STUDYOF CONDUCTING PROPERTY OF SWCNT FOR ELECTRONIC DEVICE APPLICATION

CONTENTS:

1)INTRODUCTION

2)REVIEW OF LITERATURE

3)OBJECTIVES

4)METHODOLOGY

5)ACTUAL WORK

6)RESULTS, DISCUSSION AND CONCLUSSION

INTRODUCTION:
Carbon has four electrons in its outer valence shell; the ground state configuration is 2s2 2p2. Diamond and graphite are considered as two natural crystalline forms of pure carbon. In diamond, carbon atoms exhibit sp3 hybridization, in which four bonds are directed toward the corners of a regular tetrahedron. The resulting three-dimensional network (diamond) is extremely rigid, which is one reason for its hardness. The bond length between sp3 carbons (e.g., diamond) is 1.56 A . In graphite, sp2 hybridization occurs, in which each atom is connected evenly to three carbons (120 ) in the xy plane, and a weak bond is present in the z axis. The CC sp2 bond length is 1.42 A . The sp2 set forms the hexagonal (honeycomb) lattice typical of a sheet of graphite. The pz orbital is responsible for a weak bond, a van der Waals bond. The spacing between the carbon layers is 3.35 A . The free electrons in the pz orbital move within this cloud and are no longer local to a single carbon atom (delocalized). This phenomenon lies behind the reason why graphite can conduct electricity. Diamond, on the contrary, behaves as an insulator because all electrons are localized in the bonds within the sp3 framework. Carbon nanotubes (CNTs), considered as a new form of pure carbon, can be vi- sualized as rolled hexagonal carbon networks that are capped by pentagonal carbon rings (see below).

There are two types of carbon tubes: single-walled (SWNTs) and multi-walled (MWNTs). CARBON nanotubes (CNs) were discovered in 1991 and have since lead to an enormous amount of research into their fundamental properties. Roughly speaking, a singlewall carbon nanotube (SWNT) is a rolled-up sheet of graphene (i.e., a monoatomic layer of graphite) having a radius of a few nanometers and lengths (so far) up to centimeters Thus, thei length to radius ratio can be on the order of 10 or more. Multiwalled carbon nanotubes (MWNTs), carbon nanotube ropes, and other related structures also exist, although attention here will be focused on SWNTs. At an atomic level, graphene has the honeycomb structure shown in Fig. 1, where the small circles denote the location of carbon atoms and the lines depict carboncarbon bonds . Lattice basis vectors are and , as shown, and the relative position vector is , where are integers. A carbon nanotube can be formed by wrapping the graphene sheet into a cylinder (of course, carbon nanotubes form naturally in, for example, the arc discharge of carbon electrodes and are not made by literally rolling graphene sheets into cylinders). Obviously, the cylinder can be formed by wrapping the sheet along any preferred axis. If the cylinder axis is the axis in Fig. 1, the resulting tube is called a zigzag CN. If the cylinder axis is the axis in Fig. 1, the resulting tube is called an armchair CN. If the cylinder axis is neither the nor the axis as shown,the resulting nanotube is called a chiral CN. Thus, carbon nanotubes can be characterized by the dual index , where for zigzag CNs, ) for armchair CNs, and ,where nm is the interatomic distance in graphene.

REVIEW OF LITERATURE:

OBFECTIVE: OUR OBJECTIVE IS TO STUDY CONDUCTING PROPERTY

OF CARBON NANO TUBE FOR ELECTRONIC DEVICE APPLICATION, SO THAT IN FUTURE WE ARE ABLE TO EXPLORE MORE APPLICATION OF CNT IN ELECTRONIC DEVICE APPLICATION.

