ON Semiconductort

JFET Chopper Transistors

NChannel Depletion
3 GATE

1 DRAIN

J111 J112 J113

MAXIMUM RATINGS
Rating DrainGate Voltage GateSource Voltage Gate Current Total Device Dissipation @ TA = 25C Derate above 25C Lead Temperature Operating and Storage Junction Temperature Range Symbol VDG VGS IG PD TL TJ, Tstg Value 35 35 50 350 2.8 300

2 SOURCE Unit Vdc Vdc mAdc mW mW/C C C

1 2 3

65 to +150

CASE 2911, STYLE 5 TO92 (TO226AA)

ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
GateSource Breakdown Voltage (IG = 1.0 Adc) Gate Reverse Current (VGS = 15 Vdc) Gate Source Cutoff Voltage (VDS = 5.0 Vdc, ID = 1.0 Adc) J111 J112 J113 ID(off) V(BR)GSS IGSS VGS(off) 3.0 1.0 0.5 10 5.0 3.0 1.0 nAdc 35 1.0 Vdc nAdc Vdc

DrainCutoff Current (VDS = 5.0 Vdc, VGS = 10 Vdc)

ON CHARACTERISTICS
ZeroGateVoltage Drain Current(1) (VDS = 15 Vdc) IDSS J111 J112 J113 rDS(on) J111 J112 J113 Cdg(on) + Csg(on) Cdg(off) Csg(off) 30 50 100 28 pF 20 5.0 2.0 mAdc

Static DrainSource On Resistance (VDS = 0.1 Vdc)

Drain Gate and Source Gate OnCapacitance (VDS = VGS = 0, f = 1.0 MHz) Drain Gate OffCapacitance (VGS = 10 Vdc, f = 1.0 MHz) Source Gate OffCapacitance (VGS = 10 Vdc, f = 1.0 MHz) 1. Pulse Width = 300 s, Duty Cycle = 3.0%.

5.0 5.0

pF pF

Semiconductor Components Industries, LLC, 2001

June, 2001 Rev. 1

Publication Order Number: J111/D

J111 J112 J113

TYPICAL SWITCHING CHARACTERISTICS
1000 t d(on), TURN-ON DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD J111 J112 J113 TJ = 25C VGS(off) = 12 V = 7.0 V = 5.0 V 1000 500 200 t r , RISE TIME (ns) 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA) 20 30 50 RK = 0 RK = RD J111 J112 J113 TJ = 25C VGS(off) = 12 V = 7.0 V = 5.0 V

Figure 1. TurnOn Delay Time

Figure 2. Rise Time

1000 t d(off) , TURN-OFF DELAY TIME (ns) 500 200 100 50 20 10 5.0 2.0 1.0 0.5 0.7 1.0 RK = 0 RK = RD

TJ = 25C J111 J112 J113 VGS(off) = 12 V = 7.0 V = 5.0 V

1000 500 200 t f , FALL TIME (ns) 100 50 20 10 5.0 2.0 RK = 0 RK = RD

TJ = 25C J111 J112 J113 VGS(off) = 12 V = 7.0 V = 5.0 V

2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA)

20

30

50

1.0 0.5 0.7 1.0

2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA)

