Exam Support:: MOSFET(D) Equations

n-MOSFET(D):: (I-V) Equations

Cut off Mode
Drain current Gate to Source Voltage Gate to drain Voltage Linear Drain current (VDS < 1V) Triode Drain current

Linear Mode
Gate to Source Voltage Gate to drain Voltage Drain current

iD = 0 VGS < VTN (.) W i D k n (VGS VTN )V DS L W 2 i D = k n (VGS VTN )V DS V DS 2 L VGS > VTN

VGD > VTN

1 W kn 2 L 1 W iD = k n 2 L VGS > VTN

iD =

Saturation Mode

Drain current with Gate to Source Voltage Gate to drain Voltage

2 (VGS VTN ) 2 (VGS VTN ) (1 + VDS )

VGD < VTN VDS = VGS VTN

Linear/Saturation Drain to Source Voltage Boundary

n-MOSFET(D):: Parameters
Process parameter [A/V2] Current Gain [A/V ] Early Voltage Body Effect Parameter [ V ] Oxide Capacitance [F/cm ] Threshold Voltage Zero Potential Current (VGS = 0) Depletion n-MOSFET Threshold Voltage
2 2

k n = nCox

n = kn =
1 VA

W L

= 2qN a / Cox
Cox = K ox o tox

VTN = VTO +

(
2

2 f + VSB 2 f

2 VTN < 0

I DSS

VTN

Dr Ayhan Ozturk I s t a n b u l T e c h n i c a l U n i v e r s i t y

Exam Support:: MOSFET(D) Equations

n-MOSFET(D):: Small Signal Parameters Transconductance [A/V] g m = n (VGS VTN ) Transconductance [A/V] g m = 2kn (W L ) I D
Transconductance [A/V] Transconductance of Body [A/V] Body effect Gate to Source capacitance [F/cm ] Gate to Drain capacitance [F/cm2] Source to Body capacitance [F/cm ]
2 2

gm =

2I D VGS VTN

g mb = g m

= 2 2 f + VSB
C gs =
C gd

2 (W L)Cox + (W Lov )Cox 3 = (W Lov )Cox

Csb =

Csbo VSB 1 + Vo Cdbo 1+ VSB Vo

Drain to Body capacitance [F/cm2]

Cdb =

Maximum operating frequency [Hz]

fT =

gm 2 (C gs + Cgd )

Dr Ayhan Ozturk I s t a n b u l T e c h n i c a l U n i v e r s i t y

Exam Support:: MOSFET(D) Equations

n-MOSFET(D):: Input Characteristics

VGS
iD iD

VGD

Cut off Mode

VGS VTN

IDSS

IDSS

VGS VGD

VTN

VG

iD

iD

Linear Mode
VTN

IDSS

IDSS

VGS VGS

VT VGD

VG

iD

iD

Saturation Mode
VTN

IDSS

IDSS

VGS VGS VGD

VTN

VG

Enhancement Shift all curve to positive Threshold Voltage (VTN > 0) n-MOSFET

Dr Ayhan Ozturk I s t a n b u l T e c h n i c a l U n i v e r s i t y

Exam Support:: MOSFET(D) Equations

p-MOSFET(D):: (I-V) Equations

Cut off Mode
Drain current Gate to Source Voltage Gate to drain Voltage Linear Drain current (|VDS |< 1V) Triode Drain current

Linear Mode
Gate to Source Voltage Gate to drain Voltage Drain current

iD = 0 VGS > VTP (.) W i D k p (VGS VTP )V DS L W 2 i D = k p (VGS VTP )V DS V DS 2 L VGS < VTN

VGD < VTN

1 W kp 2 L 1 W iD = k p 2 L VGS < VTP iD = 2 (VGS VTP ) 2 (VGS VTP ) (1 + V DS )

Saturation Mode

Drain current with Gate to Source Voltage Gate to drain Voltage

VGD > VTP VDS = VGS VTP

Linear/Saturation Drain to Source Voltage Boundary

p-MOSFET(D):: Parameters
Process parameter [A/V2] Current Gain Early Voltage Body Effect Parameter Oxide Capacitance Threshold Voltage Zero Potential Current (VGS = 0) Depletion p-MOSFET Threshold

k p = p C ox

p = kp =
1 VA

W L

= 2qN d / C ox
Cox = K ox o tox

VTP = VTO +

(
2

2 f + V SB 2 f

I DSS

p
2

VTP

VTP > 0

Dr Ayhan Ozturk I s t a n b u l T e c h n i c a l U n i v e r s i t y

Exam Support:: MOSFET(D) Equations

p-MOSFET(D):: Small Signal Parameters Transconductance [A/V] g m = P (VGS VTP ) Transconductance [A/V] g m = 2k P (W L ) I D
Transconductance [A/V] Transconductance of Body [A/V] Body effect Gate to Source capacitance [F/cm2] Gate to Drain capacitance [F/cm2] Source to Body capacitance [F/cm ]
2

gm =
g mb

2I D VGS VTP = gm

= 2 2 f + VSB
C gs =
C gd

2 (W L)Cox + (W Lov )Cox 3 = (W Lov )Cox

Csb =

Csbo VSB 1 + Vo Cdbo 1+ VSB Vo

Drain to Body capacitance [F/cm2]

Cdb =

Maximum operating frequency [Hz]

fT =

gm 2 (C gs + Cgd )

Dr Ayhan Ozturk I s t a n b u l T e c h n i c a l U n i v e r s i t y

Exam Support:: MOSFET(D) Equations

p-MOSFET(D):: Input Characteristics

VGS
iD iD

VGD

Cut off Mode

IDSS

IDSS

VTP

VGS VGS VTP VGD

VGD

iD

iD

Linear Mode

IDSS

IDSS

VGS VGS VTN VGDQ

VGD VTP

iD

iD

Saturation Mode

IDSS

IDSS

VGS VGS VTN VTP VGD

VGD

Enhancement Shift all curve to negative Threshold Voltage (VTP < 0) p-MOSFET

Dr Ayhan Ozturk I s t a n b u l T e c h n i c a l U n i v e r s i t y