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Click to add Fairchild Semiconductor presentation titleCatalog Automotive Product

Mauricio Vergara Click to edit Master subtitle


December 2012 Click to add date

Whats New?
New releases ISL9V5045S3ST_F085 Code S released FDD10AN06A0_F085 Code S released.

New Planned devices Planned FS Planar IGBTs Page 23 Planned FS Trench IGBTs Page 24 Planned Rectifiers Page 25

Automotive Product Catalog


Notes: An AEC-Q101 qualified product does not automatically guarantee a PPAP will be provided. Please contact the automotive marketing group with your business case if a PPAP is required.

Table of Contents Page (hyperlinked) 1. AEC-Q100/AEC-Q101 Qualified Devices HVIC Gate Drivers Low Side Gate Drivers Smart Switch devices IGBTs Rectifiers Integrated Injector Driver Enhanced Trench MOSFETs N-Channel Trench MOSFETs SuperFET MOSFETs N-Channel Planar MOSFETs P-Channel MOSFETs Complimentary Pair Trench MOSFETs Planned AEC-Q100/AEC-Q101 Qualified Devices Planned FS Planar IGBTs Planned FS Trench IGBTs Planned Rectifiers Planned SuperFET Planned N-Channel Trench MOSFETs www.fairchildsemi.com 4 7 8 10 12 13 14 15 18 19 20 21

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Gate Driver IC
(AEC-Q100 Qualified)

FAN7171

FAN7171

FAN7171

FAN7171

GATE DRIVE ICs


Type Type Function Function Package Package
SO8

FAN7171_F085 600VHigh Current, High Side FAN7171_F085 600V High Current, High Side Gate Drive IC Side Gate Drive IC

SO8

Side

Gate Drive IC
(AEC-Q100 Qualified)

GATE DRIVE ICs


Type
FAN7190_F085

Function
600V High Current, High and Low Side Gate Drive IC

Package
SO8

Gate Drive ICs


(AEC-Q100 Qualified)
Up to 600V VCC

1 IN 2 3 SHUTDOWN /DEAD TIME 4

VCC IN SD/DT COM

VB HO VS LO

8 7 To Load 6 5

FAN7080MX_GF085 FAN7081MX_GF085 FAN7083MX_GF085

FAN7085MX_GF085

GATE DRIVE ICs Type Function


FAN7080_GF085 FAN7081_GF085 FAN7083_GF085 FAN7085_GF085 Half bridge driver with dead time control High side driver High side driver with shutdown function High side driver with built in recharge

Package
SO8 SO8 SO8 SO8

Low Side Gate Drivers


(AEC Q100 Qualified)
The Automotive High Voltage and Driver Product Line introduces a family of low side gate drivers providing fast switching and accurate timing to optimize high frequency power converter designs in automotive applications. The products meet the industrys highest reliability requirements and are qualified according to the AEC-Q100 standard.

PORTFOLIO SUMMARY
Part Number Topology
Low Side Dual 4A Low Side Dual 4A Low Side Dual 2A Low Side Dual 2A Low Side Dual 4A Low Side Dual 4A

APPLICATIONS
Input Threshold
TTL

Io+/Io(A)
4/3

Supply Voltage (V)


4.5 to 18

Features

Pkg
SOIC8 SOIC8 SOIC8 SOIC8 SOIC8 SOIC8

FAN3213T_F085

Dual Inverting Dual NonInverting Dual Inverting Dual NonInverting Dual Inverting with Dual Enable Dual NonInverting with Dual Enable Two Channels of Dual-Input/SingleOutput Dual Inverting + Dual Enable Dual NonInverting + Dual Enable Two Channels of Dual-Input/SingleOutput Two Channels of Dual-Input/SingleOutput Inverting + Enable Non-Inverting + Enable

Switch-Mode Power Supplies Line Drivers Digital Audio Amplifiers Synchronous Rectifier Circuits DCDC Power Converters Any switching power MOSFET or IGBT

