FRAM-Ferroelectric RAM

FRAM® is nonvolatile and writes fast!

Ferroelectric memory, FRAM (Ferroelectric RAM) is a non-volatile memory offering

high-speed writing, low power consumption and long rewriting endurance. It reduces the
burden of OEM development because there is no need to differentiate between RAM and
ROM. Furthermore, because no batteries are needed, the use of FRAM has benefits for
manufacturing, maintenance and the environment. Fujitsu FRAM products include LSI
devices for standalone memory smart cards and RFID. We also respond flexibly to
customer requirements by creating custom LSI.

Fujitsu has to date (December 2005) delivered more than 300 million FRAM devices. We
lead the world in developing and manufacturing FRAM.

Definition of: FeRAM

(FerroelectricRAM) A non-volatile memory technology that uses a ferroelectric capacitor

to store a binary state (0 or 1) as two voltages. It uses one or two transistors to read and
write the capacitor. FeRAM was designed to replace flash memory because it writes
faster and uses less power. It can also be more easily integrated with other circuits on a
semiconductor chip than flash. See ferroelectric capacitor.