1-4

1 .
19
.
)( .
. 1901 2 ) - ( 1904
3 ) ( .

1
2
3
4

Vacuum Tube
Helmut Braun
John Fleming
Thermo-Ionic

 .1
. .
2 3 .

.

2-4
.4

- - 6
. < 10 -2 cm

7 .
- -
.
> 105 cm 8 .

1 . . 1-4
2

Germanium
3Silicium, Silicon

4 . . 2-4 . ] [2.
5 . . 4-2
6
7
8

Conductance
Insulator

 .
. 1-4 )(

VI

IV

III

II

Be

Si

Al

Mg

Se

As

Ge

Ga

Zn

SiC

Te

Sb

Sn

In

Cd
Ca

SiGe GaP AlAs AlP

Po

Bi

Pb

Tl

Hg

1-4

GaAs GaN

CdSe CdS ZnS :

AgGaS2 ZnSiP2 CdGeAs2 Sb2Te3 Zn3 As2 ZnO CuO PbO PbS
[1] .
) ( Si
.

1-2-4
1
. - -
2-4 .
1

 4 .
.
1 . 2-4
.

.

+4

+4

+4

+4

+4

+4

+4

+4

+4

+4

+4

+4

.

2-4

+ 4 .

.
.
2 E 1.1eV .
- - .

.
.
3 .
1
2
3

Covalence
-19
1.610 J
Hole

1eV


) ( .
. 3-4 -
.

+4

+4

+4

+4

+4

+4

+4

+4

+4

+4

+4

+4

3-4 -

T = 0 K - 273C .
.
.
. .
:
) .(4-4 )(
)( .

4-4

) .(5-4
!

5-4

 .
! 6-4
.

6-4

. .
.

.

.
) ( .


) ( .
1
2 .
.

2-2-4
T = 0 K

. 3
) ( ni ( Si) = 1.5 1010 cm-3 ) ( n( Me) 1023 cm-3
.

4 . ) ( In
) ( Ga ) ( B .
P 5 .

1
2
3
4
5

Generation
Recombination
ni : Intrinsic Density
Doping
Acceptor

 ) ( Sb ) ( P ) ( As
. N 1.
7-4
.

+4

+4

+4

+4

+3

+4

+4

+4

+4

+4

+4

+4

7-4

) (
.

.
. .

. .
1

Donor

 P .
- P -
) ( .
7-4
.

+4

+4

+4

+4

+4

+5

+4

+4

+4

+4

+4

+4

8-4

- -
) ( .

.
.
.

 N
N .

. 108
24000 ] .[2
)(
.
.

3-2-4 P - N

1 P - N P N .

.
P - N .
9-4 P - N . N

P P
N N P
. N P )(
. P N
1

P-N Junction

 . W
.
1 2 . N
P .
3 .

.
N

9-4 P-N

P - N
. P - N 4 .
P N
5 . 6 ) ( W
.

1
2
3
4
5
6

Depletion Region
Transition Region
Space Charge Region
Biasing
Forward Biased
Junction

 . 1
2 3 .
.
.
P

.
N
.
.
. .
P N
4 .
)(.
P

.
N
.
. .
1
2
3
4

RB: Balk Resistance

RS: Series Resistance
rj: Junction Resistance
Reverse Biased

 . ) (
P - N
.
1 . ) (
)( .

Reverse Saturation Current

 3-4
P - N
.
V - I
1 ) (1-4 .

)(1-4

i D I s e vD / nVT - 1

I s 2 3 .
4 I s 10-14 A ) .
.( I s 10-17 L10-3 A
VT 5 ) (2-4 .
k .T
q

)(2-4

= VT

k = 1.38 10 23 J / K : T q = 1.6 10 19 As
. ) . VT = 25.7mV ( 25oC 298K -
VT = 25mV - .
T = 290 K . ( T = 17C ) 17
) ( 300 K ) 27( . n

1 ) (Semiconductor-Diode
. - .
Saturation Current 2
Scaling Factor 3
4 5 .. 10C .
5

