You are on page 1of 2

1. Draw the circuit for NMOS Inverter and explain its operation.

[16]

2. Explain the processing steps in fabrication of nmos technology with neat

sketches.

3. Explain any one method of encapsulation of IC.

4. (a) Explain about the effect of scaling on MOSFET parameters.

i. Gate Area

ii. Gate capacitance

iii. Channel Resistance

iv. Transistor Delay

5. Explain about Design Rules for contact cuts.

6. Draw the circuit and layout schematic for 2-input NOR gate giving explana-

tion.

7. What are the various limitations of scaling? [8+8]

8. Draw the circuit for CMOS inverter and explain the transfer characteristic
using

necessary equations, and the different regions in the characteristic.

9. With the help of sketches explain the principles of different types of diffusion

Processes.

10. Explain about Fick's laws of di_usion.

11. Explain the concept of sheet resistance and sheet capacitance. Give
examples.

12. What are the design issues involved in long interconnect wires? Explain.

13. Explain the processing steps in fabrication of PMOS technology with neat

sketches.

14. What are the additional two layers in BICMOS technology compared to other.

[10+6]

15. Explain about stick diagram.

16. Explain about scaling. [8+8]

17. Draw the circuit of CMOS Inverter and explain its operation.
18. What are the various pull up transistor used for inverters? [8+8]

19. What are the issues involved in driving large capacitive loads in VLSI circuits?

Explain.

20. Derive the expression for T SD in the case of a MOSFET.

21. Draw the circuits for n-MOS, p-MOS and C-MOS Inverter and explain about
their

operation and compare them.

22. What are the di_erent types of oxidation processes? Explain.

23. With the help of neat sketches, explain the steps involved in
photolithography

and

24. Why scaling is required?

25. How does Depletion Regions around Source and Drain are affected due to

scaling down of device dimensions? Explain.pattern transfer.

26. Explain about the Electrical characteristics of MOSFET devices.

27. Explain in detail about the BICMOS process.

28. Compare Bipolar and CMOS processes.

29. Explain the terms Inverter delays, propagation delays, and wiring
capacitance.

30. Give the notations used in stuck diagram for CMOS inverter, giving
explanation.

31. Draw the sketch and explain about the Twin-Tub process for CMOS fabrication.

32. Write short notes on any TWO of the following:


(i) IC packaging Techniques
(ii) Ion-Implantation
(iii) VLSI design flow.

You might also like