1

Small Signal Model

MOS Field-Effect Transistors
(MOSFETs)
Quiz No 3 DE 27 (CE)
(a) Draw small signal model (4)
(b) Find expression for R
out
(2)
(c) Prove v
o
/v
sig
= (
1

2
R
C
)/(R
sig
+r

) (4).
R
out
.
20-03-07
Figure 4.2 The enhancement-type NMOS transistor with a positive voltage applied to the gate. An n channel is induced at
the top of the substrate beneath the gate.
Enhancement-type NMOS transistor:
MOSFET Analysis
i
D
= i
S
, i
G
= 0
Large-signal equivalent-circuit model of an n-channel
MOSFET : Operating in the saturation region.
Large-signal equivalent-circuit model of an p-channel
MOSFET : Operating in the saturation region.
Large Signal Model : MOSFET
Transfer characteristic of an amplifier
Conceptual circuit utilized to study the operation of the
MOSFET as a small-signal amplifier.
The DC BIAS POINT
To Ensure Saturation-region Operation
Signal Current in Drain Terminal
Total instantaneous voltages v
GS
and v
D

Small-signal models for the MOSFET
Common Source amplifier circuit
Example 4-10
Small Signal T Model : NMOSFET
Small Signal Models
T Model
Single Stage MOS Amplifier
Amplifiers Configurations
Common Source Amplifier (CS) :Configuration
Common Source Amplifier (CS)
Most widely used

Signal ground or an ac earth is at the source
through a bypass capacitor

Not to disturb dc bias current & voltages
coupling capacitors are used to pass the
signal voltages to the input terminal of the
amplifier or to the Load Resistance

CS circuit is unilateral
R
in
does not depend on R
L
and vice versa
Small Signal Hybrid Model
(CS)
Small Signal Hybrid Model : (CS)
G in
R R =
sig
sig G
G
gs
v
R R
R
v
+
=
( )
L D o gs m o
R R r v g v || || =
( )
|
|
.
|

\
|
+
= =
sig G
G
L D o m
gs
o
v
R R
R
R R r g
v
v
G || ||
D o o
R r || R =
sig
gs
gs
o
sig
o
v
v
v
v
v
v
v
G = =
Small-signal analysis performed directly on the amplifier
circuit with the MOSFET model implicitly utilized.
G in
R R =
( )
|
|
.
|

\
|
+
=
sig G
G
L D o m
gs
o
R R
R
R R r g
v
v
|| ||
D o o
R r || R =
Input Resistance is infinite (R
i
=)

Output Resistance = R
D

Voltage Gain is substantial
Common Source Amplifier (CS)
Summary
G in
R R =
( )
|
|
.
|

\
|
+
=
sig G
G
L D o m
gs
o
R R
R
R R r g
v
v
|| ||
D o o
R r || R =
Common-source amplifier
with a resistance R
S
in the source lead
The Common Source Amplifier
with a Source Resistance
The T Model is preferred, whenever a
resistance is connected to the source terminal.



r
o
(output resistance due to Early Effect) is not included, as it
would make the amplifier non unilateral & effect
of using r
o
in model would be studied in Chapter
6

Small-signal equivalent circuit with r
o
neglected.
S
m
g
R
g
v
i
+
=
1
D o
G in
R R
R R
=
=
Small-signal Analysis.
sig
i
i
gs
gs
o
sig
o
v
v
v
v
v
v
v
v
v
G = =
( )
( )
|
|
.
|

\
|
+
|
|
.
|

\
|
+
= =
+
=
+
=
+
=
=
S m
L D m
sig G
G
v
sig
o
sig
sig G
G
i
S m
i
i
S
m
m
gs
L D gs m o
R g
R R g
R R
R
G
v
v
v
R R
R
v
R g
v
v
R
g
g
v
R R v g v
1
||
1
1
1
||
Voltage Gain : CS with R
S
Common Source Configuration with R
s
R
s
causes a negative feedback thus
improving the stability of drain current of
the circuit but at the cost of voltage gain

R
s
reduces i
d
by the factor
(1+g
m
R
s
) = Amount of feedback

R
s
is called Source degeneration
resistance as it reduces the gain

Small-signal equivalent circuit directly on Circuit
A common-gate amplifier based on the circuit
Common Gate (CG) Amplifier
The input signal is applied to the source

Output is taken from the drain

The gate is formed as a common input &
output port.

