Full Combine

i
SPUTTERING PRESSURE AND OXYGEN RATIO DEPENDENCE

OF ZINC OXIDE THIN FILMS DEPOSITED ON TEFLON
SUBSTRATE

Thesis presented in partial fulfilment for the award of the
Bachelor of Engineering (Hons) Electronic
Of
UNIVERSITI TEKNOLOGI MARA

MUHAMMAD SANUSI BIN ADNAN
FACULTY OF ELECTRICAL ENGINEERING
40450 SHAH ALAM, SELANGOR DARUL EHSAN
MALAYSIA
JULY 2012
ii

DECLARATION

It is hereby declared that all the material in this report is the result of my own work and
all materials which are not the result of my own work have been clearly acknowledged.
Although, certain result on this thesis is effort from other dispute.

iii

DEDICATION

To my supervisor, thank you so much for all support and guide.
To my father, my mother and sibling, thank you so much for your undying love and
support.
To all my friends, thank you so much for your all support and encouragement.

iv

ACKNOWLEDGEMENT

Bissmillahirrahmanirrahim, in the name of Allah s.w.t, the Most Merciful and the Most
Beneficent.

Alhamdulillah. Thanks to Allah s.w.t. for the strength and blessing throught the
entire time until to complete this Final Year Project which is title Sputtering Pressure
Dependence of Zinc Oxide Thin Films Deposited on Teflon Substrate.
.
Firstly, I would like to express a special gratitude to my supervisor, Dr. Sukreen
Hana Binti Herman for the valuable information, suggestions and guidance in the
compilation and preparation this project.

Acknowledgement is extended to my senior, Pn. Nur Saadah Binti Muhamad
SaukiI for her constant help, support and advice provided to me throughout the study for
the completion and success of this project. Then I would like to take this opportunity to
express my appreciation the laboratory facilities that provided by Faculty of Electrical
Engineering and Institute of Science, Universiti Teknologi MARA, Shah Alam.

Deepest thanks and appreciation to our parents, family, and others for their
cooperation, encouragement, constructive suggestion and full of support for the report
completion, from the beginning till the end. Also thanks to all of our friends and
everyone, those have been contributed by supporting my work and help myself during the
thesis writing till it is fully completed.

Last but not least, we would also like to thank our classmates who have helped us
in prepare this thesis. Their generosity and assistance are greatly appreciated.

v

ABSTRACT

This project studied on the characteristics of the Zinc Oxide (ZnO) thin films
deposited onto polytetrafluoroethylene (teflon) substrate by using radio frequency (RF)
magnetron sputtering technique. The effects of deposition pressure and percentage of
oxygen, O
2
ratio on the structural, optical and electrical properties of ZnO thin film were
investigated. The sputtering pressure was varied from 5, 10, 13, to 15 mTorr and the O
2

ratio 0 %, 10 %, 20 %, and 30 %. The structural, optical, and electrical properties of the
film were investigated by Field Emission Scanning Electron Microscopy (FESEM) and
X-ray Diffraction (XRD) with CuK radiation, JASCO UV-VIS/NIR Spectrophotometer,
and Current Voltage (I-V) Measurement respectively. The surface morphology reveals
that deposited ZnO consists of nanoparticles. The thickness and deposition rates of thin
films were decreased with increasing pressure and O
2
ratio. The crystal structure at 0 %
of O
2
ratio has the highest peak compared to others percentage of oxygen. Also, the thin
films showed the optical transmittance between range 45 % to 85 %. Optical
measurements indicate the existence of band gap allowed optical transition with
corresponding energy gap in the range of 3.28 - 3.34 eV. The deposition of ZnO thin
films at different percentage of O
2
gave more effects compared to the deposited ZnO thin
films as shown in the results observed.

vi

TABLE OF CONTENTS

DECLARATION ii
DEDICATION iii
ACKNOWLEDGEMENT iv
ABSTRACT v
TABLE OF CONTENTS vi
LIST OF FIGURES ix
LIST OF TABLES xi
LIST OF ABBREVIATIONS xii

CHAPTER 1 1
INTRODUCTION 1
1.1 BACKGROUND OF STUDY 1
1.2 PROBLEM STATEMENT 3
1.3 OBJECTIVE 3
1.4 SCOPE OF WORK 3
1.5 ORGANIZATION OF THESIS 4

CHAPTER 2 5
LITERATURE REVIEW 5
2.1 ZINC OXIDE (ZNO) 5
2.2 PROPERTIES OF ZNO 6
2.2.1 Structural and Physical Properties 6
2.2.1.1 Crystal Structure 6
2.2.1.2 Direct and Wide Band Gap 7
2.2.2 Optical Properties 8
2.2.2.1 Large Exciton Binding Energy 8
2.2.2.2 Strong Luminescence 8
2.2.3 Electrical Properties 9
vii

2.2.3.1 Conduction Mechanism 9
2.2.3.2 High Electron Mobility 9
2.3 FLEXIBLE SUBSTRATES 10
2.3.1 Polytetrafluoroethylene (Teflon) Substrate 11
2.4 DEPOSITION OF ZINC OXIDE (ZNO) THIN FILMS 12
2.4.1 Physical Vapor Deposition (PVD) by Sputtering 13
2.4.1.1 Radio Frequency (RF) Magnetron Sputtering 13
2.4.1.2 Sputtering Process 15
2.5 APPLICATION OF ZINC OXIDE (ZNO) THIN FILMS 17

CHAPTER 3 19
METHODOLOGY 19
3.1 OVERVIEW OF WORK 19
3.2 PREPARATION OF CLEANING TEFLON SUBSTRATE 22
3.3 PREPARATION OF ZNO THIN FILMS DEPOSITION 24
3.3.1 ZnO Thin Films Deposition 27
3.4 CHARACTERIZATION OF ZNO THIN FILMS 28
3.4.1 Structural Properties 28
3.4.1.1 Surface Morphology 28
3.4.1.2 Crystal Structure 29
3.4.1.3 Thickness of Thin Films 30
3.4.1.4 Deposition Rate 30
3.4.2.1 Transmittance Spectra 31
3.4.2.2 Optical Energy Band Gap 31
3.4.3.1Metal Contact Deposition 33
3.4.3.2 Current Voltage I-V Characteristics 34
3.4.3.3 Conductivity and Resistivity 34

viii

CHAPTER 4 36
RESULTS AND DISCUSSION 36
4.1 DEPOSITION OF ZNO THIN FILMS AT DIFFERENT SPUTTERING
PRESSURE 36
4.1.1.2 Thickness and Deposition Rate 38
4.1.2.1 Transmittance Spectra 40
4.1.2.2 Optical Energy Band Gap 41
4.1.3.1 Current Voltage (I-V) Characteristics 42
4.2 DEPOSITION OF ZNO THIN FILMS AT DIFFERENT OXYGEN RATIO
(AR:O
2
) 45
4.2.1.2 XRD Patterns 47
4.2.1.3 Thickness and Deposition Rate 48
4.2.2.1 Current Voltage (I-V) Characteristics 50

CHAPTER 5 53
CONCLUSION AND FUTURE RECOMMENDATION 53
5.1 CONCLUSION 53
5.2 FUTURE RECOMMENDATION 54

REFERENCES 55
APPENDIC A DATA FOR IV MEASUREMENT 60
APPENDIC B DATA FOR OPTICAL ENERGY BAND GAP 68
ix

LIST OF FIGURES

Figure 2.1: Stick-and-ball representation of ZnO crystal structures: (a) cubic
rocksalt (B1), (b) cubic zinc blende (B3), and (c) hexagonal
wurtzite (B4). Shaded gray and black spheres denote Zn and O
atoms, respectively.
7
Figure 2.2: Direct band gap semiconductor 7
Figure 2.3: Exciton energy level in direct band gap semiconductor 8
Figure 2.4: Molecular structure of Teflon 12
Figure 2.5: Sputtering process [34] 16
Figure 2.6: PVD system by RF magnetron sputtering [35] 17
Figure 3.1: Flow chart for overall of the project 20
Figure 3.2: Flow chart for scope of work 21
Figure 3.3: (a) Ethanol (b) Acetone and (c) Deionised (DI) water 22
Figure 3.4: Ultrasonic cleaner machine 22
Figure 3.5: Flow chart for cleaning substrate 23
Figure 3.6: Schematic diagram of PVD machine system 25
Figure 3.7: Flow chart of fully auto preparation of ZnO thin films 26
Figure 3.8: (a) FESEM machine with monitoring system (b) Sputter coater
machine
29
Figure 3.9: ZnO thin films configuration during FESEM 29
Figure 3.10: Surface profiler system 30
Figure 3.11: JASCO UV-Vis-NIR Spectrophotometer 31
Figure 3.12: Current-Voltage (I-V) Measurement (Keithley 2400) 33
Figure 3.13: Device configuration of ZnO thin films deposited on Teflon
substrate
33
Figure 3.14: Ulvac VCP-1100 Thermal Evaporator 33
Figure 3.15: (a), (b), (c), and (d) is the distance for length between gold and
gold
34
Figure 3.16: Device configuration of ZnO thin films for I-V measurement 35
x

Figure 4.1 : FESEM images of deposited ZnO thin films at different
substrate pressures (a) 5mTorr (b) 10mTorr (c) 13mTorr and (d)
15mTorr
38
Figure 4.2: Relation between thin films thickness (m) and sputtering
pressure (mTorr)
39
Figure 4.3: Relation between deposition rate (nm/min) and sputtering
pressure (mTorr
39
Figure 4.4: Optical transmittance spectra of ZnO thin films deposited on
Teflons substrate at different sputtering pressure
40
Figure 4.5: Optical energy band gap of ZnO thin films deposited on Teflons
substrate at different sputtering pressure
41
Figure 4.6: Current (A) versus voltage (V) of ZnO thin films deposited on
43
Figure 4.7: Conductivity (1 x 10
-3
Sm
-1
) versus sputtering pressure (mTorr) 44
Figure 4.8: Resistivity (1 x 10
2
m) versus sputtering pressure (mTorr) 44
Figure 4.9: FESEM images of deposited ZnO thin films at different O
2
ratio
(a) 0 %, (b) 10 %, (c) 20 %, and (d) 30 %
47
Figure 4.10: XRD spectra of ZnO films deposited under different O
2
ratio 48
Figure 4.11: Relation between thin films thickness (nm) and O
2
ratio (%) 49
Figure 4.12: Relation between deposition rate (nm/min) and O
2
ratio (%) 49
Teflons substrate at different O
2
ratio
50
-3
Sm
-1
) versus O
2
ratio (%) 51
3
m) versus O
2
ratio (%) 51

xi

LIST OF TABLES

Table 2.1: Differences between Flexible Substrates 11
Table 2.2: Advantages and disadvantages of PVD process 14
Table 3.1: Sputtering conditions during the deposition of ZnO thin films at
sputtering pressure and O
2
ratio
27
Table 3.2: The setting during FESEM measurement 29
Table 4.1: Thin films thickness (m) and deposition rate (nm/min) at
different sputtering pressure
40
Table 4.2: Transmittance (%) and optical energy band gap (eV) at
42
Table 4.3: Conductivity (1 x 10
-3
Sm
-1
), resistivity (1 x 10
2
m) at
44
Table 4.4: FWHM for (002) at different O
2
ratio 48
Table 4.5: Thin films thickness (nm) and deposition rate (nm/min) at
different O
2
ratio (%)
49
-3
Sm
-1
3
m) at
52

xii

LIST OF ABBREVIATIONS

Al : Aluminium
Ar : Argon
Au : Aurum or Gold
CVD : Chemical Vapor Deposition
DC Magnetron Sputtering : Direct Current Magnetron Sputtering
DI Water : Deionised Water
FESEM : Field-Emission Scanning Electron Microscopy
FWHM : Full Width At Half Maximum
GaN : Gallium Nitride
I-V Measurement : Current-Voltage Measurement
LCDs : Liquid Crystal Displays
MBE : Molecular Beam Epitaxy
O
2
: Oxygen
PEN : Polyethylene Naphthalate
PET : Polyethylene Terephthalate
PI : Polyimide
PPC : Poly Propylene Carbonate
PVD : Physical Vapor Deposition
RF magnetron sputtering : Radio Frequency Magnetron Sputtering
SAW : Surface Acoustic Wave Devices
TCO : Transparent Conducting Oxide
Teflon : Polytetrafluoroethylene
TFT : Thin Film Transistor
UV-VIS/NIR Spectrophotometer : Ultra Violet Visible-Near Infrared Spectrophotometer
Wz : Hexagonal Wurtzite
XRD : X-Ray Diffraction
ZnO : Zinc Oxide
ZnS : Zinc Sulfide

1

CHAPTER 1

INTRODUCTION

This chapter describes about the overview of this project. There are five sections
within this chapter. First section is about the background of study for this project. Section
two discusses about the problem statement and followed by the third section which is the
objectives that are related to this project. The scope of work for this project was
explained in the fourth section. Lastly, the organization of thesis is described in the last
section of this chapter.

1.1 BACKGROUND OF STUDY

Zinc oxide (ZnO) is naturally an n-type compound semiconductor with wide
direct band gap (3.37eV) [1, 2] of the II-VI semiconductor group with a hexagonal
wurtzite crystal structure [3]. It has large exciton binding energy (60meV) at room
temperature [2-4] larger compared to Zinc Sulfide (ZnS) and Gallium Nitride (GaN)
which is 20meV [5] and 26meV [6] respectively. The advantage of ZnO over GaN is
availability of high bulk single crystal and the ability to allow the devices work at and
above room temperature [7]. Recently, ZnO thin films have many remarkable
characteristics and are attracting great attentions. ZnO is a semiconductor that has several
properties including good transparency, high electron mobility, and strong room
temperature luminescence [8, 9].

Generally, ZnO thin films deposited on flexible substrate have some qualities
including more rugged, thinner, and light weight. In particular, it is also easy to bend and
high resistant to impact damage which is for favorable optical and electrical qualities [4,
2

10, 11]. At present, the flexible substrates that are normally used can be given as
polycarbonate (PC), polyethersulfhone (PES), polyethylene naphthalate (PEN),
polyethylene terephthalate (PET), polyimide (PI), poly propylene carbonate (PPC), and
polytetrafluoroethylene (Teflon) [10-12]. In this project, Teflon was chosen as flexible
substrate because it has more improved performance in the highest transmittance and
lowest resistivity compared to other flexible substrates. The properties of Teflon which
are low chemical reactivity, high melting point (~327
O
C) and low coefficient friction
(0.05 to 0.10), make it suitable choice for many microelectronic applications.
Furthermore, Teflon can withstand corrosive environments and low dissipation factor.

There are various kind of techniques can used to deposited ZnO thin films
including thermal evaporation, molecular beam epitaxy (MBE), chemical vapor
deposition (CVD), sol-gel processing, pulsed laser deposition, direct current (DC) and
radio frequency (RF) magnetron sputtering [13-18]. Among these growth methods of
ZnO thin film, RF magnetron sputtering process is widely used to prepare thin films,
which has favorable properties of high deposition rate, good film adhesion and suitable
method for the growth of uniform and transparent ZnO thin film [10, 15, 16, 19]. Besides
that, RF magnetron sputtering is preferred due to its producibility of high quality films at
lower substrate temperature as low as room temperature. Moreover, it is also flexible to
control the composition and microstructure, and suitable for a large scale deposition.

ZnO thin films have great attentions such as highly transparent and conductive
that suitable for different practical applications such as transparent, conducting
electrodes, sensors, solar cells, and thin film transistor (TFT) [20-22]. With their unique
optical properties of reflection or absorption can be used in solar cells application. The
films also have widely been used as surface acoustic wave devices (SAW) and bulk
acoustic devices because of its strong piezoelectric effect [23, 24]. This effect is might
due to the high resistivity and perfect c axis orientation texture. The characteristics of
ZnO including electrical and optical properties heavily depend on the crystallinity,
crystallographic orientation, crystallite size and morphology of the thin films [25].

3

1.2 PROBLEM STATEMENT

Recently, there are numerous techniques to deposit the ZnO thin films that have
been reported to obtain the good crystalline quality thin films on flexible substrate. In
improving the electrical and optical properties, the researchers have been used high
temperature deposition to obtain the good quality of thin films. The deposition thin film
at high substrate temperature is unfavorable for flexible substrate. So, there is a need to
have technique to produce good quality of thin films at low temperature on flexible
substrate. Instead, at low temperature deposition will lead to poor crystalline quality of
thin films. To overcome this problem, RF magnetron sputtering deposition technique has
been chosen for this project and thus the sputtering conditions need to be optimized.

1.3 OBJECTIVE

The main objective of this project is to deposit the ZnO thin films on Teflon
substrate using RF magnetron sputtering technique. In achieving the main objective,
several specific objectives have been set:
1. To study the effects of sputtering pressure on structural, optical, and electrical
properties of ZnO thin films.
2. To study the effects of percentage of oxygen or O
2
ratio on structural, optical,
and electrical properties of ZnO thin films.

1.4 SCOPE OF WORK

The scope of this project was to prepare ZnO thin films with different sputtering
pressure at 5, 10, 13, and 15mTorr and percentage of oxygen at 0%, 10%, 20%, and 30%.
Then, all of them were investigated on the structural, optical, and electrical properties.
The surface morphology were investigated by Field Emission Scanning Electron
Microscopy (FESEM) while the thickness of thin films by Surface Profiler System. X-ray
Diffraction (XRD) was used to characterize the crystal structure. The optical properties
which are transmittance and energy optical band gap determined by the data measured
4

from UV-VIS/NIR Spectrophotometer. The Current Voltage (I-V) Measurement for thin
films on Teflon substrates was analyzed using 2 probes and power supply (Advantest) to
determine the electrical properties for conductivity and resistivity.

1.5 ORGANIZATION OF THESIS

This thesis consists of five chapters. Chapter 1 presents the introduction of the
project, where the idea of this project was described clearly. It includes the significance
of this project and objective of carrying out this research. From there, the scope of works
in order to complete this project was discussed.

Chapter 2 focused on the background of the area of research project. In this
chapter, the fundamental of the physical and structure properties of zinc oxide as a
semiconductor will be discussed in detail. The elaboration about the flexible substrate
was described. The RF magnetron sputtering method was explained to introduce the
deposition process in the thin film process. The ZnO thin films for some applications also
had been discussed in this chapter.

The methodology or experiments process of this project is subject of Chapter 3. In
this chapter, the flow of experiment from preparation of cleaning substrate until the
characterization part was explained in details.

Chapter 4 covers in details about the result and discussion. This chapter focused
the effect of sputtering pressure and percentage of oxygen on the structural, optical, and
electrical properties. The results of all properties were displayed in tables and graphs.

The last chapter, Chapter 5 is conclusion. In this chapter, all findings were
mentioned to make sure the objectives and goals of this project were achieved. The future
recommendation of the project also includes in this chapter.

5

CHAPTER 2

LITERATURE REVIEW

This chapter describes about the background of the area of this project. There are
four sections within this chapter. First and second section is about the fundamentals of
the properties of zinc oxide (ZnO) and followed by the elaboration of flexible substrate.
The introduction the deposition process in the thin film process using radio frequency
(RF) magnetron sputtering was explained in the fourth section. Lastly, ZnO thin films for
some applications discussed in the last section of this chapter.

2.1 ZINC OXIDE (ZNO)

There is a wealth of literature on the fundamentals and characteristics for ZnO as
a semiconductor. Good review of fundamentals of ZnO as a semiconductor published in
2009 by Anderson Janotti and Chris G Van de Walle [26]. They described, in scope of
material science; ZnO is naturally n-type semiconductor that formed from II-VI
semiconductor group. N-type is native doping of the semiconductor due to oxygen
vacancies. ZnO have many attracting great attentions such as high electron mobility, high
thermal conductivity, strong room temperature luminescence, wide direct band gap and
large exciton binding energy that suitable for a wide range of semiconductor device
applications.

