Professional Documents
Culture Documents
2015-1
2015
SET - 1
Duration: 3 hrs
INSTRUCTIONS
1.
2.
This question paper consists of 2 sections, General Aptitude (GA) for 15 marks and the subject specific
GATE paper for 85 marks. Both these sections are compulsory.
3.
The GA section consists of 10 questions. Question numbers 1 to 5 are of 1-mark each, while question numbers 6 to
10 are of 2-marks each. The subject specific GATE paper section consists of 55 questions, out of which question
numbers 11 to 35 are of 1-mark each, while question numbers 36 to 65 are of 2-marks each.
4.
Questions are of Multiple Choice Question (MCQ) or Numerical Answer Type. A multiple choice question will have
four choices for the answer with only one correct choice. For numerical answer type questions, the answer is a number
and no choices will be given.
5.
Questions not attempted will result in zero mark. Wrong answers for multiple choice questions will result in NEGATIVE
1
2
mark will be deducted for each wrong answer. For all 2 marks questions,
mark
3
3
will be deducted for each wrong answer.
6.
GENERAL APTITUDE
1.
2.
3.
4.
5.
6.
7.
2015 -2
8.
9.
4
3
10.
TECHNICAL SECTION
QUESTION 11 TO 35 CARRY ONE MARK EACH
11.
SW
3V 120W B
A
t=0
0.1mF
(a) 0.3
(b) 0.45
(c) 0.9
(d) 3
15. The result of the convolution x (t) * d(t to) is
(a) x(t+to)
(b) x(tto)
(c) x(t + to)
(d) x(tto)
16. A function f(x) = 1 x2 + x3 is defined in the closed
interval [1,1]. The value of x, in the open interval (1,1)
for which the mean value theorem is satisfied, is
(a)
(c)
1
3
1
2
1
3
(b)
(d)
1
2
2015-3
18.
19.
0 0.5T
0 0.5T
(a)
(c)
20.
21.
+
T Vin
24.
4W
+
V2 5A
(b)
(d)
0.5T T
25.
0.5T T
0.5T T
26.
2
1
Hf
Hf
(a)
(b)
r
Hf
4
t
27.
t -1
A signal g(t) is defined by g(t) =
. The average
2
power of g(t) is ______.
22. The polar plot of the transfer G(s) =
23.
1
2
The value of p such that the vector is an eigenvector
3
Hf
(c)
1 2
4 3
+
2I V1
4W
4 1 2
p 2 1
is .
of the matrix
14 - 4 10
x(t)
3
4W
+
V out
K
. The value of
s(s + 1)(s+ 3)
the gain K( > 0) at which the root locus crosses the
imaginary axis is ______.
10(s + 1)
for
(s + 10)
(d)
r
r
In the network shown in the figure, all resistors are
identical with R = 300 W . The resistance Rab (in W ) of
the network is __________.
R
R
28.
R
R
R
R = 300W
R
1kW
10 V
+
1kW V0
2015 -4
29.
30.
4W
0.1mH
10 cos wt +
(Volts) ~
1mF
2p
-1
-2
1 w3 w 3 b Where w = e j 3
3
-2
w 3-4 c
1 w3
A
B =
C
32.
33.
1
2p
(b)
1
p
(c)
2
p
(d)
(t) sin(2 p
Consider the signal s(t) = m(t) cos (2 p fct) + m
(t) denotes the Hilbert transform of m(t) and
fct) where m
band width of m(t) is very small compared to fc. The signal
s(t) is a.
(a) High pass signal
(b) Low pass signal
(c) Band pass signal
(d) Double side band suppressed carrier signal
Let Z = x + iy be a complex variable consider continuous
integration is performed along the unit circle in anti
clockwise direction. Which one of the following statements
is NOT TRUE?
(a) The residue of
34.
