SemiWell Semiconductor

SBP13009-O

High Voltage Fast-Switching NPN Power Transistor

Features

Symbol

- Very High Switching Speed

- Minimum Lot-to-Lot hFE Variation
- Wide Reverse Bias S.O.A

1.Base

2.Collector

3.Emitter

General Description
TO-220
This device is designed for high voltage, high speed switching characteristic required such as lighting system, switching mode power
supply.

Absolute Maximum Ratings

Symbol

Parameter

Value

Units

VCES

Collector-Emitter Voltage ( VBE = 0 )

700

VCEO

Collector-Emitter Voltage ( IB = 0 )

400

VEBO

Emitter-Base Voltage ( IC = 0 )

9.0

IC

Collector Current

12.0

ICP

Collector Pulse Current

24.0

IB

Base Current

6.0

IBM

Base Peak Current ( tP 5 ms )

12.0

PC

Total Dissipation at TC = 25 C

100

- 65 ~ 150

150

Value

Units

TSTG
TJ

Storage Temperature
Max. Operating Junction Temperature

Thermal Characteristics
Symbol

Parameter

RJC

Thermal Resistance, Junction-to-Case

1.67

C/W

RJA

Thermal Resistance, Junction-to-Ambient

62.5

C/W

Jul, 2006. Rev. 0

1/5
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved

SBP1300-O
Electrical Characteristics
Symbol
ICEV

VCEO(sus)

( TC = 25 C unless otherwise noted )

Parameter
Collector Cut-off Current
( VBE = - 1.5V )

VCE = 700V
VCE = 700V

Collector-Emitter Sustaining Voltage

( IB = 0 )

IC = 10 mA

VCE(sat)

Collector-Emitter Saturation Voltage

VBE(sat)

Base-Emitter Saturation Voltage

hFE*

ts
tf

Condition

DC Current Gain

Storage Time
Fall Time

TC = 100 C

IC = 5.0A
IC = 8.0A
IC = 12.0A

IB = 1.0A
IB = 1.6A
IB = 3.0A

IC = 5.0A
IC = 8.0A

IC = 5.0A
IC = 8.0A
IC = 8.0A
IB1 = 1.6A

Typ

Max

Units

1.0
5.0

mA

400

IB = 1.0A
IB = 1.6A

VCE = 5V
VCE = 5V

10
5

VCC = 125V
IB2 = -1.6A

TP = 25

Notes :
1. hFE Sorting : R-Grade(18~26), O-Grade(24~32), Y-Grade(30~40)
2. Pulse Test : Pulse width 300, Duty cycle 2%

2/5

Min

0.5
0.6
1.0

1.2
1.6

40
30

3.0
0.7

SBP13009-O
Fig 1. Saturation voltage

Fig 2. DC Current Gain

Fig 3. Swiching Time

Fig 4. Power Derating

Fig 5. Safe operation area

Fig 6. Collect output capacitance

3/5

SBP13009-O
Inductive Load Switching & RBSOA Test Circuit

LC

f
IC
IB 1

IB

VCE

D .U .T
R BB

V C la m p

VCC

V B E(o ff)

Resistive Load Switching Test Circuit

RC

IC
IB 1

IB

VCE

D .U .T
R BB

VCC

V B E(o ff)

4/5

SBP13009-O
TO-220 Package Dimension

Dim.

mm
Typ.

Min.
9.7
6.3
9.0
12.8
1.2

A
B
C
D
E
F
G
H
I
J
K
L
M
N
O

Max.
10.1
6.7
9.47
13.3
1.4

Inch
Typ.

Min.
0.382
0.248
0.354
0.504
0.047

1.7
2.5

0.067
0.098

3.0
1.25
2.4
5.0
2.2
1.25
0.45
0.6

3.4
1.4
2.7
5.15
2.6
1.55
0.6
1.0

0.118
0.049
0.094
0.197
0.087
0.049
0.018
0.024

0.134
0.055
0.106
0.203
0.102
0.061
0.024
0.039

3.6

E
B

Max.
0.398
0.264
0.373
0.524
0.055

0.142

C1.0

C
M

G
1
D

1. Base
2. Collector
3. Emitter

N
K

5/5