1 Thyristor / Diode Modules SKKL 92 SKMT 92 Features
Heat transfer through aluminium
oxide ceramic isolated metal baseplate
Hard soldered joints for high
reliability
UL recognized, file no. E 63 532
Typical Applications*
Line rectifiers for transistorized
AC motor controllers (SKKL)
DC braking of AC motor (SKMT)
1) See the assembly instructions SKMT SKKL V RSM V RRM , V DRM l TRMS = 150 A (maximum value for continuous operation) V V l TAV = 95 A (sin. 180; T c = 85 C) 900 800 SKMT 92/08E 1300 1200 SKKL 92/12E 1500 1400 SKMT 92/14E 1700 1600 SKMT 92/16E SKKL 92/16E 1900 1800 SKMT 92/18E Symbol Conditions Values Units l TAV sin. 180; T c = 85 (100) C; 95 (68 ) A l D P3/180; T a = 45 C; B2 / B6 70 / 85 A P3/180F; T a = 35 C; B2 / B6 140 /175 A l RMS P3/180F; T a = 35 C; W1 / W3 190 / 3 * 135 A l TSM T vj = 25 C; 10 ms 2000 A T vj = 125 C; 10 ms 1750 A it T vj = 25 C; 8,3 ... 10 ms 20000 As T vj = 125 C; 8,3 ... 10 ms 15000 As V T T vj = 25 C; l T = 300 A max. 1,65 V V T(TO) T vj = 125 C max. 0,9 V r T T vj = 125 C max. 2 mO l DD ; l RD T vj = 125 C; V RD = V RRM ; V DD = V DRM max. 20 mA t gd T vj = 25 C; l G = 1 A; di G /dt = 1 A/s 1 s t gr V D = 0,67 * V DRM 2 s (di/dt) cr T vj = 125 C max. 150 A/s (dv/dt) cr T vj = 125 C max. 1000 V/s t q T vj = 125 C , 100 s l H T vj = 25 C; typ. / max. 150 / 250 mA l L T vj = 25 C; R G = 33 O; typ. / max. 300 / 600 mA V GT T vj = 25 C; d.c. min. 3 V l GT T vj = 25 C; d.c. min. 150 mA V GD T vj = 125 C; d.c. max. 0,25 V l GD T vj = 125 C; d.c. max. 6 mA R th(j-c) cont.; per thyristor / per module 0,28 / 0,14 K/W R th(j-c) sin. 180; per thyristor / per module 0,3 / 0,15 K/W R th(j-c) rec. 120; per thyristor / per module 0,32 / 0,16 K/W R th(c-s) per thyristor / per module 0,2 / 0,1 K/W T vj - 40 ... + 125 C T stg - 40 ... + 125 C V isol a. c. 50 Hz; r.m.s.; 1 s / 1 min. 3600 / 3000 V~ M s to heatsink 5 15 % 1) Nm M t to terminals 3 15 % Nm a 5 * 9,81 m/s m approx. 95 g Case SKMT A 72 SKKL A 59 SKMT 92, SKKL 92 THYRISTOR BRIDGE,SCR,BRIDGE 1 04-04-2007 GIL by SEMIKRON Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 2L Power dissipation per module vs. rms current Fig. 2R Power dissipation per module vs. case temp. Fig. 3L Power dissipation of two modules vs. direct current Fig. 3R Power dissipation of two modules vs. case temp. RECTIFIER,DIODE,THYRISTOR,MODULE 2 04-04-2007 GIL by SEMIKRON Fig. 4L Power dissipation of three modules vs. direct and rms current Fig. 4R Power dissipation of three modules vs. case temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time SKMT 92, SKKL 92 THYRISTOR BRIDGE,SCR,BRIDGE 3 04-04-2007 GIL by SEMIKRON Fig. 9 Gate trigger characteristics Dimensions in mm Case A 59 (SKKL) Case A 72 SKMT * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. RECTIFIER,DIODE,THYRISTOR,MODULE 4 04-04-2007 GIL by SEMIKRON