(b)
c z
(c)
1
1
c dz = 1
2 pi z
z
2
z -1
at z = 1 is
1
2
dz = 0
p
q =
r
1 1 1 1 0 0
A / 3
1 w1 w 2 0 w 2 0 B / 3
3
3
3
,
1 w 2 w 4 0 0 w 4 C / 3
3
3
3
10 V
+
5/6 F
Vc (t)
) (
M M(a, b, c) , M a, b, c , c ) ?
2015-5
42.
43.
44.
47.
s+2
The value of RC
s+4
is _____________.
A MOSFET in saturation has a drain current of 1 mA for
VDS = 0.5V. If the channel length modulation coefficient is
0.05 V1, the output resistance (in kW) of the MOSFET is
_____
The solution of the differential equation
d 2 y 2 dy
+
+ y = 0 with y(0) = y (0) = 1 is
dt
dt 2
(a) (2 t)et
(b) (1+2t)e-t
-t
(c) (2 +t)e
(d) (1 2t)et
The input X to the Binary Symmetric Channel (BSC)
shown in the figure is 1 with probability 0.8. The crossover probability is 1/7. If the received bit Y = 0, the
conditional probability that 1 was transmitted is _______.
vss
ID
(a)
6/7
Y
X
0
0
P[X = 0] = 0.2
1/7
1/7
P[X = 1] = 0.8
1
45.
6/7
(c)
1
48.
(b)
Vth
vss
ID
VDDVth
vss
(d)
VDDVth
vss
vss
VDDVth
ID
For the discrete time system shown in the figure, the poles
of the system transfer function are located at
(a) 2, 3
(b) 1/2 , 3
(c) 1/2, 1/3
(d) 2, 1/3
x(n)
ID
V0
100W
250 (1- d)W
+
250 (1+ d)
100W
IV
50W
-1
49.
z 1
46.
z 1
R 2C
2L
(c)
R
2
C
L
(b)
(d)
2L
50.
R 2C
2
R
C
L
40 Vrms ~
j2W
RL
2015 -6
51.
f(in Hz)
1700
52.
700 0
700
(a)
1700
(b)
The longitudinal component of the magnetic field inside
an air-filled rectangular waveguide made of a perfect
electric conductor is given by the following expression
HZ (x,y,z,t) = 0.1 cos(25 px) cos(30.3 py )
cos(12 p
b z) (A/m)
The cross-sectional dimensions of the waveguide are
given as a = 0.08 m and b = 0.033 m. The mode of
propagation inside the waveguide is
(a) TM12
(b) TM21
(c) TE21
(d) TE12
(b)
f(x)
1
z(t)
(a)
H(f)
1 H(f)
f(x)
1
f(x)
1
f(x)
1
(c)
(d)
56. The pole zero diagram of a causal and stable discretetime system is shown in the figure. The zero at the origin
has multiplicity 4. The impulse response of the system is
h[n]. If h[0] = 1, we can conclude.
(a) h[n] is real for all n
(b) h[n] is purely imaginary for all n
(c) h[n] is real for only even n
(d) h[n] is purely imaginary for odd n
Im(z)
0.5
Re(z)
109t
53.
0.5
57.
58.
59.
(X + Y + Z)
54.
55.
(d) F = (X + Y + Z )( X + Y + Z)( X + Y + Z)
(X + Y + Z)
For a silicon diode with long P and N regions, the accepter
and donor impurity concentrations are 1 1017 cm3 and
1 1015 cm3, respectively. The lifetimes of electrons in P
region and holes in N region are both 100 ms . The
electron and hole diffusion coefficients are 49 cm2/s and
36 cm2/s, respectively. Assume kT/q = 26mV, the intrinsic
carrier concentration is 1 10 10 cm 3 and
q = 1.6 1019 C. When a forward voltage of 208 mV is
applied across the diode, the hole current density (in nA/
cm2) injected from P region to N region is _________.
Which one of the following graphs describes the function
f (x) = e - x (x 2 + x + 1) ?
60.
0.5
0.5
The transmitted signal in a GSM system is of 200 kHz
bandwidth and 8 users share a common bandwidth using
TDMA. If at a given time 12 users are talking in a cell, the
total bandwidth of the signal received by the base station
of the cell will be at least (in kHz) _______.
