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Lecture Outline:
Electrical Properties
ISSUES TO ADDRESS...
How are electrical conductance and resistance
characterized?
What are the physical phenomena that distinguish
conductors, semiconductors, and insulators?
For metals, how is conductivity affected by imperfections,
temperature, and deformation?
For semiconductors, how is conductivity affected by
impurities (doping) and temperature?
(d)
(d)
(a)
Si
(doped)
45 m
0.5 mm
(b)
(c)
Electrical Conduction
V=IR
Ohm's Law:
resistance (Ohms)
voltage drop (volts = J/C)
C = Coulomb
current (amps = C/s)
Resistivity, r:
A material property that is
independent of sample size
and geometry
Conductivity, s:
RA
surface area
of current flow
current flow
path length
Electrical Properties
2D
D
2
D2
l
l
R1
R2
2
2
8
2D D
2
Definitions
Further definitions
J=
J current density
current
I
surface area A
like a flux
conductivity
voltage gradient
Conductivity: Comparison
Room temperature values (Ohm-m)-1 = ( METALS
-1
m)
conductors
CERAMICS
Silver
6.8 x 10
Soda-lime glass 10
Copper
6.0 x 10
Concrete
Iron
1.0 x 10
Aluminum oxide
SEMICONDUCTORS
10
-9
<10
-13
<10
-14
POLYMERS
Silicon
4 x 10 -4
Germanium
2 x 10
GaAs
-10-10 -11
Polystyrene
Polyethylene
10
-15-10 -17
10 -6
semiconductors
insulators
Selected values from Tables 18.1, 18.3, and 18.4, Callister & Rethwisch 8e.
8
I = 2.5 A
Cu wire -
100 m
D 2
4
l
V
A I
< 1.5 V
2.5 A
6.07 x 107 (Ohm-m)-1
11
filled
band
filled states
partly
filled
band
filled states
2 types of band
structures for
metals
1) Partially filled band
empty
band
GAP
filled
band
filled
band
12
filled states
GAP
filled
valence
band
filled
band
empty
across band gapconduction
band
?
GAP
filled states
Insulators:
filled
valence
band
filled
band
13
14
Electron Mobility
Frictional force from scattering of electron by
imperfections in the crystal lattice, including
impurity atoms, vacancies, interstitial atoms,
dislocations, even the thermal vibration of the
atoms themselves.
The scattering phenomena is manifested as a
resistance to the passage of an electric
current. Several parameters are used to
describe the extent of this scattering; these
include the drift velocity, vd and the mobility, e
of an electron.
15
(10 -8 Ohm-m)
Resistivity,
e
r
1
= thermal
Pu
-200
-100
T (C)
Adapted from Fig. 18.8, Callister & Rethwisch 8e. (Fig. 18.8 adapted from J.O. Linde, Ann.
Physik 5, p. 219 (1932); and C.A. Wert and R.M. Thomson, Physics of Solids, 2nd ed.,
McGraw-Hill Book Company, New York, 1970.)
+ impurity
+ deformation
16
Cont
Which t, i, d represent the individual thermal, impurity and deformation
Influence of Impurity
The impurity resistivity I is related to the impurity concentration ci
Influence of Deformation
17
Estimating Conductivity
180
160
140
125
120
100
21 wt% Ni
80
60
0 10 20 30 40 50
Resistivity,
(10 -8 Ohm-m)
Question:
-- Estimate the electrical conductivity of a Cu-Ni alloy
that has a yield strength of 125 MPa.
50
40
30
20
10
0
0 10 20 30 40 50
From step 1:
CNi = 21 wt% Ni
30 x 10 8 Ohm m
1
3.3 x 10 6 (Ohm m) 1
18
Concept check
Hint: you may want to consult the lead-tin phase diagram, Figure 9.8
19
Intrinsic Semiconductors
Compound semiconductors
III-V compounds
Ex: GaAs & InSb
II-VI compounds
Ex: CdS & ZnTe
The wider the electronegativity difference
between the elements the wider the energy
gap.
21
electron hole
pair creation
Si atom
No applied
electric field
E
electron hole
pair migration
+ -
Applied
electric field
Applied
electric field
n e e p e h
hole
# electrons/m3 electron mobilitymobility
22
= ni|e|(e + h)
Ex: GaAs
10 6 ( m) 1
ni
23
Intrinsic Semiconductors:
Conductivity vs T
Data for Pure Silicon:
-- s increases with T
-- opposite to metals
ni e e h
E gap / kT
ni e
Material
Si
Ge
GaP
CdS
24
n e e
4+ 5+ 4+ 4+
4+ 4+ 4+ 4+
no applied
electric field
Boron atom
hole
conduction
electron
4+ 4+ 4+ 4+
valence
electron
4+ 4+ 4+ 4+
Si atom
4+ 3+ 4+ 4+
no applied
electric field
p e h
25
Concept check:
Will Zn act as a donor or acceptor when
added to the compound semiconductor
GaAs? Why? (Assume that Zn is a
subtitutional impurity)
Extrinsic Semiconductors:
Conductivity vs. Temperature
to
excite electrons.
