Professional Documents
Culture Documents
AN890/1297 1/10
2/10
220VAC
EMI
APPLICATION NOTE
10T 1T D1 L1 24T
C17 100nF
D18 C6 D5 77930
T1 Tsf1 1nF 50T
24V Vo
R24 C4 C3 C2 C5 P1 13A
D19 30K R2 50T 1T 1000µF 1000µF 1000µF 1µF 10K
R30 180 10
T5 BC237
10T
D14
D15
400V R11 R10 C18
BRIDGE 100pF R1 3.6 1.2K 270 100nF
Figure 1: Schematic Diagram of 300W power supply
KBUBJ
C15 100nF 32T L6 9T
D16
T2 R8 R7 80K
430Ω
R19 D9 C29 C7
D17 30K 18V 3 3nF 100µF C9 1nF
R23 180
10T
T4 BC237
C16 390pF
COMP
C12 C11
1nF 4.7µF
APPLICATION NOTE
A high permeability core minimises the magnetis- The current sensing loop is closed by R1 selected
ing current to maintain a correct operation far according the transformers turns.
away of the core saturation point, at maximum Two small toroid ferrite cores (41005-TC, Magnet-
duty cycle and high core temperature. ics, F material, 3000µ) have been used, with 50
The proposed gate drive circuit allows the use of turns.
the 1:1:1 turns ratio drive transformer; moreover, R1 is defined by:
a controlled drain current rise time (by R15) and a
fast fall time are achieved. 50 ⋅ 1V
A very short min. Ton pulse give the possibility to R1 =
stabilise the output voltage at max. mains and Ipk
min. load.
where:
1V is the nominal threshold voltage of the cur-
Power MOS selection rent sense.
The two-switch topology allows to use the power Ipk is the inductor peak current( considering a
elements with a voltage breakdown equal to the 20% of current ripple, Ipk = Io + ∆I/2 = 13 + 1.3 =
max. rectified mains voltage. 14.3A)
The mosfet used here is the STW15NB50; this The calculated value is R1=3.5Ω
device, with 500V of BVdss give us also some
safety margin. Figure 2: Output limiting current characteristic
The basic parameters of the STW15NB50 are using two current transformers
listed below:
D96IN456
Rdson (25°C) = 0.36Ω max., at Id = 7.5A (0.72Ω Vo
max. at 100°C)
Coss = 430pF max., Qg = 80nC max., package
in TO-247 25
At min. supply voltage and max. load current, the
conduction losses for each transistor are: 20
Pcon = I 2rmsp ⋅ Rdson(100°C) 2= 2.232 ⋅ 0.72 =
3.6W where the effective Irmsp is calculated in
the power transformer section. 15
Estimating in about 3.5W switching and parasitic
losses, the total power losses of each transistor 10
are about 7W.
Considering 100°C of maximum operating junc-
tion temperature (at 40°C of ambient tempera- 5
ture) and a thermal resistance junction-heatsink
of 0.76°C/W, a heatsink of 3.5 °C/W is required
to dissipate both the transistors. 0
8 10 12 14 Io
Figure 3a: Output limiting current characteristic Figure 4a: Schematic diagram of the modified
using one current transformers. hiccup limiting current threshold
D96IN459
Vo
D96IN457 Vo
25 25
20 20
15 15
10 10
5 5
0 0
4 6 8 10 12 14 Io 4 6 8 10 12 14 Io
Figure 3b: limiting current schematic diagram Figure 4b: Output limiting current characteristic
1T D1 L1
1T D1 L1
P1
50T
C6
50T
10T D5 C6 3K
10T D5 C4 C3 C2
R2
R2 3K
R11
1.2K
D2
R1 3.5Ω
D2
R1 120K
R8
430Ω C16 R8
330pF C16 2K
ISEN
ISEN VREF
13 13 4
L4990A L4990A 5
FB
D96IN458
D96IN460
Using this solution, also the ∆I/∆Vo is higher, re- For a correct functionality a ultra-fast recovery di-
ducing the difference from the intervention point ode is requested, mainly to limit switching losses
and the short circuit current values. and EMI problems.
This solution can be used with two current trans- To calculate the conduction losses the following
formers too. equation has been applied to the selected type,
BYV52-200.
Output Diode selection For the single diode the formula is:
The reverse voltage of the output diodes is given
by the formula: P = 0.7 ⋅ I(AV) + 0.0075 ⋅ I2(RMS)
Vr = Vin max/n = 375/3,3= 114V, that, rearranged to take into account both the di-
odes, becomes:
where n is the transformer turns ratio.
4/10
APPLICATION NOTE
z
heatsink has to be dimensioned for about 4°C/W.
KH
700
2K
Power transformer design 1K
The forward transformer delivers energy from the
KHz
primary to the secondary without any storage. 500
100
The only consideration is with regards of the 200
Hz
magnetising current, that has to be limited at a
1M
safety value far from core saturation. 100
Our core selection is based on AP, area product,
z
50
KH
Hz
z
defined as AP = Aw ⋅ Ae.