Another review of fundamentals properties of ZnO published in 2011 by John
Wiley & Sons, Ltd [27]. They discussed the significant of ZnO material where its optical
and electrical properties become sizable independent which become suitable material for
optoelectronic applications. In theoretical overview, the fundamental band structure of
6

ZnO has two general bands which is valence and conduction bands that also known as the
optical energy band gap. The exciton binding energy of ZnO that calculated was
important element of the optical properties. The properties of ZnO were influenced by
added the impurities in order to control amount in ZnO. For the implementation of
optoelectronic devices, one will need Schottky barriers and ohmic contracts to be
considered for the electrical properties.

2.2 PROPERTIES OF ZNO

The part list of the properties of ZnO that differentiate it from other
semiconductors or oxides includes:

2.2.1 Structural and Physical Properties

2.2.1.1 Crystal Structure

Zinc oxide crystallizes occur in hexagonal wurtzite (B4), cubic zinc
blende (B3), and the rarely observed cubic rocksalt (B1) form as shown in Figure
2.1. The structure of the group IIVI binary compound semiconductors crystallize
formed with cubic zinc blende or hexagonal wurtzite (Wz) structure that anion
surrounded by four cations at the corners of a tetrahedron, and vice versa has been
stated by Hadis Morkoc and Umit Ozgur [28]. The wurtzite structure is most
stable and widely use in preparation thin films [3]. It is because the
thermodynamically stable phase is that of wurtzite symmetry under ambient
conditions [28]. ZnO has a stable wurtzite structure with lattice spacing a = 0.325
nm and c = 0.521 nm has been reported by Zhiyong Fan and Jia G. Lu [29]. The
hexagonal and zincblende ZnO lattices have no inversion symmetry.

7

2.2.1.2 Direct and Wide Band Gap

The band gap of ZnO is 3.37 eV [1-3, 26-30] at room temperatures and
3.44 eV at low temperature [26]. For comparison, the respective values for
wurtzite GaN are 3.44 eV and 3.50 eV [26]. In addition, ZnO suitable for short
wavelength optoelectronic applications has been reported by Zhong Lin Wang
[30]. Figure 2.2 shows the direct band gap that an electron can shift from the
lowest-energy state to the highest-energy.

Figure 2.2: Direct band gap semiconductor
Figure 2.1: Stick-and-ball representation of ZnO crystal structures: (a) cubic rocksalt (B1),
(b) cubic zinc blende (B3), and (c) hexagonal wurtzite (B4). Shaded gray and black spheres
denote Zn and O atoms, respectively.
(b) (c) (a)
8

2.2.2 Optical Properties

2.2.2.1 Large Exciton Binding Energy

The free-exciton binding energy in ZnO is 60 meV [1-3, 26-30], as
compared to Zinc Sulfide (ZnS) and Gallium Nitride (GaN) which is 20meV
reported by S. Shishiyanu et.al [5] and 26meV reported by Mahayatun Dayana
Johan Ooi et.al [6], respectively.This large exciton binding energy reveals that
efficient excitonic emission in ZnO can continue at room temperature and above.
The strength of excitons is typically much larger than that of direct electronhole
transitions in direct gap semiconductor, the large exciton binding energy makes
ZnO a promising material for optical devices that are based on excitonic effects.
ZnO is available as large bulk single crystals that difference with GaN in the
wurtzite structure, [26]. Figure 2.3 shows the exciton energy levels in a direct gap
semiconductor.

2.2.2.2 Strong Luminescence

N-type conductivity of ZnO makes it suitable for applications in vacuum
fluorescent displays and field emission displays. The source of the luminescence
center and mechanism are not really understood that due to the oxygen vacancies
Figure 2.3: Exciton energy level in direct band gap semiconductor
9

or zinc interstitials, without any clear support. These defects cannot emit in the
green region, and it has been suggested that zinc vacancies are a more likely cause
of the green luminescence has been reported by by Anderson Janotti and Chris G
Van de Walle [26].

2.2.3 Electrical Properties

Large band gap have more favorable characteristics including lower noise
generation, higher breakdown voltages, and ability to sustain large electric fields [28].

2.2.3.1 Conduction Mechanism

The major issue in electrical properties is controlling the conductivity in
ZnO. The significant affect the electrical and optical properties of semiconductor
due to the impurities and relative small concentrations of native point defects.
Therefore, the controlling the conductivity in ZnO can be accept the role of native
point defects (i.e. vacancies, interstitials, and antisites) and the merged of
impurities. It has been the unintentional n-type conductivity in ZnO is caused by
the presence of oxygen vacancies or zinc interstitials reported by Hsin-Chiang
You et.al, Anderson Janotti and Chris G Van de Wall [4, 26].

2.2.3.2 High Electron Mobility

The electron transfer in semiconductors can be considered for low and
high electric fields due to the scattering rates of electron mobility depend on the
electron distribution function. This electron mobility remains independent of the
applied electric field, and Ohms law is obeyed. Electric field is increased when
the energy gained by electrons from the external field is no longer negligible
compared to the thermal energy of the electron has been stated by Hadis Morkoc
and Umit Ozgur [28]. The balance value could be changed the function of
electron distribution.
10

2.3 FLEXIBLE SUBSTRATES

Research on flexible substrate was reported in 2011 by T. Higaki et.al [13]. ZnO
is well known as an ecological and economical semiconductor due to the greatest
potential to grow high-quality crystals at low temperature. This is particularly
advantageous for electronic devices such as thin film transistors (TFTs) that attracted
more favorable for applications such as flexible electronic devices. The fabrication of
TFTs at low temperature on flexible substrates is a key technique to realize flexible
electronics.

Especially for certain applications, such as smart card, electronic map and flat
panel display where flexibility and lightweight are needed. Therefore transparent
conducting films deposited on flexible polymer substrates could overcome these
problems and its necessary to investigate the characteristic of the oxide thin films
deposited on polymer substrates reported by Z.L. Pei et.al in 2005 [31].

Another research on flexible substrate was reported in this year, 2012 by Nur
Saadah Muhamad Sauki et.al [12]. The flexible displays incorporate transparent
conducting oxide (TCO) films on plastic substrates, also referred to as flexible
displays. Many researchers normally used Indium Tin Oxide (ITO) as transparent
conducting coating on flexible substrates. However, ITO thin films must be deposited at
high temperatures. Flexible substrate that deposited of thin films had improving
performance than glass substrate such as light weight, high transparency, and flexible at
low process temperature a show as room temperature.

There is numerous of flexible substrate that existed for used in research
development [4, 10-12, 31, 32]. Flexible substrates that are normally used can be given as
polycarbonate (PC), polyethersulfhone (PES), polyethylene naphthalate (PEN),
polyethylene terephthalate (PET), polyimide (PI), poly propylene carbonate (PPC), and
polytetrafluoroethylene (Teflon) [10-12, 32]. Table 1 shows the differences between the
flexible substrates.
11

No. Flexible Substrate Thin Films
Transmittance
(%)
Resistivity
(cm)
1. Polysocyanate (PI)
Al doped Zn 82 4.1x10
-3
to
5.1x10
-4

2.
Polyethylene
terephthalate (PET)
ZnO
ITO
>80
>90
2.9x10
-3
to 4x10
-3

5.1x10
-4

3.
Poly propylene
carbonate (PPC)
ZnO >80 10
-1
4.
Polytetrafluoroethylene
(Teflon)
ZnO >85

2.3.1 Polytetrafluoroethylene (Teflon) Substrate

According to research on deposition of ZnO thin film on Teflon substrate by the
magnetron sputtering method done on 2007 by Yun-yan Liu et.al, Teflon had many
advanced properties, such as high dielectric strength over various frequencies, low
dissipation factor, and high surface electrical resistivity, which had made Teflon a
competitive polymer choice in a variety of microelectronic applications [32]. The plastic
substrate provides devices that are lighter in weight and more resistant to impact damage,
making them suitable for portable devices. ZnO thin films are technologically important
materials due to its wide range of optical and electrical properties. It can withstand
corrosive environments, and have a high dielectric strength over many different
frequencies, a low dissipation factor, and a high surface resistivity.

There are two significant properties which are electrical and optical properties in
improving the flexible display performance that including transmittance and resistivity.
Teflon substrate was preferred as a flexible substrates because its shows the highest
transmittance other than flexible substrates. The properties of Teflon which are low
chemical reactivity, high melting point (~327
O
C) and low coefficient friction (0.05 to
Table 2.1: Differences between Flexible Substrates
12

0.10), make it suitable choice for many microelectronic applications. Furthermore, Teflon
can withstand corrosive environments and low dissipation factor. It also has high surface
resistivity [12, 32]. Figure 2.4 shows the molecular structure of Teflon that it is a polymer
with the monomer of (CF2CF2) and its chemical structure.

2.4 DEPOSITION OF ZINC OXIDE (ZNO) THIN FILMS

ZnO films can be deposited by various deposition techniques, such as thermal
evaporation, molecular beam epitaxy (MBE), chemical vapor deposition (CVD), sol-gel
processing, pulsed laser deposition, direct current (DC) and radio frequency (RF)
magnetron sputtering [13-18]. The most commonly used technique, sputtering is able to
obtain good orientation and uniform films close to single-crystal morphology even on
amorphous substrate or at low substrate temperature on flexible substrates as reported by
Yun-yan Liu et.al in 2007 [32] and Nur Saadah Muhamad Sauki et.al in 2012 [12].
Moreover, RF sputtering is the least damaging technique since it generates relatively low
energy particles and uses a high plasma density and the high ion-to-neutral ratio thereby
reducing the required power that reported by Walter Water and Shen-Yuan Chu et.al in
2002 [33].

Figure 2.4: Molecular structure of Teflon
13

2.4.1 Physical Vapor Deposition (PVD) by Sputtering

According to handbook of Physical Vapor Deposition (PVD) Processing, 2
nd

Edition by Donald M. Mattox [34], PVD is a process to deposit a thin film of material on
several of substrates according to the following sequence of steps:

1. The material to deposit is converted into vapor by physical means;

2. The vapor is transported across a region of low pressure from its source to the
substrate; and

3. The vapor undergoes condensation on the substrate to form the thin film.

2.4.1.1 Radio Frequency (RF) Magnetron Sputtering

From http://www.siliconfareast.com/sputtering [35]., sputtering is a term
used to refer to PVD technique, the technology in which the material is released
atoms or molecules from the source (target) material by high-energy particle
bombardment at much lower temperature than condense on a substrate as a thin
film. The substrate is placed in a vacuum chamber with the source material,
named a target, and an inert gas (such as argon) is introduced at low pressure.
Gas plasma is struck using an RF power source, causing the gas to become
ionized. The ion are accelerated towards the surface of the target, causing atoms
of the source material to break off from the target in vapor form and condense on
all surfaces including the substrate. Table 2.2 shows the advantages and
disadvantages of PVD process.

14

Advantages Disadvantages
1) Formation of good crystallographic
structure
Atoms move and arrange in a good
crystalline form with very high
energy.

1) High capital cost
- High capital expenses are required.
2) Good adhesion and high hardness
Energetic ion bombardment allows
the deposition of dense during
process.
2) Low rate of coating deposition
- The rates of deposition of some
materials (such as SiO2) are
relatively low.
3) Low deposition temperature
(substrate temperature)
- PVD can run below 800C compared
to CVD require high temp for
flexible substrate.

3) Not compatible for various materials
- Some materials such as organic
solids are easily degraded by ionic
bombardment.
4) Smooth coatings
Magnetron sputtered coatings follow
the exact surface roughness of the
substrate material.

4) High tendency to impurities
- Sputtering has a greater tendency to
introduce impurities in the substrate
than deposition by evaporation.
5) Higher sputtering rate
- Better sputter deposition rates
magnetic field to trap these
secondary electrons and have a high
plasma density.

5) Large amounts of heat
- Processes requiring large amounts
of heat require appropriate cooling
systems.
6) Less damage to the deposited film
The use of a magnetic field to trap
these secondary electrons avoids the
electron to move towards the
substrate.
The use of inert gas avoids from any
chemical reaction on the thin film.

6) Complicated to operate
- Some processes operate at high
vacuums and temperatures
requiring skilled operators.
Table 2.2: Advantages and disadvantages of PVD process
15

2.4.1.2 Sputtering Process

There have six important flows that considered as the sputtering process
which are:

1. Sputter Coating Parameters

a. The sputtering parameters can be varied to get the different
characteristic of the thin films.
b. Example of sputtering parameters such as process time, RF power,
sputtering pressure and substrate temperature.

2. Part of Sputtering

a. There is two important parts that functional during sputtering
process which is target and substrate.
b. Target is the solid material to be sputtered while substrate is the
material to be deposited (thin films).

3. Ionization

a. A controlled flow of an inert gas (non-reactive gas) Argon is
introduced.
b. The target is biased to a negative charge (and became a cathode)
by applying an RF power, producing a free electron.
c. These free electrons will approach outer shell of the Argon atom
(Argon gas) producing an Argon ion (Ar).

4. Sputtering

a. The Ar are accelerated and bombarded the Target (cathode).
16

b. Sputter the targets surface and blasting loose atoms in a straight
line. Sputtered atom with high energy deposited onto the substrate
as a thin films.
c. This process neutral gas atom, ions, electrons and photons are
existed.

5. Magnetron Sputtering

a. A permanent magnet is located at the back of the target to create a
magnetic field.
b. A magnetic field is used to trap secondary electrons close to the
target.
c. More ionizing collisions with neutral gaseous near the target
leading to a higher sputter rate.

6. Deposition

a. The targets atoms ejected carrying a very high energy results the
atoms to arrange in a good crystalline form on the substrates.

Figure 2.5: Sputtering process [34]
17

2.5 APPLICATION OF ZINC OXIDE (ZNO) THIN FILMS

ZnO is a very functional material due to its significant properties, such as
piezoelectric, photoelectric, and optical property. ZnO have applications as transparent
electrodes for liquid crystal displays (LCDs), conducting electrodes, thin film transistor
(TFT), sensors, surface acoustic wave devices (SAW) and bulk acoustic devices, and
solar cells [20-24].

With their unique optical properties of reflection or absorption can be used in
solar cells application has been reported by S. Flickyngerova et.al in 2008. ZnO has been
considered as one of the promising materials for the application as a window layer in
solar cell, mainly due to its low cost, abundance and non-toxicity. Thus, ZnO layer is
sensitive to the performance of solar cells and therefore is one of the factors to realize
high efficiency thin film solar cell [36].

Figure 2.6: PVD system by RF magnetron sputtering [35]
18

The films also have widely been used as surface acoustic wave devices (SAW)
and bulk acoustic devices because of its strong piezoelectric effect reported by A. Arora
et.al in 2007 [23] and Mu-Shiang Wu et.al in 1989 [24]. This effect is might due to the
high resistivity and perfect c axis orientation texture. The characteristics of ZnO
including electrical and optical properties heavily depend on the crystallinity,
crystallographic orientation, crystallite size and morphology has been reported by Abd
Halim et.al in 2008 [25].

According to V.P.Kutepova and D.A.Hall in 1998, the layered structure of
piezoelectric thin films deposited onto various substrates is widely used for the
realization of smart acoustic-wave-based micro sensors. SAW thin film devices offer a
wide variety of design choice and great flexibility in terms functional properties [22].

Research on TFT by Dedong Han and Yi Wang et.al in 2008, in recent years, ZnO
has been researched as a potential transparent oxide semiconductor material very much.
ZnO has attracted significant attention due to its extensive applications in varied fields.
They can are used in photodetectors, light-emitting diodes, solar cells, thin film
transistors, because ZnO has good piezoelectric, conductive and optical properties [18].

19

CHAPTER 3

METHODOLOGY

This chapter describes about the methodology that are used in this project. There
are five sections within this chapter. First is about the overview of work for this project
that included the scope of work. Section two discusses about the preparation of cleaning
Teflon substrate and followed by the third section which is the Zinc Oxide (ZnO) thin
films deposition at different pressure and oxygen, O
2
ratio. The final work which is
characterization for structural, optical and electrical properties was explained in the last
section of this chapter.

3.1 OVERVIEW OF WORK

In this project, the planning of works is important to achieve the scope of goals or
objectives for this project. For the all steps, it must follow by sequences to create the
project run smoothly. Figure 3.1 shows the steps of the planning while Figure 3.2 shows
the scope works for this project. Firstly, the title of the project has been given and
identifies the scope of works for this project. Then, make some research and development
about the fabrication works and followed the learning and controlling the machines of
preparation of thin films.
This project focused on to deposit the ZnO thin films on Teflon substrate using
radio frequency (RF) magnetron sputtering technique. The preparation of ZnO thin films
divides into two parts which is sputtering pressure and oxygen, O
2
ratio. Then,
characterize the both of thin films and collect the final data. Meanwhile, the technical
paper began to start writing and submit it. After finishing the presentation, proceed to
writing thesis of the whole project and submit it.
20

Indentify the scope of project
Start
Introduction of fabrication work
Literature review
Learn cleaning substrate
Learn controlling PVD machine
Preparation
Sample for sputtering
pressure
Sample for oxygen,
O
2
ratio
Characterization
Final work and collect data
Technical paper writing and submission
Final presentation
Thesis writing and submission
End
Figure 3.1: Flow chart for overall of the project
1 2
21

Characterization of:
a. Structural Properties
i. Surface morphology: Field-Emission
Scanning Electron Microscopy (FESEM).
ii. Crystal structure: X-ray Diffraction with
CuK radiation.
iii. Thickness and deposition rate: -step 500
Surface Profiler system.

b. Optical Properties
i. Transmittance and optical energy band gap:
JASCO UV-VIS/NIR spectrophotometer.

c. Electrical Properties
i. IV characteristics, conductivity, and
resistivity: Current Voltage (I-V)
Measurement.

Cleaning Teflon substrate using standard method
Start
End
Figure 3.2: Flow chart for scope of work
1 2
ZnO thin film deposition on Teflon
substrate by RF magnetron sputtering at
ZnO thin film deposition on Teflon
substrate by RF magnetron sputtering at
different oxygen, O
2
ratio
22

3.2 PREPARATION OF CLEANING TEFLON SUBSTRATE

In order to produce quality ZnO thin films, the substrate need to be cleaned in
order to remove organic and inorganic contamination (e.g other chemical that contain on
the surface of substrate). Firstly, clean the substrates using acetone by ultrasonic cleaner
for 10 minutes. Second, clean again the substrates using methanol or ethanol by
ultrasonic cleaner for 10 minutes. Then, deionised (DI) water used for clean the
substrates by ultrasonic cleaner for 10 minutes. After all cleaning using the different of
chemical steps, the substrates must be rinsed with DI water for the single step for every
each steps. Lastly, dry the substrates using nitrogen gas. The total of cleaning was around
30 minutes. Figure 3.3 shows the pictures of ethanol, acetone, and DI water while Figure
3.4 show the ultrasonic cleaner machine. Figure 3.5 shows the flow chart of cleaning
substrates.

Figure 3.4: Ultrasonic cleaner machine
Figure 3.3: (a) Ethanol (b) Acetone and (c) Deionised (DI) water
(c) (b) (a)
23

Place substrate in Acetone
Clean in Ultrasonic Cleaner for 10mins
Rinse with Deionised (DI) water
Place substrate in Methanol
Place substrate in DI water
Dry the substrates using Nitrogen Gas

Start
End
Figure 3.5: Flow chart for cleaning substrate
24

3.3 PREPARATION OF ZNO THIN FILMS DEPOSITION

ZnO thin films were deposited using Physical Vapor Deposition (PVD)
SNTEK/PSP-5004 by RF magnetron sputtering as shown in Figure 3.6. The most
important step before to start any preparation, make sure the gloves are used to minimize
the contamination on the sample. Teflon substrates were stacked using conductive
(Kapton) tape on the silicon wafer with a diameter of 15.24 cm that used as a base during
deposition process. PVD machine system consists of six parts to generate the machine
which are:

1. Power Supply System (DC/RF Power): The power supply that used to
deposit the ZnO thin films is RF power. RF power was used to generate the
plasma that contain in vacuum chamber.

