Cmos Lab Manual: Special Thanks To: Andy Lingley Phil Himmer

CMOS LAB MANUAL
2011
CMOS LAB MANUAL
This manual was designed for use with the Montana Microfabrication
FacilityatMSU.TheintentionofthemanualistoprovidelabusersandMSU
students with a complete description of the methods used to fabricate
CMOSdeviceson4inchsiliconsubstrates.
SpecialThanksto:
AndyLingley
PhilHimmer
Author:MatthewLeone
ToddKaiser
MontanaStateUniversity
Rev2 December2010
SUPPLIERS
UniversityofMinnesotaNanoFabricationCenter(NFC):Photomasks
www.nfc.unm.edu
VirginiaSemiconductor:SiliconSubstrates
www.virginiasemi.com
ELCATInc.:SiliconSubstrates
www.elcat.com
JTBaker:ChemicalSupplies
www.mallbaker.com/default.asp
TechnicalGlassProductsInc:Quartzware
www.technicalglass.com
KurtJLeskerCompany:EvaporationFilaments
www.lesker.com
MSUChemstore:Labware/ChemicalSupplies
www.chemistry.montana.edu/chemstores
SigmaAldrich:ChemicalSupplies
www.sigmaaldrich.com
SPISupplies:WaferTweezers
http://www.2spi.com/spihome.html
GasesPlus:PressurizedGasTanks
www.gasesplus.com(406)3889109
ThehightemperatureprocessstepsforuseinEE407labsthisyeararelistedhere.
wetoxidation
1000C
180min
Nwelldiffusion
825C
50minN2/25minO2
drivein
1000C
4hr/8hrW/&W/Ooxide
wetoxidation
1000C
90min
N+diffusion
850C
20min
wetoxidation
1000C
90min
P+diffusion
950C
20min
drivein
1000C
60min
wetoxidation
1000C
30min
dryoxidation
1000C
60min
NOTES/RECOMMENDATIONSFROMTHEAUTHOR:
Previousfabricationattemptshavebeenmetwithmixedsuccess.Inmostcasesthelargechanneled
NMOStransistors,resistorsanddiodesfunctionedproperly.However,insomecasesthethresholdvoltagewas
negative,indicatingadepletionmodedeviceandperhapsinappropriatedopantlevels,butthediffusiontimesand
temperaturesshowednoassociation.Inmanycases,thesmallerchanneldevicesfailedtofunctionandexhibited
shortcircuitbehavior.
ThePMOSdevices,includingresistors,transistorsanddiodesnearlyalwaysfailed.Numerousreasons
werethoughttoexplainforthefailurebutnonehavebeenprovenasthecause.Themostobviousreasonfor
failuremayjustbeaninappropriatedopinglevelofeithertheNwellorP+devices.Thedopantconcentrations
mayhavebeenshiftedduetosegregationeffectsduringoxidegrowthorthermalcycles.Orthefailuremaybe
causedfrompoorelectricalcontacttothediffusedregions,perhapsathinfilmofBSGoroxidewasactingasa
barrierbetweenthealuminumanddiffusedsilicon.TypicallyafterBorondeposition,theresultingBSGfilmneeds
tobeetchedlongerthannecessarytoremovethermalSiO2.Ifinsufficientlyetched,theBorondopedregionswill
appearblueishandiftestedwiththeNanospecor4prointprobewillindicateoxideispresent.Thissituationhas
beenencounteredinpreviousfabricationattempts.
FrommyexperienceandreadingsIwouldrecommendtryingthefollowingmodifiedfabricationsequence.
Iftheprocesscannotbemadesuccessfulbymodifyingetchtimesordiffusionschedules,Iwouldrecommend
shiftingtheprocessfromanNwellonPtypesubstratetoaPwellonNtypesubstrate.Otheruniversitieshave
incorporatedthistypeofCMOSfabricationwithsuccessfulresults.
MatthewLeone
MontanaStateUniversity
2007
RecommendedCMOSProcess:
Oxidation(wet):
1000C
90min
NwellPredeposition:
800C
20min
Oxidation(wet)
1050C
60min
NwellDrivein:
1050C
300min
N+S/DPredeposition:
850C
20min
Oxidation(wet):
1000C
60min
P+S/DPredeposition:
950C
20min
Oxidation(dry):
1050C
45min
LongOxideEtchin6:1BOEtoremoveBSGandSiO2fromvias.
Howtousethismanual
Themanualisbrokenupintoweeklysegmentscontainingmultiplesections:Goals,Equipment,Parameters,
MethodsandResults.Eachweekasetofprocessgoalsispresentedtotheuseralongwithalistofequipmentand
themethodsusedtoachievethosegoals.Theparameterssegmentisdevotedtoprocessdependentparameters
specifictothefabricationmethodsusedthatweek.Theparametersarecolorcodedtocorrespondtoaspecific
processmethod.Themethodssectiondescribestheprocessesusedwithinthatweektoachievethedesiredgoals.
Themethodsarenumberedtocorrespondtoaprocessgoal.Theresultsectionisleftblankforuserstorecordthe
resultsofthatweeksprocesses.
14weekOverview
Introduction&Oxidation
Week1
Photolithography&Etching(Nwell)
Week2
Cleaning&Diffusion(N)
Week3
Documenting,Cleaning&Oxidation
Week4
Photolithography&Etching(N+Source/Drain)
Week5
Cleaning&Diffusion(N+)
Week6
Week7
Photolithography&Etching(P+Source/Drain)
Week8
Cleaning&Diffusion(P+)
Week9
Week10
Photolithography&Etching(Vias)
Week11
Cleaning&AluminumEvaporation
Week12
Photolithography,Etching(Pads)&Documenting
Week13
Probing&Testing
Week14
Introduction&Oxidation
GOALS:
Week1
EQUIPMENT:
1. Familiarize students with the cleanroom

layout,equipment,safetyandprocedure.
2.Present an overview of the MEMS
fabrication process and various
processing
techniques
(i.e.
photolithography,etching,etc)
3.CharacterizethewafersubstratesandID
individualwafers
4. RCAclean(Optionalfornewwafers)
5. Oxidation(Fieldoxide)
WaferScribe
JANDEL4pointProbeStation
RCAtanks(Optional)
MODULABOxidationFurnace
PARAMETERS
Temperature(C)
1000
Time(minutes)
180
OxidationParameters
Type(wetordry)
Wet
N2/O2Flow
7/9
BubblerSetting
40
Methods:
Week1
1.CleanRoomEtiquette
Thelabemploysmanyhazardouschemicalsand
processes.Thesafetyofthelabstudentsandusersisthe
number one priority when participating in the lab.
Follow all gowning and safety procedures outlined by
thelabTA.
To maintain the integrity of the wafers and the

