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SiGe 77GHz Automotive Radar Technology

W.M. Huang, J. P. John, S. Braithwaite, J. Kirchgessner, I.S. Lim, D. Morgan, Y.B. Park, S. Shams, I. To, P. Welch
Wireless and Packaging Systems Laboratory Technology Solutions Organization Freescale Semiconductor Inc Tempe, AZ, USA
AbstractRecent advancements in SiGe device development enable the realization of 77GHz automotive long range radar systems using relatively low-cost silicon technology. This paper will discuss technology requirements for the radar design and present examples of receiver and transmitter circuit implementations.

R. Reuter, H. Li, A. Ghazinour, P. Wennekers, Y. Yin,


RF/IF Innovation Center Technology Solutions Organization Freescale Halbleiter Deutschland GmbH Munich, Germany One of the critical criteria for successful volume deployment of the long range radar system is to base the technology on a low-cost manufacturing semiconductor processing line. A low cost, qualified 0.18 m BiCMOS platform designed for wireless RF transceiver products with a 50GHz fT and 110GHz fMAX SiGe:C HBT device [5] is used as the baseline technology. The baseline process utilizes only shallow trench isolation and implanted collector to minimize overall process complexity. A combination of high-energy implanted collector well and a implanted low resistivity sub-isolation buried layer (SIBL) under selected regions of the shallow trench isolation provides low collector resistance while avoiding the more traditional (and expensive) buried layer/epi plus deep trench isolation modules [6]. In order to achieve the 200GHz fT and 300GHz fMAX performance targets, the HBT device top structure is modified from a simple quasi-self-aligned structure, with the extrinsic base to emitter dimension set by lithography alignment, to a self-aligned structure with selective SiGe:C base epi integration. Fig. 1 shows the 200GHz xHBT structure, which combines the implanted low resistivity sub-isolation SIBL region with a self-aligned, selective-epi base top structure.

I.

INTRODUCTION

Interest in automotive pre-crash safety electronics is growing as car makers and governments switch the focus from protection to prevention in reducing traffic accidents and casualties. Different sensor options are used to provide safety functions, including: a) long-range radar for applications including Adaptive Cruise Control (ACC), collision avoidance and pedestrian detection and b) short range radar and/or camera system for such uses as blind spot monitoring, lane departure warning and parking aid. To date, the deployment of such systems, especially the 77GHz longrange radar systems, is limited to luxury car models due to the high semiconductor and system cost. Recent advancements in SiGe technology (with device fMAX of over 300GHz, good noise figure and high breakdown voltage) enable the realization of 77GHz radar systems using silicon technology. The reduced semiconductor cost, coupled with packaging and system optimization, will ultimately allow deployment of these systems in economy car models. This paper will discuss technology requirements for the 77GHz radar design and present examples of receiver and transmitter circuit implementations. We also will discuss the challenges faced in realizing mm-wave silicon integrated circuit volume production. . II. TECHNOLOGY

Silicon germanium (SiGe) HBT BiCMOS technologies have become the primary technology for mobile handset transceiver applications [1]. More recently, as the SiGe:C HBT device performance exceeded 200GHz fT / fMAX, it becomes feasible to use Si technology for the millimeterwave markets that had been dominated by III-V compound semiconductors. Transceiver circuits for 60GHz wireless Figure 1. Illustration of the xHBT device. personal area networks (WPAN) [2] and 77Ghz automotive radar applications [3,4] using SiGe:C BiCMOS / Bipolar technology already show promising results. 1967 1-4244-0921-7/07 $25.00 2007 IEEE.

Aggressive vertical emitter/base profile optimization in conjunction with significant reduction in extrinsic base resistance and utilization of spike anneal for the final emitter anneal, allowed us to successfully achieve SiGe:C device with peak fT of 195GHz and fMAX of 290GHz while maintaining the baseline CMOS device characteristics and allowed the re-use of the digital design library [7]. Table 1 compares some of the key device parameters of the optimized xHBT to the earlier HBT versions. Fig. 2 shows optimized device fT/fMAX performance. This development approach of leveraging the same BiCMOS platform while providing different HBT devices dependent on the target application frequencies reduces risk, shortens technology development time and reduces investment in design kit.
TABLE I SIGE:C HBT PARAMETER COMPARISON (0.18 M HBTS) 0.18 m Enhanced xHBT HBT [6] [7] Units HBT [5] 0.25x10 0.25x10 0.15x10 m2 -120 360 600 k /sq fF fF V V V GHz GHz
2 1

4 show device fT / BVCBO and fT / fMAX scaling of the SiGe HBT device. The xHBT device targets breakdown voltage of >6V in order to deliver the required output power. The breakdown voltage target determines the range of the device fT target. Given the device fT target, through aggressive reduction of parasitic extrinsic base resistance, the xHBT device achieves a fMAX close to 300GHz. This is the highest known fMAX for a SiGe:C HBT using low-cost CMOS factory compatible implanted collector structure [8,9].