All the logic gates shown in the figure have a propagation
delay of 20 ns. Let A = C = 0 and B =1 until time t = 0.
At t = 0, all the inputs flip (i.e, A = C = 1 and B = 0) and
remain in that state. For t > 0, output Z = 1 for a duration
(in ns) of
A
Z
B
C
The built in potential of an abrupt p-n junction is 0.75 V.
If its junction capacitance (CJ) at a reverse bias (VR) of
1.25 V is 5 pF, the value of CJ (in pF) when VR = 7.25V is
_________.
In the circuit shown, I1 = 80 mA and I2 = 4mA. Transistors
T1 and T2 are identical. Assume that the thermal voltage
VT is 26 mV at 27C. At 50C, the value of the voltage
V12 = V1 V2 (in mV) is _____.
VS
I2
I1
V2
Q2
T2
V12
V1
+
Q1
T1
64.
Dielectric
r = 1 j2
er = 1 j2
10 cm
|E| = ?
K1
(b) 2K1 > Kp > 0
>0
2
(c) 2K1 < Kp
(d) 2K1 > Kp
The open loop transfer function of a plant in a unity
feedback configuration is given as
(a)
63.
2C
Kp >
K(s + 4)
.
G(s) =
2
(s + 8)(s - 9)
The value of the gain K (> 0) for which the point
1 + j2 lies on the root locus is _____ .
_
+
C
|E0| = 10 V/m
Freq. = 1.1 Ghz
62.
2015-7
(a)
2R
(b)
1
and R1 = 4R2
CR
1
and R1 = 4R2
2CR
1
A source emits bit 0 with probability
and bit 1 with
3
2
probability . The emitted bits are communicated to the
3
receiver. The receiver decides for either 0 or 1 based on
the received value R. It is given that the conditional
density functions of R are as
(c)
65.
1
and R1 = R2
CR
Vout
1
and R1 = R2 ,
2CR
(d)
1 -3 x 1,
1 -1 x 5,
and f R|1(r) = ,
fR 0 (r) = 4 ,
6
0 otherwise,
0 otherwise,
2015 -8
GENERAL APTITUDE
1.
11.
6)
60
72
72
60
2.
3.
4.
60 72
=1
72 60
(b) Memento means something that serves as a reminder.
(a) Croak is a hoarse sound made by a frog.
(c) Educe means to draw out.
5.
(a)
1
5
log x =
7
3
1
3
5
7
5
x=
7
x=
6.
7.
8.
9.
7
=
5
343
125
27
= 27
1
Total surface area of 27 cubes = 27 6 12 = 162
Surface area of cubes having side 3 units and visible
= 6 32 = 54
Surface area of not visible cubes = 162 54 = 108
Required proportion = 54 : 108 = 1 : 2
(a)
(b) The wall sometimes breaks, so Humpty Dumpty fall
sometimes while having lunch.
3
6 + 4 = 10,
10
=5
2
(7 + 4) + (2 + 1) = 14,
10.
66 6 66 + 6
=
66 + 6 66 6
=
TECHNICAL SECTION
ic = C
dVc
dt
= (0.1 10 6 )
d
[3 3e t / t ]
dt
3 0.1 t / t 0.3 t / t
=
e
e
12
12
Instantaneous power, p(t) = V(t) i(t)
=
14
=7
2
16
(1 + 9 + 2) + (1 + 2 + 1) = 16,
=8
2
10
(4 + 1) + (2 + 3) = 10,
=5
2
6
3 + 3 = 6, = 3
2
Missing value is 3.
(d) Line 3 and 4 clearly tells about this statement.
P (t ) = 3
0.3 t / t 0.9 t / t
e
=
e
12
12
0.9
E = Pdt =
e
12
12 10 6 0.9
12
E = 0.9 mJ
E=
t
t
0.9 t
0.9
=
e dt = t
12
12
2x + 3x2 =
17.
20.