equipment, adhere to the process descriptions and
detailsprovidedbythelabTA.
Themostcommonreasonawaferwillnotmake
it to the end of the fabrication sequence, is poor
handling. The wafer should be handled with the wafer
tweezersandwithgreatattention.Limitthehandlingof
the wafer with gloved hands to the edges and only
during necessary circumstances. Never touch the wafer
with a bare hand and never touch the center of the
wafer,evenwithglovedhands.
When processing in the cleanroom, sources of
contaminationareanotherfactorwhichmayinhibitthe
successofthefabrication.Therefore,donottalknextto
the wafers, keep the lid to the wafer box closed and
lastly,donothastilymoveaboutthecleanroomanddo
notgetinahurrytofinishaprocess.Whenalabstudent
getsinahurryitcreatesasituationwithagreaterlikely
hood of breaking a wafer or damaging a piece of
equipment.
Methods:
2.ProcessOverview:
Week1
Figure1Overviewofthefabricationsequence.
TheCMOSdevicesarefabricatedusingcommon
bulk silicon processing techniques. The sequence is a
simple set of repeating steps including oxidation,
etching,diffusion,cleaningandpatterning.Anoverview
of the sequence is shown to the right (Figure 1). The
fabrication portion of the lab should take roughly
thirteenweekstocomplete,withthefinalweekdevoted
totesting.
Alayoutofthedieisshowninthebottomright
(Figure 2). A more complete description of the devices
found on the die is found at the end of the document
undertheDieLayoutsection.
Document everything seen and done in a clean
room lab notebook. Record all measureable quantities
and procedures and any deviations. It is important to
record every detail which may help explain device
failuresoranomalies.
3.WaferCharacterizationandID:
Semiconductorsubstrates,referredtoaswafers,
can easily be ordered through retailers and customized
forspecificapplications.Thewafersusedforthelabare
100mmindiameter,52525mthick,<100>,singleside
polished,singlecrystalsilicon,dopedwithboron(Ptype)
toaresistivityof120/cm.
AsimpletesttodetermineifthesubstrateisP
typeorNtypesiliconisknownastheHotProbeTest.
Using a DMM and a soldering iron, heat the positive
probe of the DMM for several minutes with the
soldering iron. Make sure the DMM is set to measure
mV. Place both probe tips, positive and
negative(ground) to the wafer surface. If the DMM
indicatesapositivevoltagethesubstrateisNtype,ifthe
voltage is negative the substrate is Ptype. This test
shouldbeaccurateuptoaresistivityof1000/cm.
Figure 2 Microscope picture of the die layout. A more detailed

descriptionofthelayoutisfoundattheendofthisdocument.
Methods:
Week1
3.WaferCharacterizationandID:
Continued
Figure3Scribingthesurfaceofawaferusingasteeltippedscribe.
Thebulkresistivity(cm)isdeterminedbyfirst
acquiringthesheetresistivity(/) ofthewafersusing
the JANDEL 4point Probe Station and then multiplying
thisvaluebythewaferthicknessandacorrectionfactor.
SeetheJANDELmanualfordetailsonusingthe4point
probe.
To keep track of individual wafers, a scribe can
be used to mark the back of the wafer with an
identificationmark,typicallyanumberorletter.
Proceed by lightly pressing the tip of the scribe
againstthesurfaceofthewaferandwithasfewstrokes
aspossiblescribeasectionnumberandwafernumber.
Scribingshouldbedoneasclosetotheedgeaspossible
tolimittheeffectonfabricateddevices.
5.Oxidation:GrowingSiO2
(CheckParameterssectionfordetails)
The goal of the first oxidation run is to grow
enoughsilicondioxide(SiO2)roughlya0.5mthickfilm,
tomaskthesubsequentdiffusion.
Tooxidize,insertthewafersintotheMODULAB
oxidation furnace using the quartz rod and quartz boat
(seeFigure4).Thereshouldbetwodummywafers,one
at the front of the boat and another at the rear, to
maintain uniformity across the boat. Ramp the furnace
to 600C before the removing the quartz boat and
loading the wafers. Prior to the temperature reaching
400C, turn on the nitrogen to purge the furnace. Also,
set the potentiometer on the bubbler if performing a
wet oxidation (which we are). Once the wafers are
loaded and in place at the center of the furnace, ramp
the furnace to the desired temperature. When the
desiredtemperatureisreachedstartthetimer,stopthe
nitrogenflowandturnontheoxygen.Aftertheallotted
time, ramp the furnace down to 600C, pull the boat,
remove the wafers, and set them aside to cool. When
finished, turn the furnace to 0C and turn off the
nitrogenwhenthetemperaturedropsbelow400C.
Figure 4 A student using a quartz rod to insert wafers into the

oxidationfurnace.
RESULTS:
Week1
SheetResistance(/)&Resistivity(cm):
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Photolithography&Etching(Nwell) Week2
GOALS:
1. Measure the thickness of the SiO2 with

theNanospec.
2.Photolithography(Mask#1Nwell)
3.Hardbake
4. EtchSiO2
EQUIPMENT:
Nanospec
BREWERspincoaterandhotplate
SHIPLEY1813positivephotoresist
ABMContactMaskAligner
MF319developer
TeflonCassette
6:1BOE
PARAMETERS:
Spincoat&SoftbakeParameters
Ramp
Dispense
Softbake
Temperature
Time
(RPM/s)
Type
Program
(C)
(minutes)
(automaticor
manual)
#9
5250
30
20000
Manual
#2
115
2
(static)
Exposure&DevelopmentParameters(MASK#1)
MaskOrientation
Wafer
UVIntensity
UVDose
ExposureTime
Development
(writingtoward Orientation(flat
ChannelB
(J/cm2)
(seconds)
Time(seconds)
orawayfrom
totheleftorthe
(mW/cm2)
user)
right)
Away
Left
30
~135
4.5
3060
HardbakeParameters
HardbakeProgram
Temperature(C)
Time(minutes)
#2
115
2
SiO2EtchParameters*for4,2004,500thickSiO2layer
BOEconcentration
SiO2EtchRate(/min)
Approx.EtchTime(minutes)
EtchMask
6:1
900
5*
Shipley1813Photoresist
Spin
Program
Speed
(RPM)
Time
(seconds)
Methods:
Week2
Figure5StudentsusingtheNanospectomeasuretheSiO2thickness.
1.MeasuringtheSiO2thickness:
The thickness of the freshly grown silicon
dioxide layer is measured with the Nanospec. Choose
theappropriatefilmtypeduringthepromptsandusea
blank wafer as reference. Measure the thickness at
several different points on the wafer to monitor
uniformity and determine a maximum film thickness.
AlsonotethatthethicknessoftheSiO2determinesthe
color of the wafer, therefore, color can be used to
approximate film thicknesses and identify anomalies in
film.Forreference,theNanospecpromptsformeasuring
SiO2thicknessare:
Iswavelength480nm? Y(ifnot,typeNandvalue)
Databankoption?
N
Refrindexoption?
N
Switchtoprinter?
N
Enterfilmtype:
1SiO2
Enterobjlens:
1=10x
Figure6ViewfromtheNanospeceyepiece,theedgeoftheoctagon
shouldbeinfocusforpropermeasurement.
2.PhotolithographywithMask#1(Nwell):
Spincoating&Softbaking
The goal of the photolithography step is to

transfer patterns from the mask set to the wafer
surface.Photoresist,whichisaUVsensitivechemical,is
patterned by selectively exposing certain regions with
UV light. Photoresist is also chemically resistant to the
SiO2etchant,hydrofluoricacid(alsoreferredtoasBOE);
thereforeitisusedtomask,orblock,selectportionsof
the SiO2 from being etched. The first patterns
transferred to the wafer are the Nwells, which will act
asasubstrateforthePMOSdevices.
BeginbyusingtheBREWERspincoatertospina
thin film (~1um) of SHIPLEY 1813 photoresist onto the
topside of the wafer. Next, transfer the wafer to the
adjacenthotplateandsoftbaketoremovesolventsand
harden the resist. A good coating of photoresist will be
barely visible to the naked eye and have a minimal
numberofstreaksorblotches(seeFigure7).Ifthereare
alargenumberofdefects,solventclean,dehydrate,and
tryrespinningmorephotoresist.
Figure 7 Wafers that have been spun with photoresist and exhibit
signsofapoorcoatingi.e.streaking,blotchinessandcolorgradients
Methods:
Week2
2.PhotolithographywithMask#1(Nwell):
Exposure&Development
3.Hardbaking:
Hardbaking is the final step in the

