intemational ae zeR] Rectifier IRF540 HEXFET® Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated 175°C Operating Temperature Fast Switching Ease of Paralleling Rpg(on) = 9.0772 Simple Drive Requirements Voss = 100V Ip = 284 Description Third Generation HEXFETs from Intemational Rectiior provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commerciatindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings Parameter | Max. Units lo@ Tc=25°C__| Continuous Drain Current, Vas @ 10 | 28 lo @ Te 00°C _| Continuous Drain Current, Vas @ 10 V { 20 A tow [Pulsed Drain Current © _ { 110 Pp @ Te = 25°C _| Power Dissipation Linear Derating Factor Ves Gatte-to-Source Voltage Eas Single Pulse Avalanche Energy @ lan _____ [Avalanche Current © : Ean Repetitive ‘Avalanche Energy D 16 dviat Peak Diode Recovery dvidt © 55 Ts Operating Junction and “$5 to +175 Tsra, Storage Temperature Range ‘Soldering Temperature, for 10 seconds 300 (1.6mm from case) ‘Mounting Torque, 6-32 or M3 serew 10 Toten (1.4 Nem) Thermal Resistance Parameter Min, auc Junction-to-Case = Recs Case-to-Sink, Flat, Greased Surlace = Pasa Junction-to-Ambient = 49IRF540 TGR Electrical Characteristics @ Ty = 25°C (unless otherwise specified) Parameter Min_ | Typ. | Max. | Units Test Conditions Visrjoss___| Drain-to-Souree Breakdown Vollage | 100 | — | — | V_|Vas-0V, lo= 250uA ‘AVienoss/ATs| Breakdown Vollage Temp. Coafficient_| — | 0.13 | — | VPC | Reference to 25°O, Io= 1mA Frosion) Slatic Drain-to-Source On-Resistance_| — | — [0.077| @ |Ves=10V, l=17A © Vestn (Gate Threshold Vortage 2.0 | — [4.0 | V_ [VoseVas, lo= 25014 Se Forward Transconductance 67 | — | — | S |Vosc50V, lo=17A © : —l|-|]% Vos=100V, Ves=0V loss Drain-to-Source Leakage Current Taso]! Weesov, vescov, Tais0e ie Gate-to-Source Forward Leakage — [= [i005 Gate-to-Source Reverse Leakage = = F100 Op Total Gate Charge = [= T Qos Gate-to-Source Charge = [=a] re ‘Qua Gate-to-Drain ("Miller") Charge —][- |] 2 L |OV See Fig. 6 and 13. © exer) Turn-On Delay Time = Tn T= ‘Voo=50V 1% Rise Time a exo Tumn-Off Delay Time = [3 [= Ro=8.12 tt Fall Time = [a [— Ro=2.90 See Figure 10 bo Internal Drain Inductance —|as]— Fray nH from package bs Internal Source Inductance REE HEE Pipeint Sut Cis Input Capacitance = i700, — Coss Output Capacitance = [560 [| =| pF Cass Reverse Transfer Capacitance — | 120 [| — Jf=1.0MHz See Figure 5 Source-Drain Ratings and Characteristics Parameter ‘Min, | Typ. | Max. | Units ‘Test Conditions Continuous Source Current Gre (eee ioe MOSFET symbol ° (Body Diode) ‘A. | Showing the 4 ton Pulsed Source Current Preece ey integral reverse Wd ("11 (Body Diode) © -n junction diode. is — [25 | V | T25°C, lse28A, Vos-0V © te Reverse Recovery Time = [180 [360 [ns _|7.=25°0, i178 Qn Reverse Recovery Charge = [43 [28 [uc |aict-100As © ton Forward Tum-On Time Tntinsic turn-on ime Is neglogible (turn-on is dominated by Ls#L) Notes: ® Repetitive rating; pulse width limited by © Isp228A, dildt=170A/us, VoosVierp0ss, ‘max, junction temperature (See Figure 11) Tys175°C ® Vpp=25V, starting T=25°C, L=440yH Pulse wiath < 300 js; duty cycle <2%. Ra=250, las=28A (See Figure 12) 160Ip, Drain Current (Amps) Jp, Orain Current (Amps) wt 108 sot Vps, Drain-to-Source Voltage (volts) Fig 1. Typical Output Characteristics, To=25°C Vpg = 50V 20us PULSE WIDTH| | rr rn eee see ee) Ves, Gate-to-Source Voltage (volts) Fig 3. Typical Transfer Characteristics IRF540 ef Ip, Drain Current (Amps) wot 20us PULSE WIOTH To = 175°C 10° sof Vos; Drain-to-Source Voltage (volts) Fig 2. Typical Output Characteristics, To=175°C 3.9 8 ips ae = 2 ast 3 & 6 = 29 os ee Bis QE $5 22 f= 14 5 6 Zoos g eee veg = 100 SGg=aE=T-OEO-AT BOBO TOO TED HAOTED Tee Ty, Junction Temperature (°C) Fig 4. Normalized On-Resistance 18 Vs. Temperature