-- For 150 K < T < 450 K:
"extrinsic"
undoped
extrinsic
intrinsic
3
freeze-out
concentration (1021/m3)
extrinsic conduction...
-- Extrinsic doping level:
1021/m3 of a n-type donor
impurity (such as P).
-- For T < 100 K: "freeze-out,
thermal energy insufficient
doped
Conduction electron
0
0
200
400
600
T (K)
-- No applied potential:
no net current flow.
-- Forward bias: carriers
flow through p-type and
n-type regions; holes and
electrons recombine at
p-n junction; current flows.
-- Reverse bias: carriers
flow away from p-n junction;
junction region depleted of
carriers; little current flow.
p-type
+
-n-type
-
+ + +
+ -
+ p-type
+
+
+
+
Adapted from
Fig. 18.21
Callister &
Rethwisch 8e.
n-type
-
n-type
-
28
29
Junction Transistor
MOSFET Transistor
Integrated Circuit Device
Ferroelectric Ceramics
32
Piezoelectric Materials
Piezoelectricity
application of stress induces voltage
application of voltage induces dimensional
change
stress-free
Adapted from Fig. 18.36, Callister & Rethwisch 8e. (Fig. 18.36 from Van Vlack, Lawrence H., Elements of Materials Science and Engineering,
1989, p.482, Adapted by permission of Pearson Education, Inc., Upper Saddle River, New Jersey.)
33
Summary
Electrical conductivity and resistivity are:
-- material parameters
-- geometry independent
Conductors, semiconductors, and insulators...
-- differ in range of conductivity values
-- differ in availability of electron excitation states
For metals, resistivity is increased by
-- increasing temperature
-- addition of imperfections
-- plastic deformation
For pure semiconductors, conductivity is increased by
-- increasing temperature
-- doping [e.g., adding B to Si (p-type) or P to Si (ntype)]
Other electrical characteristics
-- ferroelectricity
-- piezoelectricity
34
Summary
Diffusion FASTER for...
open crystal
structures
close-packed
structures
materials
w/secondary
bonding
materials w/covalent
bonding
larger diffusing atoms
smaller diffusing
atoms
lower density
materials
higher density
materials
35
Mechanical Properties
ISSUES TO ADDRESS...
Stress and strain: What are they and why are
they used instead of load and deformation?
Elastic behavior: When loads are small, how much
deformation occurs? What materials deform least?
Plastic behavior: At what point does
permanent
deformation occur? What materials are
most
resistant to permanent deformation?
Callister et al., Chapter 6, page 150
* Callister et al., Chapter 12, page 480
36
Elastic Deformation
1. Initial
2. Small load
3. Unload
bonds
stretch
return to
initial
Linearelastic
Non-Linearelastic
37
Engineering Stress
Tensile stress, s:
Ft
Shear stress, t:
Ft
Area, Ao
Area, Ao
Instantaneou
s load
Ft
Ft
lb
N
= 2f or
=
2
in
m
Ao
original area
before loading
F
Fs
Fs
F
s
=
Ao
Ft
Stress has
units:
N/m2 or lbf /in2
38
Ao
Ao
Note: compressive
structure member
( < 0 here).
39
Engineering Strain
Tensile strain:
Lo
Shear strain:
wo
L
= x/y = tan
90 -
90
Lo
L
L
wo
/2
Lateral strain:
/2
Strain is always
dimensionless.
Adapted from Fig. 6.1(a) and (c), Callister & Rethwisch 8e.
40
Strain,
=E
F
E
stress
Linearelastic
simple
tension
test
41
Example 1:
A piece of copper originally 305 mm long is
pulled in tension with a stress of 276 MPa.
If the deformation is entirely elastic, what
will be the resultant elongation
=E
Poisson's ratio,
L
Poisson's ratio, n:
L
metals: n ~ 0.33
ceramics: n ~ 0.25
polymers: n ~ 0.40
Units:
E: [GPa] or
[psi]
n:
dimensionless
Mechanical Properties
Example 2:
A tensile stress is to be applied along the long
axis of a cylindrical brass rod that has a
diameter of 10 mm. determine the magnitude
of the load required to produce a 2.5 x 10-3 mm
change in diameter if the deformation is
entirely elastic
Summary
Stress and strain: These are size-independent
measures of load and displacement, respectively.
Elastic behavior: This reversible behavior often
shows a linear relation between stress and strain.
To minimize deformation, select a material with a
large elastic modulus (E or G).
Plastic behavior: This permanent deformation
behavior occurs when the tensile (or
compressive)
uniaxial stress
s y.
Toughness:
The reaches
energy needed
to break a unit
volume of material.
Ductility: The plastic strain at
failure.
46