photolithography sequence, but to emphasize its
importanceitgetsitsownheading.Thegoalofthehard
bakeistoremoveanyremainingsolventsand/orwater
fromtheresist.Ithasbeenobserved,thatwithouthard
baking, the photoresist exhibits adhesion problems and
frequentlydelaminatesfromthesurfaceduringetching.
Hardbakingisverysimilartosoftbakingandfollowsthe
sameprocedure.Loadawaferontoahotplateforaset
timeattheappropriatetemperature.
Proceed by patterning the photoresist with

Mask #1. Start by loading the mask onto the ABM
contactaligner mask stage. Turn the maskvac on and
raisethemaskstage.Carefully,loadthewaferontothe
substratechuckandorientitsuchthatthe<110>plane
(wafer flat) is to the left and running straight up and
down. Turn on the substratevac to lock the wafer in
place and lower the chuck to avoid hitting the contact
mask. Next, lower the mask stage and raise the
substrate chuck up to meet the mask, fringe lines will
become visible as the wafer and mask come into
contact. Align the mask to the wafer using the markers
on the sides of the wafer (no alignment for the first
photolithography step). Turn on the contactvac to
removeanyairgapbetweenmaskandwafer.Adjustthe
exposuretimeandchannelsettingthenexpose.Remove
the wafer by turning off the contactvac, lowering the
substratechuck,raisingthemaskframe,andturningoff
thesubstratevac.TransferthewafertoadishofMF319
developer(afaintoutlineofthefeaturescanbeseenat
this point), submerge the wafer in MF319 and gently
swirl for 3060 seconds until the exposed resist is
completely dissolved. If done correctly there should be
nophotoresistleftinthenwellregions.Ifthereis(see
Figure8),resubmergethewaferintheMF319developer
for additional time. If unsuccessful, use a solvent clean
to strip the photoresist, dehydrate and respin again.
When finished, pour the used MF319 into the MF319
wastecontainerlocatedunderthesolventbenchnextto
thephotoresist.
Figure 8 A microscope picture of a patterned feature after

development in MF319. The color gradient indicates that the
photoresist was not completely removed during the development.
The wafer should be developed for longer or redone with a longer
exposure.
Figure 9 Several features indicating photoresist adhesion problems

afteretchingSiO2.ThecolorgradientshowsataperedSiO2etchafter
thephotoresistdelaminated.
Methods:
Week2
Figure11AprofilometermeasurementinreferencetoFigure10.The
dataindicatesthatasmallamount(250nm)ofSiO2remainsinetched
windows.ThisSiO2willinhibitthefollowingdiffusion.
4.EtchingtheSiO2:
ThegoaloftheSiO2etchistoremovethesilicon
dioxide from the exposed regions in the photoresist.
SilicondioxideisetchedwithBOE(BufferedOxideEtch)
which is a combination of hydrofluoric acid and
buffering chemicals to stabilize the reaction. BOE is
highlyselectivetosilicondioxidesothephotoresistwill
notbeetched.
ThisstepshouldbecarriedoutbythelabTAfor
safetyreasons.BeginbyloadingthewafersintoaTeflon
cassette with equal spacing between wafers. Using the
handle, submerge the cassette in 6:1 BOE for the
appropriateamountoftimeoruntiltheexposedSiO2is
completely removed. To determine if the SiO2 is
completely removed, check the regions for color (see
Figure 10) and hydrophobicity. When the etch is
complete,removethecassetteandrinsethewafersina
bucket of DI water. Pull the cassette from the rinse
bucketandrinseanddryindividualwaferswithDIwater
andnitrogengun.
Figure 10 An example of micromasking with features that were

etchedbuthadundevelopedphotoresistmaskingtheetch.Theblue
colorindicatesthatSiO2stillremainsoverthosefeatures.Thewhite
color is bare silicon. Micromasking can usually be solved with a
descumetch(dryO2plasmaetch)beforeetchinginBOE.
SiO2Thickness():
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RESULTS:
Week2
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Cleaning&Diffusion(N)
GOALS:
Week3
EQUIPMENT:
1. FullWaferClean(Solvent&RCA)
2. PhosphorusDiffusion
Acetone,Methanol,Isopropyl
MODULABPhosphorousDiffusion
Furnace
PHOSPLUSTP250PhosphorousSources
RCACleanTanks
PARAMETERS:
PiranhaSolution
PiranhaEtch
Time(minutes)
3:1
H2O2:H2SO4
10
BoronSource
PHOSPLUSTP250
BoronSource
None
RCACleanParameters
BOEsolution
BOEEtchTime
(seconds)
6:1
10
IonicClean
6:1:1
H2O:H2O2:HCl
PhosphorousDiffusionParameters(Nwell)
Temperature(C)
Time(minutes)
900
20
DriveinParameters(Nwell)
Temperature(C)
Time(minutes)
1000
600
IonicCleanEtch
Time
(minutes)
10
N2Flow
7
N2Flow
7
Methods:
Week3
1.WaferCleaning:
6.PhosphorousDiffusion:
The wafers need to be cleaned to remove

photoresist, and any possible sources of contamination
beforebeingplacedinahightemperaturefurnace.
To remove the photoresist a solvent clean is
performed.Beginbyplacinganevaporatingdishonthe
solvent bench to catch solvent waste. Rinse the wafer
with acetone using the squirt bottle, and follow with
methanol and isopropyl. The acetone will remove the
photoresist and the methanol and isopropyl with
remove any acetone residue. Rinse the wafers in DI
wateranddrywithanitrogengun.Whenfinishedpour
thesolventwasteintotheSolventWasteContainer.
To remove possible sources of contamination a
modifiedRCAcleanisperformed.TheRCAcleanconsists
of rinsing the wafers in three chemical solutions. The
firstisamixtureofsulfuricacidandhydrogenperoxide
known as Piranha etch. The piranha etch will remove
any organic material. The second mixture is a simple
BOE solution which will strip any native oxide that has
accumulated on the wafer surface. The third and final
solutionisdesignedtoremoveanyheavymetalions,itis
a mixture of hydrochloric acid, water and hydrogen
peroxide.Thissolutionisreferredtoasionicclean
This step should also be carried out by the lab
TA. Load the wafers into a Teflon cassette transfer the
cassettebetweentheRCAsolutionsuntilthecleaningis
complete. Rinse the wafers and cassette in a bucket of
DIwaterthenpulleachwaferandrinseanddrybyhand.
The goal of the phosphorous diffusion is to flip