P=
....(2)
....(3)
....(4)
2, 3, 4 in eqn 1
32
22.
(a) G(s) =
10( jw + 1)
jw + 10
2
| G ( j w) |=
D2
10 w2 + 1
w2 + 100
w
10
w | G ( jw) | G ( j w)
0 1
0
10
jw
w=0
10 s
D1
d
+
V1
10( s + 1)
s + 10
G ( j w) =
(3) 2
1
3
3+3
=2
3
2p
2p
b=
or l =
...(1)
t
b
1
Putting b =
in equation (1)
2
2p
l=
= 2p 2 = 8.885 m
1
2
(b) In negative feedback, sensitivity to parameter variable
will be reduce. So, improve disturbance rejection is
there.
Overall gain of negative feedback control system
gets reduce. Hence, bandwidth increases because
product of gain and bandwidth will remains constant
i.e. Gain Bandwidth = constant
(c) Given circuit can be simplified as
1 + 02 1 +
3
We know that
19.
1
16
ur
z
Given, E ( z, t ) = a y .2 cos(108 t
)
2
18.
1
1
=
s N N D qmn
10 1.6 10 19 1200
= 0.5208 Wcm
21.
2x + 3x2 = 1
3x2 2x 1 = 0
1
x = 1,
3
1
So,
lies in closed interval [1, 1]
3
8.885
Here, w = 108, b =
....(1)
1 (1)
1 (1)
23.
R
c
2015-9
12
For characteristics equation
1 + G(s) H(s) = 0
K
=0
s (s + 1)( s + 3)
(s2 + s) (s + 3) + K = 0
s3 + 3s2 + s2 + 3s + K = 0
s3 + 4s2 + 3s + K = 0
1+
2015 -10
s3
4
12 K
2
s1
24.
I
4W
5 = I + I + 2I
4I = 5, I =
17
4W
2I V1
2R
R/2
R/2
2R
1
1 1 1 1
=
+ + +
R e q 2 R R R 2R
(By KVL)
l
2 l
3 l
l = 12
P + 7 = 2 12
P = 17
I
2 pr
27.
R/2
Req
1
1+ 2 + 2 +1
=
Re q
2R
AX = l X
Hf =
Req
1
3
1
R 300
= ;
= =
= 100
Re q R Re q 3
3
28. 5
1kW
100
After parallel combination of adjacent branches, the
equivalent circuit redraw as
1kW
10 V
12 l
P + 7 = 2 l
36 3 l
(c)
R
R/2
4 1 2 1 l
P 2 1 2 = 2 l
14 4 10 3 3 l
26.
R
R/2
R/2
5
4
4+ 2+6
P+ 4+3 =
14 8 + 30
(By KCL)
5
V1 = 4 = 5V
4
V2 = 4 5 + V1
V2 = 25V
25.
R/2
Req
s0
K
For marginable stable root locus crosses the imaginary
axis
12 K
= 0 ; K = 12
4
4W
(a)
+
V2 5A
R/2
+
v0
1kW
10 V
+
v0
1kW
1 10
(By Voltage Divider Rule)
1+1
V0 = 5 V
In this case zener diode is in cut off state
So, V0 is 5V,
29. (b) In 8085 microprocessor, after performing the addition,
result is stored in accumulator and in any carry
(overflow bit) is generated, it updates the flags.
V0 =
25
34.
At resonance
w=
LC
0.1 10
110
7
Generally the structure of a memory chip = Number
of row (M) Number of column (N) = M N
The number of address line required for row decoder
is n where
M = 2n
Taking log both sides
n = log2M
According to question
M=N
\ M N = M M = M2 = 16K
M2 = 24 1024
M2 = 24 210 = 214
M = 27 = 128
1
1
= 5
= 10
wC 10 106
Z = R + j (XL XC) = 4 + j (10 10) = 4
V 10
I= =
Z
4
10
VC = X C I = 10 = 25 V
4
(a) fs = 20,000 samples per second
D = 0.1V
fm = 2 KHz
To prevent slope overload, condition given below is
XC =
31.