T Model is more Convenient

r
o
is neglected
A small-signal equivalent circuit
A small-signal Analusis : CG
m i m
i
i
i
in
g v g
v
i
v
R
1
= = =
D out
R R =
A small-signal Analusis : CG
( )
( )
sig m
L D m
sig
o
v
sig m
sig
sig
sig
m
m
sig
sig in
in
i
L D i m o
sig
i
i
o
sig
o
v
R g
R R g
v
v
G
R g
v
v
R
g
g
v
R R
R
v
R R v g v
v
v
v
v
v
v
G
+
= =
+
=
+
=
+
=
=
= =
1
||
1
1
1
||
Small signal analysis directly on circuit
The common-gate amplifier fed with a current-signal input.
Summary : CG
4. CG has much higher output Resistance
5. CG is unity current Gain amplifier or a Current Buffer
6. CG has superior High Frequency Response.
A common-drain or source-follower amplifier.
Small-signal equivalent-circuit model
Small-signal Analysis : CD
(a) A common-drain or source-follower amplifier
:output resistance R
out
of the source follower.
m m
o out
g g
r R
1 1
|| ~
|
|
.
|

\
|
=
(a) A common-drain or source-follower amplifier. : Small-
signal analysis performed directly on the circuit.
Common Source Circuit (CS)
Common Source Circuit (CS) With R
S
Common Gate Circuit (CG)
Current Follower

Common Drain Circuit (CD)
Source Follower

Summary & Comparison
Quiz No 4
Draw/Write the Following:

27-03-07
BJT MOSFET
Types npn pnp nMOS pMOS
Symbols
Model
T Model
g
m
R
e
/r
s
r

/r
g
Problem 5-44
SOLUTION : DC Analysis
SOLUTION : DC Analysis
I
E
Check for Active Mode

mA I
I
I
I I
E
E
E
B E
1
101
100
3 . 3
7 . 0 5
0 100
) 1 (
7 . 0 3 . 3 5
0 100 7 . 0 3 . 3 5
=
+

=
=
+

=
|
O = = = 25
0 . 1
25
E
t
e
I
V
r
I
B
Solution Small Signal Analysis
Solution Small Signal Analysis
Solution Small Signal Analysis : Input Resistance
R
in
i
b

{ }
L C e
e
b
b
b
in
R R r
i
v
i
v
R || ) 1 (
) 1 (
+ + =
+
= = |
|
+
v
b
-
Solution Small Signal Analysis : Output Resistance
I
test
I
E
I
E
/(1+)
I
RC
R
out
test
test
out
I
V
R =
(

+
+ =
+
+ +
+
+
=
+
+
+
=
) 1 (
||
) 1 (
) 1 (
) 1 (
|
|
|
|
sig
e C
sig
e C
sig
e C
sig
e
test
C
test
test
out
R
r R
R
r R
R
r R
R
r
V
R
V
V
R
E R test
I I I
C
+ =
) 1 ( | +
+
=
sig
e
test
E
R
r
V
I
C
test
R
R
V
I
C
=
Solution Small Signal Analysis : Voltage Gain
+
-
( )
L C m
eb
o
R R g
v
v
|| =
+
-
v
i
+
-
v
eb
sig
i
i
eb
eb
o
sig
o
v
v
v
v
v
v
v
v
=
Vo
Solution Small Signal Analysis : Voltage gain
sig
i
i
eb
eb
o
sig
o
v
v
v
v
v
v
v
v
=
( )
L C m
eb
o
R R g
v
v
|| =
+
-
v
i
+
-
v
eb
( )
L C e
e
i
eb
R R r
r
v
v
|| +
=
Solution Small Signal Analysis : Voltage Gain
sig
i
i
eb
eb
o
sig
o
v
v
v
v
v
v
v
v
=
( )
L C m
eb
o
R R g
v
v
|| =
+
-
v
i ( )
L C e
e
i
eb
R R r
r
v
v
|| +
=
{ }
L C e in
R R r R || ) 1 ( + + = |
{ }
{ }
sig L C e
L C e
sig in
in
sig
i
R R R r
R R r
R R
R
v
v
+ + +
+ +
=
+
=
|| ) 1 (
|| ) 1 (

