ELN 131 Lab 1 The Silicon P-N Junction Diode Objectives: Upon completion of this lab exercise the

student will be able to: 1. 2. 3. 4. 5. 6. Recognize the schematic symbol of a P-N junction diode. Identify the anode and the cathode of a diode on the schematic symbol and on a real diode. Perform static tests on a silicon diode using an ohmmeter. Describe the voltage/current characteristics of a forward biased silicon P-N junction. Describe the characteristics of a reverse biased P-N junction. Obtain information from a rectifier diode data sheet.

Parts and Equipment: 1N4001 diode 470 5%, 1/2W resistor 1M 5%, 1/4W resistor 5k potentiometer 2-DMMs and leads 0V to 25V DC power supply and leads Breadboard and wire as needed Prelab: Instructor Initials 1. Complete Section 1: Step 1 and Step 2. Section 1: Testing a P-N Junction Diode using a DMM The digital multi-meter (DMM), when used as an ohmmeter, can be used to perform basic functional tests on a P-N junction diode. This means that the test can determine if the diode is shorted or opened, or appears to be functioning properly. The proper resistance range must be selected for the meter to supply enough current to forward bias the P-N junction. For most DMMs this is the 2k range and is normally denoted with a small diode picture. When a DMM makes a resistance measurement, the meter actually displays the voltage dropped across the component. Connecting the meter with the positive lead to the anode and the negative lead to the cathode will forward bias the P-N junction. The meter will display the voltage dropped across the P-N junction, which will typically be between

0.6V and 0.7V for a silicon device. The display is interpreted as being between 0.6k and 0.7k. Connecting the meter with the positive lead to the cathode and the negative lead to the anode will reverse bias the P-N junction. The voltage dropped across the P-N junction will be greater than 1.999V, and an over-range condition (1.---) will appear on display. The display is interpreted as being larger than 1.999k. Step 1: Figure 1 shows the schematic symbol for a diode. Label the anode and cathode terminals. Step 2: Figure 1 shows a pictorial drawing of a diode. Label the anode and cathode terminals. anode cathode anode cathode

Figure 1: Diode Schematic Symbol and Pictorial

Step 3: Set the function control of the DMM to make a resistance measurement. Select the 2k range. Connect the ohmmeter as indicated in Table 1. Record the displayed resistance measurements for each connection. Anode + Cathode + Meter Reading .781 Over range

Table 1: Diode Test with an Ohmmeter

Section 2: Forward Biased P-N Junction The anode of a P-N junction diode is made up of P-type semiconductor material, and the cathode is made up of N-type semiconductor material. By applying an external voltage that makes the anode more positive than the cathode, the depletion region will become narrower. The free electrons in the N-type material can overcome the barrier potential across the narrow depletion region and flow into the P-type material if they gain enough energy. The free electrons in the N-type material of junction diode gain energy from a voltage source. A P-N junction is forward biased when a voltage is applied such that the anode is more positive than the cathode and the current increases proportionally to an increase in the

applied voltage. The typical voltage required to forward bias a silicon P-N junction is 0.7V

Figure 2: Forward Biased Diode Test Circuit

Step 1: Construct the circuit shown in Fig. 2. The DMM used to measure voltage must be in the 2V range, and the DMM used to measure current must initially be in the 20mA range. Step 2: Adjust the 5k potentiometer such that 560mV is dropped across the diode. Measure the current flow through the diode. Record the measured current in Table 2. Step 3: Repeat the procedure of Step 2 for the remaining values in Table 2. Increase the range selection of the ammeter when necessary. VD 560mV 580mV 600mV 620mV 640mV 660mV I 1.50mA 2.57mA 3.46mA 5.17mA 7.51mA 11.1mA VD 680mV 700mV 710mV 720mV 730mV 740mV I 16.4mA 23.7mA 28.3mA 35.2mA 41.8mA 51.6mA

Table 2: Forward Biased Current Data

Step 4: Use Excel to create a scatter plot (select the chart sub-type that connects the data points with smoothed lines) of the data in Table 2. Include a print out of the scatter plot with the lab document. Save this spreadsheet file for use in the Questions at the end of the lab.

Section 3: Reverse Biased P-N Junction By applying an external voltage that makes the cathode more positive than the anode, the depletion region will become wider. The free electrons in the N-type material cannot typically overcome the barrier potential across the wide depletion region and flow into the P-type material. However, a small amount of current does flow from the cathode to the anode. This small current flow is due to the minority carriers in the P-type and the N-type materials. A P-N junction is assumed to be reversed biased when the current does not increase proportionally to an increase in the applied voltage.

Figure 3: Reverse Biased Diode Test Circuit

Step 1: Construct the circuit shown in Figure 3. Step 2: Measure the voltage dropped across the 1M resistor. Record the measured voltage drop in Table 3. Step 3: Use Ohms law to calculate the current flow through the diode. Record the reverse-bias diode current in Table 3. Voltage across 1M 25V Reversed bias current (IR) 32.0nA

Table 3: Reverse Biased Current Data

Step 4: Refer to the manufacturers data sheet for the 1N4001 diode. What is the typical value for the Maximum Reverse Current, IR, at TJ=258C? Max reverse current 30s Ir - 50A Tj = Burnt??!

How does this compare with the value recorded in Table 3? Looks to matchup pretty well. Questions: 1. Draw the schematic symbol for a junction diode. Label the anode and the cathode.

- Cathode + Anode

2. The band denotes which lead of a diode, the anode or the cathode? Cathode 3. When using a DMM to test a junction diode, which range should be selected? Between 0.5 V and 0.9 V (typically. 0.7 V) The diode range is used Why? The test voltage applied by the meter will be high enough to overcome the forward junction potential and the diode will conduct 4. Assume that the DMMs shown below have been set to the proper function and range for testing silicon junction diodes. Determine if the diodes shown in A, B, and C are open, shorted, or functioning properly. Functioning Proper Open Shorted

5. Using the scatter plot created in Section 2, Step 4 and a straight-edge, extend the linear portion of the response curve to intersect with the x-axis. What is the voltage at this point? (This can also be accomplished in Excel. Under PASTE FUNCTION, click on STATISTICAL, then choose INTERSECTION. Select the cells that are in the linear portion of the curve. You will have to reverse the x and y data values to find the x-axis intersection.) How does this voltage value compare with the typical forward-bias voltage value of 0.7V? Drops very quickly, but I see a good elbow. Refer to the scatter plot created in Section 2, Step 4. Determine the forward bias resistance of the silicon P-N junction. This is accomplished by finding x/y over the linear section of the response curve. (This can also be accomplished in Excel. Under PASTE FUNCTION, click on STATISTICAL, then choose SLOPE. Select the cells that are in the linear portion of the curve. You will have reverse the x and y data values to find resistance.) 6. Shockleys equation (Eq. 1) describes the forward bias current, IF, through a P-N junction as a function of the forward bias voltage, VF. Eq.1

IF = IR ( e V

Fq / KT

1)

Where: IR is the reverse saturation current q is the charge of one electron (1.9x10-19 C) K is Boltzmans constant (1.38x10-23 J/K) T is the temperature in Kelvin Use Excel to plot Shockleys equation. Plot this graph along with the scatter plot from Section 2, Step 4. Use the voltage values from Table 2 for VF and the following values: T=298K IR=20nA Compare the two graphs. : Pretty much same path.. 6