FQP27P06

May 2001

QFET
FQP27P06
60V P-Channel MOSFET
General Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

TM

Features
-27A, -60V, RDS(on) = 0.07 @VGS = -10 V Low gate charge ( typical 33 nC) Low Crss ( typical 120 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175C maximum junction temperature rating

S
!

G!

G DS

TO-220
FQP Series
!

Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL

TC = 25C unless otherwise noted

Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)

FQP27P06 -60 -27 -19.1 -108 25

(Note 2) (Note 1) (Note 1) (Note 3)

Units V A A A V mJ A mJ V/ns W W/C C C

Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)

560 -27 12 -7.0 120 0.8 -55 to +175 300

- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds

Thermal Characteristics
Symbol RJC RCS RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient Typ -0.5 -Max 1.25 -62.5 Units C/W C/W C/W

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

FQP27P06

Elerical Characteristics
Symbol Parameter

TC = 25C unless otherwise noted

Test Conditions

Min

Typ

Max

Units

Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -60 V, VGS = 0 V VDS = -48 V, TC = 150C VGS = -25 V, VDS = 0 V VGS = 25 V, VDS = 0 V -60 -------0.06 -------1 -10 -100 100 V V/C A A nA nA

On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 A VGS = -10 V, ID = -13.5 A VDS = -30 V, ID = -13.5 A
(Note 4)

-2.0 ---

-0.055 12.4

-4.0 0.07 --

V S

Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = -25 V, VGS = 0 V, f = 1.0 MHz ---1100 510 120 1400 660 155 pF pF pF

Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -48 V, ID = -27 A, VGS = -10 V
(Note 4, 5)

VDD = -30 V, ID = -13.5 A, RG = 25

(Note 4, 5)

--------

18 185 30 90 33 6.8 18

45 380 70 190 43 ---

ns ns ns ns nC nC nC

Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = -27 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = -27 A, dIF / dt = 100 A/s
(Note 4)

------

---105 0.41

-27 -108 -4.0 ---

A A V ns C

Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.9mH, IAS = -27A, VDD = -25V, RG = 25 , Starting TJ = 25C 3. ISD -27A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

FQP27P06

Typical Characteristics

10

10

-I D , Drain Current [A]

-I D, Drain Current [A]

VGS - 15.0 V - 10.0 V - 8.0 V - 7.0 V - 6.0 V - 5.5 V - 5.0 V Bottom : - 4.5 V Top :

10

10

175

10

25 -55

10

Notes : 1. 250 s Pulse Test 2. TC = 25

-1

Notes : 1. VDS = -30V 2. 250 s Pulse Test

10

10

10

10

-1

10

-VDS, Drain-Source Voltage [V]

-VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

0.24

10

0.20

RDS(on) [ ], Drain-Source On-Resistance

0.16 VGS = - 10V 0.12 VGS = - 20V 0.08

-I DR , Reverse Drain Current [A]

10

10

175

0.04
Note : TJ = 25

25

Notes : 1. VGS = 0V 2. 250 s Pulse Test

0.00 0 10 20 30 40 50 60 70 80 90 100 110 120 130

10

-1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

-ID , Drain Current [A]

-VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature

3000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd

12

2500

Crss = Cgd

10

Coss
2000

-V GS , Gate-Source Voltage [V]

VDS = -30V
8

Capacitance [pF]

Ciss
1500

Notes : 1. VGS = 0 V 2. f = 1 MHz

VDS = -48V

1000

Crss
500

2
Note : ID = -27 A

0 -1 10

0 10
0

10

10

15

20

25

30

35

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

FQP27P06

Typical Characteristics

(Continued)

1.2

2.5

-BV DSS , (Normalized) Drain-Source Breakdown Voltage

2.0

RDS(ON) , (Normalized) Drain-Source On-Resistance

1.1

1.5

1.0

1.0

0.9

Notes : 1. VGS = 0 V 2. ID = -250 A

0.5

Notes : 1. VGS = -10 V 2. ID = -13.5 A

0.8 -100

-50

50

100
o

150

200

0.0 -100

-50

50

100
o

150

200

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature

30
Operation in This Area is Limited by R DS(on)

10

25

100 s 10 ms

-I D, Drain Current [A]

10

DC

-I D, Drain Current [A]

1 ms

20

15

10

10

Notes : 1. TC = 25 C 2. TJ = 175 C 3. Single Pulse

o o

10

-1

10

10

10

0 25

50

75

100

125

150

175

-VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs. Case Temperature

( t) , T h e r m a l R e s p o n s e

10

D = 0 .5
N o te s : 1 . Z J C ( t ) = 1 . 2 5 /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z J C( t )

0 .2 0 .1
10
-1

0 .0 5

PDM
0 .0 2 0 .0 1

JC

t1
s in g le p u ls e

t2

10

-2

10

-5

10

-4

10

-3

10

-2

10

-1

10

10

t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ]

Figure 11. Transient Thermal Response Curve

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

FQP27P06

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS Qg -10V Qgs Qgd

VGS

DUT
-3mA

Charge

Resistive Switching Test Circuit & Waveforms

VDS VGS RG

RL VDD
td(on)

t on tr td(off)

t off tf

VGS

10%

-10V

DUT VDS
90%

Unclamped Inductive Switching Test Circuit & Waveforms

L VDS ID RG DUT
tp

BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD

tp

Time VDS (t)

VDD

VDD ID (t) IAS BVDSS

-10V

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

FQP27P06

Peak Diode Recovery dv/dt Test Circuit & Waveforms

+ VDS DUT _

I SD L Driver RG
Compliment of DUT (N-Channel)

VDD

VGS

dv/dt controlled by RG ISD controlled by pulse period

VGS ( Driver )

Gate Pulse Width D = -------------------------Gate Pulse Period

10V

I SD ( DUT )

Body Diode Reverse Current

IRM
di/dt IFM , Body Diode Forward Current

VDS ( DUT )

VSD

Body Diode Forward Voltage Drop Body Diode Recovery dv/dt

VDD

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

FQP27P06

Package Dimensions

TO-220
9.90 0.20 1.30 0.10 2.80 0.10 (8.70) 3.60 0.10 (1.70) 4.50 0.20

1.30 0.05

+0.10

9.20 0.20

(1.46)

13.08 0.20

(1.00)

(3.00)

15.90 0.20

1.27 0.10

1.52 0.10

0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20]

10.08 0.30

18.95MAX.

(3.70)

(45 )
0.50 0.05
+0.10

2.40 0.20

10.00 0.20

2001 Fairchild Semiconductor Corporation

Rev. A2. May 2001

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PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Preliminary

No Identification Needed

Full Production

Obsolete

Not In Production

2001 Fairchild Semiconductor Corporation

Rev. H2