2. PVD Control System: The process of preparation was controlled at the
monitor controlling to setting the parameters of deposition thin films.

3. Vacuum Chamber: There have two chambers which are main chamber and
load lock chamber. The Teflon substrates were put into the load lock chamber.
The substrates at load lock chamber were automatically transferred into the
main chamber after pump pressure reached at measurement -100.1 atm.

4. Vacuum Pump with Turbo: The sputter chamber was pumped to the
background pressure of 5x10
-4
Pa using a turbo molecular pump.

5. Vacuum Pump: The load lock chamber and the chamber was pump by rotary
pump until the pressure reached at least 5x10
-2
Torr.

6. Gas Feeding: The argon, Ar gas with different O
2
flow rates was introduced
into the sputtering chamber during deposition thin films.
25

Power Supply
System (DC
/RF Power)
PVD Control
System
Gas Feeding
(O
2
, Ar, and N
2
)
Main Chamber
Vacuum Pump
Load Lock
Chamber
Vacuum Chamber
Vacuum Pump with Turbo
Figure 3.6: Schematic diagram of PVD machine system
26

S/V open (wait until PSA-V01 = -100.00)
S/V close (wait until pressure below 5x10
-2
Torr)
LR/V open
GSD/V close
Parameter recipes (PLC transfer)
Loading
cycle
Process start (wait until 1 hour)
Upload success (wait warning buzzer)
Process complete (wait warning buzzer)
Uploading cycle (wait warning buzzer)
LR/V close
L/VENT open
No
Start
End
Figure 3.7: Flow chart of fully auto preparation of ZnO thin films
27

3.3.1 ZnO Thin Films Deposition

ZnO (99.99%) was used as the target with the diameter of 4 inches and thickness
of 0.25 inches. The sputter chamber was pumped to the background pressure of 5x10
-4
Pa
using a turbo molecular pump. During the sputtering process, the RF power at target
material 3 for ZnO was fixed at 200 W while the substrate temperature was kept at 40 C
[12]. These fixed values of RF power and temperature substrate were optimum value that
reported by Nur Saadah Muhamad Sauki et.al in 2012 for ZnO thin films deposited on
Teflon substrate. Pure inert gas, Argon/Ar (99.99%) of 45 sccm was inserted [12]. The
varied parameters were the sputtering pressure and O
2
ratio. The sputtering pressure was
varied from 5 to 15 mTorr and the O
2
ratio was varied from 0 % to 30 %. The deposition
was done in 1 hour. The sputtering conditions during the deposition of ZnO thin films for
sputtering pressure are given in Table 3.1.

The percentage of oxygen was calculated using this formula:

Sputtering target

ZnO (99.99%)
(4 inches diameter and 0.25 inches thickness)
Substrate Teflon
Ar / O
2
gas flow rate 45 / 0, 45 / 5, 40 / 10, 35 / 15 sccm
O
2
ratio 0, 10, 20, and 30 %
Background pressure 5x10
-4
Pa
Sputtering pressure 5, 10, 13, and 15 mTorr
Heating temperature 40C
Sputtering power 200 W
Deposition time 3600 sec (1 hour)
50 sccm
x 100%
Table 3.1: Sputtering conditions during the deposition of ZnO thin films at sputtering
pressure and O
2
ratio
Value of gas flow
= O
2
ratio ..... (3.1)
ratio
28

3.4 CHARACTERIZATION OF ZNO THIN FILMS

The characterization was divided into three parts which are to measure its
structural, electrical and optical properties of ZnO thin films deposited on Teflon
substrates. The structural properties were investigated on surface morphology, crystal
structure, thickness, and deposition rate. The surface morphology of ZnO thin films were
examined using Field Emission Scanning Electron Microscopy (FESEM), the crystalline
structures were characterised using Rigaku Ultima IV X-ray Diffractometer (XRD), and
thickness by Surface Profiler system. The optical properties were investigated
transmittance and optical energy band gap using JASCO UV-Vis-NIR
spectrophotometer. The electrical properties for conductivity and resistivity were
investigated using Current Voltage (I-V) Measurement that conducted for thin films on
Teflon substrates analyze using 2 probes and power supply (Advantest).

3.4.1 Structural Properties

3.4.1.1 Surface Morphology

The surface morphology of ZnO thin films deposited on Teflon substrates
were investigated by FESEM machine as shown in Figure 3.8 (a). The FESEM
produces images and detail information about the structure or morphology of
arrangement of particles and the composition of natural and deposited materials
such as ZnO on several of substrates. The images are in very high resolution at
very high magnification and show the particle shapes and sizes that involved the
nanoscale. The data that captured was sent to a Windows PC and is interpreted
into a common digital image format such as the photos. Table 3.2 shows the
settings during FESEM measurement. In additional information, Zn is a good
conductor but when it becomes ZnO, it is poor conductor on the top of the
insulator substrate that was used and during the preparation of thin films. To
overcome for this problem, the thin coating of metal was carried out using sputter
coater as shown in Figure 3.8 (b). For example, gold or aurum, Au coated on the
29

top of layer thin films to increase the conductivity of samples during FESEM
characterization as shown in Figure 3.9.

3.4.1.2 Crystal Structure

The crystalline structures of deposited thin films were characterised using
Rigaku Ultima IV X-ray diffractometer (XRD). XRD is the atomic planes of
crystal cause an incident beam X-rays to interface with one another as they leave
the crystal. The purpose of XRD is to determine the crystal orientation of a
crystal.

Specific of
magnification
80 000, 100 000, and 150 000
Power 5 kV
Material for coating Aurum, Au or gold with thick 7 nm
Table 3.2: The setting during FESEM measurement
Figure 3.9: ZnO thin films configuration during FESEM
ZnO thin films
Aurum, Au or gold with thickness 7 nm
Teflon substrate
Figure 3.8: (a) FESEM machine with monitoring system (b) Sputter coater machine
(a) (b)
30

3.4.1.3 Thickness of Thin Films

The thicknesses of the deposited ZnO thin film were examined using
Surface Profiler system. The Teflon substrate was replaced by glass substrate due
to the surface of Teflon substrate that easy to bending or not flat during the
measurement of thickness. So, during the preparation of deposition thin films, the
glass substrate also was placed together to measure the thickness of thin films
only. We assume that the deposition rate on Teflon and glass substrate is the same
under chamber condition during sputtering pressure. The data of thickness was
collected at many places of edge thin films to found the averages thickness of thin
films. This data also used in determining the deposition rate, absorption
coefficient, and resistivity. The surface profiler used in this research is Veeco/D
150+ surface profiler as shown in Figure 3.10.

3.4.1.4 Deposition Rate

After the averages thickness of thin films was found, the deposition rate of
deposited ZnO thin films was calculated using the Equation 3.2. The averages of
thickness were divided with deposition time process for 1 hour or 60 minutes.

60 min
Figure 3.10: Surface profiler system
Averages of thickness thin films
= Deposition rate (nm/min) ..... (3.2)
ratio
31


The optical properties of ZnO thin films were measured by JASCO UV-Vis-NIR
Spectrophotometer as shown in Figure 3.11. The JASCO UV-Vis-NIR
Spectrophotometer involves the spectroscopy of photons and spectrophotometry. The
basic components are light source, sample chamber, optical system, detector, software
and data storages, and output.

3.4.2.1 Transmittance Spectra

Transmittance is the part of incident light or electromagnetic radiation at
specified wavelength that passes through samples depends on the types of
material that deposited. For example, the wavelength region of ZnO in nanoscale
was presented ultraviolet cut-off approximately at 300 nm until more than 800 nm
that reported by G.Anil Kumar et.al by 2011. The average transmittance values
with highly transparent in the visible range of electromagnetic for thin films were
shown in values of percentage [37]. The transmittance data obtained using
JASCO UV-Vis-NIR Spectrophotometer was used to define other properties such
as optical energy band gap of the deposited ZnO thin films.

3.4.2.2 Optical Energy Band Gap

The absorption coefficient of the ZnO thin film could be calculated from
the transmittance spectra data using Lamberts law as shown in Equation 3.3 [38]:
Figure 3.11: JASCO UV-Vis-NIR Spectrophotometer
32

where is the absorption coefficient, t is the thickness of the film and T is the
transmittance value at respective wavelength. The optical band gap (Eg) has been
calculated using Tauc's formula as shown in Equation 3.4 [37]:

where a is the absorption coefficient, (hv) is the incident photon energy, A is a
constant, and the exponent n assumes the values 1/2, 2, 3/2 and 3 for allowed
direct, allowed indirect, forbidden direct and forbidden indirect transitions,
respectively.The relation of direct band gap energy with the absorption coefficient
and photon energy for ZnO is shown in Equation 3.5 [37]:

where A is the constant and h is the Plank constant, v is the speed of the light and
hv are called the photon energy. By plotting (hv)
2
versus hv and extrapolating
the linear portion, the optical energy band gap is estimated.


The electrical properties of ZnO thin film were measured by using Current-
Voltage (I-V) Measurement (Keithley 2400) as shown in Figure 3.12. Two probes are
tapped on the electrode in order to measure the electrical properties. From I-V
measurement, the thin films conductivity, resistivity, and Ohmic or Schottky behaviour
can be obtained. Figure 3.13 shows the pattern of metal coated with gold on the glass of
ZnO thin films. This process used to have the electrode in order to calculate the ZnO thin
films conductivity and resistivity.

n
g
E hv hv A ) )( / ( = o
|
.
|
\
|
|
.
|
\
|
=
T t
1
ln
1
o
..... (3.3)
ratio
..... (3.4)
ratio
2
1
) (
g
E hv A hv = o
..... (3.5)
ratio
33

3.4.3.1Metal Contact Deposition

Gold or aurum, Au was used as a metal contact between sample and probe
to measure effect of Ohmic and Shottcky behaviour for the I-V characteristics of
thin films. Gold was chosen because it is the better conductor compared to
aluminium, Al reported by Chiu lin Yao et.al [39]. The metal contact was
deposited using Ulvac VCP-1100 Thermal Evaporator that shown in Figure 3.14.

ZnO thin films
Aurum, Au or gold
Teflon substrate
Two probes tapped on electrode
Figure 3.12: Current-Voltage (I-V) Measurement (Keithley 2400)
Figure 3.13: Device configuration of ZnO thin films deposited on Teflon substrate
Figure 3.14: Ulvac VCP-1100 Thermal Evaporator
34

3.4.3.2 Current Voltage I-V Characteristics

The current voltage (I-V) characteristics conduct for thin films on Teflon
substrates analyzed using 2 probes and power supply (Advantest) to determine the
electrical properties for conductivity and resistivity. First steps for measure
electrical properties is to obtained Ohmic or Schottky behaviour for ZnO thin
films deposited on Teflon substrates with metal contact as shown in Figure 3.13.
The probes were ensured to touch the surface of electrode at desired place as
shown in Figure 3.15.

3.4.3.3 Conductivity and Resistivity

The Figure 3.16 shows the device configuration of ZnO thin films I-V
measurement. The two probes are tapped on the electrode in order to measure the
electrical properties. From I-V measurement data, resistivity of the film, is
calculated using Equation 3.6:

ZnO thin
films
(c) 0.000976 m
(d) 0.001994 m
(b) 0.000455 m
Gold
electrode
w = 0.003003125 m
(a) 0.0000662 m
Figure 3.15: (a), (b), (c), and (d) is the distance for length between gold and gold
l
wt
I
V
|
.
|
\
|
= ..... (3.6)
ratio
35

where V is the supplied voltage, I is the measured current, t is the thickness of the
film, w is the electrode width and l is the length between electrodes. The
conductivity of film, is the inversely proportional of the resistivity, as
following Equation 3.7:

l
w
t
ZnO thin films
Gold electrode
Teflon Substrate
Figure 3.16: Device configuration of ZnO thin films for I-V measurement
..... (3.7)
ratio
o
1
=
36

CHAPTER 4

RESULTS AND DISCUSSION

This chapter describes about the results in this project which is for sputtering
pressure and oxygen ratio (gas flow rate between Argon, Ar and Oxygen, O
2
). The aim of
this project is to study the effects of the structural, optical, and electrical properties of
Zinc Oxide (ZnO) thin films deposited on Teflon substrates. The results of both
depositions were including surface morphology, crystal structure, thickness, and
deposition rate for structural properties. The electrical properties which are current
voltage (IV) characteristics, conductivity, and resistivity also are discussed.

4.1 DEPOSITION OF ZNO THIN FILMS AT DIFFERENT SPUTTERING
PRESSURE

ZnO thin films were deposited on Teflon substrates with varied in sputtering
pressure from 5, 10, 13, to 15 mTorr using radio frequency (RF) magnetron sputtering
technique. V. P. Kutepova and D. A. Hall reported that the sputtering pressure giving the
impact energy of ZnO species which is bombarding the growing films surface by
energetic particles in RF magnetron sputtering system [39]. Thus we investigated the
effects on the ZnO thin films properties.



37

Figure 4.1 (a), (b), (c), and (d) show the Field Emission Scanning Electron
Microscopy (FESEM) images of ZnO thin films deposited on Teflon substrates at
the different pressures of at 5mTorr, 10mTorr, 13mTorr, and 15mTorr
respectively. It shows that all deposited thin films consist of nanoscale particles
forming small compact grains. Figure 4.1 (a) showed the sample deposited at
5mTorr exhibits columnar structured grains with quite relatively compact grains.
When the sputtering pressure was increased, the size of the grains change to more
expand and seen as rupture as shown in Figure 4.1 (d). This might due to the high
bombardment of the growing film surface by energetic particles transferring their
energy and momentum to condensing ZnO species on the surface of substrate
during sputtering process. Furthermore, the energy of particles arriving on the
surface substrate is lower due to the large number of collisions between the
particles [40].

(a)
(b)
38

4.1.1.2 Thickness and Deposition Rate

Figure 4.2 showed relation between the thin films thickness (m) and
sputtering pressure (mTorr) while Figure 4.3 showed relation between the
deposition rate (nm/min) and sputtering pressure (mTorr) of ZnO thin films
deposited on Teflon substrates. It can be seen that the thickness of ZnO thin films
decreases with increasing pressure. When the pressure increases, the zinc atoms
generated by sputtering and the probability of the zinc atoms arriving on the
substrate decreased. It indicates that at the higher sputtering pressure will result in
Figure 4.1 : FESEM images of deposited ZnO thin films at different substrate
pressures (a) 5mTorr (b) 10mTorr (c) 13mTorr and (d) 15mTorr

(d)
(c)
39

a lower deposition rate and thickness which are 6.0 nm / min and 0.36 m
respectively as shown in Table 4.1. Meanwhile, the lower sputtering pressure
indicates at higher thickness and deposition rate which are 0.51 m and 8.5 nm /
min.

4 6 8 10 12 14 16
0.34
0.36
0.38
0.40
0.42
0.44
0.46
0.48
0.50
0.52
T
h
i
c
k
n
e
s
s

(
1
x
1
0
-
6
m
)
Sputtering Pressure (mTorr)
Thickness
Figure 4.2: Relation between thin films thickness (m) and sputtering pressure (mTorr)
4 6 8 10 12 14 16
6.0
6.5
7.0
7.5
8.0
8.5
D
e
p
o
s
i
t
i
o
n

R
a
t
e

(
n
m
/
m
i
n
)
Deposition Rate
Figure 4.3: Relation between deposition rate (nm/min) and sputtering pressure (mTorr)
40


4.1.2.1 Transmittance Spectra

The wavelength dependence of optical transmittance spectra of the ZnO
films deposited at different pressure are shown in Figure 4.4. It indicates that the
ZnO thin films have a transmittance in visible wavelength between 45 % and 85
% influenced by sputtering pressure although not having any specific trend. The
absorption due to an interband transition of ZnO occurs in the wavelength range
from 370 to 800 nm.

Sputtering pressure (mTorr) Thickness (1 x 10
-6
m) Deposition rate (nm/min)
5 0.51 8.5
10 0.43 7.2
13 0.40 6.7
15 0.36 6.0
Table 4.1: Thin films thickness (m) and deposition rate (nm/min) at different sputtering
pressure
Figure 4.4: Optical transmittance spectra of ZnO thin films deposited on Teflons

300 400 500 600 700 800
0
20
40
60
80
100
15 mTorr
10 mTorr
5 mTorr
T
r
a
n
s
m
i
t
t
a
n
c
e

(
%
)
Wavelenght (nm)
5mTorr
10mTorr
13mTorr
15mTorr
13 mTorr
41

4.1.2.2 Optical Energy Band Gap

The optical energy band gap of ZnO thin films was determined using
absorption spectra with the help of relation direct band gap energy with the
absorption coefficient and photon energy is shown in Equation 4.1:

where is the absorption coefficient, h is the photon energy which is h is the
Plank constant, v is the speed of the light E
g
is the optical energy band gap, and A
is a constant depending on the electron-hole mobility has been reported by M.
Irimia et.al [20]. From the measurement of the thickness and transmittance data
that were taken, the absorption coefficient, can be obtained using Lamberts law
as shown in Equation 4.2:

where t is the thin film of thickness and T is the transmittance. Using these
relations, the optical energy band gap, Eg can be determined using Taucs plot by
extrapolating the linear curve to the photon energy, h axis as shown in Figure
4.5.

) ( ) (
2 2
g
E hv A hv = o
|
.
|
\
|
|
.
|
\
|
=
T t
1
ln
1
o
(
o
h
v
)
2
(
x
1
0
1
3

e
V
2
m
-
2
)
3.0 3.1 3.2 3.3 3.4
0.00E+000
1.00E+015
2.00E+015
3.00E+015
4.00E+015
5.00E+015
6.00E+015
7.00E+015
8.00E+015
9.00E+015
5 mTorr
10 mTorr
13 mTorr
Photon energy (eV)
5mTorr
10mTorr
13mTorr
15mTorr
15 mTorr
Figure 4.5: Optical energy band gap of ZnO thin films deposited on Teflons

..... (4.1)
ratio
..... (4.2)
ratio
42

The fundamental absorption, which corresponds to electron excitation from the
valance to conduction bands, can be used to determine the nature and value of the
optical band gap. The increase of the optical energy band gap with the increase in
sputtering pressure is observed as shown in Table 4.2. The band gap increases
from 3.28 to 3.34 eV due to the increase of crystallite size has been reported by G.
A. Kumar et.al. They were stated that the enhancement of band gap was attributed
to the quantum size effect of crystallite with different effects which is the cluster
size or grain size, grain boundaries, and defect states [37]. Table 4.2 shows the
results of transmittance and optical energy band gap of deposited ZnO thin films
at different pressure.

