Tutorial 2: Power Semiconductor Switches 1.

Describe three (3) types of power switches and give an example of semiconductor device fall under each category. 2. State three (3) effect of reverse recovery on diode 3. State the difference between current driven device and voltage driven device. Give an example of semiconductor devices for each type of devices. 4. The reverse recovery time of a diode is t rr 3s , and the rate of fall of the diode current is di / dt 30 A / s . Determine, a)the storage charge QRR , b)the peak reverse current I RR . 5. State 2 advantages and 2 disadvantage of MOSFET. 6. Forward conductor loss and switching loss are two types of losses that occur in real power switches but not in ideal power switch. Explain why these conditions happen. 7. The maximum junction temperature of a transistor is 150oC and the ambient temperate is 25oC. If the thermal resistance from junction to case is 0.4oC/W, thermal resistance from case to sink is 0.1oC/W and thermal resistance from sink to ambient is 0.5oC/W, Determine: a) Maximum power dissipation b) Case temperature c) Sink temperature 8. A MOSFET absorbs a thermal power of 17+10-3fs W, where fs is the switching frequency. The thermal resistances are 50C/W from the junction to the case, 90C/W for the case to the heat sink, and 2.50C/W for the heat sink to ambient. Assume ambient temperature is 400C and maximum junction temperature is 1750C. Determine the largest switching frequency that can be operated without a heat sink. 9. A MOSFET with no heat sink absorbs a thermal power of 2.0W. The thermal resistance from junction to ambient is 400C/W, if the ambient temperature is 300C. Determine the junction temperature and if the maximum junction temperature is 1500C, how much power can be absorbed without requiring a heat sink.