Homework

Feb. 20, 2013 This homework is intended for you to work on while I am away for the Fulbright- Nehru conference in Cochi. It is a little complicated, and you must pay close attention to your units, but in the end I think it will turn out to be simple enough. Consider the following data for the capacitance of the space charge layer for two samples of the same semiconductor with the same relative permittivity, but different dopant concentrations. These semiconductors are rather highly doped (which should give you a hint about the possible answers in units of per cubic centimeter!). Potential (Volts vs Semicond. 1, SC Farads Semicond. 2, SC Farads Ag/AgCl) 0.10 0.001042572 0.002146694 0.05 0.001080844 0.002241679 0.00 0.001125801 0.002363597 -0.05 0.001177694 0.00248452 -0.10 0.001239394 0.002599376 -0.15 0.001311934 0.002742042 -0.20 0.001397542 0.002886751 The relative permittivity of the medium is 12.0. The permittivity of free space is 8.854x10-12 F/m. Be very careful of units and of surface area! The relationship between the Mott-Schottky slope and the donor density (this is an n-type semiconductor) is as follows:

m=

2 N d eA 2 0

1) Calculate the donor density of each semiconductor. Which is more highly doped? 2) If this material is hematite (Fe2O3), what percentage of all Fe atoms in the structure is a donor dopant for the most highly doped sample? 3) What is the flatband potential of each sample? 4) Given that the pH = 13.6 for these measurements, what is the flatband potential of hematite at pH 7 on the SHE scale?