Sputtering pressure (mTorr) Transmittance (%)
Optical energy band gap
(eV)
5 67 3.28
10 45 3.32
13 85 3.33
15 57 3.34


4.1.3.1 Current Voltage (I-V) Characteristics

Figure 4.6 showed the I-V characteristic of ZnO thin films deposited on
Teflon substrates at different sputtering pressure. The linear dependence of the
graph for all sputtering pressure indicates an Ohmic behavior of the gold (Au)
contact with the thin films on Teflon substrates. It also could be observed that the
current intensity of the samples decreases as the sputtering pressure increases. The
highest and lowest current readings were at 5 mTorr and 10 mTorr respectively.
At 10 and 15 mTorr indicated at the same current readings.
Table 4.2: Transmittance (%) and optical energy band gap (eV) at different sputtering
pressure
43


The conductivity and resistivity of the deposited ZnO thin films is shown
in Figure 4.7 and Figure 4.8 respectively that calculated from the Equation 4.3
below.

where is the resistivity, is the conductivity, V is the applied voltage, I is a
current measurement, t is the thin films thickness, w is the electrode width and l is
the length between electrodes. It can be seen from Figure 4.7 that the conductivity
of the thin films increases as the pressure increases. The conductivity and
resistivity calculated for sample of 15mTorr was to be about 2.00 x 10
-3
Sm
-1

and 4.9510
2
cm respectively. Table 4.3 shows the results of the electrical
properties.


o
1
= |
.
|
\
|
=
l
wt
I
V
..... (4.3)
ratio
44

Sputtering pressure
(mTorr)
Conductivity
(1 x 10
-3
Sm
-1
)
Resistivity
(1 x 10
2
m)
5 1.50 6.68
10 1.68 5.96
13 1.75 5.71
15 2.00 4.99
-3
Sm
-1
) versus sputtering pressure (mTorr)
-3
Sm
-1
2
m) at different sputtering
pressure
4 6 8 10 12 14 16
1.5
1.6
1.7
1.8
1.9
2.0
C
o
n
d
u
c
t
i
v
i
t
y

(
1

x

1
0
-
3

S
m
-
1
)
Conductivity
4 6 8 10 12 14 16
4.8
5.0
5.2
5.4
5.6
5.8
6.0
6.2
6.4
6.6
6.8
R
e
s
i
s
t
i
v
i
t
y

(
1

x

1
0
2

O
m
)
Resistivity
2
m) versus sputtering pressure (mTorr)
45

4.2 DEPOSITION OF ZNO THIN FILMS AT DIFFERENT OXYGEN RATIO
(AR:O
2
)

We also investigated the effects of oxygen, O
2
ratio to argon, Ar gas during the
deposition (gas flow rates between Ar and O
2
) were at 45:0, 45:5, 40:10, and 35:15 sccm
whereas in percentage were 90:0, 90:10, 80:20, and 70:30 % respectively using radio
frequency (RF) magnetron sputtering technique. O. Takai et.al in 1998 reported that the
preparation of oxide films such as inert gas, Ar are added to O
2
conventionally could be
effects on structural properties of ZnO films [41]. In this section, the characteristics of
deposited ZnO thin films which is structural and electrical at different O
2
ratio will be
reported and discussed.



The FESEM images for deposited ZnO thin films at different O
2
ratio are
shown in Figure 4.9 (a), (b), (c), and (d). These images revealed that the
morphology of ZnO thin films was changed with the increase of O
2
ratio. It can be
seen in Figure 4.9 (a) without O
2
ratio (0 %) or pure Ar, the deposited ZnO thin
films showed that the morphology was continuous and dense. According to N. H.
Al-Hardan et.al, the amount of the Zn atoms arrived on the substrate at low O
2

ratio was sufficiently high (due to the low sputtering yield of the oxygen gas)
[42]. However, at the higher O
2
ratio as shown in Figure 4.9 (d), the particles of
ZnO become agglomerate. In the other words, larger grains could be formed with
higher O
2
ratio. It is suggested that the introducing of oxygen not only decrease
the concentration of oxygen vacancy but also make the grain size larger has been
reported by Wang Zhaoyang and Hu Lizhong. The larger grain size means less
number of grain boundaries and the total amount of non-recombination centers
inside films [43].

46

(c)
(b)
(a)
47

4.2.1.2 XRD Patterns

The XRD pattern for deposited ZnO thin films under different O
2
ratio is
shown in Figure 4.10. This image shows that the crystallinity of ZnO thin films
was enhanced with the increasing percentage of O
2
. The oxygen gas concentration
increased from 0% to 30%, the preferential orientation in (002) plane decreased as
can be seen in Figure 4.10 and Table 4.4. It might due to the deterioration in the
degree of crystallinity of the thin films as the oxygen gas increases. Moreover, it
can also be observed that the peak intensity of the prepared film decreases
significantly with the increase in O
2
ratio has been reported by N. H. Al-Hardan
et.al. Besides that, the increase of full width at half maximum (FWHM) and peak
intensity indicates that smaller crystallite sizes are formed at a lower O
2
ratio [42].

(d)
Figure 4.9: FESEM images of deposited ZnO thin films at different O
2
ratio
(a) 0 %, (b) 10 %, (c) 20 %, and (d) 30 %

48

Percentage of O
2
(%) FWHM for (002)
0 0.28
10 0.19
20 0.20
30 -

4.2.1.3 Thickness and Deposition Rate

Figure 4.11 and 4.12 shows the thickness and deposition rate of the
deposited ZnO thin films as a function of O
2
ratio (Ar:O
2
) respectively. It is
observed that the thickness decreased with the change of O
2
ratio and followed by
the decreasing of the deposition rate to the deposited ZnO thin films. J.b.Lee et.al
reported that the deposition rate decreased when the concentration of oxygen gas
increased or the number of incident Ar atoms reduced and the higher sputtering
rate of ZnO target due to no O
2
introduced [44].
Figure 4.10: XRD spectra of ZnO films deposited under different O
2
ratio
Table 4.4: FWHM for (002) at different O
2
ratio
49

Percentage of O
2
(%) Thickness (nm) Deposition rate (nm/min)
0 523 8.72
10 506 8.43
20 320 5.33
30 297 4.95

Table 4.5: Thin films thickness (nm) and deposition rate (nm/min) at different O
2
ratio (%)
0 5 10 15 20 25 30
300
350
400
450
500
550
T
h
i
c
k
n
e
s
s

(
n
m
)
Oxygen Ratio (%)
Thickness
Figure 4.11: Relation between thin films thickness (nm) and O
2
ratio (%)

Figure 4.12: Relation between deposition rate (nm/min) and O
2
ratio (%)
0 5 10 15 20 25 30
4.50E-009
5.00E-009
5.50E-009
6.00E-009
6.50E-009
7.00E-009
7.50E-009
8.00E-009
8.50E-009
9.00E-009
D
e
p
o
s
i
t
i
o
n

R
a
t
e

(
n
m
/
m
i
n
)
Oxygen Ratio (%)
Deposition Rate
50


4.2.2.1 Current Voltage (I-V) Characteristics

Figure 4.13 showed the I-V characteristic of deposited ZnO thin films at
different O
2
ratio. The linear dependence of the graph for all percentage of O
2
indicates an Ohmic behavior of the gold (Au) contact with the thin films that
investigated using two-point probes. The highest and lowest current readings were
at 20 % and 30 % respectively. At 0 % and 10 % indicated the lower current
compared to 20 %.


The conductivity and resistivity of the deposited ZnO thin films is shown
in Figure 4.14 and Figure 4.15 respectively that calculated from the Equation 4.4.
It can be seen from Figure 4.14 that the conductivity of the thin films decreases as
the O
2
ratio increases while the resistivity showed the inverse of the conductivity.
The lowest conductivity and highest resistivity calculated at sample of 30 % was
to be about 1.89 x 10
-4
Sm
-1
and 5.28 x 10
3
cm respectively. The resistivity
Teflons substrate at different O
2
ratio

51

increases as the O
2
ratio increases due to the unnecessary O
2
atom that formed the
defects. In addition, the crystallinity quality of thin films deteriorated as the
oxygen content increased that supported by XRD result. Table 4.6 shows the
results of the electrical properties.

o
1
= |
.
|
\
|
=
l
wt
I
V
-3
Sm
-1
) versus O
2
ratio (%)
3
m) versus O
2
ratio (%)
0 5 10 15 20 25 30
0
1
2
3
4
5
6
R
e
s
i
s
t
i
v
i
t
y

(
1

x

1
0
3

O
m
)
Oxygen Ratio (%)
Resistivity
0 5 10 15 20 25 30
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
C
o
n
d
u
c
t
i
v
i
t
y

(
1

x

1
0
-
3

S
m
-
1
)
Oxygen Ratio (%)
Conductivity
..... (4.4)
ratio
52

Percentage of Ar and O
2

(%)
Conductivity
(1 x 10
-3
Sm
-1
)
Resistivity
(1 x 10
3
m)
5 4.00

0.25

10 3.67

0.27

13 0.20

5.05

15 0.19

5.28

-3
Sm
-1
3
m) at different sputtering
pressure
53

CHAPTER 5

CONCLUSION AND FUTURE RECOMMENDATION

This chapter describes about the conclusion from the results that observed in this
project which is for sputtering pressure and oxygen ratio (gas flow rate between Argon,
Ar and Oxygen, O
2)
. There have two sections which are conclusion for overall results at
section one and followed by the second section which is the future recommendation of
this project.

5.1 CONCLUSION

In conclusion, the main aim of this study was to prepare and characterize the
properties of ZnO thin films towards electronic devices application. This work reported
that the effects of the sputtering pressure and ratio of Ar and O
2
on the characteristics of
ZnO thin films deposited on Teflon substrate using RF magnetron sputtering. From the
first deposition result which is sputtering pressure, the structure of the deposited films
was found to be microstructure consisting of nanoparticles. The shape of the
nanoparticles change and the size is seen to expend with the increasing pressures whereas
the thickness decreases and followed by decreased of deposition rate. The transmittance
of the thin films showed no trend regarding to the pressure which ranged from 45% to
85%. The optical bang gap shows as little increment with the increasing pressure which
from 3.28 to 3.34 eV. The conductivity increases with the increasing sputtering pressure
with the highest conductivity and the lowest resistivity is 2.00 x 10
-3
Sm
-1
and 4.9510
2

cm respectively. Meanwhile for second deposition result which is O
2
ratio, the surface
morphology of deposited ZnO thin films was changed with the enhanced of the
introducing of oxygen. The particles of ZnO were more continuous and dense due to no
54

O
2
concentration whereas the particles become more agglomerate at the higher O
2

concentration. The crystalline structure of the thin films indicated that the little decrement
of preferential orientation in (002) plane or the deterioration in the degree of crystallinity
was changes according to the oxygen gas increased. There is no peak as shown at the
higher percentage of oxygen concentration at 30 %. The thickness thin films moving with
the deposition rate were decreases when the concentration of oxygen gas increased or the
number of incident Ar atoms reduced. The lower O
2
ratio at 0 % or no O
2
concentration
had the higher thickness and deposition rate which is 523 nm and 8.72 nm /min
respectively. Sample without O
2
flow rate has the highest conductivity and lowest
resistivity which is 4.00 x 10
-3
Sm
-1
and 0.2510
3
cm respectively due to rich Zn
rather than ZnO particles. Meanwhile, the higher O
2
concentration reveals the lowest
conductivity and highest resistivity which is 0.19 x 10
-3
Sm
-1
and 5.2810
3
cm
respectively. This supported by XRD result at higher O
2
concentration. The deposition of
ZnO thin films at different percentage of O
2
gave more effects compared to the deposited
ZnO thin films as shown in the results observed.

5.2 FUTURE RECOMMENDATION

In future development, the preparation of deposition ZnO thin films on flexible
substrate could be done directed towards further optimization of thin films that doped
with any others materials such as Aluminum, Al or Vanadium, V. In order to produce
better optical and electrical properties, the dopant process with certain materials need to
be done in conjuction with the ZnO thin films applications in future. According to Xiao-
jing Wang et.al (2011), the surface textured ZnO:Al (ZAO) thin films has attracted much
attention for application in thin solar cells due to its superior electrical, optical properties,
and more important property of light trapping [2]. The V doped ZnO gave more potential
to fabricate the optoelectronic devices due to the crystallites that grown in good quality
and it also had the larger energy band gap of the deposited ZnO thin films reported by
Liwei Wang et.al [44].

55

REFERENCES

[1] Guotong Du, Yuchun Chang, Yuantao Zhang, Yan Ma, Xiaotian Yang, Baijun
Zhao, Solid-State and Integrated Circuits Technology, 2004. Proceedings. 7th
International Conference on , vol.3, pp. 2361- 2365, 18-21 Oct. 2004.
[2] Xiao-jing Wang, Hang Wang, Wen-li Zhou, Gang-xian Li, Jun Yu, Materials
Letters, vol.65, Issue 13, pp.2039-2042, 15 July 2011.
[3] Ping-Feng Yang, Hua-Chiang Wen, Sheng-Rui Jian, Yi-Shao Lai, Sean Wu,
Rong-Sheng Chen, Microsystems, Packaging, Assembly and Circuits Technology,
2007. IMPACT 2007. International , vol.47, pp.184-188, 1-3 Oct. 2007.
[4] Hsin-Chiang You, Shiang-Jun Zhang, Shao-Hui Shieh, Chiou-Kou Tung,
Nano/Micro Engineered and MolecularSystems (NEMS), 2011 IEEE
International Conference on , vol.35, pp.780-783, 20-23 Feb. 2011.
[5] S. Shishiyanu, L. Chow, o. Lupan, T. Shishiyanu, 3, ECS Transactions 3 (9),
pp.65, 2006.
[6] M. D. J. Ooi, A.A. Aziz, M.J. Abdullah, Semiconductor Electronics, 2008. ICSE
2008. IEEE International Conference on, vol., no., pp.514-518, 25-27 Nov. 2008
[7] D. Sridevi, K. V. Rajendra, International Journal of Nanoechnology and
Application, vol.3, no.2, pp.43-48, 2009.
[8] R. Navamathavan, Chi Kyu Choi, Eun-Jeong Yang, Jae-Hong Lim, Dae-Kue
Hwang, Seong-Ju Park, Solid-State Electronics, vol.52, Issue 5, May 2008.
[9] Chien Cheng Liu, Meng Lun Wu, Kuang Chung Liu, Shih-Hua Hsiao, Yu Sheng
Chen, Gong-Ru Lin, JianJang Huang, Display Technology, Journal of , vol.5,
no.6, pp.192-197, June 2009.
[10] Li Gong, JianguoLu, ZhizhenYe, Solar Energy Materials and Solar Cells, vol.94,
Issue 7, pp. 1282-1285, July 2010.
[11] Y.C. Lin, M.Z. Chen, C.C. Kuo,W.T. Yen, Colloids and Surfaces A:
Physicochemical and Engineering Aspects, vol.337, issues 13, pp. 52-56, 1 April
2009.
56

[12] N.S.M. Sauki, S.H. Herman, M.R. Mahmood, Enabling Science and
Nanotechnology (ESciNano), 2012 International Conference on , vol., no., pp.1-2,
5-7 Jan. 2012.
[13] T. Higaki, T. Tachibana, Y. Kimura, T. Maemoto, S. Sasa, M. Inoue, Electron
Devices, Kansai, (IMFEDK), 2011 International Meeting for Future of , vol., no.,
pp.92-93, 19-20 May 2011.
[14] Woosuk Jun, Hong Tak Kim, Dongwook Kim, Chinho Park, Photovoltaic
Specialists Conference (PVSC), 2009 34th IEEE , vol., no., pp.000629-000631, 7-
12 June 2009.
[15] Jun-Sik Cho, Sanghun Baek, Jeong Chul Lee, Sang-Hyun Park, Jinsoo Song;
Kyung Hoon Yoon, Photovoltaic Specialists Conference (PVSC), 2010 35th IEEE
, vol., no., pp.001479-001482, 20-25 June 2010.
[16] C. Periasamy, P. Chakrabarti, R. Prakash, Advanced Optoelectronic Materials
and Devices, 2008. AOMD 2008. 2nd National Workshop on , vol., no., pp.75-83,
22-24 Dec. 2008.
[17] A.K. Sigdel, P.F. Ndione, Yi Ke, N.E. Widjonarko, J.D. Perkins, M.F.A.M. van
Hest, S.E. Shaheen, T. Gennett, D.S. Ginley, J.J. Berry, Photovoltaic Specialists
Conference (PVSC), 2010 35th IEEE , vol., no., pp.003270-003274, 20-25 June
2010.
[18] Yoon, S.H., Dong-Joo Kim, Applications of ferroelectrics, 2006. isaf '06. 15th
ieee international symposium on the , vol., no., pp.322-325, July 30 2006-Aug. 3
2006.
[19] (2/12/2011 1:27AM) Kenji Saith, Yuichiro Kuroki, Kanji Yasui, Masasuke
Takata and Tadashi Akahane, Azojomo Journal Materials Online (2007),
available: http://www.azom.com/journal-of-materials2007.aspx(2007).
[20] M. Irimia, A.P Rambu, G. Zodieru, I.I. Leonte, M. Purica, F. Iacomi,
Semiconductor Conference (CAS), 2011 International , vol.2, no., pp.287-290,
17-19 Oct. 2011.
[21] Dedong Han, Yi Wang, Shengdong Zhang, Lei Sun, Jinfeng Kang, Xiaoyan Liu,
Gang Du, Lifeng Liu, Ruqi Han, Solid-State and Integrated-Circuit Technology,
57

2008. ICSICT 2008. 9th International Conference on , vol., no., pp.982-984, 20-
23 Oct. 2008.
[22] S.J. Chey, Wei Liu, Min Yuan, Mitzi, D.B, Photovoltaic Specialists Conference
(PVSC), vol., no., pp.001149-001153, 7-12 June 2009.
[23] Arora, V.K. Dwivedi, P.J. George, V. Gupta, Physics of Semiconductor Devices,
2007. IWPSD 2007. International Workshop on , vol., no., pp.500-503, 16-20
Dec. 2007.
[24] Mu-Shiang Wu, A. Azuma, T. Shiosaki, A.Kawabata, Ultrasonics Symposium,
vol.36, No. 4, pp. 442-445, July 1989.
[25] Abd Halim, H. Hashim, M.Rusop, M. H. Mamat, A. S. Zoolfakar, Proceedings of
Applications, pp.123-124, 2008.
[26] Anderson Janotti and Chris G Van De Walle, Reports on Progress In Physics 72,
pp. 1-29, 2009.
[27] T. C. Collins and R. J. Hauenstein, Zinc Oxide Materials for Electronic and
Optoelectronic Device Applications, First Edition, pp. 1-28, 2011.
[28] Hadis Morkoc and Umit Ozgur, Zinc Oxide: Fundamentals, Materials and Device
Technology, pp. 1-76, 2009.
[29] Zhiyong Fan and Jia G. Lu, Zinc Oxide Nanostructures: Synthesis and Properties,
pp. 1-27, 2005.
[30] Zhong Lin Wang, Journal Of Physics: Condensed Matter 16, pp.1-30, 2004.
[31] Z.L. Pei, X.B. Zhang, G.P. Zhang, J. Gong, C. Sun, R.F. Huang, L.S. Wen, Thin
Solid Films 49, pp. 20 23, 2006.
[32] Yun-yan Liu, Yu-zhen Yuan, Xu-tuan Gao, Shi-shen Yan, Xin-zhong Cao, Gong-
xiang Wei, Materials Letters 61, Volume 61, Issues 2324, pp. 44634465, 2007.
[33] Walter Water, Sheng-Yuan Chu, Yung-Der Juang, Shih-Jeh Wu, Materials
Letters 57 pp. 9981003, 2002.
[34] Donald M. Mattox, handbook of Physical Vapor Deposition (PVD) Processing,
2
nd
Edition, pp. 2-23.
[35] (28/6/2011 5:27PM) Copyright 2001-2004 www.SiliconFarEast.com, available
athttp://www.siliconfareast.com/sputtering
58

[36] S. Flickyngerova, K. Shtereva, V. Stenova, D. Hasko, I. Novotny, V.Tvarozek, P.
Sutta, E. Vavrinsky, Applied Surface Science 254, pp. 36433647, 2008.
[37] G.A. Kumar, M.V.R. Reddy, K.N. Reddy, Nanoscience, Engineering and
Technology (ICONSET), 2011 International Conference on , vol., no., pp.56-60,
28-30 Nov. 2011.
[38] M.H. Mamat, M.Z. Sahdan, Z. Khusaimi, A. Zain Ahmed, S. Abdullah, M.
Rusop, Elsevier, Optical Material 32, pp. 696-699, 2010.
[39] (9/7/2012 4.04PM) Chiu-Lin Yao, Chiu-Lin Yao, Hin-Hsun Hsieh, Tzer-Perng
Chen, Tzer-Perng Chen, Semiconductor Device (2012), available at
http://www.faqs.org/patents/app/20120007135.
[40] V.P. Kutepova, D.A. Hall, Ultrasonics Symposium, 1998. Proceedings., 1998
IEEE , vol.1, no., pp.213-216 vol.1, 1998.
[41] O. Takai, M. Futsuhara, G. Shimizu, C.P. Lungu, J. Nozue, Thin Solid Films,
Volume 318, Issues 12, 15, pp. 117-119, April 1998.
[42] N. H. Al-Hardan, M. J. Abdullah, A. Abdul Aziz, H. Ahmad, M. Rashid, Physica
B: Condensed Matter, Vol. 405, No. 4., pp. 1081-1085, February 2010.
[43] Wang Zhaoyang, Hu Lizhong, Vacuum 83, pp.906909, 2009.
[44] Jae Bin Lee, Hyeong Joon Kim, Soo Gil Kim, Cheol Seong Hwang, Seong-Hyeon
Hong, Young Hwa Shin, Neung Hun Lee, Thin Solid Films, Volume 435, Issues
12, pp. 179-185, July 2003.
[45] Liwei Wang, Lijian Meng, V. Teixeira, F. Placido, Jinzhao Huang, Zheng Xu,
Nanoelectronics Conference, 2008. INEC 2008. 2nd IEEE International , vol.,
no., pp.10-14, 24-27 March 2008.