METHOD:
Method CVD
Decomposition of hydrocarbon gases in the presence of metal catalyst particles

Arc Discharge
Electric arc discharge generated between two graphite electrodes under an innert atmosphere (argon, helium) short, 1.2 - 1.4 nm diameter short, 1-3 nm diameter up to 90% easy, defect-free nanotubes, no catalyst short, tangled nanotubes, random structures

Laser Ablation
Graphite target is vaporized by laser irradiation under flowing innert atmosphere and high temperature long, 1-2 nm diameter not applicable but possible up to 65 % high purity, defect free SWNTs expensive, low scale production

HiPCO
Gas-phase growth of singlewall carbon nanotubes with carbon monoxide as a carbon source at high temperature and pressure ~0.7 nm diameter, various lengths not applicable up to 70 % large scale, high purity defects

Basics

SWNT MWNT Yield Advantages Disadvantages

long, 0.6 - 4 nm diameter long, 10-200 nm diameter up to 100 % high purity, large scale production, simple limited control over the structures, defects

ELECTRICAL PROPERTIES:

Electrically, carbon nanotubes have

fascinating properties. For example, they can be either metallic or semiconducting, depending on their geometry (i.e., on ) . Armchair CNs are always metallic (they exhibit no energy bandgap), as are zigzag CNs with , where is an integer. Furthermore, carbon nanotubes can exhibit dc ballistic transport over at least micrometer lengths. When ballistic transport occurs, the resistance of the tube is independent of length and is, theoretically, approximately 6.45 k . This resistance value results from having two propagation bands (called the -bands) forming parallel propagation channels, where each channel has resistance equal to the resistance quantum , k . Carbon nanotubes have been made into transistors , gas

sensors , nanotweezers , and eld emission devices , among other uses. Whereas the dc and optical properties of carbon nanotubes have been studied both experimentally and theoretically, their radio-frequency properties have not been considered as thoroughly. Since carbon nanotubes can be grown having lengths on the order of a centimeter, and can be metallic, a natural topic is to consider carbon nanotubes for centimeter and millimeter-wave antenna applications, as originally proposed in In , carbon nanotube dipole antennas were considered based on a transmission-line model. In this method, two parallel conductors form a transmission line, and the transmission-line parameters inductance , capacitance , and resistance are

APPLICATION OF CNT:CARBON NANOTUBE APPLICATIONS Nowadays, various prototype electronic devices have been developed using single and multi-walled CNTs. In the following sections we briefly cite some applications that could become a reality in the near future.

Nanotube Electronic Devices

Integration of multiple nanotube devices into circuits may be feasible in the future if molecular self-assembly methods can be controlled, thus producing nanotubes with desired dimensions and properties. In this context, Sanders et al. fabricated a three-terminal switchable device based upon a single nanotube molecule . This transistor, which operates at room temperature, consists of a semiconducting single-walled nanotube connected to metal nanoelectrodes. The performance, in terms of switching speed owing to low capacitance, is excellent. An inherent problem associated with nanotubes lies in the difficulty in manipulating them. In this context, another method devised to control the length and, consequently, the electronic properties of individual nanotubes by STM nanostructuring has been reported. Dekkers group demonstrated that crossings and bends with SWNTs could be generated using an AFM. This technique allows one to cut nanotubes into shorter sections using controlled voltage applied at the STM tips and to fabricate tiny nanotube devices that could be useful for future construction of molecular machinery and/or nano-scale circuits . Molecular junctions can also be created by inserting 57 defects. It was found that metal-metal, metal-semiconductor, or semiconductor-semiconductor nanotube junctions can indeed be measured . In particular, the metal-semiconductor

junction behaves like a rectifying diode with nonlinear transport characteristics. Therefore, controlled generation of such junctions will require further research using self-assembly growth processes. There is experimental evidence indicating that SWNTs can carry current densities <109 A/cm2 . These values are much lower that those observed in metals (<105 A/cm2). Unfortunately, contact resistance occurring while connecting the tubules to the leads is of the order of k, and novel alternatives for establishing contacts between the tubes should be investigated. Bachtold and colleagues , as well as Huang and coworkers ,demonstrated for the first time the fabrication of field effect transistors that exhibit favorable high gain (>10), a large on-off ratio, and room-temperature operation (Figure 68). The Dutch group showed that one-, two-, and three-transistor circuits exhibit a range of digital logic operations: as an inverter, a logic NOR, CARBON NANOTUBES

Figure 67 (a) Three-dimensional AFM image of the SWNT deposited on two electrodes (source and drain electrodes). This system behaves as a room temperature transistor (courtesy of C. Dekker); (b) two-probe IVbias curves for various values of the gate voltage (Vgate). Data were taken at room temperature and in vacuum, with the voltage applied to contacts 1 (drain) and 2 (source). A negative Vgate leads to ohmic behavior, whereas a positive Vgate results in a strong suppression of the current at low bias voltage and nonlinear IVbias curves at higher bias (courtesy of C. Dekker).