the polarity of the Ptype substrate in the Nwells. In
other words, the diffusion will create Ntype silicon
areasonthewafer.TheseNwellsorTUBSwillactasthe
substrateforthePMOSdevices.
The diffusion is modeled as a solidsolubility
limited diffusion followed by several drivein steps. The
expectedresistivitycanbederivedfromthismodeland
verifiedwiththePHOSPLUSdatasheet.
TodiffuseNtype(Phosphorous)material,ramp
the MODULAB Phosphorous Diffusion Furnace to 600C
andsetthenitrogenflow.Removethequartzboatwith
the solid, white, PHOSPLUS TP250 sources already in
place. Load the silicon wafers next to the sources with
thepatternedsidefacingasource(seeFigureB).Insert
the quartz boat to the center of the furnace and ramp
the furnace to the desired temperature. When the
desiredtemperatureisreachedstartthetimer.Afterthe
allottedtime,rampthefurnacedownto600C,pullthe
quartzboat andremove thewafersandsetthem aside
tocool.Whenfinished,turnthefurnaceto0Candturn
off the nitrogen when the temperature drops below
400C.
FigureBAnillustrationofhowthewafersareloadedintothequartz
boatnexttothediffusionsources.
Figure 12 Wafers submerged in Piranha Etch to remove organic

contaminates.
RESULTS:
Week3
RESULTS:
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Documenting,Cleaning&Oxidation Week4
GOALS:
EQUIPMENT:
1. Take pictures using the microscope and

digitalcamera.
2.StriptheSiO2&PSG
3.Obtain 4point probe measurements of
thediffusion
4. RCAclean
5. Oxidation
OpticalMicroscope
6:1BOE
Tefloncassette
RCACleantanks
CANONDigitalCamera
PARAMETERS:
BOEconcentration
6:1
PiranhaSolution
3:1
H2O2:H2SO4
Temperature(C)
1000
SiO2EtchRate(/min)
900
5*
RCACleanParameters
PiranhaEtch
BOEsolution
BOEEtchTime
IonicClean
Time(minutes)
(seconds)
10
6:1
10
Time(minutes)
90
OxidationParameters
Type(wetordry)
Wet
6:1:1
H2O:H2O2:HCl
N2/O2Flow
7/9
EtchMask
none
IonicCleanEtch
Time
(minutes)
10
BubblerSetting
40
Methods:
Week4
1.TakingPictures:
With the first diffusion completed, the wafers
nowhaveobservablefeatures.Fromthispoint,onegoal
of the lab is to document the fabrication progress by
taking pictures of the surface of the wafer as it moves
through the sequence. Begin by using the optical
microscopeandCANONdigitalcameratotakeapicture
ofthediffusedNwell(showninFigure13)
Figure 14 A lab TA handling acids at the rinse sink with full acid
protectionclothing.Notethefacemask,apron,andchemicalgloves.
Figure13AdiffusedNwell.Theaddeddopantscreatethedifferent
color.
3.DiffusionMeasurements:
4.StrippingtheSiO2andPSG:
Preparethewafersurfaceforthenextoxidation
bycompletelyremovingalltheSiO2andPSG.
REPEAT: This step should be carried out by the
lab TA for safety reasons. Begin by loading the wafers
into a Teflon cassette with equal spacing between
wafers. Using the handle, submerge the cassette in 6:1
BOE for the appropriate amount of time or until the
exposedSiO2iscompletelyremoved.Todetermineifthe
SiO2iscompletelyremoved,checktheregionsforcolor
(see Figure 9) and hydrophobicity. When the etch is
andnitrogengun.
There is a large diffused rectangle/square test

region. This region is used to measure the sheet
resistivity associated with the phosphorus Nwell
diffusion (see Figure 16 next page). Use the JANDEL 4
point probe to measure the sheet resistivity of the
diffusion.Startbyraisingtheprobearm,uncappingthe
tipandplacingthewaferonthestage.Aligntheprobes
over the test region and lower the arm into contact.
Start the test by using a small current, roughly 100nA,
and increment the current until the sheet resistivity
stabilizes.ConsulttheJANDEL4pointprobemanualfor
furtherassistance.Themeasuredsheetresistivityshould
correspond to the value found on this PHOSPLUS data
sheet for the appropriate time and temperature (see
Figure17nextpage).
Figure15AstudentusingtheJANDEL4pointprobetodocumentthe
sheetresistivityofthediffusion.
Methods:
Week4
Figure16Anoutlineofthewaferdiffusiontestregions.Theareain
pinkisdiffusedasNandshouldbetestedwiththe4pointprobe.
4.RCACleaning:
REPEAT: To remove possible sources of
contamination a modified RCA clean is performed. The
RCA clean consists of rinsing the wafers in three
chemicalsolutions:Piranhaetch,BOE,Ionicclean.
safety. Load the wafers into a Teflon cassette transfer
the cassette between the RCA solutions until the
cleaningiscomplete.Rinsethewafersandcassetteina
bucket of DI water then pull each wafer and rinse and
drybyhand.
Figure 17 A graph from the PhosPlus datasheet illustrating the

relationship between diffusion time, temperature and sheet
resistivity. The graph should be used to verify sheetresistivity
measurements.
Thegoalofthesecondoxidationrunisthesame
asthefirst:growenoughsilicondioxide(SiO2)roughlya
0.5mthickfilm,tomaskthesubsequentdiffusion.
REPEAT: To oxidize, insert the wafers into the
MODULAB oxidation furnace using the quartz rod and
quartzboat(seeFigure4).Thereshouldbetwodummy
wafers,oneatthefrontoftheboatandanotheratthe
rear, to maintain uniformity across the boat. Ramp the
furnace to 600C before the removing the quartz boat
and loading the wafers. Prior to the temperature
reaching 400C, turn on the nitrogen to purge the
furnace. Also, set the potentiometer on the bubbler if
performing a wet oxidation (which we are). Once the
wafers are loaded and in place at the center of the
furnace, ramp the furnace to the desired temperature.
When the desired temperature is reached start the
timer, stop the nitrogen flow and turn on the oxygen.
Aftertheallottedtime,rampthefurnacedownto600C
(or 0C if finished with furnace), pull the boat, remove
the wafers, and set them aside to cool. When the
temperature drops below 400C the nitrogen can be
turnedoff.
RESULTS:
Week4
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NOTES/CHANGES:
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Photolitho&Etching(N+Source/Drain)Week5
GOALS:
EQUIPMENT:
1. Measure the thickness of the SiO2 layer

withtheNanospec.
2.Photolithography
(Mask#2N+Source/Drain)
3.Hardbake
4. EtchSiO2
Nanospec
MF319developer
TeflonCassette
6:1BOE
PARAMETERS:
Ramp
Dispense
Softbake
Temperature
Time
(RPM/s)
Type
Program
(C)
(minutes)
(automaticor
manual)
#9
5250
30
20000
Manual
#2
115
2
(static)
MaskOrientation
Wafer
UVIntensity
UVDose
ExposureTime
Development
ChannelB
(J/cm2)
(seconds)
Time(seconds)
orawayfrom
totheleftorthe
(mW/cm2)
user)
right)
Away
Left
30
~135
4.5
3060
HardbakeParameters
HardbakeProgram
Temperature(C)
Time(minutes)
#2
115
2
BOEconcentration
SiO2EtchRate(/min)
EtchMask
6:1
900
5*
Spin
Program
Speed
(RPM)
Time
(seconds)
Methods:
Week5
Measure the thickness of the silicon dioxide at
several different points on the wafer using the
Nanospec. For reference, the Nanospec prompts for
measuringSiO2thicknessare:
Databankoption?
N
Refrindexoption?
N
Switchtoprinter?
N
Enterfilmtype:
1SiO2
Enterobjlens:
1=10x
2.PhotolithographywithMask#2(N+S/D):
The second mask contains the features for the