59

APPENDICES
60

APPENDIC A DATA FOR IV MEASUREMENT
DEPOSITION OF ZNO THIN FILMS AT DIFFERENT SPUTTERING
PRESSURE
Voltage 5mTorr R(a) 10mTorr R(a)
-10 -3.46E-07 2.89E+07 -3.28E-07 3.05E+07
-9.79798 -3.39E-07 2.89E+07 -3.21E-07 3.05E+07
-9.59596 -3.32E-07 2.89E+07 -3.14E-07 3.06E+07
-9.39394 -3.25E-07 2.89E+07 -3.08E-07 3.05E+07
-9.19192 -3.18E-07 2.89E+07 -3.01E-07 3.05E+07
-8.9899 -3.11E-07 2.89E+07 -2.94E-07 3.06E+07
-8.78788 -3.04E-07 2.89E+07 -2.88E-07 3.05E+07
-8.58586 -2.97E-07 2.89E+07 -2.81E-07 3.06E+07
-8.38384 -2.90E-07 2.89E+07 -2.75E-07 3.05E+07
-8.18182 -2.83E-07 2.89E+07 -2.68E-07 3.05E+07
-7.9798 -2.76E-07 2.89E+07 -2.61E-07 3.06E+07
-7.77778 -2.69E-07 2.89E+07 -2.55E-07 3.05E+07
-7.57576 -2.62E-07 2.89E+07 -2.48E-07 3.05E+07
-7.37374 -2.55E-07 2.89E+07 -2.42E-07 3.05E+07
-7.17172 -2.48E-07 2.89E+07 -2.35E-07 3.05E+07
-6.9697 -2.41E-07 2.89E+07 -2.28E-07 3.06E+07
-6.76768 -2.34E-07 2.89E+07 -2.22E-07 3.05E+07
-6.56566 -2.27E-07 2.89E+07 -2.15E-07 3.05E+07
-6.36364 -2.20E-07 2.89E+07 -2.08E-07 3.06E+07
-6.16162 -2.13E-07 2.89E+07 -2.02E-07 3.05E+07
-5.9596 -2.06E-07 2.89E+07 -1.95E-07 3.06E+07
-5.75758 -1.99E-07 2.89E+07 -1.89E-07 3.05E+07
-5.55556 -1.92E-07 2.89E+07 -1.82E-07 3.05E+07
-5.35354 -1.85E-07 2.89E+07 -1.75E-07 3.06E+07
-5.15152 -1.78E-07 2.89E+07 -1.69E-07 3.05E+07
-4.94949 -1.71E-07 2.89E+07 -1.62E-07 3.06E+07
-4.74747 -1.64E-07 2.89E+07 -1.56E-07 3.04E+07
-4.54545 -1.57E-07 2.90E+07 -1.49E-07 3.05E+07
-4.34343 -1.50E-07 2.90E+07 -1.42E-07 3.06E+07
-4.14141 -1.43E-07 2.90E+07 -1.36E-07 3.05E+07
-3.93939 -1.36E-07 2.90E+07 -1.29E-07 3.05E+07
-3.73737 -1.29E-07 2.90E+07 -1.23E-07 3.04E+07
-3.53535 -1.22E-07 2.90E+07 -1.16E-07 3.05E+07
-3.33333 -1.15E-07 2.90E+07 -1.09E-07 3.06E+07
-3.13131 -1.08E-07 2.90E+07 -1.03E-07 3.04E+07
-2.92929 -1.01E-07 2.90E+07 -9.61E-08 3.05E+07
61

-2.72727 -9.42E-08 2.90E+07 -8.95E-08 3.05E+07
-2.52525 -8.72E-08 2.90E+07 -8.28E-08 3.05E+07
-2.32323 -8.02E-08 2.90E+07 -7.62E-08 3.05E+07
-2.12121 -7.32E-08 2.90E+07 -6.96E-08 3.05E+07
-1.91919 -6.62E-08 2.90E+07 -6.30E-08 3.05E+07
-1.71717 -5.92E-08 2.90E+07 -5.64E-08 3.04E+07
-1.51515 -5.22E-08 2.90E+07 -4.98E-08 3.04E+07
-1.31313 -4.52E-08 2.91E+07 -4.32E-08 3.04E+07
-1.11111 -3.82E-08 2.91E+07 -3.66E-08 3.04E+07
-0.90909 -3.12E-08 2.91E+07 -2.99E-08 3.04E+07
-0.70707 -2.42E-08 2.92E+07 -2.33E-08 3.03E+07
-0.50505 -1.72E-08 2.94E+07 -1.67E-08 3.02E+07
-0.30303 -1.02E-08 2.97E+07 -1.01E-08 3.00E+07
-0.10101 -3.23E-09 3.13E+07 -3.49E-09 2.89E+07
0.10101 3.76E-09 2.69E+07 3.13E-09 3.23E+07
0.30303 1.08E-08 2.81E+07 9.74E-09 3.11E+07
0.50505 1.78E-08 2.84E+07 1.64E-08 3.08E+07
0.70707 2.48E-08 2.85E+07 2.30E-08 3.07E+07
0.90909 3.17E-08 2.87E+07 2.96E-08 3.07E+07
1.11111 3.87E-08 2.87E+07 3.62E-08 3.07E+07
1.31313 4.57E-08 2.87E+07 4.28E-08 3.07E+07
1.51515 5.27E-08 2.88E+07 4.94E-08 3.07E+07
1.71717 5.97E-08 2.88E+07 5.60E-08 3.07E+07
1.91919 6.67E-08 2.88E+07 6.26E-08 3.07E+07
2.12121 7.37E-08 2.88E+07 6.93E-08 3.06E+07
2.32323 8.07E-08 2.88E+07 7.59E-08 3.06E+07
2.52525 8.77E-08 2.88E+07 8.25E-08 3.06E+07
2.72727 9.47E-08 2.88E+07 8.91E-08 3.06E+07
2.92929 1.02E-07 2.87E+07 9.57E-08 3.06E+07
3.13131 1.09E-07 2.87E+07 1.02E-07 3.07E+07
3.33333 1.16E-07 2.87E+07 1.09E-07 3.06E+07
3.53535 1.23E-07 2.87E+07 1.16E-07 3.05E+07
3.73737 1.30E-07 2.87E+07 1.22E-07 3.06E+07
3.93939 1.37E-07 2.88E+07 1.29E-07 3.05E+07
4.14141 1.44E-07 2.88E+07 1.35E-07 3.07E+07
4.34343 1.51E-07 2.88E+07 1.42E-07 3.06E+07
4.54545 1.58E-07 2.88E+07 1.49E-07 3.05E+07
4.74747 1.65E-07 2.88E+07 1.55E-07 3.06E+07
4.94949 1.72E-07 2.88E+07 1.62E-07 3.06E+07
5.15152 1.79E-07 2.88E+07 1.68E-07 3.07E+07
5.35354 1.86E-07 2.88E+07 1.75E-07 3.06E+07
62

5.55556 1.93E-07 2.88E+07 1.82E-07 3.05E+07
5.75758 2.00E-07 2.88E+07 1.88E-07 3.06E+07
5.9596 2.07E-07 2.88E+07 1.95E-07 3.06E+07
6.16162 2.14E-07 2.88E+07 2.02E-07 3.05E+07
6.36364 2.21E-07 2.88E+07 2.08E-07 3.06E+07
6.56566 2.28E-07 2.88E+07 2.15E-07 3.05E+07
6.76768 2.35E-07 2.88E+07 2.21E-07 3.06E+07
6.9697 2.42E-07 2.88E+07 2.28E-07 3.06E+07
7.17172 2.49E-07 2.88E+07 2.35E-07 3.05E+07
7.37374 2.56E-07 2.88E+07 2.41E-07 3.06E+07
7.57576 2.63E-07 2.88E+07 2.48E-07 3.05E+07
7.77778 2.70E-07 2.88E+07 2.54E-07 3.06E+07
7.9798 2.77E-07 2.88E+07 2.61E-07 3.06E+07
8.18182 2.84E-07 2.88E+07 2.68E-07 3.05E+07
8.38384 2.91E-07 2.88E+07 2.74E-07 3.06E+07
8.58586 2.98E-07 2.88E+07 2.81E-07 3.06E+07
8.78788 3.05E-07 2.88E+07 2.87E-07 3.06E+07
8.9899 3.12E-07 2.88E+07 2.94E-07 3.06E+07
9.19192 3.19E-07 2.88E+07 3.01E-07 3.05E+07
9.39394 3.26E-07 2.88E+07 3.07E-07 3.06E+07
9.59596 3.33E-07 2.88E+07 3.14E-07 3.06E+07
9.79798 3.40E-07 2.88E+07 3.21E-07 3.05E+07
10 3.47E-07 2.88E+07 3.27E-07 3.06E+07

2.89E+07

3.05E+07

Voltage 13mTorr R(a) 15mTorr R(a)
-10 -3.17E-07 3.15E+07 -3.28E-07 3.05E+07
-9.79798 -3.11E-07 3.15E+07 -3.21E-07 3.05E+07
-9.59596 -3.04E-07 3.16E+07 -3.14E-07 3.06E+07
-9.39394 -2.98E-07 3.15E+07 -3.08E-07 3.05E+07
-9.19192 -2.92E-07 3.15E+07 -3.01E-07 3.05E+07
-8.9899 -2.85E-07 3.15E+07 -2.95E-07 3.05E+07
-8.78788 -2.79E-07 3.15E+07 -2.88E-07 3.05E+07
-8.58586 -2.72E-07 3.16E+07 -2.81E-07 3.06E+07
-8.38384 -2.66E-07 3.15E+07 -2.75E-07 3.05E+07
-8.18182 -2.59E-07 3.16E+07 -2.68E-07 3.05E+07
-7.9798 -2.53E-07 3.15E+07 -2.62E-07 3.05E+07
-7.77778 -2.47E-07 3.15E+07 -2.55E-07 3.05E+07
-7.57576 -2.40E-07 3.16E+07 -2.48E-07 3.05E+07
-7.37374 -2.34E-07 3.15E+07 -2.42E-07 3.05E+07
-7.17172 -2.27E-07 3.16E+07 -2.35E-07 3.05E+07
63

-6.9697 -2.21E-07 3.15E+07 -2.28E-07 3.06E+07
-6.76768 -2.15E-07 3.15E+07 -2.22E-07 3.05E+07
-6.56566 -2.08E-07 3.16E+07 -2.15E-07 3.05E+07
-6.36364 -2.02E-07 3.15E+07 -2.09E-07 3.04E+07
-6.16162 -1.95E-07 3.16E+07 -2.02E-07 3.05E+07
-5.9596 -1.89E-07 3.15E+07 -1.95E-07 3.06E+07
-5.75758 -1.82E-07 3.16E+07 -1.89E-07 3.05E+07
-5.55556 -1.76E-07 3.16E+07 -1.82E-07 3.05E+07
-5.35354 -1.70E-07 3.15E+07 -1.76E-07 3.04E+07
-5.15152 -1.63E-07 3.16E+07 -1.69E-07 3.05E+07
-4.94949 -1.57E-07 3.15E+07 -1.62E-07 3.06E+07
-4.74747 -1.50E-07 3.16E+07 -1.56E-07 3.04E+07
-4.54545 -1.44E-07 3.16E+07 -1.49E-07 3.05E+07
-4.34343 -1.37E-07 3.17E+07 -1.43E-07 3.04E+07
-4.14141 -1.31E-07 3.16E+07 -1.36E-07 3.05E+07
-3.93939 -1.25E-07 3.15E+07 -1.29E-07 3.05E+07
-3.73737 -1.18E-07 3.17E+07 -1.23E-07 3.04E+07
-3.53535 -1.12E-07 3.16E+07 -1.16E-07 3.05E+07
-3.33333 -1.05E-07 3.17E+07 -1.09E-07 3.06E+07
-3.13131 -9.89E-08 3.17E+07 -1.03E-07 3.04E+07
-2.92929 -9.25E-08 3.17E+07 -9.62E-08 3.05E+07
-2.72727 -8.61E-08 3.17E+07 -8.96E-08 3.04E+07
-2.52525 -7.96E-08 3.17E+07 -8.30E-08 3.04E+07
-2.32323 -7.32E-08 3.17E+07 -7.64E-08 3.04E+07
-2.12121 -6.68E-08 3.18E+07 -6.98E-08 3.04E+07
-1.91919 -6.04E-08 3.18E+07 -6.32E-08 3.04E+07
-1.71717 -5.39E-08 3.19E+07 -5.66E-08 3.03E+07
-1.51515 -4.75E-08 3.19E+07 -4.99E-08 3.04E+07
-1.31313 -4.11E-08 3.19E+07 -4.33E-08 3.03E+07
-1.11111 -3.47E-08 3.20E+07 -3.67E-08 3.03E+07
-0.90909 -2.82E-08 3.22E+07 -3.01E-08 3.02E+07
-0.70707 -2.18E-08 3.24E+07 -2.35E-08 3.01E+07
-0.50505 -1.54E-08 3.28E+07 -1.69E-08 2.99E+07
-0.30303 -8.97E-09 3.38E+07 -1.03E-08 2.94E+07
-0.10101 -2.54E-09 3.98E+07 -3.66E-09 2.76E+07
0.10101 3.88E-09 2.60E+07 2.95E-09 3.42E+07
0.30303 1.03E-08 2.94E+07 9.56E-09 3.17E+07
0.50505 1.67E-08 3.02E+07 1.62E-08 3.12E+07
0.70707 2.32E-08 3.05E+07 2.28E-08 3.10E+07
0.90909 2.96E-08 3.07E+07 2.94E-08 3.09E+07
1.11111 3.60E-08 3.09E+07 3.60E-08 3.09E+07
64

1.31313 4.24E-08 3.10E+07 4.26E-08 3.08E+07
1.51515 4.88E-08 3.10E+07 4.92E-08 3.08E+07
1.71717 5.53E-08 3.11E+07 5.58E-08 3.08E+07
1.91919 6.17E-08 3.11E+07 6.25E-08 3.07E+07
2.12121 6.81E-08 3.11E+07 6.91E-08 3.07E+07
2.32323 7.45E-08 3.12E+07 7.57E-08 3.07E+07
2.52525 8.10E-08 3.12E+07 8.23E-08 3.07E+07
2.72727 8.74E-08 3.12E+07 8.89E-08 3.07E+07
2.92929 9.38E-08 3.12E+07 9.55E-08 3.07E+07
3.13131 1.00E-07 3.13E+07 1.02E-07 3.07E+07
3.33333 1.07E-07 3.12E+07 1.09E-07 3.06E+07
3.53535 1.13E-07 3.13E+07 1.15E-07 3.07E+07
3.73737 1.20E-07 3.11E+07 1.22E-07 3.06E+07
3.93939 1.26E-07 3.13E+07 1.29E-07 3.05E+07
4.14141 1.32E-07 3.14E+07 1.35E-07 3.07E+07
4.34343 1.39E-07 3.12E+07 1.42E-07 3.06E+07
4.54545 1.45E-07 3.13E+07 1.48E-07 3.07E+07
4.74747 1.52E-07 3.12E+07 1.55E-07 3.06E+07
4.94949 1.58E-07 3.13E+07 1.62E-07 3.06E+07
5.15152 1.64E-07 3.14E+07 1.68E-07 3.07E+07
5.35354 1.71E-07 3.13E+07 1.75E-07 3.06E+07
5.55556 1.77E-07 3.14E+07 1.81E-07 3.07E+07
5.75758 1.84E-07 3.13E+07 1.88E-07 3.06E+07
5.9596 1.90E-07 3.14E+07 1.95E-07 3.06E+07
6.16162 1.97E-07 3.13E+07 2.01E-07 3.07E+07
6.36364 2.03E-07 3.13E+07 2.08E-07 3.06E+07
6.56566 2.09E-07 3.14E+07 2.15E-07 3.05E+07
6.76768 2.16E-07 3.13E+07 2.21E-07 3.06E+07
6.9697 2.22E-07 3.14E+07 2.28E-07 3.06E+07
7.17172 2.29E-07 3.13E+07 2.34E-07 3.06E+07
7.37374 2.35E-07 3.14E+07 2.41E-07 3.06E+07
7.57576 2.42E-07 3.13E+07 2.48E-07 3.05E+07
7.77778 2.48E-07 3.14E+07 2.54E-07 3.06E+07
7.9798 2.54E-07 3.14E+07 2.61E-07 3.06E+07
8.18182 2.61E-07 3.13E+07 2.67E-07 3.06E+07
8.38384 2.67E-07 3.14E+07 2.74E-07 3.06E+07
8.58586 2.74E-07 3.13E+07 2.81E-07 3.06E+07
8.78788 2.80E-07 3.14E+07 2.87E-07 3.06E+07
8.9899 2.87E-07 3.13E+07 2.94E-07 3.06E+07
9.19192 2.93E-07 3.14E+07 3.00E-07 3.06E+07
9.39394 2.99E-07 3.14E+07 3.07E-07 3.06E+07
65

9.59596 3.06E-07 3.14E+07 3.14E-07 3.06E+07
9.79798 3.12E-07 3.14E+07 3.20E-07 3.06E+07
10 3.19E-07 3.13E+07 3.27E-07 3.06E+07