KH
400
25K
200
20
5/10
APPLICATION NOTE
As for the wire selection, the skin effect is not The magnetising current is:
negligible at this frequency.
To reduce this effect, the wire diameter should Vin(min) ⋅ ton 200 ⋅ 2.4 ⋅ 10−6
Im = = = 180mA
not exceed two times the penetration depth: Lp 2.7 ⋅ 10−3
7.5 The primary peak current is:
δ= = 0.17mm
f
√
Po
Ipk = =
and therefore a wire diameter of 0.36mm η ⋅ Vinmindc ⋅ Dmax
(AWG27) is suitable. However, to have a suffi-
cient copper area, a certain number of these
312
wires will be twisted together. = = 3.22A
0.9 ⋅ 200 ⋅ 0.48
To define the numbers of wires this equation can
be used: A good condition is when Im 10% of Ipk; in this
case Im is imposed lower than 6% of Ip.
I2rms
Nwire = R ⋅ Nturns ⋅ Iw ⋅
Ploss
Output inductor & auxiliary supply
where: To calculate the inductor value, the max. current
R = resistance of the wire per cm ripple has been set at 2.6A, 20% of Iomax.
lw = winding length (cm) The max. current ripple occurs at max. input volt-
age; in this operating condition the min duty cycle
is:
As to the primary side:
n ⋅ (Vo + Vloss) 3.2 ⋅ (24 + 1.5)
Po Dmin = = = 0.22
Irmsp = = Vinmax 375
η ⋅ Vinmindc ⋅ √
D
max
The inductor value is defined taking into account
312 the current downslope which corresponds to the
= = 2.23A off-time of the power switches:
0.9 ⋅ 200 ⋅ √
0.48
The RMS secondary current is 3.4 times the pri- Toff max. = T⋅ (1-Dmin) = 5 ⋅ (1-0.22) = 3.9µs
mary one. Considering the copper losses equally
dissipated between primary and secondary wind-
ings, this yields 3 wires in parallel (Npwire) for that yields:
the primary winding and 10 wires (Nswire) for
secondary winding. (Vo + Vloss) ⋅ Toffmax
Lo = =
The ETD39 core has a winding area of 1.7 cm2 ∆Imax
but the real available space is approximately 40%
(0.68 cm2): isolation requirements and fill factor (24 + 1.5) ⋅ 3.9 ⋅ 10−6
must be taken into account. The total copper area = = 39µH
is: 2.6
6/10
APPLICATION NOTE
C ⋅ (Vcp − Vcm)
Ich = =
tc
INT VREF
(2.5V) + ∆V’O ∆VC ∆VO
440 ⋅ 10−6⋅ (248 − 215) + GE/A GPW
= = 8.8A -
1.6 ⋅ 10−3
P
The RMS current that the capacitor has to sub- D96IN462
stain is:
I rms = Ich ⋅ √
2 ⋅ tc ⋅ F50 − (2 ⋅ tc ⋅ F50)2 =
S
= 8.8 ⋅ √
1+
3.2 ⋅ 10−3 ⋅ 50 − (3.2 ⋅ 10−3 ⋅ 50)2 = 3.32A ∆Vo n Sz
Gpw(s) = = ⋅ Ro ⋅
∆Vc 3 ⋅ Rs
S
√ 1+
2
I
Irmstot = 2
I +
rms50
rms200KHz
= Sp
1.6
7/10
APPLICATION NOTE
65
R11 = 12kΩ 0 2 4 6 8 10 12 14
Figure 8a: Output voltage response versus
P1+ R12 = 1kΩ Fig 8b. Enlarged section of load
D96IN464
The R7 value is:
∆Vo
R7 = ⋅ (P1 + R12) = 80kΩ
∆Vc
1
C9 = = 1.8nF
2 ⋅ π ⋅ Fz
3 ⋅ R7
CH2: Io (5A/div)
Overvoltage protection
The voltage divider, R9 and R10, is providing for T: 1ms/div
8/10
APPLICATION NOTE
The efficiency is quite constant and equal or Fig 8a. shows the load transient response, at
above 85% from 2A to full load. nominal ac input voltage value and output load
At min. load of 0.5A, it’s 70% at 220Vac. The total variation from 1A to 12A, in a couple of msec, and
losses, for an amount of 3.6W are mainly due to fig 8b shows the enlarged section at the moment
Coss of the power mos devices and transformer of current load rise.
core losses due to the magnetizing current. Fig 9. To be noticed the absence of output over-
shoot on the output voltage.
Figure 8b: Englanded section of load transient Figure 9: show the turn-on time at mains switch-on
response at load current rise
D96IN465 D96IN466
CH1: Vo (10V/div)
CH2: Io (2A/div)
CH1: Vo (100mV/div)
T:100µs/div T:100ms/div
9/10
APPLICATION NOTE
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-
THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
10/10