Thermal Voltage

 . n 0.5L 3.5
. n1.8 n = 1

. ) (1-4 ) ( .
10-4 .
iD

vD
iD
vD

10-4 - -

2 .1
)(3-4

I D = Const

(T2 - T1 ),

) 3-4(

2mV
K

VD (T2 ) = VD (T1 ) -

- 2mV / K
ID

VD
T

1 2mV / o C
VD 1.6L 2.5mV / o C.
T

 10 o C
) 30 o C ( .1

(
)
I D (T2 ) = I D (T1 ).2 T2 -T1 / 10 K , VD = Const

)(4-4

2-5 .

iD

T2 T1

iD

T2 T1

I2

ID

T2 > T1

T2 > T1

I1

vD

V1

vD

V2

VD

11-4 : - -

60
.
V D >> nV ):(1-4
: . T
) 1-4(

i D = I s e v D / n.VT

:
)(5-4

) v D = n.VT ln (i D / I s

) ln(x ) = 2.3 log(x n.VT = 26mV:

1 .

i
vD = 60mV . log D
Is

) 5-4(
iD = I1:

I
V1 60mV log 1
Is

iD = I 2:

I
V2 60mV log 2
Is

:
I
V2 V1 60mV log 2
I1

)(6-4

4-4 DC
-
-

iD

vD

V DD

. 12-4

12-4

. VDD R

. ) I s ( n ) ( T VDD

R VD I D .
VDD = iD .R + vD

vD / n .VT
iD I s e

VD I D :
)(7-4

V
-v
iD = DD D
R

VDD - vD - I s R.ev D / n.VT = 0,


.
1 2 .

1-4-4
- -
1
1
) .(13-4 ) (7-4 iD = (VDD vD ) :
R
R

v D VDD iD
VDD

. s =

iD

.
VDD

3 . -

ID

- 13-4
vD

DD

12

13-4
3--54

4-5

. ) VD ( I D .
.
.

Graphical Analysis
Trial and Error (Iterative)

Load Line
Operating (Quiescent) Point

 2-4-4
( x1 ) VD ( y1 ) I D
. ) ( y1 VD ) .( x2
x3 .
x2 1 x1 x3 ) x2 y ( .
.
:
:1-4 R = 10k VDD = 12V 12-4
I s = 10 14 A nVT = 25mV VD I D .
: 12-4 ):(7-4
VDD VD 12V VD
=
R
10k

)(

= ID

) 5-4(:
I

V D = 60mV . log 11D

10 mA

)(

VD )( : : VD0 = 0 2
12V - VD0
= 1.2mA
10k

= I D0 . I D0 )(:
= 664.7517 mV

1 .2
10-11

= 60mV . log

I D0
mA

-11

10

VD1 = 60mV . log

1 ) (Convergent.
2
.

 .
:
12V - VD1 12V - 0.66475V
=
= 1.1335mA
10k
10k

= I D1

= 60mV . log 1.1335 1011 = 663.27 mV

I D1
mA

-11

10

VD2 = 60mV . log

12V - VD2 12V - 0.66327V

=
= 1.1337 mA
10k
10k

= I D2

) I D %0,006 VD ) %0,11((
VD = 664mV I D = 1.1337mA .
. 1-4
.
1-4 12-4

]Ermax (I ) [%

]I j [mA

]Ermax (V ) [%

] V j [mV

1.2

-2.8

1.13353

664.7517

+0.006

1.13367

-0.1117

663.2666

: VDD R )(.
: VDD = 1V R = 100 .

 3-4-4
I s 10 15...10 13 A
I D = 10AL10mA . ) 5-4(:
)(8-4

I
VD = 60mV log D = 480L 780mV
Is

VD 0.5L 0.8V . VD = 0.6V VD = 0.7V

.
) n = 1
n = 1.2 -%17( .
VT VD I s .
) . . ) ((28-4 VDD R )(
! ) PSpice
( . VD = 0.6V :
12V - 0.6V
= 1.14mA
10k

= ID

) (1-4:
1.14mA - 1.13367 mA
= +0.558%
1.13367 mA

= Er

VD = 0.7V :
12V - 0.7V
= 1.13mA
10k

= ID

1.13 - 1.13367
= -0.324%
1.13367

= Er

!
VDD > VD 0.7V )( .
VD = 0.7V .

