Semiconductor device fabrication is the process used to create

the integrated circuits that are present in

everyday electrical and electronic devices. It is a multiple-step sequence of
photolithographic and chemical processing steps during which electronic
circuits are gradually created on a wafer made of
pure semiconducting material. Silicon is almost always used, but
various compound semiconductors are used for specialized applications
Steps to Obtaining Semiconductor Grade Silicon (SGS)
Step Description of Process Reaction
1
Produce metallurgical grade
silicon (MGS) by heating
silica with carbon
SiC (s) + SiO
2
(s) Si (l) + SiO(g) + CO (g)
2
Purify MG silicon through a
chemical reaction to produce
a silicon-bearing gas of
trichlorosilane (SiHCl
3
)
Si (s) + 3HCl (g) SiHCl
3
(g) + H
2
(g) + heat
3
SiHCl
3
and hydrogen react in
a process called Siemens to
obtain pure semiconductor-
grade silicon (SGS)
2SiHCl
3
(g) + 2H
2
(g) 2Si (s) + 6HCl (g)
3
Once mounted, the ingot is typically sliced into individual wafers
with an inner diameter (ID) saw.
With an ID saw, the ingot is run along the inner diameter of a
circular diamond covered blade.
Internal diameter
wafer saw
6
(a finished crystal) A polished wafer

Lithography is typically the transfer of a pattern to a
photosensitive material by selective exposure to a
radiation source such as light

As in printing, lithography transfers a pre-made pattern to the
substrate.

It requires: 1) a pre-made pattern [ known as Mask]
2) a tool to transfer
[ light (Photo-lithography) or electrons (e-beam
lithography].





10
Detailed process sequence

1. Grow epi layer
Ultra-pure single-
crystal silicon


2. Implant n-well
Detailed process sequence (cont)

3. Define active area


4. Grow field oxide
For isolation
Detailed process sequence (cont)



5. Grow gate oxide


6. Pattern polysilicon
Detailed process sequence (cont)

7. Form pFETs


8. Form nFETs
Detailed process sequence (cont)
Metallization is a process that
forms contact on devices and
connects individual devices
together by thin conductive
metal films to form circuits.