CEN-501 Homework#1

Assigned: Sept.1 -- Due: Sept.8

1. Complete the following:
a. Search the web for the following technology parameters of any CMOS technology
(technology parameters given in the book are OK):
i. Typical vdd
ii. Channel length
iii. Minimum size NMOS transistor
iv. Electron and hole mobility (un, up)
v. Oxide thickness
vi. Cox
vii. Channel length modulation ()
viii. Body effect coefficient ()
ix. VT for NMOS and PMOS devices
x. B
b. Calculate:
i. Maximum IDS current that a minimum sized NMOS can provide, and RON for:
1. IDS for VGS=VDS=VDD/2
2. IDS for VGS=VDD/2, VDS=VDD
3. IDS for VGS=VT+01, VDS=0.1
4. IDS for VGS=VT+0.3, VDS=0.1
5. IDS for VGS=VT=0.3, VDS=0.6
ii. VT for VSB=0.1
iii. VT for VSB=0.3
iv. Gate capacitance for minimum size NMOS
v. Using the equation t=CV/I, calculate t (time to charge the capacitor C from (iv)
for every current calculated at (i).
vi. How does (v) compare with using t=0.69RON*C, with RON calculated at (i) and C
calculated at (iv). Draw a table and compare in term of percentage. Comment
the results.