NMOSsourcesanddrains.
REPEAT:BeginbyusingtheBREWERspincoater
tospinathinfilmofSHIPLEY1813photoresistontothe
Figure18Studentsandprofessorlookingonasawaferisalignedand
exposedattheABMcontactaligner.
2.PhotolithographywithMask#2(N+S/D):
Mask#2.
REPEAT: Load the mask onto the ABM contact
alignermaskstage.Turn themaskvaconandraisethe
maskstage.Carefully,loadthewaferontothesubstrate
chuckandorientitsuchthatthe<110>plane(waferflat)
istotheleftandrunningstraightupanddown.Turnon
the substratevac to lock the wafer in place and lower
thechucktoavoidhittingthecontactmask.Next,lower
themaskstageandraisethesubstratechuckuptomeet
the mask, fringe lines will become visible as the wafer
andmaskcomeintocontact.Alignthemasktothewafer
usingthemarkersonthesidesofthewafer.Turnonthe
contactvac to remove any air gap between mask and
wafer. Adjust the exposure time and channel setting
then expose. Remove the wafer by turning off the
contactvac, lowering the substrate chuck, raising the
maskframe, andturning offthesubstratevac.Transfer
the wafer to a dish of MF319 developer (a faint outline
ofthefeaturescanbeseenatthispoint),submergethe
waferinMF319andgentlyswirlfor3060secondsuntil
the exposed resist is completely dissolved. If done
correctly there should be no photoresist left in the
diffusion contact regions (see Figure 8). If there is,
resubmerge the wafer in the MF319 developer for
additional time. If unsuccessful, use a solvent clean to
strip the photoresist, dehydrate and respin again.
thephotoresist.
Methods:
Week5
3.Hardbaking:
REPEAT: It has been observed, that without

hardbaking,thephotoresistexhibitsadhesionproblems
and frequently delaminates from the surface during
etching. Hardbaking is very similar to softbaking and
follows the same procedure. Load a wafer onto a
hotplateforasettimeattheappropriatetemperature.
4.EtchingtheSiO2:
andnitrogengun.
RESULTS:
Week5
SiO2Thickness():
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NOTES/CHANGES:
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Cleaning&Diffusion(N+)
GOALS:
Week6
EQUIPMENT:
2. PhosphorousDiffusion
RCATanks
PhosphorousDiffusionFurnace
PHOSPLUSTP250PhosphorousSources
TeflonCassette
PARAMETERS:
PiranhaSolution
PiranhaEtch
Time(minutes)
3:1
H2O2:H2SO4
10
BoronSource
PHOSPLUSTP250
RCACleanParameters
BOEsolution
BOEEtchTime
(seconds)
6:1
10
IonicClean
6:1:1
H2O:H2O2:HCl
BoronDiffusionParameters(N+)
Temperature(C)
Time(minutes)
900
60
IonicCleanEtch
Time
(minutes)
10
N2Flow
7
Methods:
1.WaferCleaning:
REPEAT: To remove the photoresist a solvent
cleanisperformed.Beginbyplacinganevaporatingdish
on the solvent bench to catch solvent waste. Rinse the
wafer with acetone using the squirt bottle, and follow
with methanol and isopropyl. The acetone will remove
the photoresist and the methanol and isopropyl with
contamination a modified RCA clean is performed. This
stepshouldbecarriedoutbythelabTA.Loadthewafers
intoaTefloncassettetransferthecassettebetweenthe
RCA solutions until the cleaning is complete. Rinse the
wafers and cassette in a bucket of DI water then pull
eachwaferandrinseanddrybyhand,
6.PhosphorousDiffusion:
The goal of the phosphorous diffusion is to

createhighlydopedNtypesilicontoactasthesources
anddrainsoftheNMOStransistors.
REPEAT: To diffuse Ntype (Phosphorous)

material, ramp the MODULAB Phosphorous Diffusion
Furnaceto600Candsetthenitrogenflow.Removethe
quartz boat with the solid, white, PHOSPLUS TP250
sourcesalreadyinplace.Loadthesiliconwafersnextto
the sources with the patterned side facing a source.
Insert the quartz boat to the center of the furnace and
rampthefurnacetothedesiredtemperature.Whenthe
desiredtemperatureisreachedstartthetimer.Afterthe
allottedtime,rampthefurnacedownto600C(or0Cif
finishedwithfurnace),pullthequartzboatandremove
the wafers and set them aside to cool. When the
turnedoff.
Week6
RESULTS:
Week6
RESULTS:
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NOTES/CHANGES:
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GOALS:
EQUIPMENT:
1. Take pictures using the microscope and

digitalcamera
2.StriptheSiO2andPSG
3. Obtain 4point probe measurements of

thediffusion
4. RCAclean
5. Oxidation
OpticalMicroscope
CANONDigitalCamera
6:1BOE
TeflonCassette
RCATanks
PARAMETERS:
BOEconcentration
6:1
PiranhaSolution
3:1
H2O2:H2SO4
Temperature(C)
1000
SiO2EtchRate(/min)
900
5*
RCACleanParameters
PiranhaEtch
BOEsolution
BOEEtchTime
IonicClean
Time(minutes)
(seconds)
10
6:1
10
Time(minutes)
90
OxidationParameters
Type(wetordry)
Wet
6:1:1
H2O:H2O2:HCl
N2/O2Flow
7/9
EtchMask
none
IonicCleanEtch
Time
(minutes)
10
BubblerSetting
40
Methods:
Week7
1.TakingPictures:
Use the Optical Microscope and CANON Digital

Camera to take pictures of the diffused NMOS sources
anddrains.
Use the JANDEL 4point probe to measure the

sheetresistivityoftheN+andNwelldiffusions(Referto
Figure21forthelocationofthediffusedareas).Consult
theJANDEL4pointprobemanualforfurtherassistance.
The measured sheet resistivity of the N+ region should
correspond to the value found on the PhosPlus data
sheet(seeFigure20).
Figure19DiffusedNMOSsourcesanddrains.
Figure 20 A graph from the PhosPlus datasheet illustrating the

relationship between diffusion time, temperature and sheet
resistivity.
andnitrogengun.
pinkisthefreshlydiffusedN+regionandshouldbetestedwiththe4
pointprobe.
Methods:
Week7
4.RCACleaning:

the cassette between the RCA solutions until the
drybyhand.
Thegoaloftheoxidationrunistogrowenough
silicondioxide(SiO2)roughlya0.5mthickfilm,tomask
thesubsequentdiffusion.
REPEAT: To oxidize, insert the wafers into the
MODULAB oxidation furnace using the quartz rod and
quartzboat(seeFigure4).Thereshouldbetwodummy
wafers,oneatthefrontoftheboatandanotheratthe
rear, to maintain uniformity across the boat. Ramp the
furnace to 600C before the removing the quartz boat
and loading the wafers. Prior to the temperature
reaching 400C, turn on the nitrogen to purge the
furnace. Also, set the potentiometer on the bubbler if
performing a wet oxidation (which we are). Once the
wafers are loaded and in place at the center of the
furnace, ramp the furnace to the desired temperature.
When the desired temperature is reached start the
timer, stop the nitrogen flow and turn on the oxygen.
Aftertheallottedtime,rampthefurnacedownto600C
(or 0C if finished with furnace), pull the boat, remove
the wafers, and set them aside to cool. When the
turnedoff.
RESULTS:
Week7
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NOTES/CHANGES:
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Photolitho&Etching(P+Source/Drain)Week8
GOALS:
EQUIPMENT:

