(Inc orpora ted in Bermud a with limited liab ility)

SPECIFICATIONS
8550
TYPE OF SWITCH MODEL NO
CONSTRUCTION

SHAPE AND DIMENSIONS SUBJECT TO ATTACHED CHART REGULATION

APPEARANCE EVRY PART SHOULD BE FINISHED NOT TO EXIST RUST

FLAW CRACK AND BAD PLATIONG
Package TO-92 TYP PNP

ELECTRICAL CHARACTERISTICS TESTCONDITION

1 ABSOLUTE MAXIMUM RATINGS(T

Collector-Base Voltage V -40 V

Collector-Emitter Voltage VCEO -25 V
Emitter-Base Voltage VEBO -6.0 V
Collector Current IC -1.5 A
Base Current IB -0.5 A
Collector Dissipation PC -1.0 W
Junction Temperature Tj 150
Storage Temperature Tstg -65~+150
2:ELECTRICAL CHARACTERISTICS (Ta=
Characteristic Min Typ Max Unit Test Conditions
Collector- Base Breakdown Voltage BVCBO -40 - - V IC=-100uA IE=0
Collector-Emitter Breakdown Voltage BVCEO -25 - - V IC=-2mA IB=0
Emitter-Base Breakdown Voltage BVEBO -6.0 - - V IE=-0.1mA IC=0
Collector Cutoff Current ICBO - - -100 nA VCB=-35V, IE=0
Emitter Cutoff Current IEBO - - -100 nA VEB=-6V, IC=0
DC Current Gain hFE1 45 - VCE=-1.0V, IC=-5.0mA
HFE2 85 300 VCE=-1.0V IC=-100mA
HFE3 40 VCE=-1.0V IC=-800mA
Collector-Emitter Saturation Voltage VCE(sat) - -0.28 -0.5 V IC=-800mA,IB=-80mA
Base-Emitter Saturation Voltage VBE(sat) - -0.98 -1.2 V IC=-800mA,IB=-80mA
Base-Emitter On Voltage VBE -0.66 -1.0 V VCE=-1.0V, IC=-10mA
fT 100 200 MHz VCE=-10V, IC=-50mA
Cob 15 pF VCB=-10V, IE=0 1MHz
3:Classification on HFE1
RANK B C D
RANGE 85-160 120-200 160-300