Figure 68 (a) Schematic of single-nanotube transistor. A semiconducting SWNT is contacted by two Au electrodes. An Al wire, covered by a few-nanometers-thick oxide layer, is used as a gate; (b) height-mode atomic force microscope image of two nanotube transistors connected by a Au interconnect wire. The arrows indicate the position of

the transistors; (c) demonstration of a three-transistor logic circuit with CNTs. Output voltage as a function of time for a nanotube ring oscillator. Two resistances are at 100 megaohm, and one at 2 gigaohm (courtesy of C. Dekker).

Derycke and colleagues demonstrated that SWNTs can be used as a FET. The authors showed that SWNTs always behave as p-type transistors, whereas doped-nanotubes act as n-type devices. Both types could be integrated to fabricate voltage inverters . Javey and coworkers ( showed that it is possible to generate logic rings as well as NOR, OR, NAND, and AND logic gates using arrays of p- and n-type nanotube FETs. Because it is difficult to control the chirality of the tubes and thus the electronic properties, Collins et al. demonstrated that it is possible to peel outer layers of arc-produced MWNTs until the desired electronic property of the outer shell is obtained. In a similar fashion, the SWNTs can be treated so that the outer tubules meet the preferred electronic characteristics (. However, controlled growth in order to achieve selective chiralities needs to be investigated and exploited. Blase et al. , using arc-discharge techniques, demonstrated that B can catalyze the growth of zig-zag MWNTs. The authors carried out experimentalwork, performed ab initio calculations, and showed that B stabilizes the growth of non-chiral tubes. Therefore, these doping techniques should be developed in order to tailor the structural and electronic properties of CNTs. MWNTs can now be used as n- and p-type material so that novel p-n junctions and transistors can be created. It was shown that N-doped carbon nanotubes behave as n-type nanowires , whereas B-doped tubes act as p-type conductors. These results emphasize the importance of doping in the development of novel nanoscale electronic devices. In particular, these authors demonstrated that a temperature dependence in the thermoelectric power of doped MWNTs shows that N and B dopants can be used to change the majority carrier from ptype to n-type in analogy with bulk semiconductors such as Si. Specifically, at high temperatures the thermoelectric power of B-doped nanotubes is large and positive, indicating hole-like carriers. In constrast, the N-doped material shows a large negative thermoelectric power over the same temperature range, suggesting
electron-like conduction (Figure 69). 490 TERRONES

Figure 69 The thermoelectric power for pure carbon MWNTs, N-doped MWNTs and B-doped MWNTs. Note in particular the change in the thermoelectric power sign between B-doped and N-doped (360).

Although much progress has been achieved, further experimental research needs to be performed in the near future. IBM experts envision that in a decade CNTs could be used in high-performance electronic devices (301).

ACTUAL WORK: RESULT & DISCUSSION CONCLUSION:The structure and physico-chemical properties of carbon nanotubes have been reviewed. A wide variety of routes to CNTs (single- and multi-walled), including pyrolytic processes, laser beam, plasma arcs, electrolytic techniques and solar methods, have also been presented. Due to the great potential of CNTs, it is clear that novel technologies will emerge in the near future. However, larger quantities of nanotubes are needed if composite materials are to be fabricated. In addition, electronic and optical applications need to be investigated in detail. It is highly likely that low-cost gas sensors, three-dimensional composite materials, nanotube fabrics, novel catalytic supports, heat exchangers, biological microfilters, and virus inhibitors will be produced using CNTs. We are still witnessing novel properties of CNTs such as the ignition of SWNTs when exposed to an standard photographic flash (Figure 70) (361). Therefore, the nanotube field is vast, and we should exploit this gold mine, in which other layered materials exhibiting different properties are able to form nanotubes.

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