PD-95265 IRF7811AVPbF IRF7811AVPbF

N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 100% RG Tested Lead-Free Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRF7811AV has been optimized for all parameters that are critical in synchronous buck converters including RDS(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7811AV offers an extremely low combination of Qsw & RDS(on) for reduced losses in both control and synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application.

S S S G

8 7

A A D D D D

SO-8

Top View

DEVICE CHARACTERISTICS
IRF7811AV 11 m 17 nC 6.7 nC 8.1 nC

RDS(on) QG QSW QOSS

Absolute Maximum Ratings

Parameter
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Output Current (VGS 4.5V) Pulsed Drain Current TA = 25C TL = 90C = 25C

Symbol
VDS VGS ID IDM PD TJ , TSTG IS ISM

IRF7811AV
30 20 10.8 11.8 100 2.5 3.0 -55 to 150 2.5 50

Units
V

T Power Dissipation e T
Junction & Storage Temperature Range Continuous Source Current (Body Diode) Pulsed Source Current

L = 90C

W C A

Thermal Resistance

eh Maximum Junction-to-Lead h
Maximum Junction-to-Ambient

Parameter

Symbol
RJA RJL

Typ

Max
50 20

Units
C/W

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IRF7811AVPbF
Electrical Characteristics
Parameter Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Leakage Current Total Gate Charge, Control FET Total Gate Charge, Synch FET Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol Min V(BR)DSS 30 RDS(on) VGS(th) IDSS IGSS Qg Qg Qgs1 Qgs2 Qgd QSW QOSS RG td(on) tr td(off) tf Ciss Coss Crss 1.0 0.5 Typ 11 17 14 3.4 1.6 5.1 6.7 8.1 8.6 21 43 10 723 46 Max Units Conditions V VGS = 0V, ID = 250A 14 3.0 50 20 100 26 21 12 4.4 pF ns VDD = 16V ID = 15A VGS = 5.0V Clamped Inductive Load VGS = 0V VDS = 10V VDS = 16V, VGS = 0 VDS = 16V, ID = 15A m VGS = 4.5V, ID = 15A V A A nA nC VDS = 30V, VGS = 0V VDS = 24V, VGS = 0V VGS = 20V VDS = 24V, ID = 15A, VGS = 5.0V VGS = 5.0V, VDS < 100mV VDS = VGS, ID = 250A

mA VDS = 24V, VGS = 0V, TJ = 100C

100

1801

Diode Characteristics
Parameter Diode Forward Voltage Reverse Recovery Charge Reverse Recovery Charge (with Parallel Schottsky) Symbol Min VSD Qrr Qrr Typ 50 43 Max Units 1.3 V nC nC Conditions TJ = 25C, IS = 15A ,VGS = 0V

di/dt = 700A/s VDD = 16V, VGS = 0V, ID = 15A di/dt = 700A/s , (with 10BQ040) VDD = 16V, VGS = 0V, ID = 15A

Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. Typ = measured - Qoss Typical values of RDS(on) measured at VGS = 4.5V, QG, QSW and QOSS measured at VGS =5.0V, IF = 15A. R is measured at TJ approximately 90C

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IRF7811AVPbF
RDS(on) , Drain-to-Source On Resistance
2.0

I D = 15A

1.5

VGS , Gate-to-Source Voltage (V)

V GS = 4.5V
-60 -40 -20 0 20 40 60 80 100 120 140 160

ID = 15A VDS = 16V

(Normalized)

1.0

0.5

0.0

0 0 5 10 15 20

T J , Junction Temperature

( C)

Q G, Total Gate Charge (nC)

Figure 1. Normalized On-Resistance vs. Temperature

RDS(on) , Drain-to -Source On Resistance ( )
0.020

Figure 2. Gate-to-Source Voltage vs. Typical Gate Charge

3000 V GS = 0V, f = 1 MHZ Ciss = C gs + C gd , Cds SHORTED Crss = C gd Coss = C ds + C gd

I D = 15A
0.018

2500

C, Capacitance(pF)

0.016

2000

Ciss Coss

0.014

1500

0.012

1000

0.010

500

Crss
0.008 3.0 6.0 9.0 12.0 15.0

0 1 10 100

V GS, Gate -to -Source Voltage (V)

V DS , Drain-to-Source Voltage (V)

Figure 3. Typical Rds(on) vs. Gate-to-Source Voltage

100

Figure 4. Typical Capacitance vs. Drain-to-Source Voltage

100

I D , Drain-to-Source Current (A)

T = 150 C J
10

ISD , Reverse Drain Current (A)

T = 150 C J
10

T = 25 C J

T = 25 C J
1

0.1

V DS = 15V 20s PULSE WIDTH 2.0 2.5 3.0 3.5 4.0 4.5 5.0

0.1

V GS= 0 V
0.3 0.6 0.9 1.2 1.5

V GS, Gate-to-Source Voltage (V)

V SD ,Source-to-Drain Voltage (V)

Figure 5. Typical Transfer Characteristics

Figure 6. Typical Source-Drain Diode Forward Voltage

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IRF7811AVPbF
100

Thermal Response(Z thJA )

D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 1000 PDM t1 t2

10

0.1 0.0001

t1, Rectangular Pulse Duration (sec)

Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

50 u

8V

5 uH Schottky -6A VDD 450 125nS Repetition rate:100Hz 50 u

16Vz500mW

Mic4452BM

450

50 Ohms probe

V ds 90%

10% Vgs
t d(on) t f(v) t d(off) t r (v)

Switching Time Waveforms

Figure 8. Clamped Inductive load test diagram and switching waveform

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IRF7811AVPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
D A 5 B
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMETERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00

A1 .0040

8 6 E 1

5 H 0.25 [.010] A

c D E e e1 H K L y

.050 BASIC .025 BASIC .2284 .0099 .016 0 .2440 .0196 .050 8

1.27 BASIC 0.635 BASIC 5.80 0.25 0.40 0 6.20 0.50 1.27 8

6X

e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 C A B y

K x 45

8X L 7

8X c

NOT ES : 1. DIMENS IONING & TOLERANCING PER ASME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR SOLDERING TO A S UBST RAT E. 3X 1.27 [.050]

F OOTPRINT 8X 0.72 [.028]

6.46 [.255]

8X 1.78 [.070]

SO-8 Part Marking

EXAMPLE: T HIS IS AN IRF7101 (MOSFET ) DAT E CODE (YWW) P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = AS S EMBLY S IT E CODE LOT CODE PART NUMBER

INT ERNAT IONAL RECT IFIER LOGO

XXXX F7101

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IRF7811AVPbF
SO-8 Tape and Reel
TERMINAL NUMBER 1

12.3 ( .484 ) 11.7 ( .461 )

8.1 ( .318 ) 7.9 ( .312 )

FEED DIRECTION

NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00 (12.992) MAX.

14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualifications Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.08/04

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