2
1 2 3 : 1
Augmented Matrix = [A:B] = 1 3 4 : 1
2 4 6 : k
D
= 2pfm A m
Ts
D.fs = 2p fm Am
0.1 20,000 = 2p 2 103 Am
32.
R2 R2 R1 ; R3 R3 + 2 R1
1
Am =
2p
(c) Given signal s(t) is the equation for single side band
modulation (lower side band). Thus it is a Band pass
filter.
s(f)
f
33.
z
2
z 1
1
1
= (True)
1 +1 2
From Option (b)
c z
dz = 2 pi (Residue = 0)
= 2pi 0 = 0 (True)
From option (c)
1
1
0
c z dz , Residue =
1
lim z. = 1
z
z 0
c z dz = 2pi
1
1
dz = 1 (True)
2pi z
c
1
1 1 :
2
0 0 : k 2
2 3 :
w32
w13
w34
w36
w35
1 1
1
1 w3
2
1 w3
1 w 2
3
1
1
1
3
1
1 w3
1 w2
3
1
= 1 1
3
1
1 w3
1 0
2
0 w3
0 0
0 1 w32
0 = 1 w33
w34 1 w34
(c)
z
z 1).
at z = 1 = zlim(
1
( z 1) ( z + 1)
2015-11
w13
w32
A
B
C
1 a
w13 1 1
1
1 1 w3 w32 b
1
= 1 + 1 + 1 1 + w31 + w32 1 + w32 + w31 b
3
1 + w31 + w13 c
1 + w13 + w32 1 + w30 + w03
2015 -12
\ w3 = e
j 2p
3
; w 32 + w13 = w3 + w 31 = w 31 + w32 = 1
p
0 0 3 a c
q = 1 3 0 0 b = a
3
r
0 3 0 c b
37.
2 A
= ab c + abc
1
1
B
1
ZX = abc
As, M (X, Y, Z) = XY + YZ + ZX
x2 + 4y2 = 1
x2
= c (a b) + c(a b)
y2
=1
12 ( 1 )2
2
Maximum Area
= 4 Area of DAOB
38.
= abc
This is a XOR gate expression.
ur
r
r
r
40. (a) P = x3 ya x x 2 y 2 a y x 2 yza z
ur
P =
1
1
2
= 4 1 = 1m
2
2
2.528
Vc (0) = 0 (Given)
V(t) = [Vc
Vc ( ) =
t
RC
(0) Vc ()]e
+ Vc ()
RC =
10 2
(By voltage Divider)
3+ 2
+4
t
(1 e 1
x2y
=0
ax
ay
az
x3 y
x2 y 2
x 2 yz
41. 0.5
)
V(t) = 4 (1
at t = 1
V(1) = 4 (1 e1) = 2.528 V
(b) M(a,b,c) = ab + bc + ca
Let Y = M (a, b, c ) = ab + bc + ca
X = M (a, b, c ) = ab + bc + ca
Z=c
M (X, Y, Z) = XY + YZ + ZX
XY = (ab + bc + ca) (ab + bc + ca)
6 5
3 2 6
= 1; R =
=
5 6
3+ 2 5
et)
39.
2x2y
ur
.P =
t
Rc
[0 4]e
V(t) = 4
3x2
ur
Hence solenoidal because .P = 0
Vc ( ) = 4V
V (t ) =
r r r
+ a y. + az
ax.
x
y
z
r
r
r
x3 ya x x 2 y 2 a y x 2 yza z
s+2
s+4
Transfer function of lead compensator
Gc (s ) =
Gc ( s ) =
a (1 + ts )
1 + ats
s
2(1 + )
2
Gc ( s ) =
s
4(1 + )
4
.....(1)
.....(2)
45.
(c) H(Z) =
a=
46.
d2 y
dt
1
1
=
lI DS 0.05 103
+2
1 L
....(2)
R C
Comparing eqn.(1) and (2)
Q=
dy
+y=0
dt
For C.F.