5-4

. ) (1-4 .
I s n .
PSpice 14 !
.
12-4 1-4 .
.
.
)( )(
. .
. :
) ( )
(.

 1-5-4

.
-
) VDD R (12-4 -
) ) ( VD , I D .(13-4 VDD VD
I D . VD I D
. 1 ) ( 2
3 4
.
0,7 .
10 .

: ) ( .
) ( .
. VD : : I D

Signal

2 . . 2-1
3
4

Small Signal
Large Signal

 : VAK : RL : VRef . ...

:
.1 : .
.) v D :
(.
.2 : DC .
.) VD :
(.
.3 : AC .
.) vd :
(.
.4 :
.
.) Vd :
(.

14-4 .

]v D [V

vd

Vd

vd
5

vd
vD

VD

vD

vD
1

14-4

36-5

:
)(9-4

v D = V D + vd

) DC (
) AC( .
5 .:
vD = 3L7V ) (
vd = 2L 2V AC) (
VD = 5V DC ) (
Vd = 2V ) (

15-4 . VD = 0 Vd = 1mV I s = 10 fA :
n = 1 VT = 25mV iD = 0 )(

iD
iD

+-

vd

+
-

vD
VD
vD

Q
ID

VD

--

--
15

37--45

) (1-4 15-4
1
VD 0.6 L 0.7V .2 3 .

. .
.
.
4.

1 ) . . (1-4-4
2
3
4

--   . .
Bias, Biasing
Small Signal Model

 : .
.
1 .2

:
)(10-4
Q

V
I

= RStat

:
v
i

)(11-4

= rdyn

16-4
.

Static Resistance

Dynamic Resistance

Q1

r1

Q1

R1

Q1

R2

Q2
v

r2

Q2
v

Q2

16-4 - -
- Q1

Q2

.
. 1
.
)( .
) (1-4 ) (11-4 . ) (28-5 .

) 1-4(

iD I s ev D / nVT - 1 I s ev D / nVT
I
1
iD
1
=

I s eVD / nVT = D
rd vD
nVT
nVT
ID
nVT
ID

)(12-4

rd

rd I D . n = 1
: VT = 25mV

Ohmic Resistance

][, mA

) 12-4(

25
ID

= rd

25
25 50 500 .
)(
) (.
) ( rd
) ( !
.
)(13-4

VP 10mV

rd : I D VD
v D iD )( )( n VT I S

) 10-4 ) ((1-4.
. ) 1-4( :
)(14-4

vD = VD + vd

iD = I D + id

:
)(15-4

I D I s eVD / n.VT

)(16-4

i D = I s e (VD + vd ) / n.VT

:
)(17-4

i D = I s eVD / n.VT .e vd / n.VT = I D .e vd / n.VT

) (1:
)(18-4

1 2 1 3
1
x + x + L + xn + L
2
6
!n

Vd
<< 1 :
n.VT
Vd
=x
n.VT

ex = 1+ x +

) (18-4

) (17-4 :

)(19-4

v
i D I D 1 + d
n.VT

. 2 .
.
: :
:

y = ex

)y = (1 + x

y - y
y

= Er

:
1+ x - ex

)(20-4

1
2

ex

Tylor
Small Signal Approximation

= Er

 2-4 x
n.VT = 25mV :
2-4
1

0.5

0.4

0.2

0.1

0.05

0.02

25

12.5

10

2.5

1.25

0.5

-26.4

-9.0

-6.2

-1.75

-0.47

-0.12

-0.02

vd

nVT

]x [1

] [

Vd (n.VT = 25mV ) mV p
]Er [%

= x n VT = 25mV Vd < 13mV

%10 . 4
%1 %5
10 ) ( .