20

30

50

Figure 3. TurnOff Delay Time

Figure 4. Fall Time

+VDD RD SET VDS(off) = 10 V INPUT RGEN 50 50 VGEN RK RGG VGG RT OUTPUT 50

INPUT PULSE tr 0.25 ns tf 0.5 ns PULSE WIDTH = 2.0 s DUTY CYCLE 2.0%

RGG & RK RD(RT ) 50) RD + RD ) RT ) 50

Figure 5. Switching Time Test Circuit

NOTE 1 The switching characteristics shown above were measured using a test circuit similar to Figure 5. At the beginning of the switching interval, the gate voltage is at Gate Supply Voltage (VGG). The DrainSource Voltage (VDS) is slightly lower than Drain Supply Voltage (VDD) due to the voltage divider. Thus Reverse Transfer Capacitance (Crss) or GateDrain Capacitance (Cgd) is charged to VGG + VDS. During the turnon interval, GateSource Capacitance (Cgs) discharges through the series combination of RGen and RK. Cgd must discharge to VDS(on) through RG and RK in series with the parallel combination of effective load impedance (RD) and DrainSource Resistance (rds). During the turnoff, this charge flow is reversed. Predicting turnon time is somewhat difficult as the channel resistance rds is a function of the gatesource voltage. While Cgs discharges, VGS approaches zero and rds decreases. Since Cgd discharges through rds, turnon time is nonlinear. During turnoff, the situation is reversed with rds increasing as Cgd charges. The above switching curves show two impedance conditions; 1) RK is equal to RD, which simulates the switching behavior of cascaded stages where the driving source impedance is normally the load impedance of the previous stage, and 2) RK = 0 (low impedance) the driving source impedance is that of the generator.

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J111 J112 J113

y fs, FORWARD TRANSFER ADMITTANCE (mmhos 20 J112 J111 C, CAPACITANCE (pF) 10 7.0 5.0 Tchannel = 25C VDS = 15 V J113 10 7.0 5.0 Cgd Tchannel = 25C (Cds IS NEGLIGIBLE) Cgs 15

3.0 2.0 0.5 0.7

3.0 2.0 1.5

1.0

2.0 3.0 5.0 7.0 10 ID, DRAIN CURRENT (mA)

20

30

50

1.0 0.03 0.05 0.1

0.3 0.5 1.0 3.0 5.0 VR, REVERSE VOLTAGE (VOLTS)

10

30

Figure 6. Typical Forward Transfer Admittance

Figure 7. Typical Capacitance

200 rds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS)

rds(on), DRAIN-SOURCE ON-STATE RESISTANCE (NORMALIZED)

IDSS = 10 160 mA 120 80 40 0

25 mA

50 mA

75 mA 100 mA

125 mA

2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -70 -40 -10 20 50 80 110 Tchannel, CHANNEL TEMPERATURE (C) 140 170 ID = 1.0 mA VGS = 0

Tchannel = 25C

1.0

2.0 3.0 4.0 5.0 6.0 VGS, GATE-SOURCE VOLTAGE (VOLTS)

7.0

8.0

Figure 8. Effect of GateSource Voltage On DrainSource Resistance

Figure 9. Effect of Temperature On DrainSource OnState Resistance

100 rds(on), DRAIN-SOURCE ON-STATE RESISTANCE (OHMS) 90 80 70 60 50 40 30 20 10

9.0 8.0 7.0 6.0 VGS(off) 5.0 4.0 3.0 2.0 1.0

rDS(on) @ VGS = 0

0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 IDSS, ZERO-GATE-VOLTAGE DRAIN CURRENT (mA)

Figure 10. Effect of IDSS On DrainSource Resistance and GateSource Voltage

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VGS, GATE-SOURCE VOLTAGE (VOLTS)

Tchannel = 25C

10

NOTE 2 The ZeroGateVoltage Drain Current (IDSS), is the principle determinant of other J-FET characteristics. Figure 10 shows the relationship of GateSource Off Voltage (VGS(off) and Drain Source On Resistance (rds(on)) to IDSS. Most of the devices will be within 10% of the values shown in Figure 10. This data will be useful in predicting the characteristic variations for a given part number. For example: Unknown rds(on) and VGS range for an J112 The electrical characteristics table indicates that an J112 has an IDSS range of 25 to 75 mA. Figure 10, shows rds(on) = 52 Ohms for IDSS = 25 mA and 30 Ohms for IDSS = 75 mA. The corresponding VGS values are 2.2 volts and 4.8 volts.

J111 J112 J113

PACKAGE DIMENSIONS TO92 (TO226) CASE 2911 ISSUE AL
A R P L
SEATING PLANE

NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 ---

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D J C SECTION XX N N

DIM A B C D G H J K L N P R V

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J111/D