3.15E+07

3.06E+07

DEPOSITION OF ZNO THIN FILMS AT DIFFERENT OXYGEN RATIO
(AR:O2)
Voltage Current 0% R(d) Voltage Current 10% R(d)
-2.09E-06 1.29E-10 -1.62E+04 -1.00E-05 -1.58E-10 6.37E+04
1.00E-01 -6.74E-11 -1.48E+09 1.00E-01 5.51E-11 1.81E+09
2.00E-01 2.27E-10 8.80E+08 2.00E-01 1.24E-10 1.61E+09
3.00E-01 2.43E-10 1.23E+09 3.00E-01 2.35E-10 1.27E+09
4.00E-01 2.12E-10 1.88E+09 4.00E-01 5.38E-10 7.43E+08
4.99E-01 8.03E-10 6.22E+08 4.99E-01 8.60E-10 5.81E+08
5.99E-01 6.11E-10 9.82E+08 5.99E-01 8.02E-10 7.47E+08
6.99E-01 1.09E-09 6.40E+08 6.99E-01 1.12E-09 6.25E+08
7.99E-01 1.53E-09 5.22E+08 7.99E-01 1.36E-09 5.87E+08
8.99E-01 1.59E-09 5.67E+08 8.99E-01 1.82E-09 4.95E+08
9.99E-01 1.97E-09 5.07E+08 9.99E-01 2.17E-09 4.61E+08
1.10E+00 2.24E-09 4.90E+08 1.10E+00 2.26E-09 4.86E+08
1.20E+00 2.66E-09 4.51E+08 1.20E+00 2.57E-09 4.67E+08
1.30E+00 2.73E-09 4.75E+08 1.30E+00 2.96E-09 4.39E+08
1.40E+00 3.49E-09 4.01E+08 1.40E+00 3.50E-09 4.00E+08
1.50E+00 3.58E-09 4.19E+08 1.50E+00 3.68E-09 4.07E+08
1.60E+00 3.52E-09 4.55E+08 1.60E+00 3.69E-09 4.33E+08
1.70E+00 4.23E-09 4.01E+08 1.70E+00 4.41E-09 3.85E+08
1.80E+00 4.09E-09 4.40E+08 1.80E+00 4.88E-09 3.68E+08
1.90E+00 5.42E-09 3.51E+08 1.90E+00 5.54E-09 3.43E+08
2.00E+00 4.80E-09 4.17E+08 2.00E+00 4.90E-09 4.08E+08
2.10E+00 5.15E-09 4.08E+08 2.10E+00 5.45E-09 3.86E+08
2.20E+00 7.23E-09 3.04E+08 2.20E+00 7.31E-09 3.01E+08
2.30E+00 6.16E-09 3.74E+08 2.30E+00 7.49E-09 3.07E+08
2.40E+00 7.53E-09 3.19E+08 2.40E+00 8.09E-09 2.97E+08
2.50E+00 8.54E-09 2.93E+08 2.50E+00 7.53E-09 3.32E+08
2.60E+00 8.44E-09 3.08E+08 2.60E+00 9.11E-09 2.86E+08
2.70E+00 1.13E-08 2.38E+08 2.70E+00 1.21E-08 2.23E+08
2.80E+00 1.05E-08 2.68E+08 2.80E+00 1.33E-08 2.11E+08
2.90E+00 1.02E-08 2.85E+08 2.90E+00 1.10E-08 2.64E+08
3.00E+00 1.45E-08 2.06E+08 3.00E+00 1.40E-08 2.15E+08
66

Voltage Current 2% R(a) Voltage Current 30% R(a)
-2.51E-06 -1.12E-10 2.25E+04 -6.28E-06 2.59E-12 -2.42E+06
1.00E-01 1.94E-10 5.15E+08 1.00E-01 3.06E-11 3.27E+09
2.00E-01 7.50E-11 2.67E+09 2.00E-01 1.31E-10 1.52E+09
3.00E-01 3.82E-10 7.86E+08 3.00E-01 3.34E-10 8.98E+08
4.00E-01 3.98E-10 1.00E+09 4.00E-01 4.06E-10 9.85E+08
4.99E-01 7.31E-10 6.83E+08 4.99E-01 6.52E-10 7.66E+08
5.99E-01 1.12E-09 5.34E+08 5.99E-01 7.20E-10 8.33E+08
6.99E-01 1.42E-09 4.92E+08 6.99E-01 9.97E-10 7.01E+08
7.99E-01 1.37E-09 5.83E+08 7.99E-01 1.51E-09 5.30E+08
8.99E-01 1.80E-09 4.98E+08 8.99E-01 1.58E-09 5.69E+08
9.99E-01 2.05E-09 4.87E+08 9.99E-01 1.97E-09 5.07E+08
1.10E+00 2.16E-09 5.08E+08 1.10E+00 2.12E-09 5.18E+08
1.20E+00 2.92E-09 4.10E+08 1.20E+00 2.78E-09 4.31E+08
1.30E+00 2.71E-09 4.79E+08 1.30E+00 2.82E-09 4.60E+08
1.40E+00 3.19E-09 4.39E+08 1.40E+00 3.42E-09 4.09E+08
1.50E+00 3.25E-09 4.61E+08 1.50E+00 3.57E-09 4.20E+08
1.60E+00 4.18E-09 3.83E+08 1.60E+00 3.71E-09 4.31E+08
1.70E+00 3.99E-09 4.26E+08 1.70E+00 4.63E-09 3.67E+08
3.10E+00 1.80E-08 1.72E+08 3.10E+00 1.10E-08 2.82E+08
3.20E+00 1.15E-08 2.78E+08 3.20E+00 1.54E-08 2.08E+08
3.30E+00 1.29E-08 2.56E+08 3.30E+00 2.31E-08 1.43E+08
3.40E+00 2.79E-08 1.22E+08 3.40E+00 1.61E-08 2.11E+08
3.50E+00 1.54E-08 2.27E+08 3.50E+00 1.69E-08 2.07E+08
3.60E+00 2.32E-08 1.55E+08 3.60E+00 2.70E-08 1.33E+08
3.70E+00 1.89E-08 1.96E+08 3.70E+00 2.86E-08 1.29E+08
3.80E+00 3.24E-08 1.17E+08 3.80E+00 3.08E-08 1.23E+08
3.90E+00 2.86E-08 1.36E+08 3.90E+00 3.30E-08 1.18E+08
4.00E+00 2.69E-08 1.49E+08 4.00E+00 3.94E-08 1.02E+08
4.10E+00 5.41E-08 7.57E+07 4.10E+00 4.49E-08 9.12E+07
4.20E+00 4.62E-08 9.10E+07 4.20E+00 5.95E-08 7.06E+07
4.30E+00 4.71E-08 9.12E+07 4.30E+00 4.08E-08 1.05E+08
4.40E+00 4.43E-08 9.93E+07 4.40E+00 4.60E-08 9.57E+07
4.50E+00 5.85E-08 7.70E+07 4.50E+00 9.77E-08 4.61E+07
4.60E+00 5.90E-08 7.80E+07 4.60E+00 4.90E-08 9.38E+07
4.70E+00 8.60E-08 5.47E+07 4.70E+00 8.46E-08 5.56E+07
4.80E+00 1.21E-07 3.98E+07 4.80E+00 7.36E-08 6.52E+07
4.90E+00 1.26E-07 3.88E+07 4.90E+00 1.12E-07 4.36E+07
5.00E+00 7.13E-08 7.01E+07 5.00E+00 7.30E-08 6.85E+07

3.17E+08 3.58E+08
67

1.80E+00 4.80E-09 3.75E+08 1.80E+00 4.92E-09 3.66E+08
1.90E+00 5.37E-09 3.54E+08 1.90E+00 5.11E-09 3.72E+08
2.00E+00 5.54E-09 3.61E+08 2.00E+00 5.53E-09 3.62E+08
2.10E+00 5.90E-09 3.56E+08 2.10E+00 6.69E-09 3.14E+08
2.20E+00 6.25E-09 3.52E+08 2.20E+00 5.90E-09 3.73E+08
2.30E+00 7.17E-09 3.21E+08 2.30E+00 6.32E-09 3.64E+08
2.40E+00 7.33E-09 3.27E+08 2.40E+00 8.52E-09 2.82E+08
2.50E+00 8.14E-09 3.07E+08 2.50E+00 9.68E-09 2.58E+08
2.60E+00 9.14E-09 2.85E+08 2.60E+00 7.59E-09 3.43E+08
2.70E+00 1.03E-08 2.63E+08 2.70E+00 9.83E-09 2.75E+08
2.80E+00 1.11E-08 2.51E+08 2.80E+00 1.32E-08 2.13E+08
2.90E+00 9.69E-09 2.99E+08 2.90E+00 1.01E-08 2.88E+08
3.00E+00 1.69E-08 1.78E+08 3.00E+00 1.01E-08 2.96E+08
3.10E+00 1.11E-08 2.78E+08 3.10E+00 1.56E-08 1.99E+08
3.20E+00 1.56E-08 2.05E+08 3.20E+00 1.51E-08 2.12E+08
3.30E+00 1.88E-08 1.75E+08 3.30E+00 2.43E-08 1.36E+08
3.40E+00 1.86E-08 1.83E+08 3.40E+00 1.94E-08 1.76E+08
3.50E+00 2.13E-08 1.64E+08 3.50E+00 2.03E-08 1.72E+08
3.60E+00 2.26E-08 1.59E+08 3.60E+00 2.13E-08 1.69E+08
3.70E+00 3.00E-08 1.23E+08 3.70E+00 3.73E-08 9.93E+07
3.80E+00 2.45E-08 1.55E+08 3.80E+00 2.92E-08 1.30E+08
3.90E+00 3.87E-08 1.01E+08 3.90E+00 4.88E-08 7.99E+07
4.00E+00 3.28E-08 1.22E+08 4.00E+00 2.68E-08 1.49E+08
4.10E+00 7.00E-08 5.85E+07 4.10E+00 3.29E-08 1.25E+08
4.20E+00 5.24E-08 8.02E+07 4.20E+00 7.94E-08 5.29E+07
4.30E+00 3.84E-08 1.12E+08 4.30E+00 3.80E-08 1.13E+08
4.40E+00 5.54E-08 7.94E+07 4.40E+00 4.11E-08 1.07E+08
4.50E+00 5.26E-08 8.56E+07 4.50E+00 9.52E-08 4.73E+07
4.60E+00 5.27E-08 8.73E+07 4.60E+00 5.87E-08 7.84E+07
4.70E+00 9.64E-08 4.88E+07 4.70E+00 1.00E-07 4.70E+07
4.80E+00 1.21E-07 3.95E+07 4.80E+00 5.99E-08 8.02E+07
4.90E+00 1.30E-07 3.78E+07 4.90E+00 7.79E-08 6.29E+07
5.00E+00 8.74E-08 5.72E+07 5.00E+00 8.40E-08 5.95E+07

3.48E+08 3.92E+08

68

APPENDIC B DATA FOR OPTICAL ENERGY BAND GAP
DEPOSITION OF ZNO THIN FILMS AT DIFFERENT SPUTTERING
PRESSURE

Absorption
Coefficient,
Photon Energy,
hv
5mTorr 10mTorr 13mTorr 15mTorr
1.51E+06
1.55088 6.17E+10 3.44E+12 5.94E+10 5.45E+12
1.50E+06
1.55282 6.53E+10 3.45E+12 6.06E+10 5.45E+12
1.50E+06
1.55476 6.88E+10 3.46E+12 6.26E+10 5.46E+12
1.51E+06
1.55671 7.38E+10 3.44E+12 6.48E+10 5.52E+12
1.51E+06
1.55867 7.85E+10 3.47E+12 6.50E+10 5.51E+12
1.50E+06
1.56063 7.82E+10 3.45E+12 6.25E+10 5.48E+12
1.50E+06
1.56259 8.15E+10 3.46E+12 6.39E+10 5.47E+12
1.50E+06
1.56457 8.46E+10 3.48E+12 6.22E+10 5.49E+12
1.50E+06
1.56654 8.81E+10 3.48E+12 6.00E+10 5.49E+12
1.49E+06
1.56852 9.17E+10 3.46E+12 5.73E+10 5.47E+12
1.49E+06
1.57051 9.66E+10 3.46E+12 5.55E+10 5.48E+12
1.49E+06
1.5725 1.01E+11 3.48E+12 5.73E+10 5.51E+12
1.49E+06
1.57449 1.02E+11 3.48E+12 5.54E+10 5.50E+12
1.49E+06
1.57649 1.07E+11 3.49E+12 5.49E+10 5.49E+12
1.48E+06
1.5785 1.08E+11 3.48E+12 5.25E+10 5.45E+12
1.48E+06
1.58051 1.09E+11 3.48E+12 4.89E+10 5.45E+12
1.47E+06
1.58253 1.12E+11 3.49E+12 4.88E+10 5.43E+12
1.47E+06
1.58455 1.14E+11 3.48E+12 4.65E+10 5.40E+12
1.46E+06
1.58657 1.17E+11 3.49E+12 4.65E+10 5.40E+12
1.46E+06
1.5886 1.19E+11 3.49E+12 4.45E+10 5.37E+12
1.45E+06
1.59064 1.23E+11 3.48E+12 4.44E+10 5.34E+12
1.45E+06
1.59268 1.28E+11 3.48E+12 4.46E+10 5.33E+12
1.45E+06
1.59473 1.33E+11 3.46E+12 4.36E+10 5.34E+12
1.44E+06
1.59678 1.33E+11 3.46E+12 4.16E+10 5.31E+12
1.44E+06
1.59884 1.36E+11 3.46E+12 4.13E+10 5.29E+12
1.44E+06
1.6009 1.37E+11 3.47E+12 4.21E+10 5.29E+12
1.43E+06
1.60297 1.37E+11 3.47E+12 4.22E+10 5.28E+12
1.43E+06
1.60505 1.43E+11 3.46E+12 4.03E+10 5.27E+12
1.43E+06
1.60712 1.46E+11 3.46E+12 4.11E+10 5.27E+12
1.43E+06
1.60921 1.52E+11 3.47E+12 4.25E+10 5.28E+12
1.43E+06
1.6113 1.57E+11 3.48E+12 4.08E+10 5.30E+12
1.43E+06
1.61339 1.61E+11 3.48E+12 3.96E+10 5.29E+12
1.42E+06
1.6155 1.62E+11 3.46E+12 3.72E+10 5.28E+12
1.42E+06
1.6176 1.68E+11 3.48E+12 3.86E+10 5.30E+12
69

1.42E+06
1.61971 1.72E+11 3.48E+12 3.73E+10 5.27E+12
1.42E+06
1.62183 1.75E+11 3.49E+12 3.72E+10 5.28E+12
1.42E+06
1.62395 1.78E+11 3.49E+12 3.53E+10 5.30E+12
1.42E+06
1.62608 1.80E+11 3.49E+12 3.29E+10 5.30E+12
1.41E+06
1.62822 1.83E+11 3.50E+12 3.16E+10 5.30E+12
1.41E+06
1.63036 1.91E+11 3.49E+12 3.11E+10 5.30E+12
1.41E+06
1.6325 1.93E+11 3.50E+12 3.11E+10 5.29E+12
1.41E+06
1.63465 2.01E+11 3.52E+12 3.00E+10 5.30E+12
1.41E+06
1.63681 2.06E+11 3.53E+12 2.91E+10 5.31E+12
1.41E+06
1.63897 2.11E+11 3.55E+12 2.97E+10 5.31E+12
1.40E+06
1.64114 2.18E+11 3.57E+12 2.88E+10 5.32E+12
1.41E+06
1.64331 2.24E+11 3.58E+12 2.82E+10 5.33E+12
1.40E+06
1.64549 2.28E+11 3.59E+12 2.78E+10 5.31E+12
1.40E+06
1.64768 2.31E+11 3.61E+12 2.82E+10 5.31E+12
1.40E+06
1.64987 2.36E+11 3.63E+12 2.73E+10 5.32E+12
1.40E+06
1.65206 2.44E+11 3.64E+12 2.63E+10 5.32E+12
1.39E+06
1.65427 2.47E+11 3.65E+12 2.46E+10 5.31E+12
1.39E+06
1.65648 2.49E+11 3.64E+12 2.34E+10 5.28E+12
1.38E+06
1.65869 2.50E+11 3.65E+12 2.22E+10 5.27E+12
1.38E+06
1.66091 2.56E+11 3.69E+12 2.23E+10 5.26E+12
1.38E+06
1.66314 2.60E+11 3.71E+12 2.23E+10 5.26E+12
1.38E+06
1.66537 2.63E+11 3.71E+12 2.27E+10 5.25E+12
1.38E+06
1.66761 2.68E+11 3.73E+12 2.23E+10 5.27E+12
1.37E+06
1.66985 2.69E+11 3.74E+12 2.18E+10 5.25E+12
1.37E+06
1.6721 2.72E+11 3.74E+12 2.18E+10 5.24E+12
1.37E+06
1.67436 2.72E+11 3.75E+12 2.19E+10 5.24E+12
1.36E+06
1.67662 2.87E+11 3.78E+12 2.46E+10 5.19E+12
1.36E+06
1.67889 2.90E+11 3.81E+12 2.49E+10 5.20E+12
1.35E+06
1.68117 2.94E+11 3.82E+12 2.44E+10 5.18E+12
1.35E+06
1.68345 2.96E+11 3.85E+12 2.34E+10 5.20E+12
1.35E+06
1.68573 3.01E+11 3.86E+12 2.35E+10 5.19E+12
1.35E+06
1.68803 3.02E+11 3.87E+12 2.38E+10 5.19E+12
1.35E+06
1.69033 3.04E+11 3.87E+12 2.24E+10 5.17E+12
1.34E+06
1.69263 3.07E+11 3.87E+12 2.24E+10 5.16E+12
1.34E+06
1.69495 3.10E+11 3.89E+12 2.23E+10 5.16E+12
1.34E+06
1.69726 3.10E+11 3.89E+12 2.21E+10 5.15E+12
1.34E+06
1.69959 3.15E+11 3.91E+12 2.12E+10 5.15E+12
1.33E+06
1.70192 3.18E+11 3.93E+12 2.18E+10 5.16E+12
1.33E+06
1.70426 3.18E+11 3.95E+12 2.24E+10 5.14E+12
1.33E+06
1.7066 3.25E+11 3.99E+12 2.35E+10 5.19E+12
1.33E+06
1.70895 3.29E+11 4.01E+12 2.30E+10 5.19E+12
70

1.34E+06
1.71131 3.36E+11 4.05E+12 2.49E+10 5.23E+12
1.33E+06
1.71367 3.40E+11 4.06E+12 2.53E+10 5.22E+12
1.33E+06
1.71604 3.42E+11 4.07E+12 2.43E+10 5.21E+12
1.33E+06
1.71842 3.46E+11 4.09E+12 2.52E+10 5.21E+12
1.32E+06
1.7208 3.49E+11 4.11E+12 2.58E+10 5.20E+12
1.32E+06
1.72319 3.52E+11 4.14E+12 2.64E+10 5.21E+12
1.32E+06
1.72559 3.59E+11 4.16E+12 2.71E+10 5.23E+12
1.32E+06
1.72799 3.63E+11 4.19E+12 2.81E+10 5.22E+12
1.32E+06
1.7304 3.70E+11 4.22E+12 3.04E+10 5.25E+12
1.32E+06
1.73282 3.73E+11 4.23E+12 2.92E+10 5.24E+12
1.32E+06
1.73525 3.79E+11 4.26E+12 3.07E+10 5.24E+12
1.32E+06
1.73768 3.83E+11 4.29E+12 3.20E+10 5.25E+12
1.32E+06
1.74011 3.89E+11 4.32E+12 3.34E+10 5.26E+12
1.32E+06
1.74256 3.89E+11 4.33E+12 3.17E+10 5.27E+12
1.31E+06
1.74501 3.86E+11 4.34E+12 3.04E+10 5.25E+12
1.31E+06
1.74747 3.89E+11 4.36E+12 3.19E+10 5.26E+12
1.31E+06
1.74993 3.90E+11 4.38E+12 3.25E+10 5.26E+12
1.31E+06
1.7524 3.92E+11 4.40E+12 3.29E+10 5.26E+12
1.31E+06
1.75488 3.94E+11 4.42E+12 3.43E+10 5.27E+12
1.31E+06
1.75737 3.96E+11 4.45E+12 3.44E+10 5.28E+12
1.31E+06
1.75986 3.98E+11 4.47E+12 3.49E+10 5.28E+12
1.30E+06
1.76236 3.99E+11 4.50E+12 3.55E+10 5.28E+12
1.30E+06
1.76487 3.99E+11 4.52E+12 3.62E+10 5.29E+12
1.30E+06
1.76738 4.00E+11 4.53E+12 3.61E+10 5.30E+12
1.30E+06
1.7699 3.99E+11 4.54E+12 3.54E+10 5.29E+12
1.30E+06
1.77243 3.99E+11 4.57E+12 3.72E+10 5.31E+12
1.30E+06
1.77496 3.99E+11 4.60E+12 3.88E+10 5.32E+12
1.30E+06
1.77751 3.98E+11 4.62E+12 3.95E+10 5.32E+12
1.30E+06
1.78006 3.96E+11 4.65E+12 4.03E+10 5.32E+12
1.30E+06
1.78262 4.03E+11 4.70E+12 4.32E+10 5.35E+12
1.30E+06
1.78518 4.06E+11 4.72E+12 4.52E+10 5.35E+12
1.29E+06
1.78775 4.09E+11 4.76E+12 4.66E+10 5.36E+12
1.29E+06
1.79033 4.09E+11 4.80E+12 4.80E+10 5.36E+12
1.29E+06
1.79292 4.13E+11 4.83E+12 5.05E+10 5.39E+12
1.30E+06
1.79551 4.15E+11 4.87E+12 5.28E+10 5.42E+12
1.30E+06
1.79812 4.17E+11 4.91E+12 5.59E+10 5.44E+12
1.30E+06
1.80073 4.21E+11 4.97E+12 5.91E+10 5.48E+12
1.30E+06
1.80334 4.24E+11 5.01E+12 6.10E+10 5.49E+12
1.30E+06
1.80597 4.27E+11 5.06E+12 6.25E+10 5.50E+12
1.30E+06
1.8086 4.29E+11 5.11E+12 6.59E+10 5.53E+12
1.30E+06
1.81124 4.30E+11 5.17E+12 6.78E+10 5.56E+12
71

