Fqpf2n70 700v N Chanel Mosfet

FQPF2N70
QFET
FQPF2N70
700V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
TM
Features
2.0A, 700V, RDS(on) = 6.3 @VGS = 10 V Low gate charge ( typical 9.0 nC) Low Crss ( typical 5.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
!
"
G! GD S
! "
" "
TO-220F
FQPF Series
Absolute Maximum Ratings

Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed
(Note 1)
FQPF2N70 700 2.0 1.3 8.0 30

(Note 2) (Note 1) (Note 1) (Note 3)
Units V A A A V mJ A mJ V/ns W W/C C C
Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C)
140 2.0 2.8 4.5 28 0.22 -55 to +150 300
- Derate above 25C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds
Thermal Characteristics
Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ --Max 4.46 62.5 Units C/W C/W
2003 Fairchild Semiconductor Corporation
Rev. A, March 2003
FQPF2N70
Electrical Characteristics
Symbol Parameter
TC = 25C unless otherwise noted
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 700 V, VGS = 0 V VDS = 560 V, TC = 125C VGS = 30 V, VDS = 0 V VGS = -30 V, VDS = 0 V 700 ------0.4 ------10 100 100 -100 V V/C A A nA nA
On Characteristics
VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 1.0 A VDS = 50 V, ID = 1.0 A
(Note 4)
3.0 ---
-5.0 2.45
5.0 6.3 --
V S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz ---270 38 5 350 50 7 pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 560 V, ID = 2.0 A, VGS = 10 V
(Note 4, 5)
VDD = 350 V, ID = 2.0 A, RG = 25

(Note 4, 5)
--------
----8.1 1.7 4.4
30 80 50 70 11 ---
ns ns ns ns nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings

IS ISM VSD trr Qrr Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 2.0 A Drain-Source Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0 V, IS = 2.0 A, dIF / dt = 100 A/s
(Note 4)
------
---260 1.09
2.0 8.0 1.4 ---
A A V ns C
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 45mH, IAS = 2.0A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 2.0A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature
Rev. A, March 2003
FQPF2N70
Typical Characteristics
ID, Drain Current [A]
10
ID , Drain Current [A]
VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top :
150 10
0
25 -55
Note 1. VDS = 50V 2. 250 s Pulse Test
10
-1
Note : 1. 250 s Pulse Test 2. TC = 25
10
-1
10
10
10
-1
10
VDS, Drain-Source Voltage [V]
VGS , Gate-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
15
RDS(ON) [ ], Drain-Source On-Resistance
VGS = 20V
9
IDR , Reverse Drain Current [A]
12
VGS = 10V
10
150 25
Note : 1. VGS = 0V 2. 250 s Pulse Test
-1
3
Note : TJ = 25
0 0 1 2 3 4 5
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-Drain Voltage [V]
Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage Variation vs. Source Current and
500
12
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
VDS = 140V
10
400
VGS, Gate-Source Voltage [V]
Ciss
VDS = 350V
8
VDS = 560V
Capacitances [pF]
300
Coss
200
Crss
100
Note ; 1. VGS = 0 V 2. f = 1 MHz
2
Note : ID = 2 A
0 -1 10
0 10
0
10
10
QG, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Rev. A, March 2003
FQPF2N70
Typical Characteristics
(Continued)
1.2
3.0
2.5
BV DSS , (Normalized) Drain-Source Breakdown Voltage
RDS(ON) , (Normalized) Drain-Source On-Resistance
1.1
2.0
1.0
1.5
1.0
Note : 1. VGS = 10 V 2. ID = 3.1 A
0.9
Note : 1. VGS = 0 V 2. ID = 250 A
0.5
0.8 -100
-50
50
100
o
150
200
0.0 -100
-50
50
100
o
150
200
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation vs. Temperature

2.0
Operation in This Area is Limited by R DS(on)
Figure 8. On-Resistance Variation vs. Temperature
10
1.5
100 s
10
1 ms 10 ms 100 ms DC
10
-1
Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse

o
10
-2
1.0
0.5
10
10
10
10
0.0 25
50
75
100
125
150
TC, Case Temperature []
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case Temperature
(t), T h e rm a l R e s p o n s e
D = 0 .5
10
0
0 .2 0 .1 0 .0 5
N o te s : 1 . Z J C (t) = 4 .4 6 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t)
10
-1
0 .0 2 0 .0 1
PDM t1 t2
s in g le p u ls e
JC
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
10
t 1 , S q u a r e W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
Rev. A, March 2003
FQPF2N70
Gate Charge Test Circuit & Waveform
50K 12V 200nF 300nF
Same Type as DUT VDS
VGS Qg 10V Qgs Qgd
VGS
DUT
3mA
Charge
Resistive Switching Test Circuit & Waveforms
VDS VGS RG
RL VDD
VDS
90%
10V
DUT
VGS
10%
td(on) t on
tr
td(off) t off
tf
Unclamped Inductive Switching Test Circuit & Waveforms
L VDS ID RG DUT
tp
BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD BVDSS IAS VDD VDD
tp
ID (t) VDS (t) Time
10V
Rev. A, March 2003
FQPF2N70
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+ VDS _
I SD L Driver RG
Same Type as DUT
VDD
VGS
dv/dt controlled by RG ISD controlled by pulse period
VGS ( Driver )
Gate Pulse Width D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD ( DUT ) IRM
di/dt
Body Diode Reverse Current
VDS ( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward Voltage Drop
Rev. A, March 2003
FQPF2N70
Package Dimensions
TO-220F
3.30 0.10 10.16 0.20 (7.00) 3.18 0.10 2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47 9.75 0.30 0.80 0.10

(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 0.05 2.54TYP [2.54 0.20] 4.70 0.20

+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
2003 Fairchild Semiconductor Corporation Rev. A, March 2003
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACEx FACT ActiveArray FACT Quiet series Bottomless FAST CoolFET FASTr CROSSVOLT FRFET DOME GlobalOptoisolator EcoSPARK GTO E2CMOS HiSeC EnSigna I2C Across the board. Around the world. The Power Franchise Programmable Active Droop DISCLAIMER
ImpliedDisconnect ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE MSX MSXPro OCX OCXPro OPTOLOGIC OPTOPLANAR
PACMAN POP Power247 PowerTrench QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect SILENT SWITCHER SMART START
SPM Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation UHC UltraFET VCX
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY

FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms

Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
Rev. I2

Fqpf2n70 700v N Chanel Mosfet

Uploaded by

Document Information

Original Description:

Original Title

Copyright

Available Formats

Share this document

Share or Embed Document

Sharing Options

Did you find this document useful?

Is this content inappropriate?

Copyright:

Available Formats

Fqpf2n70 700v N Chanel Mosfet

Uploaded by

Copyright:

Available Formats

FQPF2N70

Absolute Maximum Ratings

TC = 25C unless otherwise noted

FQPF2N70 700 2.0 1.3 8.0 30

Units V A A A V mJ A mJ V/ns W W/C C C

140 2.0 2.8 4.5 28 0.22 -55 to +150 300

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

TC = 25C unless otherwise noted

VDD = 350 V, ID = 2.0 A, RG = 25

----8.1 1.7 4.4

Drain-Source Diode Characteristics and Maximum Ratings

2.0 8.0 1.4 ---

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

ID, Drain Current [A]

ID , Drain Current [A]

Note : 1. 250 s Pulse Test 2. TC = 25

VDS, Drain-Source Voltage [V]

VGS , Gate-Source Voltage [V]

Figure 1. On-Region Characteristics

Figure 2. Transfer Characteristics

RDS(ON) [ ], Drain-Source On-Resistance

IDR , Reverse Drain Current [A]

ID, Drain Current [A]

VSD , Source-Drain Voltage [V]

Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage

VGS, Gate-Source Voltage [V]

Note ; 1. VGS = 0 V 2. f = 1 MHz

VDS, Drain-Source Voltage [V]

QG, Total Gate Charge [nC]

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

BV DSS , (Normalized) Drain-Source Breakdown Voltage

RDS(ON) , (Normalized) Drain-Source On-Resistance

TJ, Junction Temperature [ C]

TJ, Junction Temperature [ C]

Figure 7. Breakdown Voltage Variation vs. Temperature

Figure 8. On-Resistance Variation vs. Temperature

ID, Drain Current [A]

Notes : 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

TC, Case Temperature []

Figure 9. Maximum Safe Operating Area

Figure 10. Maximum Drain Current vs. Case Temperature

Figure 11. Transient Thermal Response Curve

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

Gate Charge Test Circuit & Waveform

50K 12V 200nF 300nF

Same Type as DUT VDS

VGS Qg 10V Qgs Qgd

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

ID (t) VDS (t) Time

2003 Fairchild Semiconductor Corporation

Rev. A, March 2003

Peak Diode Recovery dv/dt Test Circuit & Waveforms

dv/dt controlled by RG ISD controlled by pulse period