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Introduction The CMOS Technology Layout of MOS Transistors Layout of Resistors Layout of Capacitors
IC Technology & Layout
INTRODUCTION
Integrated Circuit: single component including a large number of active and passive devices and their interconnections to realize complex functions Monolithic Technology: all devices are realized on the same silicon crystal Planar Technology: all processing steps act on a very thin surface layer of the wafer all ICs on the same wafer are realized simultaneously fabrication costs are largely reduced
PROCESSING STEPS
Modication of surface electrical characteristics of the wafer or deposition of lms of various materials thermal oxidation ion implantation thermal diffusion epitaxy lm deposition Photolithographic processes masking selective etching
IC Technology & Layout
n-substrate
thermal oxidation
Photoresist
+++++++++
p-well implant
300 nm 3 m p-well
++ n Phosphorus 40 keV
p-well
++
p-implant isolation
++
p-well
++
n-implant isolation
p-well
p-well
50 nm
polysilicon
n p p
p-well
p-well
++
++
n+
n+
n polysilicon 2
n
p+ p+
p-well
n+
n+
p-well
aluminium
p+ p+ n+ n+
p-well
MASK
MASK
L1
x etched layer
0.6 - 0.8 x LATERAL DIFFUSION
undercut
more active
less active
THREE-DIMENSIONAL EFFECTS
Source
Source
Gate Drain
Metal Contact
Drain
Gate
Metal Contact
TRANSISTOR MATCHING
Orientation Boundary conditions
Different undercut
Metal
Oxide
SUBSTRATE BIASING
Biasing must be as close as possible to the active devices Any noisy signal affecting the substrate or the well should be sinked by the biasing and not affecting the circuit itself
p-channel transistor
n-channel transistor
LAYOUT OF RESISTORS
Integrated resistors are made of thin strips of resistive layer a resistive strip is contacted at the two terminals by ohmic contacts (metal p+ or n+) insulation from the surrounding is made by oxide layers or by reversely biased junctions
metal Insulator metal
W L
R = 2R cont
R# sheet resistance
LAYOUT OF RESISTORS
Metal
n+ p-substrate
Diffusion n+ Well
p+ n-well p-substrate
n+ n-well p -substrate
pinched n-well
n+
n+
polysilicon
p-substrate
ACCURACY OF RESISTORS
The sheet resistance is pretty low long strips must be used Serpentine shapes are commonly used Problems of corners (estimated half a square) Undercut (width reduction) Boundary dependent undercut Parameters gradient R 2 L 2 W 2 2 x j 2 ------- = ------ + --------- + ------ + -------R L W xj
IC Technology & Layout
terminals
POWER DEVICE
POWER DEVICE
T 1 T2 T3
T 1 T2 T3
INTERDIGITIZED RESISTORS
Absolute accuracy is poor because of the large parameter drift Ratio or matching accuracy is better because it depends on the local variation of parameters Use of interdigitized structures (common centroid) minimizes errors due to gradient in the parameters value
R1 R2
Dummy strip
R1
R2
Dummy strip
RESISTOR FEATURES
Type of layer n+ diff p+ diff n-well p-well pinch. n-well pinch. p-well first poly second poly Sheet Res. /# 20-35 25-60 1K-1.4K 3K-6K 6K-10K 9K-13K 20-28 21-33 Accuracy % 20-40 20-40 15-30 15-30 25-40 25-40 15-30 15-30 Temp. C. ppm/C 1800 1700 6.5K 6.5K 10K 10K 900 800 Volt. C. ppm/V 50-300 50-300 10K 10K 20K 20K 20-200 20-200
IC Technology & Layout
SHIELDING
Mixed analog-digital systems are affected by the problem of noisy interference between the analog and the digital sections The most critical source of coupling are the resistances It is important to guarantee possible shielding toward the substrate (or possibly the top side)
n+ diffusion Metal 2 Metal 1 Metal 1 polysilicon p+ p-well Metal Metal Poly-2 resistor shield
Poly - 1 resistor
SHIELDING
p+, Substrate bias Resistor ending n+, Well bias Well under the resistor Contact Metal line
RESISTOR GUIDELINES
For matching: use of equal structures not too narrow (W > Wmin) interdigitize thermal effect compensation 45 orientation if stressed For good TC: use of n+ or p+ layers use of poly layers For absolute value: use of diffused layers; suitable endings
IC Technology & Layout
INTEGRATED CAPACITORS
Electrodes: Insulator: metal, polysilicon, diffusion silicon oxide, polysilicon oxide, CVD oxide 0 r C = --------- WL t ox A normal capacitance is 1 pF
polysilicon polysilicon 1 polysilicon 2
p+ or n+ diffusion
INTEGRATED CAPACITORS
Integrated capacitors are made by structures very close to the silicon substrate parasitic capacitances are not negligible and affect any integrated capacitor
Poly-poly capacitor
TOP PLATE BOTTOM PLATE
Poly-diffusion capacitor
TOP PLATE BOTTOM PLATE
Poly-poly capacitor: Cp,b = 0.01 C Cp,t = 0.001 C Poly-diff capacitor: Cp,b = 0.1 C Cp,t = 0.01 C
IC Technology & Layout
Substrate Substrate C Bottom C Substrate p,b Top C p,t Reversely biased junction
oxide damage impurities stress temperature bias condition bias history (for CVD)
: etching alignment
t ox ---------- : t ox
UNDERCUT EFFECT
The value of the area is given by the smaller plate or by the thin oxide area (fringing components are neglected) The actual area is less than the designed area because of the undercut effect A = WL WL 2 ( L + W )x 1 P x --A A A the same proportional reduction if the perimeter-area ratio is kept constant
W' W
W = W 2x L = L 2x
IC Technology & Layout
LAYOUT OF CAPACITORS
Capacitors are used as matched elements to dene precise ratios They are often connected to the virtual ground of op-amps careful layout matching good shielding to limit injection of noisy signals
poly 1 metal contact poly 2 poly 1 contact area without poly 1 (thick oxide) poly 2 on thick oxide
CAPACITOR FEATURES
Type poly-diff poly1-poly2 metal-poly metal-diff tox nm 15-20 18-21 600-700 1200-1400 Accuracy % 7-14 6-12 6-12 6-12 6-12 Temp. C. ppm/C 20-50 20-50 50-100 50-100 50-100 Volt. C. ppm/V 60-300 40-200 40-200 60-300 40-200
metal1-metal2 750-1250
CAPACITOR MATCHING
Matched capacitors should have the same perimeter-area ratio Unity capacitors must be used
B:C1 T:C1 B:C2 T:C2=3C1
B:C3
T:C3=4C1
C1 TC1
C2 TC2
C3 TC3
C4 TC4
C5 TC5
TC5
TC4
TC1
TC2 TC3