Ordering number : ENN6989A

2SC5763
NPN Triple Diffused Planar Silicon Transistor

2SC5763
Switching Regulator Applications

Features

Package Dimensions
unit : mm 2010C
[2SC5763]
10.2 3.6 5.1
2.7 6.3

High breakdown voltage. High reliability. High-speed switching. Wide ASO. Adoption of MBIT process.

4.5

1.3

18.0

5.6

1.2
14.0

0.8 1 2 3
2.7

15.1

0.4 1 : Base

2 : Collector 3 : Emitter
2.55

Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg PW300s, Duty cycle10% Tc=25C

2.55

SANYO : TO-220

Conditions

Ratings 700 400 8 7 14 1.75 55 150 --55 to +150

Unit V V V A A W W C C

Electrical Characteristics at Ta=25C

Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO VCB=400V, IE=0 VEB=5V, IC=0 Conditions Ratings min typ max 10 10 Unit A A

Continued on next page.

* : The hFE1 of the 2SC5763 is classified as follows. Rank hFE1 M 20 to 40 N 30 to 50

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D0301 TS IM TA-3501 / 71801 TS IM TA-3234 No.6989-1/4

2SC5763
Continued from preceding page.
Parameter Symbol hFE1 hFE2 hFE3 VCE(sat) VBE(sat) fT Cob V(BR)CBO V(BR)CEO V(BR)EBO ton tstg tf Conditions VCE=5V, IC=0.8A VCE=5V, IC=4A VCE=5V, IC=1mA IC=4A, IB=0.8A IC=4A, IB=0.8A VCE=10V, IC=0.8A VCB=10V, f=1MHz IC=1mA, IE=0 IC=5mA, RBE= IE=1mA, IC=0 IC=5A, IB1=1A, IB2=--2A, RL=40, VCC=200V IC=5A, IB1=1A, IB2=--2A, RL=40, VCC=200V IC=5A, IB1=1A, IB2=--2A, RL=40, VCC=200V 700 400 8 0.5 2.5 0.25 Ratings min 20* 10 10 0.8 1.5 17 80 V V MHz pF V V V s s s typ max 50* Unit

DC Current Gain Collectoe-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time

Switching Time Test Circuit

PW=20s D.C.1% INPUT VR 50 + 100F VBE= --5V IB1 OUTPUT IB2 RB + 470F VCC=200V

RL

10

IC -- VCE
A 700mA 600m 900mA 800m A
Collector Current, IC -- A

8 7 6 5 4

IC -- VBE
VCE=5V

Collector Current, IC -- A

1000m

500mA 400mA 300mA

200mA
100mA

20 C
0 0.2 0.4 0.6

2 1

0 0 2 4 6 8

IB=0
10 IT03053

0 0.8 1.0 1.2 IT03054

Collector-to-Emitter Voltage, VCE -- V

100 7 5

hFE -- IC

Base-to-Emitter Voltage, VBE -- V

1.0 7

VCE(sat) -- IC

VCE=5V
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V

IC / IB=5

Ta=120C

5 3 2

DC Current Gain, hFE

3 2

25C

--40C

10 7 5 3 2 1.0 0.01

0.1 7 5 3 2

--40C
25C

= Ta

5 7 0.1

5 7 1.0

Collector Current, IC -- A

5 7 10 IT03055

0.01 0.01

5 7 0.1

Ta= 1
12 0C

5 7 1.0

25C --40C
2 3

Collector Current, IC -- A

5 7 10 IT03056

No.6989-2/4

2SC5763
10 7

VBE(sat) -- IC
IC / IB=5 Switching Time, SW Time -- s

10 7 5 3 2

SW Time -- IC
VCC=200V IC / IB1=5, IB2 / IB1=2.5 R load
tstg

Base-to-Emitter Saturation Voltage, VBE(sat) -- V

5 3 2

1.0 7 5 3 2

Ta= --40C

1.0 7 5 3 2

25C

120C

tf

0.1 0.01

5 7 0.1

5 7 1.0

3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2

Forward Bias A S O
ICP=14A IC=7A
DC
1m

Collector Current, IC -- A

5 7 10 IT03057

0.1 0.1

1.0

Reverse Bias A S O
ICP

Collector Current, IC -- A

7 10 IT03058

Collector Current, IC -- A

op

Collector Current, IC -- A

50s 10 0 s

10 7 5 3 2 1.0 7 5 3 2

era

tio

10 ms
S/ B Li mi ted

0.01 1.0

Tc=25C Single pulse

2 3 5 7 10 2 3 5 7 100 2 3

Collector-to-Emitter Voltage, VCE -- V

2.0 1.8 1.75

5 7 1000 IT03077

0.1 1.0

Tc=25C IB2= --1.2A L=500H, Single pulse

2 3 5 7 10 2 3 5 7 100 2 3

PC -- Ta

Collector-to-Emitter Voltage, VCE -- V

80 70

5 7 1000 IT03060

PC -- Tc

Collector Dissipation, PC -- W

1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160

Collector Dissipation, PC -- W

60 55 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160

No

he

at

sin

Ambient Temperature, Ta -- C

IT03061

Case Temperature, Tc -- C

IT03062

No.6989-3/4

2SC5763

Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2001. Specifications and information herein are subject to change without notice.
PS No.6989-4/4

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