withtheNanospec
2. Photolithography
(Mask#3P+Source/Drain)
3. Hardbake
4. SiO2Etch
Nanospec
MF319developer
6:1BOE
TeflonCassette
PARAMETERS:
Ramp
Dispense
Softbake
Temperature
Time
(RPM/s)
Type
Program
(C)
(minutes)
(automaticor
manual)
#9
5250
30
20000
Manual
#2
115
2
(static)
MaskOrientation
Wafer
UVIntensity
UVDose
ExposureTime
Development
ChannelB
(J/cm2)
(seconds)
Time(seconds)
orawayfrom
totheleftorthe
(mW/cm2)
user)
right)
Away
Left
30
~135
4.5
3060
HardbakeParameters
HardbakeProgram
Temperature(C)
Time(minutes)
#2
115
2
BOEconcentration
SiO2EtchRate(/min)
EtchMask
6:1
900
5*
Spin
Program
Speed
(RPM)
Time
(seconds)
Methods:
Week8
Databankoption?
N
Refrindexoption?
N
Switchtoprinter?
N
Enterfilmtype:
1SiO2
Enterobjlens:
1=10x
2.PhotolithographywithMask#3(P+S/D):
The third mask contains the features for the

PMOSsourcesanddrains.
Figure22AstudentusingtheABMmaskalignertoalignMask#3.
2.PhotolithographywithMask#3(P+S/D):
Mask#3.
thephotoresist.
Methods:
3.Hardbaking:

4.EtchingtheSiO2:
andnitrogengun.
Week8
RESULTS:
Week8
SiO2Thickness():
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NOTES/CHANGES:
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Cleaning&Diffusion(P+)
GOALS:
Week9
EQUIPMENT:
2.BoronDiffusion
RCATanks
BoronDiffusionFurnace
BORONPLUSGS139BoronSources
PARAMETERS:
PiranhaSolution
PiranhaEtch
Time(minutes)
3:1
H2O2:H2SO4
10
BoronSource
BORONPLUSGS139
BoronSource
none
RCACleanParameters
BOEsolution
BOEEtchTime
(seconds)
6:1
10
IonicClean
6:1:1
H2O:H2O2:HCl
BoronDiffusionParameters(DIFFUSEDCONTACTS)
Temperature(C)
Time(minutes)
1000
120
DriveinParameters(DIFFUSEDCONTACTS)
Temperature(C)
Time(minutes)
1000
60
IonicCleanEtch
Time
(minutes)
10
N2Flow
7
N2Flow
7
Methods:
1.WaferCleaning:
with methanol and isopropyl. The acetone will remove
the photoresist and the methanol and isopropyl with
contamination a modified RCA clean is performed. This
stepshouldbecarriedoutbythelabTA.Loadthewafers
intoaTefloncassettetransferthecassettebetweenthe
RCA solutions until the cleaning is complete. Rinse the
wafers and cassette in a bucket of DI water then pull
eachwaferandrinseanddrybyhand,
6.BoronDiffusion:
The goal of the boron diffusion is to create

highly doped Ptype silicon to act as the sources and
drainsofthePMOStransistors.
REPEAT: To diffuse Ptype (Boron) material,

ramptheLindbergBlueBoronDiffusionFurnaceto600C
andsetthenitrogenflow.Removethequartzboatwith
the solid, white, BORONPLUS GS139 sources already in
place. Load the silicon wafers next to the sources with
thepatternedsidefacingasource.Insertthequartzboat
tothecenterofthefurnaceandrampthefurnacetothe
desired temperature. When the desired temperature is
reached start the timer. After the allotted time, ramp
the furnace down to 600C (or 0C if finished with
furnace), pull the quartz boat and remove the wafers
and set them aside to cool. When the temperature
dropsbelow400Cthenitrogencanbeturnedoff.
Week9
RESULTS:
Week9
RESULTS:
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___________________________________________________________________________
___________________________________________________________________________
NOTES/CHANGES:
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___________________________________________________________________________
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___________________________________________________________________________
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___________________________________________________________________________
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___________________________________________________________________________
GOALS:
EQUIPMENT:
1. Take pictures with microscope and

camera
2.StripSiO2andBSG
3. 4pointprobe
3.RCAclean
4. DryOxidation
OpticalMicroscope
CANONDigitalCamera
JANDEL4pointprobe
RCAtanks
PARAMETERS:
BOEconcentration
SiO2EtchRate(/min)
EtchMask
6:1
900
5*
RCACleanParameters
PiranhaSolution
PiranhaEtch
BOEsolution
BOEEtchTime
IonicClean
IonicCleanEtch
Time(minutes)
(seconds)
Time
(minutes)
3:1
10
6:1
10
6:1:1
10
H2O2:H2SO4
H2O:H2O2:HCl
OxidationParameters
Temperature(C)
Time(minutes)
Type(wetordry)
N2/O2Flow
BubblerSetting
1000
30
Wet
7/9
N/A
OxidationParameters
Temperature(C)
Time(minutes)
Type(wetordry)
N2/O2Flow
BubblerSetting
1000
60
Dry
7/9
N/A
Methods:
Week10
1.TakingPictures:

Camera to take pictures of the diffused PMOS sources
anddrains.
Use the 4point probe to measure the sheet

resistivity of the P+, N+ and Nwell diffusions (Refer to
Figure25forthelocationofthediffusedareas).Consult
theJANDEL4pointprobemanualforfurtherassistance.
The measured sheet resistivity of the P+ region should
correspond to the value found on the BoronPlus data
sheet(seeFigure24).
Figure23DiffusedPMOSandNMOSsourcesanddrains.
Figure24GraphfromtheBoronPlusdatasheet.
andnitrogengun.
Methods:
Week10
1.TakingPictures:
pink is diffused as P+. Test each area with the 4point probe and
recordthefinalsheetresistivities.
5.DryOxidation:GrowingSiO2

anddrains.
The goal of the fourth oxidation run is to grow

the gate oxide. The oxide thickness should be
approximately 700 thick. The method of oxidation
differs from the previous runs, the oxide will be grown
withdryO2.
REPEAT: To oxidize, insert the wafers into
oxidationfurnaceusingthequartzrodandquartzboat.
Thereshouldbetwodummywafers,oneatthefrontof
theboatandanotherattherear,tomaintainuniformity
across the boat. Ramp the furnace to 600C before the
removing the quartz boat and loading the wafers. Prior
tothetemperaturereaching400C,turnonthenitrogen
to purge the furnace. Load the wafers and insert the
quartz boat to the center of the furnace and ramp the
furnace to the desired temperature. When the desired
temperature is reached start the timer, stop the
nitrogenflowandturnontheoxygen.Aftertheallotted
time,rampthefurnacedownto600C(or0Ciffinished
withfurnace),pulltheboat,removethewafers,andset
themasidetocool.
Figure16CompletedType2piezoresistors.
4.RCACleaning:
bycompletelyremovingalltheSiO andPSG.
the cassette between the RCA2 solutions until the
drybyhand.