D2 + 2D + 1 = 0
D = 1, 1
y(t) = (C1 + C2 t)et
y(0) = 1
1 = C1
y(t) = C2et (C1 + C2 t) . et
y(0) = 1, 1 = C2 C1, C2 = 2
y(t) = (1 + 2t) . et
44.
1 1 L
=
2e R C
R C
2 L
(a) Here, VD = VG VDS = VGS
So, VDs > VGS VT
Hence, MOSFET is in saturation
In saturation,
ID = K (VGS VT)2 = K (VDD VSS VT)2
e=
47.
As, Vss I D
It means as value of Vss increases then the value of
ID decreases and vice versa
0.4
P{X = 1/Y = 0} =
P{Y = 0 / X = 1} =
6/7
Z2
1
1
( Z )( Z )
2
3
1
....(1)
2e
where e = Damping ratio
Quality factor (Q) in RLC circuit given by
ro = 20 kW
(b)
Z2
5
1
Z2 Z +
6
6
Q=
43.
Z 2
5
1 Z 1 +
6
6
1
1
and
3
2
(c) Quality factor(Q) given by
20
ro =
1
t = RC = = 0.5
2
42.
Y (Z )
=
Z (Z )
2015-13
P{Y = 0 / X = 1}P{ X = 1}
P{Y = 0}
1
7
Y
O
48.
250
250 (1+ d )W
E
250 (1-d )W
100W
V0
250 (1- d )W
F
+
D
100W
1V
+ A
B
50W
1/7
1/7
1
6/7
6
1 2
P{Y = 0} = 0.2 + 0.8 =
7
7 7
1
(0.8)
P{Y = 1/ Y = 0} = 7
= 0.4
2
7
VA = 1V
VA = VB = 1 V
Since, no current will flow in the Op-Amp
1
A
50
Sum of resistance in DEC branch = Sum of resistance
1
in DFC branch. So, total current
will equally
50
1 1
1
divide in branch DEC and DFC i.e. =
2 50 100
2015 -14
1
A
100
V0 = VF VE = VFD VED
= (VF VD) (VE VD)
IDEC = IDFC =
(1)
Rth =
1
VFD = 250 (1 + d)
100
=
100
100
100
51. 350
x(t) = m(t). cos(2400pt)
spectrum of x(t)
X(f)
1 (24p)2
ax = 7.53 a x
2 120p
Pavg . d s
x+y=1
2
P = 7.53 ax .
ax
7.53
2
dy dz =
1200+w
1 + cos 4800 pt
= 10 m(t) cos (2400 pt) + m2(t)
dy dz
7.53
1200w 1200
ax + a y
2 2 45
2 = 1.67W
2 + 1+ j
1 E02
ax
2 h
Power (P) =
; Rth = 2 45
2W
Pmax = I 2 RL =
500 d
= 5d = 5 0.05 = 0.25V
100
V0 = 0.25 103 mV = 250 mV
53.33
Given, E(x, t) = ay24p cos(wt k0x)
2 2 45
V0 =
49.
490
|Rth| = RL =
1
VED = 250 (1 d)
100
Putting value of VFD & VED in eqn (1)
V0 =
2 j2
4j
=
2 + j 2 2 245
Rth = 2 || j 2 =
m2 (t ) m 2 (t )
+
cos(4800pt )
2
2
10 10 10 2 10 2
1.67
I
j2W
4 0 ~
RL
2W
52. (c)
2W
j2
Rth
2W < 700
2400 2W > 1700
W < 350
50.
m
= 25 m = 25a = 25 0.08 = 2
a
n
= 30.3 n = 30.3 b = 30.3 0.033 = 1
b
m = 2, n = 1
Since Hz means TE mode, then TE21 mode because
m = 2 & n = 1.
54.
58.