AE Beta RBI CJE CJC BVEBO 1 BVCEO fT fMAX


1

1.8 23 14 4.1 3.3 12.3 502 1102

4.8 31 17.1 2.0 1.8 6.2 1202 1202


3

4.5 24 15.5 1.2 2.0 6.2 195 3 290 3 Figure 3. SiGe HBT device fT and BVCBO tradeoff showing published data between 1999 and 2006.

BVCBO 1

1 A

VCE = 2.0V

VCE = 1.5V

300

(GHz)
MAX

250 200 150 100 50 0 -5 10 10


-4

f and f

Figure 4. SiGe HBT device fT / fMAX scaling showing published data between 1999 and 2006.

10

-3

10

-2

10

-1

IC (A)
Figure 2. fT and fMAX (VCE=1.5V) for the optimized xHBT device (AE ~0.15x10um2). Showing peak fT/fMAX of 195/290GHz extrapolated from 10GHz.

The 77GHz radar receiver and transmitter circuits require high operating frequency, low noise and high output power devices. These requirements demand careful balance of the HBT device fT/fMAX and breakdown optimization. Figs. 3 and

In additional to the SiGe HBT device, the technology also provides passive elements including transmission line, MIM capacitors and thin film resistors. The baseline BiCMOS process provides five layer Cu-metal with thick last metal option. The micro-strip transmission lines are constructed using metal 1 as backplane and the thick top metal as the active signal line. With this combination a typical 50 transmission line shows a loss of ~1.25 dB/mm at 77 GHz (Fig. 5). Transmission lines with various center line width (W = 3 m up to 20 m) were used to realize different

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characteristic wave impedances, which enables a variety of matching elements.


0.0

microstrip line

Metal 5 Signal
-0.5

Metal 1 Ground

|S21| /dB of 1mm 50

-1.0

Figure 7. Chip photo of the 4 stage low-noise amplifier, incorporating a variable gain stage, complete biasing circuitry with enable/disable switching logic; chip size: approx. 1.8 0.7 mm2.

-1.5

-2.0

20

40

60

80

100

120

The amplifier is comprised of 4 cascode-HBT stages, which provide high gain with reasonable noise performance. The amplifier is designed for a single supply voltage VCC of 3.3 V. Fig. 7 is the chip photo of the fabricated LNA. The first two cascode stages mainly dominate the overall noise figure of the LNA. Both stages are optimized by the noise measure method (a compromise between gain and noise). In the first stage, an inductive degeneration realized by a micro-strip transmission line is used to get an optimum compromise between gain and noise matching. The third stage is biased at high gain conditions and the last stage is biased via an adjustable current mirror to realize a variable gain stage. All stages are DC decoupled by integrated MIM capacitors. The input and output of the circuit are matched to 50 by a set of micro-strip transmission lines. The interstage matching is also realized with transmission lines. The typical noise and gain characteristics of the realized lownoise amplifier are shown in Fig. 8. At a frequency of 77 GHz the LNA shows lowest noise figure of 6.2 dB with associated high gain of 12 dB. At 77 GHz the gain can be adjusted in the range from 0 dB up to 33 dB with the gain control voltage set between 1.4 and 2.2V without influencing the input and output matching.

frequency f /GHz

Figure 5. Measured transmission coefficient |S21| of a 50 strip transmission line vs. frequency.

micro-

III.

CIRCUITS

For fast and accurate simulations of the high frequency behavior, VBIC models for the xHBTs, scalable models for the MIM capacitors, thin film resistors and micro-strip transmissions are implemented into the Advanced Design System (ADS) from Agilent. All models are extracted based on s-parameter measurements in the frequency range up to 110 GHz. A. Receiver

Figure 6. Block diagram of a typical receiver chip.

Fig. 6 shows the block diagram of a typical receiver channel in the radar system. The LNA is a critical element in the receiver chain determining the receiver noise and gain. A low noise high gain LNA with noise figures of ~6.2dB and adjustable gain up to 33dB at 77GHz is realized using the xHBT technology [10].

Figure 8. 50 noise figure and corresponding transducer gain of the LNA at various variable gain control voltages VG.