andnitrogengun.
RESULTS:
Week10
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NOTES/CHANGES:Ashortwetoxidationwasaddedalongwithanothermaskingstep.
Thegateoxidemask(GOX)removesthefieldoxidewherethegateoxideistobegrown
andgeneratesthealignmentmarksforthecontactmask.Inthepastthisstepwas
removedtoexpeditetheprocesssothatitcouldbefinishedbytheendoftheterm.We
nowstartonWeek#2withthesubstratesalreadyoxidizedtoallowfortheextra
processingstepsnow.
___________________________________________________________________________
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Photolithography&Etching(Vias)
GOALS:
EQUIPMENT:

withtheNanospec
2. Photolithography(Mask#4Vias)
3. Hardbake
4. SiO2Etch
Week11
Nanospec
MF319developer
6:1BOE
TeflonCassette
PARAMETERS:
Ramp
Dispense
Softbake
Temperature
Time
(RPM/s)
Type
Program
(C)
(minutes)
(automaticor
manual)
#9
5250
30
20000
Manual
#2
115
2
(static)
MaskOrientation
Wafer
UVIntensity
UVDose
ExposureTime
Development
ChannelB
(J/cm2)
(seconds)
Time(seconds)
orawayfrom
totheleftorthe
(mW/cm2)
user)
right)
Away
Left
30
~135
4.5
3060
HardbakeParameters
HardbakeProgram
Temperature(C)
Time(minutes)
#2
115
2
BOEconcentration
SiO2EtchRate(/min)
EtchMask
6:1
900
5*
Spin
Program
Speed
(RPM)
Time
(seconds)
Methods:
Databankoption?
N
Refrindexoption?
N
Switchtoprinter?
N
Enterfilmtype:
1SiO2
Enterobjlens:
1=10x
2.PhotolithographywithMask#4(Vias):
Thefourthmaskcontainsthefeaturesofthevia
etch. The vias are holes in the SiO2 which allow the
aluminumpadstocontactthediffusedsiliconsurface.
Week11
2.PhotolithographywithMask#4(Vias):
Mask#4.
thephotoresist.
Methods:
3.Hardbaking:

4.EtchingtheSiO2:
andnitrogengun.
Week11
RESULTS:
Week11
SiO2Thickness():
___________________________________________________________________________
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___________________________________________________________________________
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___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
NOTES/CHANGES:
___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
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___________________________________________________________________________
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___________________________________________________________________________
Cleaning&AluminumEvaporation
GOALS:
EQUIPMENT:

camera
2.SolventClean
3. AluminumPVD
PARAMETERS:
Week12
MODULABPhysicalVaporDeposition
system
Methods:
Week12

with methanol and isopropyl. Rinse the wafers in DI
3.AluminumPVD:
Figure27CompletedType2piezoresistors.
1.TakingPictures:
anddrains.
Figure26EtchedviasaboveaNMOSsourceanddrain.
2.SolventClean:
The goal of the aluminum evaporation is to

create a thin film of aluminum on the topside of the
wafer.ThealuminumwillbepatternedwithMask#5to
create electrical contact pads for characterizing the
finished devices. The evaporation is accomplished with
the MODULAB PVD system. See the MODULAB PVD
operationsmanualformoreinformation.
Approximately4050cm2ofaluminumshouldbe
evaporated. This will provide roughly 0.50.7m of
aluminumonthewafersurface.
RESULTS:
Week12
Results:
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___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
NOTES/CHANGES:
___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
___________________________________________________________________________
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___________________________________________________________________________
___________________________________________________________________________
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___________________________________________________________________________
___________________________________________________________________________
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___________________________________________________________________________
Photolitho,Etch(Pads)&Document Week13
GOALS:
EQUIPMENT:
1. Photolithography(Mask#5ContactPads)
2. AluminumEtch
3.SolventClean
4. Anneal
5. Measure aluminum thickness with
profilometer
camera
MF319developer
PAEEtchant
AMBIOSProfilometer
OpticalMicroscope
CANONDigitalCamera
PARAMETERS:
Ramp
Dispense
Softbake
Temperature
Time
(RPM/s)
Type
Program
(C)
(minutes)
(automaticor
manual)
#9
5250
30
20000
Manual
#2
115
2
(static)
MaskOrientation
Wafer
UVIntensity
UVDose
ExposureTime
Development
ChannelB
(J/cm2)
(seconds)
Time(seconds)
orawayfrom
totheleftorthe
(mW/cm2)
user)
right)
Away
Left
30
~135
4.5
3060
HardbakeParameters
HardbakeProgram
Temperature(C)
Time(minutes)
#2
115
2
AluminumEtchParameters*for0.51umthickaluminumlayer
Etchant
Approx.EtchRate(/min)
EtchMask
PAE
350
15*
AnnealParameters
Furnace
Temperature(C)
N2Flow
Time(min)
BoronDiffusionFurnace
450
7
45
Spin
Program
Speed
(RPM)
Time
(seconds)
Methods:
1.PhotolithographywithMask#5
(ContactPads):
1.PhotolithographywithMask#5
(ContactPads):

Mask#5.
thephotoresist.
The fifth mask contains the features for the

aluminumcontactpads.
Week13
Methods:
Week13
2.EtchingAluminum:
4.Annealing:
Thegoaloftheannealistoimprovethejunction
The exposed aluminum is removed in PAE

(Phosphoric Acid Etch) one wafer at a time. The PAE
contains three acids: phosphoric, acetic, and nitric. It
etches aluminum at approximately 350/min and is
highlyselectivetoaluminumcomparedtophotoresist.
Begin by pouring a small amount of PAE into a
pyrexorTeflonevaporatingdish.Submergeawaferand
gently swirl until the exposed aluminum has been
etched.Avisibleetchfrontwillmoveacrossthewaferas
the aluminum is removed (see Figure 24). The etch will
takebetween1015minutestocomplete.
Figure28AluminumbeingetchedinPAE.Notetheetchfrontmoving
from left to right. This is a result of a varying thickness in the
aluminumcreatedduringtheevaporation.
between the silicon and aluminum. Before the anneal,

the junction is highly resistive and inhibits the
effectiveness of the devices. Afterward, the junction is
moreconductiveandcreatesamorestablesensor.
To anneal, place wafers into the quartz boat