|
|
Solution Small Signal Analysis : Voltage Gain
sig
i
i
eb
eb
o
sig
o
v
v
v
v
v
v
v
v
= ( )
L C m
eb
o
R R g
v
v
|| =
( )
L C e
e
i
eb
R R r
r
v
v
|| +
=
sig in
in
L C e
e
L C m
sig
o
R R
R
) R (R r
r
) ||R (R g
v
v
+

+
=
||
sig in
in
sig
i
R R
R
v
v
+
=
sig in
in
L C e
L C
sig
o
R R
R
) R (R r
) ||R (R
v
v
+

+
=
||
o
sig in
in
L C e
L C
e m
sig
o
R R
R
) R (R r
) ||R (R
r g
v
v
+

+
=
||
Solution Small Signal Analysis : Voltage Gain
+
-
( )
( )
L C e
L C
i
o
R R r
R R
v
v
||
||
+
=
+
-
v
i
sig
i
i
o
sig
o
v
v
v
v
v
v
=
sig in
in
sig
i
R R
R
v
v
+
=
sig in
in
L C e
L C
sig
o
R R
R
) R (R r
) ||R (R
v
v
+

+
=
||
Vo
Problem
Small Signal Model MOSFET : CD
Solution Small Signal Analysis
1/g
m
g
m
v
sg
D
1/g
m
g
m
v
sg
D
Solution Small Signal Analysis : Input Resistance
R
in
I
g
=0
=
in
R
1/g
m
g
m
v
sg
D
Solution Small Signal Analysis : Output Resistance
I
test
I
D
I
G
=0
I
RD
R
out
test
test
out
I
V
R =
m
D
m
test
D
test
test
out
g
R
g
V
R
V
V
R
1
||
/ 1
=
+
=
D R test
I I I
C
+ =
m
test
D
g
V
I
1
=
D
test
R
R
V
I
D
=
V
test
1/g
m
g
m
v
sg
D
Solution Small Signal Analysis : Voltage Gain
+
-
( )
L D m
sg
o
R R g
v
v
|| =
+
-
v
i
+
-
v
sg
sig
i
i
sg
sg
o
sig
o
v
v
v
v
v
v
v
v
=
1/g
m
g
m
v
sg
D
Solution Small Signal Analysis : Voltage gain
+
-
v
i
+
-
v
sg
( )
L D
m
m
i
sg
R R
g
g
v
v
||
1
1
+
=
( )
L D m
sg
o
R R g
v
v
|| =
sig
i
i
sg
sg
o
sig
o
v
v
v
v
v
v
v
v
=
Solution Small Signal Analysis : Voltage Gain
+
-
v
i
=
in
R
sig i
v v =
( )
L D m
sg
o
R R g
v
v
|| =
sig
i
i
sg
sg
o
sig
o
v
v
v
v
v
v
v
v
=
( )
L D
m
m
i
sg
R R
g
g
v
v
||
1
1
+
=
Solution Small Signal Analysis : Voltage Gain
) R (R
g
g
) ||R (R g
v
v
L D
m
m
L D m
sig
o
||
1
1

