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PD - 93894A

IRFB23N15D
IRFS23N15D
IRFSL23N15D

SMPS MOSFET

HEXFET Power MOSFET

Applications
High frequency DC-DC converters

VDSS

RDS(on) max

ID

150V

0.090

23A

Benefits
Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
TO-220AB
l Fully Characterized Avalanche Voltage
IRFB23N15D
and Current
l

D2Pak
IRFS23N15D

TO-262
IRFSL23N15D

Absolute Maximum Ratings

Parameter
ID @ TC = 25C
ID @ TC = 100C
IDM
PD @TA = 25C
PD @TC = 25C
VGS
dv/dt
TJ
TSTG

Continuous Drain Current, VGS @ 10V

Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw

Max.
23
17
92
3.8
136
0.9
30
4.1
-55 to + 175

Units
A
W
W/C
V
V/ns
C

300 (1.6mm from case )

10 lbfin (1.1Nm)

Typical SMPS Topologies

l

Telecom 48V input DC-DC Active Clamp Reset Forward Converter

Notes

through

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IRFB/IRFS/IRFSL23N15D
Static @ TJ = 25C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
V(BR)DSS

IDSS

Drain-to-Source Leakage Current

IGSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Min.
150

3.0

Typ.

0.18

Max. Units
Conditions

V
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA
0.090

VGS = 10V, ID = 14A

5.5
V
VDS = VGS, ID = 250A
25
VDS = 150V, VGS = 0V
A
250
VDS = 120V, VGS = 0V, TJ = 150C
100
VGS = 30V
nA
-100
VGS = -30V

Dynamic @ TJ = 25C (unless otherwise specified)

gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.

Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance

Min.
11

Typ.

37
9.6
19
10
32
18
8.4
1200
260
65
1520
120
210

Max. Units
Conditions

S
VDS = 25V, ID = 14A
56
ID = 14A
14
nC
VDS = 120V
29
VGS = 10V,

VDD = 75V

ID = 14A
ns

RG = 5.1

VGS = 10V

VGS = 0V

VDS = 25V

pF
= 1.0MHz

VGS = 0V, VDS = 1.0V, = 1.0MHz

VGS = 0V, VDS = 120V, = 1.0MHz

VGS = 0V, VDS = 0V to 120V

Avalanche Characteristics
Parameter
EAS
IAR
EAR

Single Pulse Avalanche Energy

Avalanche Current
Repetitive Avalanche Energy

Typ.

Max.

Units

260
14
13.6

mJ
A
mJ

Typ.

Max.

Units

0.50

1.1

62
40

Thermal Resistance
Parameter
RJC
RCS
RJA
RJA

Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient

C/W

Diode Characteristics
IS
ISM

VSD
trr
Qrr
ton

Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time

Min. Typ. Max. Units

Conditions
D
MOSFET symbol
23

showing the
A
G
integral reverse
92
S
p-n junction diode.
1.3
V
TJ = 25C, IS = 14A, VGS = 0V
150 220
ns
TJ = 25C, IF = 14A
0.8 1.2
C
di/dt = 100A/s
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

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IRFB/IRFS/IRFSL23N15D
100

100

VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V

10

5.0V
0.1

20s PULSE WIDTH

TJ = 25 C

0.01
0.1

10

10

5.0V

3.5

R DS(on) , Drain-to-Source On Resistance

(Normalized)

I D , Drain-to-Source Current (A)

TJ = 175 C
10

TJ = 25 C
1

V DS = 50V
20s PULSE WIDTH
6

10

11

VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

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10

100

Fig 2. Typical Output Characteristics

100

VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

0.1

20s PULSE WIDTH

TJ = 175 C

1
0.1

100

VDS , Drain-to-Source Voltage (V)

VGS
15V
12V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
TOP

I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

TOP

12

ID = 23A

3.0

2.5

2.0

1.5

1.0

0.5

0.0
-60 -40 -20

VGS = 10V
0

20 40 60 80 100 120 140 160 180

TJ , Junction Temperature ( C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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IRFB/IRFS/IRFSL23N15D
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd

C, Capacitance(pF)

Coss = Cds + Cgd

Ciss

1000

Coss
100

Crss

VGS , Gate-to-Source Voltage (V)

