Lab 11 Report

Characterization of the BJT

Kevin Bradshaw & Yuan Tian
ECEN 325-503
Instructor: Sebastian Hoyos
December 2, 2015
Items
1
2
3
4
5
6
7

Pre-lab
Title Page
Intro /Theory / Procedure
Summary
Experimental Results /
Analysis / Discussion
Problems Encountered
Conclusion
Questions
Total

Grade Assigned
20%
5%
10%
40%
5%
5%
15%
100%

Student's Grade

Objectives

Understand the small signal models of the MOS amplifier

configurations.
Evaluate the DC operating point of a single MOS amplifier.
Analyze the different parameters of the common source and drain
configurations.

Procedure
In this lab, the MOSFET circuit (Figure 1) from the pre-lab was built with the
values measured in the pre-lab. The input voltage was set to 10 Volts and the
potentiometer was adjusted according to the voltage across RD (Resistance at
the Drain terminal of the MOSFET) at approximately 5 Volts.
Figure 1: MOSFET Circuit

Keeping the input voltage the same, the transistor was then warmed by
placing a thumb on the top part of this package. By doing this, the voltage at
the drain started to rise linearly by about 0.003 Volts per second. Lastly,
gate-source voltage was changed from 1 to 3 V in increments of 0.1 V in
order to sweep the input voltage. These observations are recorded in Table 1.
Figure 2: Common Source Amplifier

Then the circuit shown in Figure 2 was constructed with the measurements
used in the prelab and a 10 kHz, 10 mV input was applied to it. The small
signal gain and input impedance is recorded in Table 2. The capacitor
connected to the source was removed and gain was measured to be about
2.5 Volts. After the capacitor was reconnected, the frequency was swept at
the input. The low -3dB frequency was approximately 100 Hz while the high
-3dB frequency was approximately 500 kHz. Lastly, the distortion
performance of the Common Source configuration was obtained. Section 503
of the class only did steps 1 through 9 of this lab.
Data Tables
Table 1: MOSFET Gate Source Voltage
Sweep

VGS [V]

VD [V]

ID [A]

gm [1/]

1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3

0.0026
0.011
0.018
0.04
0.18
0.29
0.4
0.55
0.9
1.1
1.4
1.8
2.1
2.4
2.85
3.5
3.95
4.5
5.1
5.75
6.1

5E-07
2.2E-06
3.6E-06
8.1E-06
3.6E-05
5.9E-05
8.2E-05
0.0001
0.00018
0.00023
0.00029
0.00037
0.00043
0.00049
0.00058
0.0007
0.0008
0.0009
0.00102
0.0012
0.00123

-2.18E-06
-1.16E-05
-2.60E-05
-9.40E-05
-0.00095
0.0047
0.0013
0.00098
0.0011
0.0016
0.0011
0.0016
0.00116
0.00116
0.00124
0.0014
0.00141
0.00147
0.00155
0.00161
0.0016

Applicable Calculations
r ds =

1
ID
gm= (V GS V T )

Discussion
1. Pspice and Experimental Results:
As we changed the gate source voltage, the drain current also changed
very close to what the simulations from the pre-lab showed.
2. Threshold Voltage Relationship
The threshold voltage is decreased while warming the transistor with a
finger.
3. Input Impedance, Small Signal Voltage Gain, and -3dB Frequencies.
Input impedance and the -3dB frequencies can be found in the
procedure. Table 1 shows the calculated values for the
transconductance and below is a graph of the drain current vs. the
gate-source voltage.
Figure 3: Drain Current Vs. Gate Source Voltage
0
0
0
0
0
0
0
Drain Current 0

Gate Source Voltage

Problems Encountered
The main problem for this lab was getting the correct connections for the
MOSFET on the breadboard. After looking at the proper datasheet for the
CD4007 Transistor, we were able to connect the MOSFET correctly. Also, we
didn't have the proper time to complete everything because section 503 had
the actual lab day during a school break.
Conclusion
The purpose of this lab was to understand the fundamental concepts and
characteristics of MOSFET circuits. We learned how to analyze MOSFET's in
three different modes of operation by using circuit analysis tools that have
been used before. We calculated the relative parameters to determine how
each individual node influenced each other in the circuit. The graph of drain
current and the gate-source voltage showed us the linear relationship BJT's
are very important in control systems because they bridge the gap between
large loads and small loads.