(away from the diffusion sources) and insert into the
heatedfurnace.Leaveforthedesiredtime,thenremove
andallowwaferstocool.
5.AluminumThicknessMeasurements:
Measure the thickness of the patterned

aluminum film with the AMBIOS Stylus Profilometer.
Begin by loading a wafer onto the stage. Using the XP2
softwaremovethestage andwaferbeneaththestylus.
Adjust the stylus height and stage position over a
patternedfeature.Scanthefeaturewithanappropriate
scan length, speed, and force. Consult the AMBIOS
operations manual for more details. The results should
resemblethefollowingfigure,Figure29.
Figure 29 Profilometer data of an aluminum pad. The data reveals

thethicknessofthealuminumfilm.
3.SolventClean:
with methanol and isopropyl. Rinse the wafers in DI
Methods:
Week13
6.TakingPictures:
CameratotakepicturesofthefinishedPMOSandNMOS
devices.Takepicturesoftheteststructuresaswell.
Figure 30 Completed NMOS transistors with patterned aluminum
contactpads.
RESULTS:
Week13
AluminumThickness(m):
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NOTES/CHANGES:
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Probe&Test!
GOALS:
Week14
EQUIPMENT:
1. Characterizeandtestasmanydevicesas
possible
PARAMETERS:
Figure31Overviewoftheprobestation.
WaferScribe
CASCADEprobestation
DMM
Oscilloscope
AGILENTSemiconductorDeviceAnalyzer
Methods:
Week14
1.Testing:
Devices are tested and characterized with the
CASCADE probe station and AGILENT Semiconductor
Device Analyzer (see Figure 31). The first devices to be
tested should be the resistors. (Refer to the Die Layout
Sectionattheendofthedocumentfordetailsonwhere
thedevicesarelocated)SetuptheResistorTestprogram
on the device analyzer (see Figure 37). Place the wafer
on the wafer stage and adjust the probe and stage
positionsothattheprobetipsarealignedoverthetwo
aluminumpadsofaresistor(seeFigure36).Ensurethe
probescorrespondtothecorrectportsnumbersonthe
deviceanalyzerandpresstherunbutton.Theresults
should resemble the following graph (Figure 38). If the
resultsarepoororindicatethedeviceisnotfunctioning
properly, retest other devices on different dies around
thewafer.
After all varieties of resistors are tested,
continuebycharacterizingthediodes,NMOSandPMOS
devices. The appropriate testing interfaces need to be
recalledfromthedeviceanalyzer,andinthecaseofthe
transistors all four probes need to be used for the
source, drain, gate, and substrate (optional). The
following figures (Figure 3943) show the testing
interface and results from functional devices. The tests
shouldbeperformedondevicesthroughthewafer.The
transistor tests should also be performed on various
NMOSandPMOSdeviceswithdifferentchannellengths
andwidthstodeterminethesmallestfunctionaldevice.
Figure34Completedwafer.
Figure 32 A student using the CASCADE probe station and AGILENT

deviceanalyzertotestCMOSdevices,
Figure33MicroprobesattheCASCADEprobestation.
Figure 36 Camera image from the CASCADE probe station. The

bottom two probe tips are positioned onto the aluminum contact
padsfortestingaresistor.
M
Methods:
:
ure37ScreencapturefromtheA
AGILENTSemico
onductorDeviceeAnalyzershowingtheresistorttestsetup.
Figu
Figu
ure 38 Result from testing a diiffused resistor. The program ramps
r
the voltage across the probes
p
and meaasures the curreent. The graph
disp
playstheresistan
nceasafunction
nofvoltage,theeapproximatereesistanceis11.5k.
M
Methods:
:
ure39ScreencapturefromtheA
AGILENTSemico
onductorDeviceeAnalyzershowingthediodetesstsetup.
Figu
Figu
ure40Resultfro
omtestingadiffu
usedPNdiode.TThegraphillustrratestheexponeentialbehavioro
ofthecurrentth
hroughadiode.
M
Methods:
:
Figu
ure 41 Screen caapture from the
e AGILENT Semiconductor Devicce Analyzer sho
owing the transistor test setup to achieve an Id
dvs Vd curve.
NotetheFETIdVd
dtestsetupuse
esonlythreepro
obes.AlsonotethatundertheD
DeviceParameteerssectionthePolarityislabeeledasNchfor
aNM
MOStransistor.
Figu
ure42TheresultoftheFETIdV
Vdtest.Notetheecharacteristicttriodesaturationshapeoftheccurvesasdrainaandgatevoltageesareramped.
Abrreakdownoftheeinthesaturatio
onregioncanalssobeseenfromthegraphbyth
heupwardcurveeatthelargedraainvoltages.
Methods:
Figure43ScreencapturefromtheAGILENTSemiconductorDeviceAnalyzershowingtheresultsofaSimpleVthtest.Whilethereisanother
similartestlabeledFETIdVg,theSimpleVthtestwillrevealanapproximatevalueofthethresholdvoltageforthetransistor.Inthiscasethe
resultsindicatethedevicehasathresholdvoltageof0.836V.
RESULTS:
Week14
Results:
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NOTES/CHANGES:
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DieLayout
Thefollowingimageisofasingledie.EachdiecontainsbothNMOSandPMOSdevicesaswellasanumber
ofteststructures.TheNMOSandPMOStransistorsareorientedsuchthatthelargerchannels(bothlengthand
width)areatthetopofthesegment.Atthebottom,nearthediodesarethesmallerchanneltransistordevices.
Layout:
Diffused/Aluminum
Resistors
Teststructure:
LateralDiffusionP+
PMOSTransistors/Diodes:
Teststructure:
LateralDiffusionN+
NMOSTransistors/Diodes:
Teststructure:
CMOSInverters:
Contacts/Contactchain
IncludesNMOSandPMOSdeviceswithdifferentW/Lratios.
Varyingchannellengthsandwidths.
Varyingchannellengthsandwidths.

Cmos Lab Manual: Special Thanks To: Andy Lingley Phil Himmer

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CMOS LAB MANUAL

CMOS LAB MANUAL

1. Familiarize students with the cleanroom

To maintain the integrity of the wafers and the

Figure 2 Microscope picture of the die layout. A more detailed

Figure 4 A student using a quartz rod to insert wafers into the

1. Measure the thickness of the SiO2 with

The goal of the photolithography step is to

Hardbaking is the final step in the

Proceed by patterning the photoresist with

Figure 8 A microscope picture of a patterned feature after

Figure 9 Several features indicating photoresist adhesion problems

Figure 10 An example of micromasking with features that were

The wafers need to be cleaned to remove

The goal of the phosphorous diffusion is to flip

Figure 12 Wafers submerged in Piranha Etch to remove organic

1. Take pictures using the microscope and

There is a large diffused rectangle/square test

Figure 17 A graph from the PhosPlus datasheet illustrating the

1. Measure the thickness of the SiO2 layer

The second mask contains the features for the

REPEAT: It has been observed, that without

The goal of the phosphorous diffusion is to

REPEAT: To diffuse Ntype (Phosphorous)

1. Take pictures using the microscope and

3. Obtain 4point probe measurements of

Use the Optical Microscope and CANON Digital

Use the JANDEL 4point probe to measure the

Figure 20 A graph from the PhosPlus datasheet illustrating the

REPEAT: To remove possible sources of

1. Measure the thickness of the SiO2 layer

The third mask contains the features for the

REPEAT: It has been observed, that without

The goal of the boron diffusion is to create

REPEAT: To diffuse Ptype (Boron) material,

1. Take pictures with microscope and

Use the Optical Microscope and CANON Digital

Use the 4point probe to measure the sheet

Camera to take pictures of the diffused PMOS sources

The goal of the fourth oxidation run is to grow

BOE for the appropriate amount of time or until the

1. Measure the thickness of the SiO2 layer

REPEAT: It has been observed, that without

1. Take pictures with microscope and

REPEAT: To remove the photoresist a solvent

The goal of the aluminum evaporation is to

Proceed by patterning the photoresist with

The fifth mask contains the features for the

The exposed aluminum is removed in PAE

between the silicon and aluminum. Before the anneal,

To anneal, place wafers into the quartz boat

Measure the thickness of the patterned

Figure 29 Profilometer data of an aluminum pad. The data reveals

Figure 32 A student using the CASCADE probe station and AGILENT

Figure 36 Camera image from the CASCADE probe station. The

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