ECEN4827/5827

0.35u CMOS
Approximate model parameters for hand
calculations
8/22/2008
Spice model library: 5827_035.lib
NMOS transistor
B (p substrate) must be tied to most negative
supply rail
NMOS
PMOS
RPN
RPP
WDIODE
PMOS transistor
B is n-well, usually most positive supply rail
Rsheet = 1.2 k/square, TC = 400 ppm/
o
C
square = L/W
Rsheet = 50 /square, TC = +830 ppm/
o
C
square = L/W
Unit-area (5*5) p+ diffusion to n-well diode
n = area multiple. Cathode must be tied to the
most negative supply rail
nmos_035.asy
pmos_035.asy
rpn_035.asy
rpp_035.asy
wdiode.asy
Approximate models for hand calculations
V
tn
0.48 V

n
C
ox
90 A/V
2

n
0.035 1/V (L=1)
0.025 1/V (L=2)
<0.015 1/V (L>4)
V
tp
0.62 V

p
C
ox
36 A/V
2

p
0.046 1/V (L=1)
0.019 1/V (L=2)
<0.01 1/V (L>4)
Beware: do not expect very accurate results using hand
calculations, especially for short channel lengths (L < 2 )
NMOS
PMOS
nmos_035.asy
pmos_035.asy
Approximate models for hand calculations
C
gs
[3 fF/(m)
2
]*W*L
C
gd
[0.3 fF/(m)]*W
C
db
[1.5 fF/(m)]*W
C
sb
[1.5 fF/(m)]*W + [0.75 fF/(m)
2
]*W*L
Beware: do not expect very accurate results using hand
calculations, especially for short channel lengths (L < 2 )
C
gs
[3 fF/(m)
2
]*W*L
C
gd
[0.15 fF/(m)]*W
C
db
[2.5 fF/(m)]*W
C
sb
[2.5 fF/(m)]*W + [1.25 fF/(m)
2
]*W*L
NMOS
PMOS
nmos_035.asy
pmos_035.asy