FAN3214T_F085

TTL

4/3 2.4 / 1.6 2.4 / 1.6 4/3

4.5 to 18

BENEFITS AND FEATURES


Qualified to AEC Q100 Automotive Class 1 MillerDrive architecture for the output stage, a bipolarMOSFET combination that provides the highest current during the Miller plateau of the MOSFET switching transition to minimize switching losses Fail-Safe Inputs to hold the output low if an input signal is absent Under-Voltage Lockout for predictable startup Enable inputs which default to ON if not connected < 20 ns Propagation Delays for > 1 MHz Switching Industry-standard pin-outs Lead(Pb)-free finish

FAN3216T_F085

TTL

4.5 to 18

FAN3217T_F085 FAN3223T/C_F08 5 FAN3224T/C_F08 5

TTL TTL / CMOS TTL / CMOS

4.5 to 18

4.5 to 18

4/3

4.5 to 18

FAN3225T/C_F08 5 FAN3226T/C_F08 5 FAN3227T/C_F08 5

Low Side Dual 4A Low Side Dual 2A Low Side Dual 2A

TTL / CMOS TTL / CMOS TTL / CMOS

4/3

4.5 to 18

SOIC8 SOIC8 SOIC8

COMPETITION
Competito r Micrel, TI, National, IXYS Product Name and Desc. MIC4423, MIC4417, MIC4124, MIC4421, TPS28xx, UCC3732x, UCC2742x, LM51xx, IXDI402, IXDN504, IXDD509, MAX626, MAX5056, TC14xx, TC44xx, MCP14xx, MC33151, MC34152, IR4427, IR4428s, EL71xx, EL72xx Why we are better?

2 / 1.5

4.5 to 18

2 / 1.5

4.5 to 18

AEC Qualified Propagation delay MillerDrive architecture to minimize switching losses

FAN3228T/C_F08 5

Low Side Dual 2A

TTL / CMOS

2 / 1.5

4.5 to 18

SOIC8 Maxim, Microchip, ON, IR, Intersil Semtech

FAN3229T/C_F08 5 FAN3121T/C_F08 5 FAN3122T/C_F08 7 5

Low Side Dual 2A Low Side Single 9A Low Side Single 9A

TTL / CMOS TTL / CMOS TTL / CMOS

2 / 1.5

4.5 to 18

SOIC8 SOIC8 SOIC8

9.7 / 7.1 9.7 / 7.1

4.5 to 18

4.5 to 18

Smart Switch MOSFETs


(AEC-Q100/101 Qualified)

SMART HIGH SIDE SWITCH MOSFETs Type


FDBS09H04A_F085A FDDS10H04A_F085A FDDS100H06_F085

BVDss
38V 38V 55V

RDS(ON)
9mOhms 10mOhms 100mOhms

Package
TO263-7 TO252-5 TO252-5

Smart Switch Devices


(AEC-Q100/101 Qualified)

SMART HIGH CURRENT BRIDGE DRIVER Type


FAN7093_F085

BVDss
45V

RDS(ON)
30.5mOhms (150oC)

Package
T0263 7

Ignition IGBTs
(AEC-Q101 Qualified)
COLLECTOR

Current Sensing IGBT


Type
GATE

Clamping Voltage 400V

IC @110oC

Design Ratio 200:1

VCE(sat) @25oC SCIS Max Conditions Energy 1.6V 6A, 4V 300mJ

Package

FGB3040CS_F085

19A

TO263-6

EMITTER KELVIN SENSE EMITTER

Standard Ignition IGBT


Type Clamping Voltage 400V 400V 400V 360V 400V 400V 400V 360V 360V 360V 360V 360V 480V IC @110oC 10A 10A 10A 17A 17A 17A 17A 26A 26A 31A 31A 31A 43A VCE(sat) @25oC Max Conditions 1.45V 1.45V 1.45V 1.25V 1.25V 1.25V 1.25V 1.4V 1.4V 1.17V 1.17V 1.17V 1.25V 6A, 4V, 25oC 6A, 4V, 25oC 6A, 4V, 25oC 6A, 4V, 25oC 6A, 4V, 25oC 6A, 4V, 25oC 6A, 4V, 25oC 6A, 4V, 25oC 6A, 4V, 25oC 10A, 4V, 25oC 10A, 4V, 25oC 10A, 4V, 25oC 10A, 4V, 25oC SCIS Energy 200mJ 200mJ 250mJ 300mJ 300mJ 300mJ 300mJ 320mJ 320mJ 500mJ 500mJ 500mJ 500mJ Package

