eo 2R| Rectifier PD-9.352F IRF9630 HEXFET® Power MOSFET © Dynamic dv/dt Rating © Repetitive Avalanche Rated * P-Channel © Fast Switching © Ease of Paralleling © Simple Drive Requirements Description Third Generation HEXFETs from Intemational Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-tesistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Vpss = -200V Rog(on) = 0.802 Ip = -6.5A DATA SHEETS Parameter lo@ Te = 25°C _| Continuous Drain Current, Vas @ -10 V. 100°C _| Continuous Drain Current, Vas @ -10 V | Pulsed Drain Current © | Power Dissipation | Linear Derating Factor Ves______| Gate-to-Source Volta Eas Single Pulse Avalanche Energy @ lan ‘Avalanche Current © 64 A Eas Repetitive Avalanche Energy 74 md via Peak Diode Recovery dvidt @ | “5.0 Vins Operating Junction and 1 “55 to +150 Storage Temperature Range | °c Soldering Temperature, for 10 seconds Mounting Torque, 6-32 or M3 s Thermal Resistance 300 (1.6mm from case) 10 bain (1.1 Nem) Parameter | Min. Typ. | Max. Units: Junction-to-Case_ pad a | 17 Recs Case-to-Sink, Flat, Greased Surface [= 0.50 = ow Ra Junetion-to-Ambient eee See eee ee.IRF9630 Electrical Characteristics @ Ty = 25°C (unless otherwise specified) IGR Parameter Min. | Typ__| Max. | Units Test Conditions Vienoss | Drair-to-Source Breakdown Volage | -200| — | — | V_| Vass0V, lo=250uA ‘AVionypss/ATy Breakdown Voltage Temp. Coefficient_ | — | -0.24| — | VIC | Reference to 25°C, In=-ImA Rosin Static Drain-to-Source On-Resistance_| — | — [080] 2 |Vas=-10V, In=-3.9A @ Vasey Gale Threshold Voltage 2.0 | = [40 | V_|VosVos, lo=-2508 [gy [Forward Transconductance | 28 | — | — | s loss Drain-to-Source Leakage Current SY a Te ay TEST rae (Gale-10-Source Forward Leakage: = [= T1009, |Wes=20¥ Gate-to-Source Reverse Leakage == Tio Vas=20V Total Gate Charge —[— 1/29 5A Gale-to-Source Charge — =] 84] nC Voe-t60v Gate-to-Drain (‘Miller’) Charge = [=Ts Vas=-10V See Fig. 6 and 13 Trion Tum-On Delay Time =e Voo=100V t Rise Time =la7t=) ton) Tum-Off Delay Time = | 28 [= t Fall Time — [a4 T Ro=15Q_ See Figure 10 Lo Intemal Drain Inductance —|as}— cane ans nH from package = } bs Intemal Source Inductance — | 75] = |e comier of die contact Ca. Taput Capactance = | 700 | — Ves=0V Coss ‘Ouiput Capacitance = 700 |] PF | vos=-25v Cos Reverse Transfer Capacitance = [4 [— f=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter | Min. | Typ. | Max. | Units Test Conditions fis Continuous Source Current ere eee ea MOSFET symbol ° (Body Diode) | ‘A | Showing the 4 Isat Pulsed Source Current ecto integral reverse an (Body Diode) © pn junction diode. is Veo, Diode Forward Voltage = [= [85 TV [11-28°C, 1o=-6.5A, Vos“ © t Reverse Recovery Time — [200 [00 [ns _[Ts=28°C, 1e=-6.5A ‘On Reverse Recovery Charge — [19 | 29 | uc |aidt=100Aus © oe ae Trtnsic turron ime is noglogble (urn-on ie dominated by Leva) 3; Pulse width limited by Isos-6.5A, didts120A/us, VoosVer)oss, ‘max. junction temperature (See Figure 11) Tus150°C. ® Vop=-50V, starting Ty=25°C, L=t7mH Pulse width < 300 ys; duty cycle <2%. Ro=250, las=-6.5A (See Figure 12)-Ip, Drain Current (Amps) -Ip, Drain Current (Amps) 10! pores 32 3 109 20us PULSE WIDTH| 7 Tc = 25% ot 18 ‘ot -Vpg, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characieristics, To=25°C ‘of 10 ps = -50V 20us PULSE WIDTH| ACPA eee eae -Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics Ip, Drain Current (Amps) (Normalized) a Apion), Drain-to-Source On Resistance 373 IRF9630 j20us PULSE WIDTH ig = 150% wt 1 108 -Vps, Drain-to-Source Voltage (volts) wt Fig 2. Typical Output Characteristics, To=150°C 3.0 2s os | ves = —10V 0.0 “ap 40-200 20 40 60 A) 100 Tad $40 160 Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature DATA SHEETS.IRF9630 TOR) $2007 ——Teg = Ov, = ti 20 eyes Sys + Coq. Cys SHORTED z ip = -8.54 000 rss * Cd SF Poss " Cas * bees 2 Ca] —4 7 S 2 re g SI g 5 4 q B “oot 2 °° £ eau 7 % Pers | So a Yea CORTE 7 ii LI Ste FIGURE 13 a a Fe -Vpg, Drain-to-Source Voltage (volts) Qg, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs. Drain-to-Source Voltage Gate-io-Source Voltage 10° spf orenaTION IN THIS AREA LIMITED BY Figs con) & Drain Current (Amps) Isp, Reverse Drain Current (Amps) T9258C 2 Teas0e ‘a Ves = ov a stvae ruse 05 75 25 35 4.5 Ree ea -Vgp, Source-to-Drain Voltage (volts) -Vps, Drain-to-Source Voltage (volts) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area Forward Voltage ovTOR, IRF9630 Vb pur. 7.0 x. 44> Pu $:Vo0 80 > ov i oF Puke Wah ss I Culver <= + Be Fig 10a. Switching Time Test Circuit 3 g° “aon ‘aon § Cormerocrery get eee 7 j 10% Lo 4 os 50 1% 100 125 150 90%. Te, Case Temperature (°C) Vos Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms Case Temperature i LT ata Theta Fesoce ss Whe ration eee 2. PEAK Ty=Poy X Zenje + Te Thermal Response (Zac) 2 0) 104] 10) 107) 0.8 1 10 tr, Rectangular Pulse Duration (seconds) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-CaseIRF9630 TOR, Vary to obtain VS) required ing our. 200 ny nop =e Yoo 00} jeorTow -8 54 300] cota 500 200 Fvoo = -50v Sst o bee Von = 0 7 00 tes a0 Starting Ty, Junction Temperature(°C) Fig 12a. Unclamped Inductive Test Circuit las Eas, Single Pulse Energy (mJ) Vos. Vierjoss, Fig 12c. Maximum Avalanche Energy Fig 12b. Unclamped Inductive Waveforms Vs. Drain Current Curent Regulator Tanie Type as D.UT. (at 2a ae * Ocs Qe | ves ml Vel oma TL es peered con Samp fers Fig 13a. Basic Gate Charge Waveform Fig 13b, Gate Charge Test Circuit Appendix A: Figure 14, Peak Diode Recovery dv/dt Test Circuit - See page 1506 Appendix B: Package Outline Mechanical Drawing - See page 1509 ‘Appendix C: Part Marking information — See page 1516 International Appendix E: Optional Leadforms — See page 1525 Ter] Rectifier