+

=
sig i
v v =
( )
L D m
sg
o
R R g
v
v
|| =
sig
i
i
sg
sg
o
sig
o
v
v
v
v
v
v
v
v
=
( )
L D
m
m
i
sg
R R
g
g
v
v
||
1
1
+
=
) R (R
g
) ||R (R
v
v
L D
m
L D
sig
o
||
1
+
=
Solution Small Signal Analysis : Voltage Gain
+
-
( )
( )
L C
m
L D
i
o
R R
g
R R
v
v
||
1
||
+
=
+
-
v
i
sig
i
i
o
sig
o
v
v
v
v
v
v
=
sig i
v v =
( )
( )
L C
m
L D
sig
o
R R
g
R R
v
v
||
1
||
+
=
Solution Small Signal Analysis
{ }
L C e in
R R r R || ) 1 ( + + = |
(

+
+ =
) 1 (
||
|
sig
e C out
R
r R R
sig in
in
L C e
L C
sig
o
R R
R
) R (R r
) ||R (R
v
v
+

+
=
||
1 =
=
o
|
=
in
R
m
D out
g
R R
1
|| =
( )
( )
L C
m
L D
sig
o
R R
g
R R
v
v
||
1
||
+
=
Problem 6-127(e)
DC Analysis 6-127(e)
mA I
A I
mA I
C
B
E
5 . 0
0 5 101 / 5 . 0
5 . 0
100
1
1
1
=
~ = ~
=
=

|
mA I
A I
mA I
C
B
E
5 . 0
0 5 101 / 5 . 0
5 . 0
100
2
2
2
~
~ = ~
~
=

|
e Active in Q
V V V V V
V V
B C
C
mod
6 . 4 4 . 0 5 4 . 0
5 10 5 . 0 10
2
2 2
2
= = <
= =
e Active in Q
V V V V
V V
B C
C
mod
4 . 0 4 . 0 ) 10 ( 5 10 4 . 0
3 . 4 7 . 0 5
1
3
1 1
1
~ = >
= =

Small Signal Model

Small Signal Model
Small Signal Model
R
in
1 t
r R
in
=
R
out
0 = : =
sig C out
V R R
sig sig
be
R r
r
v
v
+
=
1
1 1
t
t
sig
be
be
eb
eb
o
sig
o
v
v
v
v
v
v
v
v
1
1
2
2
=
2 1
1
2
e m
be
eb
r g
v
v
=
C m
eb
o
R g
v
v
2
2
=
1 1
2 1 1 2 1 2
t t
t
o |
r R
R
r R
r r g R g
v
v
sig
C
sig
e m C m
sig
o
+

=
+

=
Problem6-127(f)
Replacing BJT with MOSFET
Small Signal Model
Small Signal Model
Small Signal Model
R
in
=
in
R
R
out
0 = : =
sig D out
V R R
sig sg
v v =
1
sig
gs
gs
sg
sg
o
sig
o
v
v
v
v
v
v
v
v
1
1
2
2
=
2
1
1
2
m
m
gs
sg
g
g
v
v
=
D m
sg
o
R g
v
v
2
2
=
D m
m
m D m
sig
o
R g
g
g R g
v
v
1
2
1 2
=

=
1 t
r R
in
=
C out
R R =
1
2 1
t
o |
r R
R
v
v
sig
C
sig
o
+

=
1 =
=
o
|
=
in
R
D out
R R =
D m
sig
o
R g
v
v
1
=
1 1
2
1
m
sig
C
sig
o
g
R
R
v
v
+

=
|
o
Problem 6-127(f)
Solution P6-127(f)
+
+
-
-
v
be2
v
eb1
+
+
-
-
v
be2
v
eb1
+
v
i
-
Solution P6-127(f)
) )( 1 (
2 1 1
1
1
e e
b
b
in
r r
i
v
R + + = = |
L out
R R =
sig
i
i
be
be
O
sig
O
v
v
v
v
v
v
v
v
=
2
2
L m
be
O
R g
v
v
=
2
| |
sig e
L
sig e e
L e m
sig e e e e
e e e L m
sig
o
R r
R
R r r
R r g
R r r r r
r r r R g
v
v
+ +
+
=
+ + +
+
=
+ + + +
+ +
=
) 2 )( 1 (
) 1 (
) )( 1 (
) 1 (
) )( 1 (
) )( 1 (
1
2 1
2 1 1
1 2 2
2 1 1 2 1
2 1 1 2 2
|
o |
|
|
|
|
2 1
2 2
e e
e
i
be
r r
r
v
v
+

