweenthese curves and those of a typical bipolar transistor. As expected, an increase in lightintensity corresponds with an increase in collector current. To develop a greater de-gree of familiarity with the light-intensity unit of measurement, milli watts per square centimeter, a curve of base current versus flux density appears in Fig.a Note the exponential increase in base current with increasing flux density. In the same figure, a sketch of the phototransistor is provided with the terminal identification and the angular alignment. V-I Characteristics & Circuit symbol:-
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Phototransistor: Fig (a) collector characteristics (b) symbol. OBSERVATION TABLE:ICC VCC
RESULT:-
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Viva voice:1. What is photo transistor? 2. Define the term diffusion capacitance. 3. What is break down? What are its types? 4. Define dynamic resistance. 5. What is the static resistance of a diode?
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Experiment no. 7 Clipper & Clamper circuit AIM: - To design a Clipping circuit for the given specifications and hence to plot its O/P APPARATUS REQUIRED:-
Theory:A clipping circuit consists of linear elements like resistors and non-linear elements like junction diodes or transistors, but it does not contain energy-storage elements like capacitors. Clipping circuits are used to select for purposes of transmission, that part of a signal wave form which lies above or below a certain reference voltage level. PROCEDURE: 1. Connections are made as shown in the circuit diagram. 2. A sine wave Input Vi whose amplitude is greater than the clipping level is applied. 3. Output waveform Vo is observed on the CRO. 4. Clipped voltage is measured and verified with the designed values
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CLAMPING CIRCUITS:AIM:- To design a Clamping circuit for the given specifications and hence to plot its output APPARATUS REQUIRED:-
THEORY:-
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Viva voice:1. What is clipper? 2. What is clamper? 3. Define dynamic conductance 4. Define the term transition capacitance? 5. What is meant by forward recovery time?
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Experiment no. 8 HALF WAVE RECTIFIER AIM: - To obtain the load regulation and ripple factor of a half-rectifier. 1. with Filter 2. without Filter APPARATUS:THEORY:CIRCUIT DIAGRAM:-
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Vm(v)
Vac(v)
Vdc(v)
r= Vac/ Vdc
WITH FILTER:V1(V) V2(V) Vdc= (V1 +V2 )/2 Vac= (V1 V2 )/23 r= Vac / Vdc
PRECAUTIONS:1. The primary and secondary sides of the transformer should be carefully identified. 2. The polarities of the diode should be carefully identified. 3. While determining the % regulation, first Full load should be applied and then it should be decremented in steps. RESULTS:-
Viva voice:1. What is a rectifier? 2. Explain the types of rectifier? 3. What is meant by reverse recovery time? 4. What are break down diodes? 5. Define storage time.
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Experiment no. 9 TRANSISTOR CE CHARACTERSTICS AIM:- 1. To draw the input and output characteristics of transistor connected in CE configuration 2. To find of the given transistor. APPARATUS:-
CIRCUIT DIAGRAM:-
OBSERVATIONS:INPUT CHARACTERISTICS:
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OUTPUT CHARECTERSTICS:-
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PRECAUTIONS:1. The supply voltage should not exceed the rating of the transistor 2. Meters should be connected properly according to their polarities RESULT:1. the input and out put characteristics of a transistor in CE configuration are Drawn 2. the of a given transistor is calculated Viva voice:1. What is transistor? 2. Why NPN transistor is preferred over PNP transistor? 3. What are the terminals present in a transistor? 4. Which of the terminal is heavily doped & which is lightly doped in BJT? 5. Why base is very thin in BJT?
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Experiment no. 10 FET CHARACTERISTICS AIM: a). To draw the drain and transfer characteristics of a given FET. b). To find the drain resistance (rd) amplification factor () and Trans conductance (gm) of the given FET. APPARATUS: -
THEORY:CIRCUIT DIAGRAM:-
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DRAIN CHARACTERISTICS:-
PRECAUTIONS:1. The three terminals of the FET must be care fully identified 2. Practically FET contains four terminals, which are called source, drain, Gate, substrate. 3. Source and case should be short circuited. 4. Voltages exceeding the ratings of the FET should not be applied. RESULT :-
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Viva voice:1. What is FET? 2. Why FET is called unipolar device? 3. Why FET is called voltage controlled device? 4. What are the two main types of FET? 5. ) Define pinch off voltage in FET
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Experiment no. 11 UJT CHARACTERISTICS AIM:- To observe the characteristics of UJT and to calculate the Intrinsic Stand-Off Ratio(). APPARATUS:THEORY:CIRCUIT DIAGRAM:-
V-I CHARACTERISTICS:A graph is plotted between VEE and IE for different values of VBE.
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MODEL GRAPH:-
OBSEVATIONS:
CALCULATIONS:
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RESULT: The characteristics of UJT are observed and the values of Intrinsic Stand-Off Ratio is calculated. Viva voice:1. What is ujt? 2. What is instrinsic stand off ratio?