(X + Y+ Z) (X + Y + Z) ( X + Y + Z ) ( X + Y + Z )
q.D p . rn0 (e
v/ v
B
(with 20ns delay)
- 1)
Lp
t = 20 n sec
AB
(without delay)
60 10 -3
f ( x ) = ( x 2 + x + 1)e x
1
Z = (AB C)
(without delay)
0.6 1.0756
0.8 1.0963
Z = (AB C)
(20 n sec delay)
1.0 1.1036
1.2 1.0963
1.4 1.075
1.6 1.041
1.8 0.998
59.
z 4 + 0.25
z 4 (1 + 0.25 z 4 )
t = 20 n sec t = 60 n sec
1
VR + VO
VR2 + VO
VR1 + VO
5
7.25 + 0.75 2
=
=
C2
1.25 + 0.75 1
C2 = 2.5 pF
z4
= (1 + 0.25 z 4 ) 1
57.
C1
=
C2
z4
t = 40 n sec
Cj
2
0.947
So, only (b) option is possible.
z4
t = 40 n sec
0.2 1.015
0.4 1.0457
H ( z) =
t = 20 n sec
AB
(20 n sec delay)
(X-OR-ing)
(b)
(c)
t>0
B
(with 0 delay)
= 28.617 A/cm2
x
0
t=0
28.617
Using formula
56.
t<0
p =
55.
40
2015-15
60.
83.52
VT at 50 C
T
VT =
11600
T = 273 + 50 = 323 k
323
= 27.84
VT =
11600
VBE
VT
IC = I S e
Here, VE = 0
2015 -16
VB
VT
I1
=
I2
V2
27.84
e
V2
20 = e
80
; 4
V1 V2
27.84
K1
( s + 8)( s 2 9)
K (1 + j 2 + 4)
a + jb = jw m0 e0 [1 j 2]
= j w m0 e 0 + 2w m0 e0
3 108
For, z = 10 cm
We have, E3 = 10 e10
= 10e4.6 = 0.1 V/m
= 46.07
K (3 + j 2)
= 1
(7 + j 2) (4 j 12)
K 9+ 4
=1
K 13
=1
53 160
K = 25.54
64. (d) The given Op-Amp circuit is Wein bridge Oscillator
circuit.
Operating frequency of Wein bridges oscillator is
given as
w=
102 46.07
R1 R2 C1C2
Here, R1 = R, C1 = 2C
R2 = 2R, C2 = C
K1 1
1
R 2 R 2C C 2 RC
Condition For Sustain Oscillation
w=
RF
3
Ri
Here RF = R1
Ri = R2
K1 1
=0
1 + Kp +
s s ( s + 2)
=0
s2(s + 2) + sKp + K1 = 0
s3 + 2s2 + sKp + K1 = 0
= 1
K (3 + j 2)
= 1
(7 + j 2) (1 4 4 j 9)
49 + 4 16 + 144
a + jb = j w m0 e0 mr e r
2 2 p 1.1 109
= 1
(1 + j 2 + 8)[(1 + j 2) 2 9]
jwm(s + jwe)
a = 2w m 0 e 0 =
K1
K
; Kp > 1 > 0
2
2
K ( s + 4)
Medium 2
Dielectric
mr = 1 j2
er = 1 j2
h2 = 120 pW
g = a + jb =
s 2 ( s + 2)
63. 25.54
For any point lies on the root locus must satisfy the
condition as.
1 + G(s) or H(s) = 0
or, G(s) H(s) = 1
E1 = 10 V/m
Since,
h1 = h2
So, E1 = E2 = 10 V/m
E3 Electric field in the dielectric after travelling
10 cm
E3 = E2 eyz
( sK p + K1 )
2 K p - K1
Kp >
0.1
1+
K1
V
V1
2
27.84 27.84
=e
Medium 1
Air
h1 = 120pW
62.
s2
V1 V2
= 3 V0 = 83.52mV (Since, V = V V )
0
1
2
27.84
61.
Kp
s1
I1 = I s e 27.84 ; I 2 = I s e 27.84
V1
27.84
e
s3 1
R
R1
3 ; 1 = 4 ; R1 = 4R2
R2
R2
65. (b)