1.30E+06
1.81389 4.32E+11 5.22E+12 7.02E+10 5.59E+12
1.31E+06
1.81655 4.34E+11 5.28E+12 7.45E+10 5.63E+12
1.31E+06
1.81921 4.36E+11 5.34E+12 7.90E+10 5.65E+12
1.31E+06
1.82188 4.41E+11 5.38E+12 8.20E+10 5.68E+12
1.31E+06
1.82456 4.38E+11 5.40E+12 8.46E+10 5.69E+12
1.31E+06
1.82725 4.41E+11 5.45E+12 8.83E+10 5.72E+12
1.31E+06
1.82994 4.39E+11 5.49E+12 9.14E+10 5.76E+12
1.31E+06
1.83264 4.41E+11 5.52E+12 9.45E+10 5.80E+12
1.31E+06
1.83536 4.42E+11 5.58E+12 9.65E+10 5.82E+12
1.31E+06
1.83807 4.44E+11 5.64E+12 9.93E+10 5.84E+12
1.32E+06
1.8408 4.43E+11 5.68E+12 1.00E+11 5.86E+12
1.32E+06
1.84354 4.38E+11 5.70E+12 1.03E+11 5.89E+12
1.32E+06
1.84628 4.38E+11 5.74E+12 1.07E+11 5.93E+12
1.32E+06
1.84903 4.35E+11 5.79E+12 1.12E+11 5.98E+12
1.33E+06
1.85179 4.33E+11 5.83E+12 1.16E+11 6.02E+12
1.33E+06
1.85456 4.35E+11 5.85E+12 1.22E+11 6.05E+12
1.33E+06
1.85734 4.31E+11 5.89E+12 1.24E+11 6.08E+12
1.33E+06
1.86012 4.29E+11 5.92E+12 1.27E+11 6.11E+12
1.33E+06
1.86291 4.27E+11 5.94E+12 1.30E+11 6.14E+12
1.33E+06
1.86571 4.22E+11 6.00E+12 1.33E+11 6.18E+12
1.33E+06
1.86852 4.18E+11 6.04E+12 1.35E+11 6.21E+12
1.34E+06
1.87134 4.15E+11 6.09E+12 1.39E+11 6.24E+12
1.34E+06
1.87417 4.15E+11 6.12E+12 1.45E+11 6.29E+12
1.34E+06
1.877 4.11E+11 6.16E+12 1.49E+11 6.32E+12
1.34E+06
1.87985 4.07E+11 6.20E+12 1.56E+11 6.37E+12
1.35E+06
1.8827 4.05E+11 6.23E+12 1.62E+11 6.42E+12
1.35E+06
1.88556 4.05E+11 6.28E+12 1.72E+11 6.48E+12
1.35E+06
1.88843 4.03E+11 6.33E+12 1.80E+11 6.52E+12
1.35E+06
1.89131 3.99E+11 6.38E+12 1.87E+11 6.56E+12
1.36E+06
1.8942 3.97E+11 6.42E+12 1.93E+11 6.59E+12
1.36E+06
1.8971 3.94E+11 6.45E+12 1.99E+11 6.63E+12
1.36E+06
1.9 3.92E+11 6.52E+12 2.07E+11 6.68E+12
1.36E+06
1.90291 3.92E+11 6.58E+12 2.15E+11 6.74E+12
1.37E+06
1.90584 3.86E+11 6.59E+12 2.21E+11 6.78E+12
1.37E+06
1.90877 3.82E+11 6.62E+12 2.27E+11 6.83E+12
1.37E+06
1.91171 3.78E+11 6.64E+12 2.34E+11 6.87E+12
1.38E+06
1.91466 3.81E+11 6.69E+12 2.48E+11 6.95E+12
1.38E+06
1.91762 3.80E+11 6.74E+12 2.59E+11 7.03E+12
1.39E+06
1.92059 3.77E+11 6.79E+12 2.70E+11 7.09E+12
1.39E+06
1.92357 3.75E+11 6.85E+12 2.80E+11 7.16E+12
1.39E+06
1.92655 3.68E+11 6.88E+12 2.86E+11 7.19E+12
72

1.39E+06
1.92955 3.63E+11 6.92E+12 2.97E+11 7.24E+12
1.40E+06
1.93255 3.56E+11 6.95E+12 3.03E+11 7.29E+12
1.40E+06
1.93557 3.57E+11 7.00E+12 3.12E+11 7.36E+12
1.41E+06
1.93859 3.57E+11 7.04E+12 3.20E+11 7.42E+12
1.41E+06
1.94163 3.52E+11 7.09E+12 3.28E+11 7.48E+12
1.41E+06
1.94467 3.47E+11 7.13E+12 3.38E+11 7.55E+12
1.42E+06
1.94772 3.44E+11 7.16E+12 3.48E+11 7.63E+12
1.42E+06
1.95079 3.41E+11 7.19E+12 3.59E+11 7.68E+12
1.43E+06
1.95386 3.39E+11 7.25E+12 3.70E+11 7.76E+12
1.43E+06
1.95694 3.36E+11 7.31E+12 3.81E+11 7.83E+12
1.44E+06
1.96003 3.34E+11 7.36E+12 3.96E+11 7.92E+12
1.44E+06
1.96313 3.30E+11 7.42E+12 4.06E+11 8.00E+12
1.44E+06
1.96624 3.27E+11 7.46E+12 4.18E+11 8.07E+12
1.45E+06
1.96937 3.23E+11 7.49E+12 4.24E+11 8.16E+12
1.45E+06
1.9725 3.20E+11 7.51E+12 4.33E+11 8.22E+12
1.46E+06
1.97564 3.19E+11 7.56E+12 4.46E+11 8.33E+12
1.46E+06
1.97879 3.20E+11 7.61E+12 4.57E+11 8.40E+12
1.47E+06
1.98195 3.20E+11 7.65E+12 4.70E+11 8.48E+12
1.47E+06
1.98512 3.19E+11 7.70E+12 4.82E+11 8.57E+12
1.48E+06
1.9883 3.14E+11 7.74E+12 4.93E+11 8.63E+12
1.48E+06
1.99149 3.16E+11 7.77E+12 5.08E+11 8.72E+12
1.49E+06
1.99469 3.16E+11 7.81E+12 5.22E+11 8.81E+12
1.49E+06
1.99791 3.16E+11 7.86E+12 5.40E+11 8.91E+12
1.50E+06
2.00113 3.13E+11 7.91E+12 5.56E+11 9.02E+12
1.50E+06
2.00436 3.12E+11 7.95E+12 5.68E+11 9.10E+12
1.51E+06
2.00761 3.10E+11 7.98E+12 5.84E+11 9.19E+12
1.51E+06
2.01086 3.07E+11 7.99E+12 5.95E+11 9.27E+12
1.52E+06
2.01412 3.04E+11 8.02E+12 6.03E+11 9.34E+12
1.52E+06
2.0174 3.01E+11 8.06E+12 6.16E+11 9.43E+12
1.52E+06
2.02068 3.00E+11 8.10E+12 6.32E+11 9.48E+12
1.53E+06
2.02398 3.02E+11 8.15E+12 6.50E+11 9.59E+12
1.54E+06
2.02729 3.00E+11 8.18E+12 6.64E+11 9.69E+12
1.54E+06
2.03061 3.01E+11 8.20E+12 6.80E+11 9.77E+12
1.55E+06
2.03393 3.01E+11 8.24E+12 6.97E+11 9.88E+12
1.55E+06
2.03727 3.00E+11 8.27E+12 7.10E+11 9.96E+12
1.56E+06
2.04063 3.01E+11 8.30E+12 7.28E+11 1.01E+13
1.56E+06
2.04399 3.00E+11 8.32E+12 7.43E+11 1.02E+13
1.56E+06
2.04736 2.99E+11 8.34E+12 7.51E+11 1.02E+13
1.57E+06
2.05074 3.01E+11 8.37E+12 7.62E+11 1.03E+13
1.57E+06
2.05414 3.03E+11 8.39E+12 7.80E+11 1.04E+13
1.58E+06
2.05755 3.06E+11 8.42E+12 7.93E+11 1.05E+13
73

1.58E+06
2.06096 3.10E+11 8.45E+12 8.08E+11 1.06E+13
1.59E+06
2.06439 3.13E+11 8.47E+12 8.20E+11 1.07E+13
1.59E+06
2.06783 3.10E+11 8.43E+12 8.22E+11 1.08E+13
1.59E+06
2.07129 3.17E+11 8.47E+12 8.36E+11 1.09E+13
1.59E+06
2.07475 3.22E+11 8.51E+12 8.58E+11 1.09E+13
1.60E+06
2.07822 3.23E+11 8.51E+12 8.70E+11 1.10E+13
1.60E+06
2.08171 3.28E+11 8.53E+12 8.88E+11 1.11E+13
1.61E+06
2.08521 3.29E+11 8.56E+12 9.00E+11 1.12E+13
1.61E+06
2.08872 3.32E+11 8.57E+12 9.09E+11 1.13E+13
1.61E+06
2.09224 3.40E+11 8.61E+12 9.25E+11 1.14E+13
1.62E+06
2.09578 3.46E+11 8.62E+12 9.30E+11 1.15E+13
1.62E+06
2.09932 3.50E+11 8.63E+12 9.44E+11 1.16E+13
1.63E+06
2.10288 3.58E+11 8.64E+12 9.63E+11 1.17E+13
1.63E+06
2.10645 3.65E+11 8.65E+12 9.74E+11 1.18E+13
1.64E+06
2.11003 3.74E+11 8.68E+12 9.88E+11 1.20E+13
1.64E+06
2.11363 3.83E+11 8.68E+12 9.95E+11 1.20E+13
1.65E+06
2.11724 3.89E+11 8.69E+12 9.99E+11 1.21E+13
1.65E+06
2.12086 3.99E+11 8.72E+12 1.01E+12 1.22E+13
1.65E+06
2.12449 4.09E+11 8.74E+12 1.03E+12 1.23E+13
1.66E+06
2.12813 4.16E+11 8.73E+12 1.04E+12 1.24E+13
1.66E+06
2.13179 4.27E+11 8.72E+12 1.04E+12 1.25E+13
1.66E+06
2.13546 4.37E+11 8.72E+12 1.04E+12 1.26E+13
1.67E+06
2.13914 4.50E+11 8.72E+12 1.05E+12 1.27E+13
1.67E+06
2.14283 4.64E+11 8.70E+12 1.05E+12 1.27E+13
1.67E+06
2.14654 4.80E+11 8.73E+12 1.07E+12 1.29E+13
1.67E+06
2.15026 4.92E+11 8.73E+12 1.07E+12 1.29E+13
1.67E+06
2.15399 5.03E+11 8.71E+12 1.08E+12 1.30E+13
1.68E+06
2.15774 5.21E+11 8.74E+12 1.08E+12 1.31E+13
1.68E+06
2.1615 5.36E+11 8.76E+12 1.08E+12 1.32E+13
1.68E+06
2.16527 5.53E+11 8.75E+12 1.09E+12 1.33E+13
1.68E+06
2.16906 5.74E+11 8.74E+12 1.10E+12 1.33E+13
1.69E+06
2.17286 5.94E+11 8.73E+12 1.11E+12 1.34E+13
1.69E+06
2.17667 6.16E+11 8.74E+12 1.12E+12 1.35E+13
1.69E+06
2.18049 6.33E+11 8.75E+12 1.12E+12 1.36E+13
1.69E+06
2.18433 6.55E+11 8.73E+12 1.12E+12 1.37E+13
1.70E+06
2.18818 6.79E+11 8.75E+12 1.13E+12 1.38E+13
1.69E+06
2.19205 6.96E+11 8.73E+12 1.13E+12 1.38E+13
1.70E+06
2.19593 7.21E+11 8.73E+12 1.14E+12 1.39E+13
1.70E+06
2.19982 7.44E+11 8.73E+12 1.14E+12 1.39E+13
1.70E+06
2.20373 7.72E+11 8.72E+12 1.15E+12 1.40E+13
1.70E+06
2.20765 7.93E+11 8.69E+12 1.16E+12 1.41E+13
74

1.70E+06
2.21159 8.19E+11 8.66E+12 1.16E+12 1.42E+13
1.70E+06
2.21554 8.52E+11 8.65E+12 1.17E+12 1.42E+13
1.70E+06
2.2195 8.80E+11 8.63E+12 1.17E+12 1.43E+13
1.70E+06
2.22348 9.09E+11 8.61E+12 1.17E+12 1.43E+13
1.70E+06
2.22747 9.37E+11 8.61E+12 1.16E+12 1.44E+13
1.70E+06
2.23148 9.63E+11 8.61E+12 1.16E+12 1.44E+13
1.70E+06
2.2355 9.92E+11 8.59E+12 1.15E+12 1.45E+13
1.70E+06
2.23953 1.02E+12 8.57E+12 1.16E+12 1.46E+13
1.70E+06
2.24358 1.06E+12 8.55E+12 1.16E+12 1.46E+13
1.70E+06
2.24765 1.10E+12 8.54E+12 1.16E+12 1.47E+13
1.70E+06
2.25172 1.14E+12 8.54E+12 1.17E+12 1.47E+13
1.71E+06
2.25582 1.18E+12 8.57E+12 1.17E+12 1.48E+13
1.71E+06
2.25993 1.22E+12 8.56E+12 1.17E+12 1.49E+13
1.70E+06
2.26405 1.25E+12 8.54E+12 1.17E+12 1.49E+13
1.70E+06
2.26819 1.29E+12 8.53E+12 1.16E+12 1.49E+13
1.70E+06
2.27234 1.33E+12 8.53E+12 1.16E+12 1.50E+13
1.70E+06
2.27651 1.37E+12 8.53E+12 1.15E+12 1.50E+13
1.70E+06
2.2807 1.41E+12 8.54E+12 1.14E+12 1.51E+13
1.70E+06
2.2849 1.45E+12 8.52E+12 1.14E+12 1.51E+13
1.70E+06
2.28911 1.49E+12 8.50E+12 1.13E+12 1.51E+13
1.70E+06
2.29335 1.54E+12 8.50E+12 1.13E+12 1.51E+13
1.70E+06
2.29759 1.59E+12 8.49E+12 1.13E+12 1.52E+13
1.70E+06
2.30186 1.64E+12 8.50E+12 1.12E+12 1.52E+13
1.70E+06
2.30613 1.68E+12 8.51E+12 1.11E+12 1.53E+13
1.69E+06
2.31043 1.73E+12 8.50E+12 1.10E+12 1.53E+13
1.69E+06
2.31474 1.76E+12 8.49E+12 1.08E+12 1.53E+13
1.69E+06
2.31907 1.81E+12 8.49E+12 1.08E+12 1.53E+13
1.68E+06
2.32341 1.85E+12 8.48E+12 1.07E+12 1.53E+13
1.68E+06
2.32777 1.89E+12 8.48E+12 1.06E+12 1.53E+13
1.68E+06
2.33214 1.94E+12 8.51E+12 1.05E+12 1.53E+13
1.68E+06
2.33654 1.99E+12 8.53E+12 1.05E+12 1.54E+13
1.67E+06
2.34094 2.03E+12 8.53E+12 1.03E+12 1.53E+13
1.67E+06
2.34537 2.08E+12 8.56E+12 1.04E+12 1.54E+13
1.67E+06
2.34981 2.13E+12 8.59E+12 1.04E+12 1.54E+13
1.67E+06
2.35427 2.19E+12 8.61E+12 1.03E+12 1.54E+13
1.67E+06
2.35875 2.23E+12 8.65E+12 1.03E+12 1.55E+13
1.66E+06
2.36324 2.28E+12 8.65E+12 1.02E+12 1.55E+13
1.66E+06
2.36775 2.33E+12 8.69E+12 1.02E+12 1.55E+13
1.66E+06
2.37228 2.36E+12 8.71E+12 1.01E+12 1.55E+13
1.65E+06
2.37682 2.40E+12 8.73E+12 1.01E+12 1.54E+13
1.65E+06
2.38138 2.44E+12 8.79E+12 1.00E+12 1.55E+13
75

