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MICROELECTRONICS CORP.
HTIP107
PNP EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP107 is designed for use in general purpose amplifier and lowspeed switching applications.
TO-220
Maximum Temperatures
Storage Temperature ........................................................................................................ -55 ~ +150 C
Junction Temperature ................................................................................................ +150 C Maximum
Maximum Power Dissipation
Total Power Dissipation (Tc=25C)................................................................................................. 80 W
Total Power Dissipation (Ta=25C)................................................................................................... 2 W
Maximum Voltages and Currents
BVCBO Collector to Base Voltage ............................................................................................... -100 V
BVCEO Collector to Emitter Voltage ............................................................................................ -100 V
BVEBO Emitter to Base Voltage ...................................................................................................... -5 V
IC Collector Current ......................................................................................................................... -8 A
Characteristics (Ta=25C)
Symbol
BVCBO
BVCEO
ICBO
ICEO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(on)
*hFE1
*hFE2
Cob
Min.
-100
-100
1
200
-
Typ.
-
Max.
-50
-50
-8
-2
-2.5
-2.8
20
300
Unit
V
V
uA
uA
mA
V
V
V
K
pF
Test Conditions
IC=-1mA, IE=0
IC=-30mA, IB=0
VCB=-100V, IE=0
VCE=-50V, IB=0
VEB=-5V, IC=0
IC=-3A, IB=-6mA
IC=-8A, IB=-80mA
IC=-8A, VCE=-4V
IC=-3A, VCE=-4V
IC=-8A, VCE=-4V
VCB=-10V, f=0.1MHz
*Pulse Test: Pulse Width 380us, Duty Cycle2%
Darlington Schematic
C
R1
R2
HTIP107
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Current Gain & Collector Current
100000
10000
hFE
1000
o
125 C
75 C
100
o
25 C
75 C
1000
25 C
o
125 C
10
VCE(s at) @ IC=500IB
hFE @ VCE=4V
1
1
10
100
1000
100
100
10000
1000
10000
10000
10000
75 C
1000
25 C
125 C
1000
75 C
25 C
125 C
VCE(sat) @ IC=625IB
100
100
1000
VCE(sat) @ IC=100IB
100
100
10000
1000
10000
10000
ON Voltage (mV)
VCC=30V, IC=250IB1=-250IB2
75 C
25 C
1000
o
125 C
Tstg
1
Tf
Ton
VBE(ON) @ VCE=4V
0.1
100
10
100
1000
HTIP107
10000
10
HI-SINCERITY
MICROELECTRONICS CORP.
1000
100000
Capacitance (pF)
10000
100
Cob
1000
PT=1ms
PT=100ms
100
PT=1s
10
10
1
0.1
10
HTIP107
100
10
100
1000
HI-SINCERITY
MICROELECTRONICS CORP.
TO-220AB Dimension
Marking:
B
A
D
H T I P
1 0 7
Control Code
Date Code
H
K
2
1
4
P
Inches
Min.
Max.
0.2197
0.2949
0.3299
0.3504
0.1732
0.185
0.0453
0.0547
0.0138
0.0236
0.3803
0.4047
*0.6398
DIM
A
B
C
D
E
G
H
Millimeters
Min.
Max.
5.58
7.49
8.38
8.90
4.40
4.70
1.15
1.39
0.35
0.60
9.66
10.28
*16.25
DIM
I
K
M
N
O
P
Inches
Min.
Max.
*0.1508
0.0295
0.0374
0.0449
0.0551
*0.1000
0.5000
0.5618
0.5701
0.6248
Millimeters
Min.
Max.
*3.83
0.75
0.95
1.14
1.40
*2.54
12.70
14.27
14.48
15.87
Notes: 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
Lead: 42 Alloy; solder plating
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
HSMC reserves the right to make changes to its products without notice.
HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HTIP107