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Small Signal Low Noise Transistors (NPN) 2N5088/2N5089

Small Signal Low Noise Transistors (NPN)


Features
NPN silicon epitaxial transistor for switching and amplifier applications This device is designed for low noise, high gain, general purpose applications at collector currents from 1A to 50mA RoHS compliance

Mechanical Data
Case: Terminals: Weight: TO-92, Plastic Package Solderable per MIL-STD-202G, Method 208 0.18 gram

TO-92

Absolute Maximum Ratings* (T Ambient=25C unless noted otherwise)


Symbol Description Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Continuous Operation and Storage Junction Temperature Range 2N5088 30 35 4.5 100 -55 to +150 2N5089 25 30 Unit V V V mA C

VCEO VCBO VEBO IC TJ ,TSTG

* These ratings are limiting values above which the serviceability of any semiconductor device may be
impaired.

Notes
1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com


Tel: (800)-TAITRON Fax: (800)-TAITFAX (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415

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Small Signal Low Noise Transistors (NPN) 2N5088/2N5089


Thermal Characteristics (T Ambient=25C unless noted otherwise)
Symbol Description Power Dissipation at TA=25C 2N5088 625 5.0 1.5 12 357 125 -55 to +150 2N5089 Unit mW mW/ C W mW/ C C/W C/W C

PD
Derate above 25C Power Dissipation at TC=25C

PD
Derate above 25C

RJA RJC TJ ,TSTG

Thermal Resistance Junction to Ambient Air (Note 1) Thermal Resistance Junction to Case Operation and Storage Junction Temperature Range

Note: 1. Measured with the device soldered into a typical printed circuit board.

Electrical Characteristics (T Ambient=25C unless noted otherwise)


Off Characteristics
Symbol Description Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector CutOff Current 2N5088 Min. 35 30 Max. 50 2N5089 Min. 30 25 Max. 50 nA Unit V V Conditions IC=100A, IE=0 IC=1mA, IB=0

V(BR)CBO V(BR)CEO* ICBO

VCB=20V, IE=0 50 VEB=3V, IC=0

VCB=15V, IE=0 100 VEB=4.5V, IC=0

IEBO

Emitter CutOff Current

nA

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Small Signal Low Noise Transistors (NPN) 2N5088/2N5089


On Characteristics
Symbol Description 2N5088 Min. 300 Max. 900 0.5 0.8 2N5089 Min. 400 450 400 Max. 1200 0.5 0.8 V V Unit Conditions VCE=5V, IC=0.1mA VCE=5V, IC=1mA

hFE

D.C. Current Gain

350 300

*VCE=5V, IC=10mA
IC=10mA, IB=1mA IC=10mA, VCE=5V

VCE(sat) VBE(on)*

Collector Emitter Saturation Voltage Base Emitter Saturation Voltage

Small signal Characteristics


Symbol Description Current Gain-Bandwidth Product Collector-Base Capacitance Emitter-Base Capacitance Small Signal Current Gain Noise Figure 2N5088 Min. 50 350 Max. 4.0 10 1400 3.0 2N5089 Min. 50 450 Max. 4.0 10 1800 2.0 dB Unit MHz pF pF Conditions VCE=5V, IC=0.5mA, f=20MHz VCB=5V, f=100KHz VEB=0.5V, f=100KHz VCE=5V, IC=1mA f=1KHz VCE=5V, IC=100A, Rs=10K, f=10Hz to 15.7 KHz

fT Ccb Ceb hfe NF

*Pulse Test: Pulse Width<300s, Duty Cycle<2%

Rev. B/NX www.taitroncomponents.com Page 3 of 5

Small Signal Low Noise Transistors (NPN) 2N5088/2N5089


Dimensions in mm
TO-92

Rev. B/NX www.taitroncomponents.com Page 4 of 5

Small Signal Low Noise Transistors (NPN) 2N5088/2N5089

How to contact us:


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Rev. B/NX www.taitroncomponents.com Page 5 of 5

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