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B. Transmitter

Fig.10 is a chip photo of the realized transmitter chip. The measurement results are shown in Fig.11. The oscillation frequency can be tuned from 76.1 GHz to 79.9 GHz by the tuning voltage (Vtune) and the averaged output power is about 14 dBm per single-ended output at room temperature (differential output power ~17 dBm). The output of the Buf1 drives also a two stage dynamic frequency divider by four. This two stage dynamic frequency divider with an output buffer works in the full tuning range and has the single-ended output power of -2 dBm. The performance of the realized transmitter chip has also been tested from -40 C up to 125 C and shows an output power deviation of -3 dBm and a frequency temperature dependence of -24 MHz/C. IV. CONCLUSIONS

Figure 9. Simplified block diagram of the realized transmitter chip.

Fig.9 shows a simplified block diagram of the realized transmitter chip, which consists of a 77 GHz VCO, powerful output circuits (BUF1 and MPA) and a dynamic frequency divider by four. The VCO core generates the 77 GHz oscillation signal with a large frequency tuning range. The VCO signal is amplified by the buffer and the MPA and drive the external antenna or the LO of the receivers. The collectorbase capacitance of HBTs is used as the VCO varactors to tune the oscillation frequency. Micro-strip transmission lines are used in the VCO tank and in the output matching network because of its low loss, ease of design and modeling. The frequency divider by four is designed with two stage dynamic frequency divider due to its low power consumption.
Pout1 Pout1N BUF1+MPA

We have described the realization of a SiGe:C BiCMOS technology and have demonstrated critical circuit functions applicable for the 77GHz automotive radar system using this technology. Integrated receiver and transmitter circuits will be described in [11]. Commercialization of these SiGe:C chipsets would require proven reliability and yield over temperature on a low-cost package.
ACKNOWLEDGMENT The authors wish to acknowledge the Austin Technology and Manufacturing Center, Oak Hill Fab, and the Arizona and Texas Analytical Labs for outstanding wafer processing and analytical support. We also wish to acknowledge the continuous support of the Wireless and Packaging Systems Laboratory and the CMOS Platform EMEA R&D Laboratory.
REFERENCES S. Smyser, Wireless communications semiconductor supplier market shares, iSuppli Topical Report, May 2006. [2] B. Floyd, S. Reynolds, U. Pfeiffer, T. Beukema, J. Grzyb, and C. Haynes, A silicon 60GHz receiver and transmitter chipset for broadband communications, ISSCC Digest of Technical Papers, pp. 184-185, February 2006. [3] H. Li, H.-M. Rein, T. Suttorp, and J. Bock, Fully integrated SiGe VCOs with powerful output buffer for 77-GHz automotive radar systems and applications around 100GHz, IEEE J. Solid-State Circuits, vol. 39, no. 10, pp. 1650-1658, October 2004. [4] B. Dehlink, H.-D. Wohlmuth, K. Aufinger, T. F. Meister, J. Bock, and A. L. Scholtz A low-noise amplifier at 77GHz in SiGe:C bipolar technology, Compound Semiconductor Integrated Circuit Symposium , pp. 287-290, October 2005. [5] J. Kirchgessner, et al, A 0.18 m SiGe:C RFBiCMOS technology for wireless and gigabit optical communication applications, Proc. BCTM, pp. 151-154, 2001. [6] J. P. John, et al, Optimization of a SiGe:C HBT in a BiCMOS technology for low power wireless applications, Proc. BCTM, pp. 193-196, 2002. [7] J. P. John, et al, Development of a cost-effective, selective-epi, SiGe:C HBT for millimeter-wave applications, Proc. BCTM, pp. 134-137, 2006. [8] P. Chevalier, et al, Low-Cost Self-Aligned SiGeC HBT Module for High-Performance Bulk and SOI RFCMOS Platforms, IEDM Tech. Dig., pp 983-986, 2005. [9] B. Heinemann, et al, A Low-Parasitic Collector Construction for High-Speed SiGe:C HBTs, IEDM Tech. Dig., pp 251-254, 2004. [10] R. Reuter, Yi Yin, A 77 GHz (W-band) SiGe LNA with a 6.2 dB Noise Figure and Gain Adjustable to 33 dB, Proc. BCTM, pp. 247250, 20 [11] R. Reuter, et al, Fully integrated SiGe-BiCMOS teceiver (RX) and transmitter (TX) chips for 76.5GHz FMCW automotive radar systems including demonstrator board design, to be published IMS 2007. [1]

1/4 DFD 1.57 mm Osc. Core Vtune

BUF2 for 1/4 DFD

1.72 mm

Figure 10. Chip photo of the realized transmitter chip. Chip size is 1.721.57 mm2.

Figure 11. Measurement results of the tuning characteristics of the transmitter chip.

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