Power Electronics

MUHAMMAD NAVEED IQBAL G.C UNIVERSITY LAHORE

Week
Week 1 Week 2 Week 3 Week 4

Lecture
Introduction to power electronics Solid-state devices used in power electronics
The Power Diode Thyristors GTO Thyristors Power Bipolar Transistors, The Power MOSFET Insulated Gate Bipolar Transistor, DIAC, TRIAC Quiz 1 Diode Rectifiers Single-Phase Controlled Rectifiers Three-Phase Controlled Rectifiers Twelve-pulse and Twenty-four pulse rectifiers; DC to DC conversation, buck converter boost converter, buck-boost converters Isolated converters, forward converters

Class Task

Assignment 1 [OUT]

Week 5 Week 6 Week 7 Week 8

Assignment 1 [IN]

Week
Week 1 Week 2 Week 3 Week 4

Lecture
Introduction to power electronics Solid-state devices used in power electronics
The Power Diode Thyristors Thyristors turn On and Off characteristics Thyristors types,

Class Task

Assignment 1 [OUT] Assignment 1 [OUT]

TRIAC, GTO
The Power MOSFET Insulated Gate Bipolar Transistor, Power Bipolar Transistors, Diode Rectifiers Quiz 1

Week 5 Week 6 Week 7 Week 8

Assignment 1 [IN]

Single-Phase Controlled Rectifiers Three-Phase Controlled Rectifiers Twelve-pulse and Twenty-four pulse rectifiers; DC to DC conversation, buck converter boost converter, buck-boost converters Isolated converters, forward converters

Week
Week 9 Week 10 Week 11 Week 12

Lecture
Flyback converters Quiz 2 [Mid Term]
Single-Phase Voltage Source Inverters, 3-Phase Voltage Source Inverters pulse-width-modulated (PWM) inverters Resonant Switch Quasi-Resonant Converters Zero voltage switch Three-phase inverters Single-Phase AC -AC Voltage Controller, 3-Phase AC-AC Voltage Controllers Quiz 3

Class Task

Assignment 2 [out]

Week 13 Week 14 Week 15 Week 16

Assignment 2 [IN]

Cyclo-converters DC=DC Conversion, Positive Ouput Luo-Converters Negative Ouput Luo-Converters Double Output Luo-Converters Revision Revision

TRIAC
Developed by GE in 1964
Two Thyristors connected in anti-parallel

Bi-directional device can conduct current in either direction

Structure is quite complicated Can be triggered when 2 is +ive with respect to 1 and positive gate is applied w.r.t. M1 Can be triggered when 2 is -ive with respect to M1 and ive gate is applied w.r.t. 1

Limitations
For Thyristors,

during OFF state is shown

Device may go in conduction mode due to during off state

When i= 0, V across it is very different from zero

Has less time than Thyristors to recover its blocking power

rating is lower

SCR Limitations
SCR is nearly an ideal switch
Require a sharp pulse to turn On Block +ive as well as ive V

High V and high I devices are available

Rugged Inability to turn-off by application of a control signal at the gate Inclusion of turn-off, capability in Thyristors requires device modification with some compromise in operational capability

Gate turn-off Thyristors (GTO)

Lower power rating GTO developed by GE in 1961
1981 2.5 kV and 1kA device manufactured by hitacht, toshiba Can be turned on by +ive

Can be turned off by ive

 Four layer structure

Thickness of 2 < that is SCR 2 layer is remover by itching in place where gate contacts are situated These cells are surrounded by gate, they are brought together by a cathode plate

GTO can be seen as a large number of GTO in parallel

 At large intervals n region penetrates P1 layer to make contact with n region

Used to speed up the turn-off process

No reverse blocking capability (only J2 can block ive V, very low)

GTO without anode short can block ive V

Interdigitation
High level of gate interdigitation results in
Even a remote part of cathode region is very near to a gate edge Fast turn On speed

Like SCR only the area of cathode adjacent to the gate electrode is turned on initially and then spreads
Turn on area is large

High di/dt

ON-state characteristics
They are similar to SCR
Gate signal can be removed if > Recommended that +ive is not removed

> of SCR
Under transient condition if below some regions may be turned off

Anode I now at high rate

Could be destructive

ON-state characteristics
During turn peak value of should be large enough to ensure that all cathode islands begin to conduct & there is a sharing of anode I Otherwise, hot spots may result
= 10
ON,

OFF-state characteristics
When Thyristors (or GTO) is ON, both T1 and T2 are in saturation
By 2 , T2 can be brought out of saturation The total saturation current =
2 + 1 1 +2

= 1 + 2
When GTO is in on state, is very small

OFF-state characteristics
=
1 1 +2

is the current required to turn off

2

If = 0, there is a large gate current such that =

2 1 +2 1

2 should be high as possible for transistor N1 P2 N2 i.e should have a high gain 2 layer should be very thin and 2 highly doped

OFF-state characteristics
Gate is reversed biased w.r.t cathode
Holes are extracted from P2 V drop is developed in P-base region

Eventually reverse biased the gate-cathode region and cut off injection of electrons
As holes extraction continue P2 is further depleted

Conduction area decreases

OFF-state characteristics
Anode I flows through the area far away from gate
May be high current density May lead to localized heating

Should be controlled
Device may fail Eventually device turn off

OFF-state characteristics
Turn off of GTO is greatly influenced by turn off circuit
Turn of gain is very low 6-15 Anode current is 100 A than Ig be around 10A

OFF-state characteristics
When gate current starts flowing out anode current remains constant for some time called storage time Snubber circuits must be used