Workshop2: MOSFETS 1.

1 Objectives:
To experimentally obtain the Threshold Voltage Vt of a MOSFET. To design a circuit to properly bias a MOSFET in the saturation region of operation. To apply a small signal at the gate terminal if a MOSFET and observe its amplification characteristics.

1.2

Required Equipment:

2N7000 N-Channel MOSFET (FAIRCHILD). various resistors of different values

Digital Multi Meter Wires Breadboard. DC Voltage sources.

1.3

Determination of the Threshold Voltage of a MOSFET:

1.3.1 Circuit Diagram:

VGG VDD

RD = 3.3K

2N7000

Figure 1

1.3.2

Procedure:

We arranged all circuit elements according to the above schematic on the breadboard. We made sure that there are no loose connections. We connected the resistor RD to a variable voltage source VDD and the gate to a variable voltage source VGG. Initially we kept the VGG =0 V and VDD = 10 V. A DMM was attached the drain to measure the grain current ID. At VGG =0 V, no current was flowing in the drain. The VGG was gradually increased and the readings at the DMM were observed. Initially there was no current and the transistor was in cutoff region. At V GG =1.5 V, a very small current was observed. Hence, it was concluded that the transistor turned on at VGG =1.5 V. this is the Threshold Voltage of the transistor. After finding out the threshold voltage, we set VGS = 2.2 V. We gradually varied the value of VDD from 0 to 15 V and measured the corresponding values of I D and VDS. We recorded these measurements in tabular form and plotted the ID v/s VDS curve. The above step was repeated for VGS = 2.3-2.4 V. The following plots were obtained
3.5 3

Triode Region
2.5

Saturation Region
2 1.5 1 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 10
Figure 2

VGS = 2.2V VGS=2.3 V VGS = 2.4 V

Cut off Region

1.4 1.4.1

Biasing a transistor at an optimum Q-Point: Circuit Diagram:

= 3.3 K

Figure 3

The values of RG1 and RG2 were selected to be 1M and 166 K respectively. 1.4.2 Procedure:

We arranged all circuit elements according to the above schematic on the breadboard. We made sure that there are no loose connections. We connected the resistor RD to a variable voltage source VDD and RG1 to the same voltage source. After fixing the value of VGS at 2.3 V, we observed the value of VDS, which came out to be 7.5 V. Hence , our transistor was properly biased.

1.5

Determination of the value of gm and small signal behavior of a transistor.

1.5.1 Procedure: The above circuit was modified to include a sinusoidal voltage source (0.1 V, 1KHZ) at the gate. This source was connected to the gate with the help of a 220 F coupling capacitor. The output voltage at the drain was measures. The voltage across output was Vo = 10Vp-p =
3.53 Vrms. The voltage gain was 5/0.1 = 50. Now, we know that

hence,

The frequency response of the MOSFET was observed by varying the frequency of the input sinusoidal source vsig and measuring the corresponding output voltage at drain. The data was recorded as follows:
frequency (KHz) 1 2 3 10 15 20 50 100 150 200 250 300 350 400 450 500 550 600 650 700 Vp-p 10 10 10 10 10 9.92 9.84 9.6 9.4 9.2 8.96 8.72 8.4 8.16 7.84 7.6 7.44 7.2 7.05 6.81 V (amplitude) 5 5 5 5 5 4.96 4.92 4.8 4.7 4.6 4.48 4.36 4.2 4.08 3.92 3.8 3.72 3.6 3.525 3.405 Vrms 3.535 3.535 3.535 3.535 3.535 3.50672 3.47844 3.3936 3.3229 3.2522 3.16736 3.08252 2.9694 2.88456 2.77144 2.6866 2.63004 2.5452 2.492175 2.407335 Av 50 50 50 50 50 49.6 49.2 48 47 46 44.8 43.6 42 40.8 39.2 38 37.2 36 35.25 34.05 Av (dB) 33.9794 33.9794 33.9794 33.9794 33.9794 33.90963 33.8393 33.62482 33.44196 33.25516 33.02556 32.78973 32.46499 32.2132 31.86572 31.59567 31.41086 31.12605 30.94318 30.64234

750 800

6.59 6.42

3.295 3.21

2.329565 32.95 2.26947 32.1

30.35711 30.1301

We plotted the above data as a dB-Log graph, with Av (dB) on y-axis and frequency on xaxis.

Figure 4

The 3-dB cutoff frequency was 550 KHz.

1.5 Conclusion: This experiment aimed at investigating various characteristics of a MOSFET transistor. During this experiment, a strong dependence of the MOSFET on its biasing conditions was observed. If not properly biased, a transistor might never yield the desired results. Initially we were not able to properly bias the transistor because of incorrect values of the resistors used at the gate. We fixed this problem by increasing the values of these resistors while keeping their ration constant. The frequency response of the transistor was also observed. The importance of the coupling capacitors in determining the shape of the frequency response was also underscored. The value

of the transconductance gm was also calculated experimentally. It came out to be low as compared to the theoretically determined value. The reason for this vartion can be accounted for the changes in device parameters since gm strongly depends on the internal parameters of a transistor.