3469674 FAIRCHILD SEMICONDUCTOR gy eBsuesu74 on2z9a9 2 ——— Ee N2 = 2N18/2N20 Remon conpeny N-Channel Power MOSFETs, 3.5 A, 150-200 V Power And’ Disco Ovison Description 70-2208 {Tove dovces are mchannel, enhancement made, MOSFETs designed eepecally Tor igh speed apgieatons Such as antching power supotes, converters, AG and OC motor contol, relay end solonoi divers and other pulse ‘costa * Low Poston fs sted at $20 V = 1 llean Gate for Fast Switching Sf ‘Toes: Vonon: Specified at Elevated Temperate sneer ‘g Rugged IRF612 cae a oe aes wie | nome | tag ome| coment a Ts [oan dae ea s = a : tear eos a" = a me 7 IRF610/611 | _ MTP2NT8/20 IRFE12/613. onus : 7 = a eo a eral Garcia Easees Fag al Rosen = = 7 = Po Total Power Dissipstion 2 cy 2 w2469674 FAIRCHILD SEMICONDUCTOR gy neff aubhurs ooz7av0 3 IRF610-613 MTP2N18/2N20 T-34-O% ‘Symbol ‘Characteristic ‘otherwise noted) Test Conditions Off Characteristics: 7 Vamos [Oran Sac Brdiwn Val TI Weare oom iareireiarPonzo =m wreanie rreiei8 1 = Tess | Zoro Gate Votage Drain Curont 20 TA | Vog= Rated Voss, Ves =o V Too0 | on [Vos =08 Rated Vs Wrote aes loss ‘Gate-Body Leakage Current = #500 aA | Vos= #20 V, Vos=0 V ‘charactors Vesa) | at Tron Vatoge v iarioets zo [20 lo 250 wh, Von =Vos 20 [a8 loot mA Vou Ves Pea @ [Wen t0¥, bias A rareove we were 24 brton verranez0 i Vosma | Orsi Source Onivoragse oa Yes! uTPeNie/2Nzo - oe Forward Transconduetance [oa Dynamic Characteristics = Car | ho coerce Cas | Capt Cornines Cr Rove Tal Copacinia Switching Characteristics (Tg = 25°C, pues 11,127 ‘won | Tum-On Delay Tine Fle Tene ‘wom __| Tue-OH Delay Tne u Fall Tine 1 [oe (0, | Total Gato Charge “a5 [9c 26a Vos 10 V. Roan = 80 2 Fes = 50 Ves= 10 V. y=30 A Veo = 48 V2400874 FAIRCHILD SEMICONDUCTOR ve fJavuqK74 onezan 5 I IRF610-613 MTP2N18/2N20 J- 34.0% Eleotrical Characteristics (Cont) (To ~ 25°C unless otherwise noted) ‘Symbet ‘haratera We Ua "Feat Gonaiions Seurce-braln Diode Characteristics Veo | Diode Forward Vatage rT IReeto7614 zo |v 5 A Vag" 0 ¥ 1RF612/613 18 |W] 's=20.A Vag=0 V Te | Reverse Recover Tine “0 ne | e25 A dle 28 AS ‘Typleal Performance Curves Figure 2 ‘Stale Drain to Source Resistance re pt Cin waarne 3 1 | dene 3 ey a ii 5 i. uf fled i Tot TT (eee COPE —_—_—_—$—————————3469674 FAIRCHILD SEMIcONOUCTOR 84 eff a¥LaE74 ooZ7qNe 7 ff IRF6 10-613 MTP2N18/2N20 T. 39.04 ‘Typical Performance Curves (Cont) Figure 5 Capacitance vs Drain to Source Ve Figure 7 Forward Biased Sate Operating Area for WTP2N18/2N20 Figure 6 Gate to Source Voltage vs Total Gate Charge Figure 8 Transit Thormal Resistance ve Time for wTPaNte72N20 erst peeetgegtee Saiby a rane Seas es om A3469674 FAIRCHILD SEMICONDUCTOR 84 i IRF610-613 mTP2Nie/2N20 | 39-27 ‘ypieal Elects Characteristics Figure 11 Salcing Tet Creat gure 12 Sutching Waveorms ie a _ won] i 7 \ | = = t | sana | TN : Pek [Ae a 2.166 Pore