ISL9V2040S3ST_F085 ISL9V2040D3ST_F085 ISL9V2540S3ST_F085 ISL9V3036S3ST_F085 ISL9V3040P3_F085 ISL9V3040S3ST_F085 ISL9V3040D3ST_F085 FGB3236_F085 FGI3236_F085 ISL9V5036S3ST_F085 ISL9V5036S3_F085 ISL9V5036P3_F085 ISL9V5045S3ST_F085

TO263 TO252 TO263 TO263 TO220 TO263 TO252 TO263 TO262 TO263 TO262 TO220 TO263

Type FGD3040G2_F085 FGD3440G2_F085

Clamping IC @110oC Voltage 400V 20A 400V 22A

VCE(sat) @25oC Max Conditions 1.3V 6A, 4V 1.3V 6A, 4V

SCIS Energy 300mJ 340mJ

Package TO252 TO252

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IGBTs
(AEC-Q101 Qualified)

Type
FGD3N60LSDTM

VCES
600V

IC @25oC
6A

VCE(sat) Max @ 25oC


1.5V @ 3A

Package
TO252

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Rectifiers
(AEC-Q101 Qualified)

Type
Ultrafast Rectifiers
RURD620CCS9A_F085 FFB20UP20DN_F085 RURD4120S9A_F085

BVDss

IF

VF @ IF 25oC

Package

200V 200V 1200V

2x6A 1.0V 2x10A 1.15V 4A 2.1V

TO252 TO263 TO252

Hyperfast Rectifiers
RHRD660S9A_F085 RHRP860_F085 600V 600V 6A 8A 2.1V 2.1V TO252 TO220

Stealth II Rectifiers
FFD08S60S_F085 600V 8A 2.6V TO252

All of the above rectifiers are automotive qualified. Red denotes the linked datasheet. Note: if the entire FSID is not in red font, _F085 base part IMR does not yet exist and can be created upon request with approved business case.

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Integrated Injector Driver


NMOS with Gate Disable and Flyback Detection
(AEC-Q101 Qualified)

Type
FDSS2407_F085

BVDss
62V

Gate Drive
LL

RDS(ON)
2x132mOhms

Package
SO8 dual

RDS(ON) listed is rated max at 5V gate drive for logic level (LL) devices.

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Enhanced Trench MOSFETs


(AEC-Q101 Qualified) ESD Protected
Single N-Channel

Type
FDD8453LZ_F085 [1]

BVDss
40V

Gate Drive
LL

RDS(ON)
8.7mOhms

Package
TO252

Single P-Channel

Type
FDS6673BZ_F085 FDS4435BZ_F085

BVDss
-30V -30V

Gate Drive RDS(ON)


LL LL 12mOhms 35mOhms

Package
SO8 SO8

Configuration
P-ch (Trench) P-ch (Trench)

RDS(ON) listed is rated max at 10V gate drive for standard gate (SG) and 5V gate drive for logic level (LL) devices. [1] RDS(ON) specified for 4.5V gate drive.