1.66E+06
2.38596 2.56E+12 8.92E+12 1.04E+12 1.57E+13
1.66E+06
2.39056 2.60E+12 8.97E+12 1.05E+12 1.57E+13
1.65E+06
2.39517 2.64E+12 9.00E+12 1.04E+12 1.57E+13
1.65E+06
2.39981 2.68E+12 9.03E+12 1.04E+12 1.57E+13
1.64E+06
2.40446 2.71E+12 9.07E+12 1.03E+12 1.56E+13
1.64E+06
2.40913 2.76E+12 9.12E+12 1.03E+12 1.56E+13
1.63E+06
2.41381 2.80E+12 9.15E+12 1.02E+12 1.56E+13
1.63E+06
2.41852 2.84E+12 9.23E+12 1.03E+12 1.56E+13
1.63E+06
2.42324 2.88E+12 9.30E+12 1.03E+12 1.56E+13
1.62E+06
2.42798 2.91E+12 9.38E+12 1.02E+12 1.56E+13
1.62E+06
2.43275 2.93E+12 9.43E+12 1.02E+12 1.55E+13
1.62E+06
2.43753 2.95E+12 9.53E+12 1.03E+12 1.55E+13
1.62E+06
2.44232 3.00E+12 9.64E+12 1.03E+12 1.56E+13
1.61E+06
2.44714 3.03E+12 9.73E+12 1.04E+12 1.55E+13
1.60E+06
2.45198 3.06E+12 9.83E+12 1.05E+12 1.55E+13
1.60E+06
2.45683 3.11E+12 9.96E+12 1.06E+12 1.55E+13
1.60E+06
2.46171 3.13E+12 1.01E+13 1.07E+12 1.54E+13
1.59E+06
2.4666 3.17E+12 1.02E+13 1.08E+12 1.54E+13
1.59E+06
2.47151 3.22E+12 1.04E+13 1.10E+12 1.54E+13
1.58E+06
2.47645 3.23E+12 1.05E+13 1.12E+12 1.54E+13
1.58E+06
2.4814 3.26E+12 1.07E+13 1.14E+12 1.54E+13
1.58E+06
2.48637 3.27E+12 1.08E+13 1.16E+12 1.54E+13
1.58E+06
2.49137 3.29E+12 1.10E+13 1.19E+12 1.54E+13
1.58E+06
2.49638 3.32E+12 1.12E+13 1.21E+12 1.55E+13
1.57E+06
2.50141 3.33E+12 1.14E+13 1.24E+12 1.55E+13
1.57E+06
2.50647 3.35E+12 1.16E+13 1.28E+12 1.55E+13
1.57E+06
2.51154 3.38E+12 1.18E+13 1.31E+12 1.55E+13
1.57E+06
2.51663 3.40E+12 1.20E+13 1.34E+12 1.55E+13
1.57E+06
2.52175 3.42E+12 1.22E+13 1.39E+12 1.56E+13
1.57E+06
2.52688 3.44E+12 1.24E+13 1.44E+12 1.57E+13
1.57E+06
2.53204 3.46E+12 1.27E+13 1.49E+12 1.58E+13
1.57E+06
2.53722 3.46E+12 1.29E+13 1.54E+12 1.58E+13
1.57E+06
2.54242 3.47E+12 1.31E+13 1.60E+12 1.59E+13
1.57E+06
2.54764 3.49E+12 1.34E+13 1.66E+12 1.60E+13
1.57E+06
2.55288 3.50E+12 1.37E+13 1.71E+12 1.61E+13
1.57E+06
2.55814 3.54E+12 1.39E+13 1.78E+12 1.62E+13
1.57E+06
2.56343 3.56E+12 1.42E+13 1.85E+12 1.62E+13
1.57E+06
2.56874 3.58E+12 1.44E+13 1.92E+12 1.63E+13
1.58E+06
2.57407 3.59E+12 1.47E+13 2.00E+12 1.65E+13
1.58E+06
2.57942 3.60E+12 1.49E+13 2.08E+12 1.65E+13
1.58E+06
2.58479 3.64E+12 1.52E+13 2.17E+12 1.66E+13
76

1.58E+06
2.59019 3.67E+12 1.55E+13 2.26E+12 1.68E+13
1.59E+06
2.59561 3.70E+12 1.59E+13 2.37E+12 1.70E+13
1.59E+06
2.60105 3.73E+12 1.61E+13 2.48E+12 1.72E+13
1.59E+06
2.60651 3.74E+12 1.64E+13 2.57E+12 1.73E+13
1.60E+06
2.612 3.76E+12 1.67E+13 2.66E+12 1.74E+13
1.60E+06
2.61751 3.81E+12 1.70E+13 2.79E+12 1.76E+13
1.61E+06
2.62304 3.84E+12 1.73E+13 2.89E+12 1.78E+13
1.62E+06
2.6286 3.90E+12 1.76E+13 3.01E+12 1.80E+13
1.62E+06
2.63418 3.94E+12 1.79E+13 3.14E+12 1.82E+13
1.63E+06
2.63979 3.98E+12 1.82E+13 3.28E+12 1.85E+13
1.64E+06
2.64542 4.02E+12 1.85E+13 3.42E+12 1.88E+13
1.65E+06
2.65107 4.07E+12 1.88E+13 3.57E+12 1.90E+13
1.65E+06
2.65675 4.13E+12 1.92E+13 3.72E+12 1.93E+13
1.66E+06
2.66245 4.21E+12 1.95E+13 3.90E+12 1.96E+13
1.68E+06
2.66817 4.28E+12 1.99E+13 4.05E+12 2.00E+13
1.69E+06
2.67392 4.33E+12 2.02E+13 4.21E+12 2.04E+13
1.70E+06
2.6797 4.43E+12 2.05E+13 4.39E+12 2.08E+13
1.71E+06
2.6855 4.52E+12 2.08E+13 4.56E+12 2.11E+13
1.73E+06
2.69132 4.62E+12 2.11E+13 4.76E+12 2.16E+13
1.74E+06
2.69717 4.74E+12 2.15E+13 4.97E+12 2.21E+13
1.76E+06
2.70305 4.88E+12 2.18E+13 5.17E+12 2.25E+13
1.77E+06
2.70895 5.03E+12 2.21E+13 5.37E+12 2.31E+13
1.79E+06
2.71488 5.17E+12 2.24E+13 5.61E+12 2.35E+13
1.80E+06
2.72083 5.30E+12 2.27E+13 5.85E+12 2.40E+13
1.82E+06
2.72681 5.44E+12 2.30E+13 6.10E+12 2.46E+13
1.84E+06
2.73282 5.62E+12 2.33E+13 6.35E+12 2.51E+13
1.85E+06
2.73885 5.78E+12 2.36E+13 6.61E+12 2.57E+13
1.87E+06
2.74491 5.98E+12 2.39E+13 6.86E+12 2.63E+13
1.89E+06
2.751 6.20E+12 2.41E+13 7.12E+12 2.70E+13
1.91E+06
2.75711 6.39E+12 2.43E+13 7.35E+12 2.76E+13
1.92E+06
2.76325 6.57E+12 2.45E+13 7.61E+12 2.82E+13
1.94E+06
2.76942 6.80E+12 2.48E+13 7.90E+12 2.90E+13
1.96E+06
2.77562 7.01E+12 2.50E+13 8.12E+12 2.97E+13
1.98E+06
2.78184 7.26E+12 2.52E+13 8.37E+12 3.03E+13
2.00E+06
2.78809 7.51E+12 2.54E+13 8.62E+12 3.10E+13
2.02E+06
2.79437 7.76E+12 2.56E+13 8.87E+12 3.18E+13
2.04E+06
2.80068 7.98E+12 2.58E+13 9.12E+12 3.26E+13
2.05E+06
2.80701 8.21E+12 2.59E+13 9.36E+12 3.33E+13
2.08E+06
2.81338 8.48E+12 2.61E+13 9.60E+12 3.41E+13
2.10E+06
2.81977 8.80E+12 2.64E+13 9.82E+12 3.50E+13
2.12E+06
2.8262 9.10E+12 2.65E+13 1.01E+13 3.58E+13
77

2.13E+06
2.83265 9.38E+12 2.67E+13 1.03E+13 3.65E+13
2.15E+06
2.83913 9.68E+12 2.68E+13 1.05E+13 3.74E+13
2.17E+06
2.84564 9.98E+12 2.70E+13 1.08E+13 3.83E+13
2.19E+06
2.85218 1.03E+13 2.71E+13 1.10E+13 3.91E+13
2.21E+06
2.85876 1.06E+13 2.73E+13 1.12E+13 3.99E+13
2.23E+06
2.86536 1.10E+13 2.75E+13 1.15E+13 4.09E+13
2.25E+06
2.87199 1.14E+13 2.76E+13 1.16E+13 4.17E+13
2.27E+06
2.87865 1.18E+13 2.78E+13 1.20E+13 4.25E+13
2.29E+06
2.88535 1.22E+13 2.80E+13 1.22E+13 4.35E+13
2.30E+06
2.89208 1.25E+13 2.83E+13 1.25E+13 4.44E+13
2.32E+06
2.89883 1.29E+13 2.85E+13 1.28E+13 4.53E+13
2.34E+06
2.90562 1.33E+13 2.87E+13 1.31E+13 4.61E+13
2.36E+06
2.91244 1.38E+13 2.89E+13 1.33E+13 4.71E+13
2.37E+06
2.91929 1.42E+13 2.92E+13 1.36E+13 4.80E+13
2.39E+06
2.92618 1.46E+13 2.94E+13 1.39E+13 4.90E+13
2.41E+06
2.9331 1.51E+13 2.98E+13 1.42E+13 4.99E+13
2.43E+06
2.94005 1.56E+13 3.02E+13 1.44E+13 5.10E+13
2.45E+06
2.94703 1.61E+13 3.07E+13 1.48E+13 5.21E+13
2.47E+06
2.95405 1.66E+13 3.11E+13 1.50E+13 5.31E+13
2.49E+06
2.9611 1.72E+13 3.17E+13 1.54E+13 5.42E+13
2.51E+06
2.96818 1.78E+13 3.23E+13 1.58E+13 5.53E+13
2.52E+06
2.9753 1.83E+13 3.30E+13 1.62E+13 5.62E+13
2.54E+06
2.98245 1.88E+13 3.38E+13 1.66E+13 5.73E+13
2.56E+06
2.98964 1.95E+13 3.46E+13 1.71E+13 5.86E+13
2.58E+06
2.99686 2.03E+13 3.56E+13 1.77E+13 6.00E+13
2.61E+06
3.00412 2.09E+13 3.68E+13 1.83E+13 6.14E+13
2.63E+06
3.01141 2.17E+13 3.82E+13 1.90E+13 6.26E+13
2.65E+06
3.01874 2.26E+13 3.97E+13 1.99E+13 6.41E+13
2.68E+06
3.0261 2.35E+13 4.12E+13 2.09E+13 6.57E+13
2.70E+06
3.0335 2.45E+13 4.31E+13 2.19E+13 6.71E+13
2.72E+06
3.04093 2.56E+13 4.53E+13 2.31E+13 6.85E+13
2.75E+06
3.0484 2.69E+13 4.75E+13 2.44E+13 7.05E+13
2.79E+06
3.05591 2.82E+13 5.00E+13 2.60E+13 7.26E+13
2.83E+06
3.06346 2.97E+13 5.30E+13 2.78E+13 7.51E+13
2.88E+06
3.07104 3.16E+13 5.62E+13 3.00E+13 7.81E+13
2.93E+06
3.07866 3.35E+13 5.98E+13 3.24E+13 8.13E+13
2.99E+06
3.08632 3.59E+13 6.43E+13 3.52E+13 8.50E+13
3.05E+06
3.09402 3.86E+13 6.88E+13 3.84E+13 8.92E+13
3.13E+06
3.10175 4.19E+13 7.43E+13 4.24E+13 9.41E+13
3.22E+06
3.10952 4.52E+13 8.06E+13 4.69E+13 9.99E+13
3.31E+06
3.11734 4.91E+13 8.72E+13 5.19E+13 1.06E+14
78

3.41E+06
3.12519 5.39E+13 9.44E+13 5.78E+13 1.14E+14
3.53E+06
3.13308 5.88E+13 1.02E+14 6.44E+13 1.22E+14
3.66E+06
3.14101 6.45E+13 1.11E+14 7.20E+13 1.32E+14
3.80E+06
3.14899 7.12E+13 1.22E+14 8.04E+13 1.43E+14
3.96E+06
3.157 7.90E+13 1.32E+14 9.04E+13 1.56E+14
4.13E+06
3.16505 8.74E+13 1.45E+14 1.02E+14 1.71E+14
4.33E+06
3.17315 9.73E+13 1.60E+14 1.15E+14 1.89E+14
4.53E+06
3.18128 1.09E+14 1.77E+14 1.30E+14 2.08E+14
4.75E+06
3.18946 1.23E+14 1.94E+14 1.47E+14 2.30E+14
5.00E+06
3.19768 1.37E+14 2.16E+14 1.68E+14 2.56E+14
5.28E+06
3.20594 1.55E+14 2.40E+14 1.90E+14 2.86E+14
5.55E+06
3.21425 1.75E+14 2.65E+14 2.15E+14 3.19E+14
5.86E+06
3.2226 1.97E+14 2.94E+14 2.45E+14 3.57E+14
6.20E+06
3.23099 2.21E+14 3.29E+14 2.80E+14 4.02E+14
6.56E+06
3.23943 2.51E+14 3.66E+14 3.18E+14 4.52E+14
6.92E+06
3.24791 2.84E+14 4.07E+14 3.60E+14 5.05E+14
7.31E+06
3.25643 3.20E+14 4.57E+14 4.11E+14 5.66E+14
7.74E+06
3.265 3.64E+14 5.17E+14 4.65E+14 6.39E+14
8.19E+06
3.27362 4.16E+14 5.75E+14 5.28E+14 7.20E+14
8.65E+06
3.28228 4.73E+14 6.45E+14 6.01E+14 8.07E+14
9.17E+06
3.29098 5.35E+14 7.41E+14 6.89E+14 9.10E+14
9.77E+06
3.29973 6.24E+14 8.45E+14 7.79E+14 1.04E+15
1.04E+07
3.30853 7.26E+14 9.42E+14 8.88E+14 1.18E+15
1.10E+07
3.31738 8.29E+14 1.09E+15 1.04E+15 1.33E+15
1.17E+07
3.32627 9.73E+14 1.30E+15 1.19E+15 1.50E+15
1.26E+07
3.33522 1.26E+15 1.49E+15 1.33E+15 1.76E+15
1.33E+07
3.34421 1.56E+15 1.72E+15 1.54E+15 1.99E+15
1.80E+07
3.35324 1.07E+15 2.80E+15 3.39E+15 3.62E+15
2.10E+07
3.36233 1.13E+15 2.25E+15 2.89E+15 4.97E+15
1.61E+07
3.37147 1.16E+15 1.83E+15 8.29E+15 2.96E+15
1.58E+07
3.38065 1.04E+15 1.93E+15 2.99E+15 2.86E+15
1.69E+07
3.38989 1.03E+15 2.03E+15 3.06E+15 3.27E+15
1.53E+07
3.39918 1.10E+15 1.71E+15 2.85E+15 2.72E+15
1.43E+07
3.40852 1.02E+15 1.67E+15 2.30E+15 2.38E+15
1.48E+07
3.41791 9.59E+14 2.08E+15 2.16E+15 2.57E+15
1.59E+07
3.42735 1.06E+15 1.81E+15 2.50E+15 2.96E+15
1.47E+07
3.43684 1.16E+15 1.57E+15 2.25E+15 2.54E+15
1.40E+07
3.44639 1.03E+15 1.68E+15 1.99E+15 2.33E+15
1.52E+07
3.45599 1.02E+15 1.86E+15 2.04E+15 2.78E+15
1.51E+07
3.46564 1.19E+15 1.57E+15 2.26E+15 2.73E+15
1.49E+07
3.47535 1.13E+15 1.54E+15 2.03E+15 2.68E+15
79

1.45E+07
3.48511 1.06E+15 1.64E+15 1.92E+15 2.57E+15
1.52E+07
3.49493 1.13E+15 1.64E+15 2.03E+15 2.81E+15
1.51E+07
3.5048 1.21E+15 1.54E+15 2.08E+15 2.79E+15
1.48E+07
3.51473 1.15E+15 1.63E+15 1.95E+15 2.69E+15
1.46E+07
3.52472 1.15E+15 1.76E+15 1.85E+15 2.64E+15
1.50E+07
3.53476 1.21E+15 1.64E+15 1.94E+15 2.79E+15
1.46E+07
3.54486 1.17E+15 1.57E+15 2.01E+15 2.69E+15
1.39E+07
3.55502 1.09E+15 1.68E+15 1.87E+15 2.44E+15
1.38E+07
3.56523 1.16E+15 1.66E+15 1.88E+15 2.43E+15
1.43E+07
3.57551 1.23E+15 1.54E+15 1.97E+15 2.60E+15
1.40E+07
3.58584 1.14E+15 1.61E+15 1.92E+15 2.53E+15
1.36E+07
3.59623 1.11E+15 1.74E+15 1.82E+15 2.38E+15
1.39E+07
3.60669 1.20E+15 1.65E+15 1.90E+15 2.51E+15
1.39E+07
3.6172 1.19E+15 1.52E+15 2.00E+15 2.54E+15
1.36E+07
3.62778 1.08E+15 1.67E+15 1.89E+15 2.45E+15
1.31E+07
3.63842 1.14E+15 1.78E+15 1.81E+15 2.26E+15
1.31E+07
3.64912 9.74E+14 1.47E+15 1.64E+15 2.27E+15
1.24E+07
3.65988 9.34E+14 1.36E+15 1.85E+15 2.08E+15
1.24E+07
3.67071 1.02E+15 1.53E+15 1.83E+15 2.08E+15
1.30E+07
3.6816 1.08E+15 1.62E+15 1.74E+15 2.28E+15
1.28E+07
3.69256 1.02E+15 1.46E+15 1.83E+15 2.25E+15
1.24E+07
3.70358 1.01E+15 1.45E+15 1.95E+15 2.11E+15
1.28E+07
3.71467 1.11E+15 1.62E+15 1.86E+15 2.27E+15
1.36E+07
3.72583 1.10E+15 1.58E+15 1.78E+15 2.55E+15
1.31E+07
3.73705 1.04E+15 1.48E+15 1.97E+15 2.40E+15
1.28E+07
3.74834 1.09E+15 1.60E+15 2.06E+15 2.31E+15
1.37E+07
3.7597 1.19E+15 1.72E+15 1.94E+15 2.67E+15
1.37E+07
3.77113 1.10E+15 1.58E+15 1.92E+15 2.65E+15
1.33E+07
3.78262 1.09E+15 1.55E+15 2.08E+15 2.52E+15
1.31E+07
3.79419 1.17E+15 1.73E+15 2.08E+15 2.47E+15
1.40E+07
3.80583 1.16E+15 1.78E+15 1.97E+15 2.84E+15
1.40E+07
3.81754 1.11E+15 1.66E+15 2.08E+15 2.87E+15
1.37E+07
3.82932 1.19E+15 1.77E+15 2.29E+15 2.74E+15
1.41E+07
3.84118 1.27E+15 1.93E+15 2.14E+15 2.93E+15
1.50E+07
3.85311 1.16E+15 1.72E+15 2.02E+15 3.35E+15
1.48E+07
3.86511 1.15E+15 1.64E+15 2.17E+15 3.26E+15
1.38E+07
3.87719 1.25E+15 1.86E+15 2.33E+15 2.87E+15
1.41E+07
3.88934 1.27E+15 1.94E+15 2.24E+15 3.01E+15
1.42E+07
3.90157 1.19E+15 1.81E+15 2.15E+15 3.09E+15
1.35E+07
3.91388 1.26E+15 1.89E+15 2.42E+15 2.81E+15
1.33E+07
3.92627 1.34E+15 2.14E+15 2.40E+15 2.71E+15
80

1.37E+07
3.93873 1.27E+15 2.01E+15 2.28E+15 2.90E+15
1.35E+07
3.95127 1.25E+15 1.86E+15 2.29E+15 2.84E+15
1.31E+07
3.9639 1.34E+15 1.98E+15 2.48E+15 2.69E+15
1.28E+07
3.9766 1.33E+15 2.13E+15 2.44E+15 2.61E+15
1.33E+07
3.98939 1.28E+15 2.00E+15 2.29E+15 2.83E+15
1.32E+07
4.00226 1.34E+15 1.96E+15 2.46E+15 2.80E+15
1.28E+07
4.01521 1.44E+15 2.16E+15 2.49E+15 2.63E+15
1.27E+07
4.02825 1.33E+15 2.02E+15 2.35E+15 2.62E+15
1.30E+07
4.04137 1.29E+15 1.94E+15 2.28E+15 2.77E+15
1.29E+07
4.05458 1.40E+15 2.12E+15 2.46E+15 2.74E+15
1.25E+07
4.06787 1.45E+15 2.26E+15 2.50E+15 2.61E+15
1.27E+07
4.08125 1.36E+15 2.05E+15 2.40E+15 2.71E+15
1.31E+07
4.09472 1.41E+15 1.99E+15 2.39E+15 2.87E+15
1.29E+07
4.10828 1.49E+15 2.19E+15 2.61E+15 2.81E+15
1.27E+07
4.12193 1.43E+15 2.13E+15 2.59E+15 2.73E+15
1.31E+07
4.13567 1.38E+15 1.95E+15 2.46E+15 2.94E+15

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SPUTTERING PRESSURE AND OXYGEN RATIO DEPENDENCE

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