20

10000

10

100

VDS = 120V
VDS = 75V
VDS = 30V

16

12

10
1

ID = 14A

FOR TEST CIRCUIT

SEE FIGURE 13

1000

10

VDS , Drain-to-Source Voltage (V)

100

40

50

60

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

I D , Drain Current (A)

ISD , Reverse Drain Current (A)

30

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

10

TJ = 175 C

TJ = 25 C
1

100
10us

100us
10
1ms

0.1
0.2

V GS = 0 V
0.4

0.6

0.8

1.0

1.2

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

20

QG , Total Gate Charge (nC)

TC = 25 C
TJ = 175 C
Single Pulse

1.4

10ms
10

100

1000

VDS , Drain-to-Source Voltage (V)

Fig 8. Maximum Safe Operating Area

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IRFB/IRFS/IRFSL23N15D
25

VDS
VGS

I D , Drain Current (A)

20

RD

D.U.T.

RG

-VDD

15

10V
Pulse Width 1 s
Duty Factor 0.1 %

10

Fig 10a. Switching Time Test Circuit

5

VDS
90%

0
25

50

75

100

125

150

175

TC , Case Temperature ( C)
10%
VGS

Fig 9. Maximum Drain Current Vs.

Case Temperature

td(on)

tr

t d(off)

tf

Fig 10b. Switching Time Waveforms

Thermal Response (Z thJC )

10

1
D = 0.50
0.20
P DM

0.10
0.1

0.05
0.02
0.01

0.01
0.00001

t1
t2

SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001

0.001

0.01

0.1

t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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IRFB/IRFS/IRFSL23N15D
600

D R IV E R

VDS

D .U .T

RG

+
V
- DD

IA S
20V
tp

0 .0 1

Fig 12a. Unclamped Inductive Test Circuit

V (B R )D SS
tp

EAS , Single Pulse Avalanche Energy (mJ)

1 5V

TOP
500

BOTTOM

ID
14A
9.8A
5.6A

400

300

200

100

0
25

50

75

100

125

150

175

Starting TJ , Junction Temperature ( C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

QG

10 V

50K
12V

.2F
.3F

QGS

QGD
D.U.T.

VG

+
V
- DS

VGS
3mA

Charge

Fig 13a. Basic Gate Charge Waveform

IG

ID

Current Sampling Resistors

Fig 13b. Gate Charge Test Circuit

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IRFB/IRFS/IRFSL23N15D
Peak Diode Recovery dv/dt Test Circuit
+

D.U.T

Circuit Layout Considerations

Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer

RG

dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test

Driver Gate Drive

P.W.

D=

Period

+
-

VDD

P.W.
Period
VGS=10V

D.U.T. ISD Waveform

Reverse
Recovery
Current

Body Diode Forward

Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt

Re-Applied
Voltage

Body Diode

VDD

Forward Drop

Inductor Curent
Ripple 5%

ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET Power MOSFETs

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IRFB/IRFS/IRFSL23N15D
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)

2 .8 7 (.1 1 3 )
2 .6 2 (.1 0 3 )

1 0 .5 4 (.4 1 5 )
1 0 .2 9 (.4 0 5 )

-B -

3 .7 8 (.1 4 9 )
3 .5 4 (.1 3 9 )

4 .6 9 (.1 8 5 )
4 .2 0 (.1 6 5 )

-A -

1 .3 2 (.0 5 2 )
1 .2 2 (.0 4 8 )

6.4 7 (.2 5 5 )
6.1 0 (.2 4 0 )

4
1 5 .2 4 (.6 0 0 )
1 4 .8 4 (.5 8 4 )

1 .1 5 (.0 4 5 )
M IN
1

1 4 .0 9 (.5 5 5 )
1 3 .4 7 (.5 3 0 )

4 .0 6 (.1 6 0 )
3 .5 5 (.1 4 0 )

3X
3X

1 .4 0 (.0 5 5 )
1 .1 5 (.0 4 5 )

L E A D A S S IG N M E N T S
1 - GATE
2 - D R A IN
3 - S OU RC E
4 - D R A IN

0 .9 3 (.0 3 7 )
0 .6 9 (.0 2 7 )

0 .3 6 (.0 1 4 )

3X
M

B A M

0 .5 5 (.0 2 2 )
0 .4 6 (.0 1 8 )

2 .9 2 (.1 1 5 )
2 .6 4 (.1 0 4 )

2 .5 4 (.1 0 0)
2X
N O TE S :
1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H

3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B .
4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .

TO-220AB Part Marking Information

E X A M P L E : T H IS IS A N IR F 1 0 1 0
W IT H A S S E M B L Y
LOT C ODE 9B1M

IN T E R N A T IO N A L
R E C T IF IE R
LOGO
ASSEMBLY
LOT CODE

PART NU M BER
IR F 1 0 1 0
9246
9B
1M

D ATE CO DE
(Y Y W W )
YY = YEAR
W W = W EEK

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IRFB/IRFS/IRFSL23N15D
D2Pak Package Outline

1 0.54 (.4 15)

1 0.29 (.4 05)
1.4 0 (.055 )
M AX.

-A-

1.3 2 (.05 2)
1.2 2 (.04 8)

1.7 8 (.07 0)
1.2 7 (.05 0)

1 0.16 (.4 00 )
RE F.

-B -

4.69 (.1 85)

4.20 (.1 65)

6.47 (.2 55 )
6.18 (.2 43 )
15 .4 9 (.6 10)
14 .7 3 (.5 80)

2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )

5 .28 (.20 8)
4 .78 (.18 8)

3X

1.40 (.0 55)

1.14 (.0 45)
3X
5 .08 (.20 0)

0.5 5 (.022 )
0.4 6 (.018 )

0 .93 (.03 7 )
0 .69 (.02 7 )
0 .25 (.01 0 )

8.8 9 (.3 50 )
R E F.

1.3 9 (.0 5 5)
1.1 4 (.0 4 5)

B A M

M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )

NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.

LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E

8.89 (.3 50 )
17 .78 (.70 0)

3 .8 1 (.15 0)
2 .08 (.08 2)
2X

2.5 4 (.100 )
2X

D2Pak Part Marking Information

IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E

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PART NUM BER

F530S
9 24 6
9B
1M

DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK

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IRFB/IRFS/IRFSL23N15D
TO-262 Package Outline

TO-262 Part Marking Information

10

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IRFB/IRFS/IRFSL23N15D
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4 .1 0 ( .1 6 1 )
3 .9 0 ( .1 5 3 )

F E E D D IR E C TIO N 1 .8 5 ( .0 7 3 )

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )

1 1.6 0 (.4 57 )
1 1.4 0 (.4 49 )

1 .6 5 ( .0 6 5 )

0.3 6 8 (.01 4 5 )
0.3 4 2 (.01 3 5 )

1 5 .42 (.60 9 )
1 5 .22 (.60 1 )

2 4 .3 0 (.9 5 7 )
2 3 .9 0 (.9 4 1 )

TRL
1 .75 (.06 9 )
1 .25 (.04 9 )

1 0.9 0 (.4 2 9)
1 0.7 0 (.4 2 1)

4 .7 2 (.1 3 6)
4 .5 2 (.1 7 8)

16 .1 0 (.63 4 )
15 .9 0 (.62 6 )

F E E D D IR E C T IO N

13.50 (.532 )
12.80 (.504 )

2 7.4 0 (1.079 )
2 3.9 0 (.9 41)
4

3 30 .00
( 14.1 73 )
MAX.

Notes:

6 0.0 0 (2.36 2)
M IN .

N O TE S :
1 . CO M F OR M S TO E IA -418 .
2 . CO N TR O L LIN G D IM E N SIO N : M IL LIM E T ER .
3 . DIM E NS IO N M EA S UR E D @ H U B.
4 . IN C LU D ES FL AN G E DIST O R T IO N @ O UT E R E D G E.

Repetitive rating; pulse width limited by

max. junction temperature.

Starting TJ = 25C, L = 2.7mH

RG = 25, IAS = 14A.

26 .40 (1 .03 9)
24 .40 (.9 61 )
3

30.4 0 (1.19 7)
M A X.
4

Pulse width 300s; duty cycle 2%.

Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS

This is only applied to TO-220AB package

TJ 175C
This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD 14A, di/dt 240A/s, VDD V(BR)DSS,

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IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 6/00

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