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N-Channel Trench MOSFETs


(AEC-Q101 Qualified)

Type
FDS6898AZ_F085 FDG6301N_F085 FDB8132_F085 FDB8160_F085 FDB8832_F085 FDB8860_F085 FDD8870_F085 [1] FDB8870_F085 [1] FDP8870_F085 [1] FDB8896_F085 [1] FDD8896_F085 [1] FDS8984_F085 [1]

BVDss
20V 25V 30V 30V 30V 30V 30V 30V 30V 30V 30V 30V

Gate Drive RDS(ON)


LLL LLL SG SG LL LL LL LL LL LL LL LL 18mOhms 2x5 Ohms 1.6mOhms 1.8mOhms 2.1mOhms 2.6mOhms 4.4mOhms 4.4mOhms 4.4mOhms 6.5mOhms 6.8mOhms 2x30mOhms

Package
SO8 SC70-6 dual TO263 TO263 TO263 TO263 TO252 TO263 TO220 TO263 TO252 SO8

RDS(ON) listed is rated max at 10V gate drive for standard gate (SG) and 5V gate drive for logic level (LL) devices , 2.7V gate drive for low logic level (LLL) devices. [1] RDS(ON) specified for 4.5V gate drive.

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N-Channel Trench MOSFETs


(AEC-Q101 Qualified)

Type
FDD8444L_F085 FDD8447L_F085 [1] FDS8449_F085 [1] FDS8949_F085 [1] FDB9403_F085 FDB8441_F085 FDI8441_F085 FDB8442_F085 FDB8443_F085 FDP8443_F085 FDD8444_F085 FDP8442_F085 FDB8444_F085 FDD8445_F085 FDB8445_F085

BVDss
40V 40V 40V 40V 40V 40V 40V 40V 40V 40V 40V 40V 40V 40V 40V

Gate Drive RDS(ON)


LL LL LL LL SG SG SG SG SG SG SG SG SG SG SG 6.0mOhms 11mOhms 34mOhms 2x36mOhms 1.2mOhms 2.5mOhms 2.7mOhms 2.9mOhms 3.0mOhms 3.5mOhms 5.2mOhms 5.3mOhms 5.5mOhms 8.7mOhms 9.0mOhms

Package
TO252 TO252 SO8 SO8 dual TO263 (NEW) TO263 TO262 TO263 TO263 TO220 TO252 TO220 TO263 TO252 TO263

RDS(ON) listed is rated max at 10V gate drive for standard gate (SG) and 5V gate drive for logic level (LL) devices , 2.7V gate drive for low logic level (LLL) devices. [1] RDS(ON) specified for 4.5V gate drive.

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N-Channel Trench MOSFETs


(AEC-Q101 Qualified)
Type
FDB035AN06A0_F085 FDB070AN06A0_F085 FDD10AN06A0_F085 FDD13AN06A0_F085 FDD20AN06A0_F085 FDD26AN06A0_F085 FDB14AN06LA0_F085 FDD14AN06LA0_F085 FDD24AN06LA0_F085 FDD5810_F085 FDN5632N_F085 FDB045AN08A0_F085 FDD16AN08A0_F085 FDB3632_F085 FDB3652_F085 FDB3672_F085 FDD3672_F085 FDD3682_F085 FDB2532_F085 FDB2552_F085 FDD2572_F085 FDS2672_F085 FDP2710_F085 FQI27N25TU_F085

BVDss
60V 60V 60V 60V 60V 60V 60V 60V 60V 60V 60V 75V 75V 100V 100V 100V 100V 100V 150V 150V 150V 200V 250V 250V

Gate Drive
SG SG SG SG SG SG LL LL LL LL LL SG SG SG SG SG SG SG SG SG SG SG HSG HSG

RDS(ON)
3.2mOhms 7mOhms 10.5mOhms 13.5mOhms 20mOhms 26mOhms 14mOhms 16mOhms 24mOhms 27mOhms 98mOhms 4.5mOhms 16mOhms 7.5mOhms 16mOhms 28mOhms 28mOhms 36mOhms 16mOhms 32mOhms 54mOhms 70mOhm 47mOhms 110mOhms

Package
TO263 (NEW) TO263 (NEW) TO252 (NEW) TO252 TO252 TO252 TO263 TO252 TO252 TO252 SOT-3 (NEW) TO263 TO252 TO263 TO263 TO263 TO252 TO252 TO263 TO263 (NEW) TO252 SO8 TO220 TO262

RDS(ON) listed is rated max at 10V gate drive for standard gate (SG) and 5V gate drive for logic level (LL) devices.