) ( ! )(

2-5-4
) 100( 17-4
17-4 .
) (1-4 17-4
0 v S 0.5V

 v D v S . i D 0 1 .
VD VS 0.6V
. ) Vd 17-4( 2
V f VDO VDON Vd V .
vS
VD 0.8L 0.9V .
iD
R

iD
+

vD

+-

Vs

Vr

vD
Vd

--

--
175--45

) ( VD > 0
. ) ( VD < 0
. ) (1-4 :

)(1-4

1
2

iD = I s ev D / nVT 1

Cut-Off
Cut-In Voltage, Diffusion Voltage

 - I s < iD < 0 . iD 0 )
( . ) (1-4
VD Vr ) 17-4( .
Vr 1 VRmax VR Vmax VBD BV .
-
-
) (.
:
) 17-4( . 2 . 3

. .
5 .
.
. ) (1-4
.
0,9
.
. 15 !

1
2
3
4
5

Breakdown Voltage
Electrode
Anode
Cathode
. . 2-1

 ) (1-4 .1
.
.
17-4 :
- :

Vr < v D < Vd

- :

v D > Vd

- :

v D < Vr

- -
17-4

iD

18-4 .
s = 1/R f

) (9-4 .
vD :

Vr

vD
Vd

s = 1/R r

iD Vr Vd
Rr Rf

)(21-4

186--45

vD < Vr

for

Vr < vD < Vd

for

vD > Vd

. . 4-4

for

vD Vr

Rr

iD = 0

vD Vd
R
f

 - -
) 7-5 ).((21-4
iD

)(22-4

vD < Vd

for

vD > Vd

for

iD = v V
D
d

R f

s = 1/Rf

vD
Vd

-4

7-19
5

Rf . -
- Rf ) .(Rf 0
) (23-4 20-4 .
iD

)(23-4

vD < Vd

for

iD > 0

for

iD = 0

vD = Vd

vD
Vd

-4

8-5 20

- - .

. .Vd 0
) (24-4 21-4
. .

iD

)(24-4

vD 0

for

iD 0

for

iD = 0

vD = 0

vD

21-4

9-5

:
:
: .
22-4 ) (25-4 .
iS
ON
Switch ON
OFF

vS
Switch OFF

:
-

22-10
4

-:

-5

)(25-4

OFF

Switch

ON

Switch

iD = 0

vD = 0

23-4 .
VAK 0
Vd
K

Rf

D_ideal

1123
-5-4

 . VAK > 0 ) 0,7( )

.(19-4
20-4 21-4 .
1
2 .

ON

OFF

 6-4
.
.
.

1-6-4
1-5-4
.

.
2-4 vo (t ) 24 -4
VP = 20mV f = 10kHz n.VT = 25mV :
VC = 10V -

R1

VC = 100V -

1Meg
C2
Vo

vD

1u

C1
1u

R2
10k
+

RL

+-

D1

1Meg

Vs

:
24-4 2-4

VC -1 R1 . DC
.

Vc

 -2 AC ) ) ( vs (t 10kHz .
1
1 R1 C1 = 10ms 2 RL C2 = 1s = 100 s
f

= T

- - .
24-4 25-4 :
R1

VD

vd

R2

Vo
1Meg

10k
+
-

D1

Vc

RL

R1

1Meg

1Meg

rd

+-

Vs

25-4 - -

-1 :
VC
R1

VC >> VD I D

VC VD
,
R1

= ID

VD 0.7V ,

-2 :
) (
: rd << R1 || RL

rd
vs
rd + R 2

vo

:
10V
25mV
= = 10 A rd
= 2.5k
1M
ID

VC = 10V I D

rd
2.5k
= vs
) VP Sin(t ) = 4mV Sin(t
rd + R 2
2.5k + 10k

= vo

100V
25mV
= = 100 A rd
= 250
1M
100 A

VC = 100V I D

rd
250
= vs
) V P Sin(t ) 0.5mV Sin(t
rd + R 2
250 + 10k

= vo

. ) 4 0/5 (
10 2.5k ) rd ( 250 R 2 || R1 = 500k

.
: VC I D .
) ( .

.
1 .
2 -
) .(26-4 .
+
n

3

. )(.

p
_
.

26-4

) ( . .

1 . . 3-2-4
2
3

Depletion-Layer