TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor

November 2008

TIP110/TIP111/TIP112
NPN Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base-Emitter Shunt Resistors Complementary to TIP115/116/117 High DC Current Gain : hFE=1000 @ VCE=4V, IC=1A(Min.) Low Collector-Emitter Saturation Voltage Industrial Use

Equivalent Circuit C

TO-220 2.Collector 3.Emitter

R1 R2 E

1.Base

R1 @ 10k W R2 @ 0.6k W

Absolute Maximum Ratings*

Symbol VCBO Collector-Base Voltage

T a = 25C unless otherwise noted

Parameter : TIP110 : TIP111 : TIP112

Ratings 60 80 100 60 80 100 5 2 4 50 2 50 150 - 65 ~ 150

Units V V V V V V V A A mA W W C C

VCEO VEBO IC ICP IB PC TJ TSTG

Collector-Emitter Voltage : TIP110 : TIP111 : TIP112 Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 1

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TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor

Electrical Characteristics* Ta=25C unless otherwise noted

Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage : TIP110 : TIP111 : TIP112 Collector Cut-off Current : TIP110 : TIP111 : TIP112 Collector Cut-off Current : TIP110 : TIP111 : TIP112 Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage Output Capacitance VCB = 60V, IE = 0 VCB = 80V, IE = 0 VCB = 100V, IE = 0 VBE = 5V, IC = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 4V, IC = 2A VCB = 10V, IE = 0, f = 0.1MHz 1000 500 2.5 2.8 100 V V pF 1 1 1 2 mA mA mA mA VCE = 30V, IB = 0 VCE = 40V, IB = 0 VCE = 50V, IB = 0 2 2 2 mA mA mA Test Condition IC = 30mA, IB = 0 Min. 60 80 100 Typ. Max. Units V V V

ICEO

ICBO

IEBO hFE VCE(sat) VBE(on) Cob

* Pulse Test: Pulse Width300ms, Duty Cycle2%

2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 2

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TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor

Typical Characteristics

2.0 1.8

IB = 500mA IB = 450mA IB = 400mA

I B=

mA 350

10000

IC[A], COLLECTOR CURRENT

00 IB = 3

mA

VCE = 4V

1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0

hFE, DC CURRENT GAIN

mA IB = 250

1000

IB = 200mA

100

IB = 150mA

10 0.01

0.1

10

VCE[V], COLLECTOR-EMITTER VOLTAGE

IC[A], COLLECTOR CURRENT

Figure 1. Static Characteristic

Figure 2. DC current Gain

VBE(sat), VCE(sat)[V], SATURATION VOLTAGE

100

1000

I C = 500 IB

f = 0.1 MHz

10

Cob[pF], CAPACITANCE

100

VBE(sat)
1

10

VCE (sat)

0.1 0.01

0.1

10

1 0.01

0.1

10

100

IC[A], COLLECTOR CURRENT

V CB[V], COLLECTOR-BASE VOLTAGE

Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

10

80 70

IC[A], COLLECTOR CURRENT

PC[W], POWER DISSIPATION

60 50 40 30 20 10 0

5mS
DC
1

1mS

0.1

TIP 110 TIP 111 TIP 112

1 10 100

25

50
o

75

100

125

150

175

VCE[V], COLLECTOR-EMITTER VOLTAGE

TC[ C], CASE TEMPERATURE

Figure 5. Safe Operating Area

Figure 6. Power Derating

2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 3

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TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor

Mechanical Dimensions

TO220

2007 Fairchild Semiconductor Corporation TIP110/TIP111/TIP112 Rev. 1.0.0 4

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TIP110/TIP111/TIP112 NPN Epitaxial Silicon Darlington Transistor

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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I31

Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

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