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SuperFET MOSFETs
(AEC-Q101 Qualified)

FAST BODY DIODE Type FCB20N60F_F085 BVDss 600V Gate Drive SG RDS(ON) 190 mOhms Package TO263 (NEW)

RDS(ON) listed is rated max at 10V gate drive for standard gate (SG) and 5V gate drive for logic level (LL) devices.

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N-Channel Planar MOSFETs


(AEC-Q101 Qualified)
Type
FDH5500_F085 FDP5500_F085 HUFA75344S3_F085A HUFA75321D3ST_F085A HUF76633P3_F085 HUFA76429D3ST_F085 HUFA76419D3ST_F085A HUFA76409D3ST_F085A HUFA75639S3ST_F085A HUFA76645S3ST_F085 HUF76639S3ST_F085 HUFA75852G3_F085 FQD12N20LTM_F085 FQD9N25TM_F085 FQB25N33TM_F085 FDD6N50TM_F085

BVDss
55V 55V 55V 55V 55V 60V 60V 60V 100V 100V 100V 150V 200V 250V 330V 500V

Gate Drive RDS(ON)


SG SG SG SG LL LL LL LL SG LL LL SG LL SG HSG HSG 7mOhms 7mOhms 8mOhms 36mOhms 0.035Ohms 25mOhms 43mOhms 71mOhms 25mOhms 15mOhms 26mOhms 16mOhms 320mOhms 0.42Ohms 230mOhms 900mOhms

Package
TO247 TO220 TO262 TO252 TO220 TO252 TO252 TO252 TO263 (NEW) TO263 TO263 (NEW) TO247 TO252 TO252 TO263 TO252

RDS(ON) listed is rated max at 10V gate drive for standard gate (SG), high standard gate (HSG), and 5V gate drive for logic level (LL) devices. Note: if the entire FSID is not in red font, _F085/F085A base part IMR does not yet exist and can be created upon request with approved business case.

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P-Channel MOSFETs
(AEC-Q101 Qualified)

Type
FDS4465_F085 FDC642P_F085 FDS9431A_F085 FDD6637_F085 FDS4675_F085 FDD4141_F085 FDS4141_F085 FDD4685_F085 FDD4243_F085 FDS9958_F085 FQB34P10TM_F085 FQB22P10TM_F085 FQD12P10TM_F085 FQD8P10TM_F085 FQB7P20TM_F085 FQD3P50TM_F085

BVDss
-20V -20V -20V -35V -40V -40V -40V -40V -40V -60V -100V -100V -100V -100V -200V -500V

Gate Drive RDS(ON)


LLL LLL LLL LL LL LL LL LL LL LL SG SG SG SG HSG HSG 14mOhms 100mOhms 180mOhms 18mOhms 17mOhms 18mOhms 19mOhms 35mOhms 64mOhms

Package Technology
S08 SSOT6 S08 TO252 S08 TO252 S08 TO252 TO252 Trench Trench Trench Trench Trench Trench Trench Trench Trench Trench Planar Planar Planar Planar Planar Planar

2x135mOhms S08 Dual 60mOhms 125mOhms 290mOhms 530mOhms 690mOhms 4.9 Ohms TO263 TO263 TO252 TO252 TO263 TO252

RDS(ON) is rated max at -4.5V gate drive for logic level (LL) and -1.8V gate drive for low logic level (LLL) devices. RDS(ON) listed is rated max at -10V gate drive for standard gate (SG) and high standard gate (HSG)

20

Complimentary Pair Trench MOSFETs


(AEC-Q101 Qualified)

Type
FDG6332C_F085

BVDss
20V -20V 30V -30V 40V -40V 60V -60V

Gate Drive RDS(ON)


LLL LLL LL LL LL LL LL LL 400mOhms 630mOhms 40mOhms 80mOhms 30mOhms 70mOhms 75mOhms 135mOhms

Package
SC70-6

FDS8958A_F085

SO8

FDD8424H_F085A

TO252-5

FDS4559_F085

SO8

RDS(ON) listed is rated max at +/- 4.5V gate drive for logic level (LL) and +/-2.5V gate drive for low logic level (LLL) devices. Note: if the entire FSID is not in red font, _F085/F085A base part IMR does not yet exist and can be created upon request with approved business case.

