1 2 3 4 5 7 8 9 10 12 14 15 16 18 19 21 22 29 30 32 33 34 35 36 37 38

INPUTDATA: Current Rating Required Nominal voltage Min. continuous operating voltage Frequency Altitude Fault level Fault Duration Ambient Temp. Final Temp Temp. Permissible final temp. at the end of fault Type of panel Installation Panel Busbar Enclosure Height (H) Panel Busbar Enclosure Depth (D) Busbar Material Grade of busbar No. of busbar run / phase Busbar Si B b Size All Busbars Are Busbar Insulating Material used Busbar spacing (refer figure) Distance between two busbar Total busbar width (refer figure) Total busbar height (refer figure) Busbar support interval Busbar length Minimum Shearing strength of Aluminium is

A V Vn f Alti Isc

Amp. Volt % of Nominal

Hz Mtr. Mt
kA Sec. C C C C

tf
Ta Tf Tend

H D BBmat BBgrade N BBsize

mm mm

Nos. mm

S Sb at bt Ssupport Lbd

mm mm mm mm mm Mtr. kg/ cm2

3200 415 95 50 100 50 1 40 85 185 Indoor with Well Ventilated 500 1000 Aluminium D 50 S-WP 2 203.2 X 12.7 Without Interleaving PVC Sleeves 200 9.53 28.59 203.2 600 4.6 1500

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aS

D at Sb A

b=bt

Minimumsizeofbusbarforshortcircuitconditions

A Isc

k (1 20 )t t *100 100

A=arearequiredinsq.mm. Isc=faultcurrentinAmp.(rms) k=constant,1.166forAl./Alalloy,0.52forCu. k = constant, 1.166 for Al./Al alloy, 0.52 for Cu. 20=Temp.coefficientofresi.At20deg.Cen. t=faultclearingtimeinsec. t=temp.riseofbusduringfaultindeg.Cen =operatingtempofbusbarindeg.Cen A= A B Deratingfactors A1 Deratingfactorduetoambienttemp. A2 deratingduetoaltitude A3 Deratingfactorduetogradeofaluminium Ratioofenclosureareatobusbararea A3 Deratingfactorduetosizeofenclosure K1 K2 K3 K4 0.945 1 1 0.03612896 0.8 (Table28.3) (Table30.6) (Table28.6) sq.mm. 625.6 625 6

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A4 Deratingduetoskineffectisconsideredinampacity g p y SpacingRatio A5 Deratingduetoproximityeffect(consideredabove) A6 Deratingduetoblackpaint A7 Deratingduetofrequencyvariation Overallderatingfactor Actualcurrentcarryingcapacity Currentdensity C Voltagedropcalculation Rdcat20degcen Rdcatoperatingtemp./perconductor

K5 S/at K6 K7 K8

1 7.0 0.99 1 1 0.75 Amp Amp/sq.mm.

(Table7,T&R)

3331

0.645
11.12

Rdc20

microOhm/mtr

Rdc Rdc 20 {1 20 (T f 20)}

Rac micro Ohm/kM/phase =RdcxKskin 0.0000115

y Proximityeffect Voltagedropforbusduct Vd Vd Vd' Volts % Volts V lt Volts =CurrentxImpedanceofb/bxlengthofb/b 1.60

0.4%
=CurrentxRacofb/bxlengthofb/b C t R f b/b l th f b/b 0.000177347

Middlephasevoltagedrop Middl h lt d

Calculationforshortcircuiteffects

Fm

16* Isc 2 * k *104 N / mtr. S

Where,

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Fm=electrodynamicforces y Isc=rmsvalueoffaultcurrentinampere k=spacefactorforrectangularbusbar forceoneachbusbarsection,insulatorm,fastners F Mechanicalsuitabilityofbusbar Mechanical suitability of busbar

kg

1077.7

Bendingstressat sec tionx x

Fm * S supp ort 12* M * N

x b

Where, Wh Fm=electrodynamicforces Ssupport=CtoCdistancebetweentwobusbar M=sectionmodulusofeachb/batsectionxx 1/6ab =1/6ab2cm3 N=No.ofbusbarperphace Bendingstressonthebusbaratthetimeoffaultis

G TEMPERATURE RISE AT THE TIME OF FAULT

less

thanallowable

final = =

[Antilog[ 3.41x10^4xA
40.3574

IscXSqrt(t)

](

initial

+233)

233

final =

0.36

Deg. Cen. Temp. Rise

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