=
sig e e
e e
sig in
in
sig
i
R r r
r r
R R
R
v
v
+ + +
+ +
=
+
=
) )( 1 (
) )( 1 (
2 1 1
2 1 1
|
|
Problem 6-127(f) with MOSFET
-
-
v
gs2
v
sg1
+
+
Solution P6-127(f)
-
-
v
gs2
v
sg1
+
+
Solution P6-127(f)
+
v
i
-
= =
1 g
i
in
i
v
R
L out
R R =
sig
i
i
gs
gs
O
sig
O
v
v
v
v
v
v
v
v
=
2
2
L m
gs
O
R g
v
v
=
2
2
2 1
1 2 L m
m m
L m m
sig
o
R g
g g
R g g
v
v
=
+
=
2 1
1
2 1
2
2
1 1
1
m m
m
m m
m
i
gs
g g
g
g g
g
v
v
+

=
+

=
sig i
v v =
i
g1
=0
Comparison BJT/MOSFET Cct
=
in
R
L out
R R =
2
L m
sig
o
R g
v
v
=
) )( 1 (
2 1 1 e e in
r r R + + = |
L out
R R =
sig e
L
sig
o
R r
R
v
v
+ +
+
=
) 2 )( 1 (
) 1 (
1
2 1
|
o |
1 =
=
o
|
Small Signal Model
Figure P6.123
Problem 6-123
V
BE
=0.7 V
=200
K
n
(W/L)=2mA/V
2
V
t
=1V
Figure P6.123
DC Analysis
DC Analysis
V
BE
=0.7 V
=200
K
n
(W/L)=2mA/V
2
V
t1
=1V
V
t2
=25mV
0.7V
I=0.7/6.8=0.1mA
0 , 1 .
2 1 1
~ = =
B S D
I mA o I I
| | V V V
GS GS
316 . 1 1 2
2
1
1 . 0
2
= =
| |
2
1
'
2
1
t GS n D
V V
L
W
K I
|
.
|

\
|
=
I
G
=0
2V
V V V V
BE GS C
2
2
= + =
1mA
mA I I
C
1
3
2 5
2
=

= =
V mA
V
I
g
VOV
D
m
/ 63 . 0
2
1
1
= =
O = = = = k
g
r V mA
V
I
g
m t
C
m
5 , / 40
2
2
2
2
|
t
Small Signal Model
Small Signal Model
Small Signal Model : Voltage Gain
i
g
=0
+
v
i
-
+
v
be2
-
1
2
2 gs
i
i
be
be
o
sig
o
v
v
v
v
v
v
v
v
=
O =
= =
M R of eff ect g Negelectin
R R g
v
v
G
C L m
be
o
10
-30V/V ) || (
2
2
V V
r R
g
r R
v
v
S
m
S
i
be
/ 64 . 0
) || (
1
) || (
2 1
1
2 1 2
=
+
=
t
t
V V
R R
R
v
v
sig in
in
sig
i
/ 83 . 0 =
+
=
V V
g R R
R
r R
g
r R
R R g
v
v
si in
n
i
S
m
S
C L m
sig
/ 16
) || (
1
) || (
) || (
2 1
1
2 1
2
0
=
+

+
=
t
t
Small Signal Model : Input Resistance
i
g
=0
R
in
+
v
i
-
i
i
( )
O =

= = k
v
v
R
R v v
v
i
v
R
i
o
G
G o i
i
i
i
in
495
1
/
V V
r R
g
r R
R R g
v
v
S
m
S
C L m
i
/ 2 . 19
) || (
1
) || (
) || (
2 1
1
2 1
2
0
=
+
=
t
t