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Planned Application Specific Devices

22

Planned FS Planar IGBTs


(Will be AEC-Q101 Qualified)

Type
FGB20N60SFD_F085 FGH40N60SMD_F085 FGH60N60SMD_F085

VCES IC @25oC
600V 600V 600V 40A 80A 120A

VCE(sat) Package Samples oC Typ. @ 25


2.2V @ 20A 1.9V @ 40A 1.9V @ 60A TO263 TO247 TO247 Q412 Q412 Q412

Release
Q113 Q113 Q113

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Planned FS Trench IGBTs


(Will be AEC-Q101 Qualified)

Type
FGH75N65UPD_F085

VCES IC @25oC
650V 150A

VCE(sat) Package Samples oC Typ. @ 25


1.65V @ 20A TO247 Q412

Release
Q113

24

Planned Rectifiers
(Will be AEC-Q101 Qualified)

STEALTH RECTIFIERS
Type
ISL9K1560G3_F085 ISL9K3060G3_F085 ISL9R1560G2_F085 ISL9R3060G2_F085

BVDss
600V 600V 600V 600V

IF
30A 60A 15A 30A

VF @ IF 25oC
1.8V 2.1V 1.8V 2.1V

Package
TO247 TO247 TO247 TO247

Samples
Q412 Q412 Q412 Q412

Release
Q113 Q113 Q113 Q113

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Planned SuperFET
(Will Be AEC-Q101 Qualified)

STANDARD BODY DIODE


Type
FCH47N60_F085 FCB20N60_F085 FCP20N60_F085

BVDss
600V 600V 600V

Gate Drive
SG SG SG

RDS(ON)
70 mOhms 190 mOhms 190 mOhms

Package
TO247 TO263 TO220

Samples
Now! Now! Now!

Release
Q113 Q113 Q113

FAST BODY DIODE


FCH47N60F_F085 FCP20N60F_F085 600V 600V SG SG 73 mOhms 190 mOhms TO247 TO220 Now! Now! Q113 Q113

RDS(ON) listed is rated max at 10V gate drive for standard gate (SG) and 5V gate drive for logic level (LL) devices , 2.7V gate drive for low logic level (LLL) devices.

26

Planned N-Channel Trench MOSFETs


(Will Be AEC-Q101 Qualified)
Type FDBL9401_F085 FDBL9406_F085 FDB9406_F085 FDD9407_F085 FDI9406_F085 FDD9409_F085 FDD9410_F085 FDD9411_F085 FDMS53361L_F085 FDMS53362L_F085 FDB86363_F085 FDMS36101L_F085 FDB075N15A_F085 BVDss Gate Drive 40V 40V 40V 40V 40V 40V 40V 40V 60V 60V 80V 100V 150V SG SG SG SG SG SG SG SG LL LL SG LL SG RDS(ON) 0.7 mOhms 1.5 mOhms 1.8 2.0 2.2 3.2 4.1 7.9 mOhms mOhms mOhms mOhms mOhms mOhms Package TO-Leadless TO-Leadless TO263 TO252 TO262 TO252 TO252 TO252 Power56 Power56 TO263 Power56 TO263 Samples Available* Available* Available Available Available Q1'13 Q1'13 Q1'13 Available Available Available Available Available Release Q4'13 Q4'13 (NEW) Q1'13 Q1'13 Q1'13 Q2'13 Q2'13 Q2'13 (NEW) Q213 Q213 (NEW) Q3'13 (NEW) Q213 (NEW) Q2'13

20 mOhms 40 mOhms 2.5 mOhms 28 mOhms 7.5 mOhms

* For TO-LeadLess : functional samples only. RDS(ON) listed is rated max at 10V gate drive for standard gate (SG) and 5V gate drive for logic level (LL) devices , 2.7V gate drive for low logic level (LLL) devices.

27

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