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A Wafer-Scale CMP Modeling Framework, Extended to Industrial Scale Semiconductor Manufacturing

Gagan Srivastava, C. Fred Higgs III


Carnegie Mellon University Particle Flow & Tribology Laboratory

Annual STLE Meeting May 8, 2013 Detroit, Michigan


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Overview

Introduction and motivation Recap of PAML-lite

Modeling of physical interactions Representative results

Model Expansions

Oscillations Industrial Applications

Conclusion

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Particle Flow & Tribology Laboratory


Core competencies Our strength is that we develop:
Experiments Simulations Predictions

Granular flows

Powder lubrication
One of the most difficult areas of tribology relates to the multi-physics behavior of particulate materials large or small. They can wear and damage relatively sliding materials, or they can be used to protect materials.

Slurry
Carnegie Mellon University Particle Flow & Tribology Laboratory

Motivation
Slurry

Wafer Pad

CMP, often results in defective output. To increase the yield and minimize waste, accurate modeling of CMP is required.
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CMP : Feature Scale Non-uniform Fluid Pressure


Affects Dishing and Erosion

Dishing only
Before CMP Copper Copper seed Tantalum Silicon Dioxide Silicon

Erosion only

Ideal CMP

Dishing and Erosion

Higgs, et al., International Asia Tribology Conference, 2002


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CMP : Wafer Scale

Differential wear across the wafer

Wafer curvature

Material removal map on a polished wafer Nolan and Cadien (2012)

Variation of mean material removal with wafer radius of curvature Tseng et al. (1999)

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History of Chemical Mechanical Polishing Modeling



Empirical

Preston (1927), Zhao and Shi ( ), Boning (1990s) Runnels (1994 ), Sundararajan and Thakurta (1994) Zhao and Chang (2002), Luo and Dornfeld (2001) Shan et al. (2000), Higgs et al. (2005), Jin et al. (2005)

Fluid hydrodynamics based erosion wear

Contact mechanics

EHL / Mixed Lubrication (no wear)

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Empirical Models
MRR = k PV H

Zhao and Shi (1998)

Boning and associates (1997)


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Empirical Models

Always include an all-purpose, empirical constant 'K'

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Fluid Hydrodynamics and Erosion Wear Based Models

Runnels and Eyman (1994) Only load carrying capacity No wear modeling Sundararajan et al. (1999)
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Fluid Hydrodynamics and Erosion Wear Based Models

Ignored the effect of solid-solid contact between wafer and pad. Unable to capture the effect of using different abrasives and pads

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Contact Mechanics Based Models


Particle Mono-layer Model Soft Pad Model
Known Particle Size Distribution

Material Removed Per Particle

Zhao and Chang (2002) Luo and Dornfeld (2001)


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Particle Flow & Tribology Laboratory

Contact Mechanics Based Models

Attempt to modify the Preston's equation by calculating Preston's coefficient (k) based on known parameters. Ignored the effect of the slurry.

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EHL / Mixed Lubrication Based Models

1-D EHL Model

2-D Mixed Lubrication Model

Shan et al. (2000)

Jin et al. (2005)

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Particle Flow & Tribology Laboratory

EHL / Mixed Lubrication Based Models

Ignored the effect of particles. No wear calculation.

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Particle Flow & Tribology Laboratory

CMP : A Mixed Lubrication System

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Particle Flow & Tribology Laboratory

Slurry Flows: Particles Augmented Mixed Lubrication (PAML)


(a) Other PAML Tribosystems (b)

Bearing wear via lubricant debris

Artificial hip wear

(c) (d)

Teeth wear Disk drive contamination wear


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Particle Flow & Tribology Laboratory

CMP Model: Particle Augmented Mixed Lubrication (PAML)


Slurry
Fluid Mechanics Particle Dynamics Contact Mechanics

Tribosurfaces
Wear

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Particle Flow & Tribology Laboratory

CMP Model: Particle Augmented Mixed Lubrication (PAML)

A deterministic model capturing major physical phenomenon :


Fluid hydrodynamics (3D Navier Stokes Equations) Contact mechanics (Winkler Elastic Foundation) Particle dynamics (Eulerian Lagrangian treatment) Wear (Abrasive wear due to spherical particles) Addresses asperity scale issues: dishing, erosion

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Particle Flow & Tribology Laboratory

CMP Model: Particle Augmented Mixed Lubrication (PAML)

Computationally very expensive. Could only model very small domains, at a very slow computational speed.

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Particle Flow & Tribology Laboratory

Objective
To develop an experimentally validated, computationally efficient framework, without sacrificing major physical phenomenon in action during CMP

Extend the model to industrial scale

PAML lite
(Computations: From Days to Minutes)

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Particle Flow & Tribology Laboratory

Virtual CMP
PAML lite
Fluid Mechanics
Film thickness
h = h(r,)

Contact Mechanics
Separation
d = d(r,)

Particle Dynamics
Uniform Concentration Size distribution

Wear
Material Removal Rate MRR = f(,w,,V)

Hydrodynamic Pressure
p = p[h, , ]

Elastic Contact
= (z, F, E)

Active Particles
Nactive=f (G, , )

Equilibrium

Particle Indentation
= f (, Hw*, pd)

PAML-lite is a wafer scale model


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PAML - lite : Fluid Mechanics


Reynolds Equation in Polar Coordinates (Beschorner et al. 2009)

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PAML - lite : Contact Mechanics



o o o
Wafer : A flat rigid punch pressed against the pad Pad : Winkler Elastic Foundation (Johnson, 1983)
Asperities act as independent springs Deformation in the plane of the pad is neglected Normal deformation due to tangential shear loading is neglected
LOAD
WAFE R

PARALLEL SPRINGS RIGID WALL

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Particle Flow & Tribology Laboratory

PAML - lite : Contact Mechanics



o o o
Wafer : A flat rigid punch pressed against the pad Pad : Winkler Elastic Foundation (Johnson, 1983)
Asperities act as independent springs Deformation in the plane of the pad is neglected Normal deformation due to tangential shear loading is neglected
LOAD
WAFE R

PARALLEL SPRINGS RIGID WALL

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Particle Flow & Tribology Laboratory

PAML - lite : Wear



Soft pad model given by Luo and Dornfeld (2003) is implemented Abrasive wear due to nano-particles getting trapped between a pad asperity and the wafer Total wear at an asperity contact depends on:

o o

Number of active particles (Particles participating in the wear event) Average wear (Material removed by a particle with diameter equal to the average diameter of active particles)

Abrasive particle sizes follow normal distribution

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Particle Flow & Tribology Laboratory

PAML - lite : Model Flowchart


START Guess ,,0 Film thickness : h (,,0) Compute new: ,,

Find: fluid pressure p(r,)

Find: contact stress (r,)

Fz,Mx, My = 0 YES Equilibrium orientation {,,}, p(r,), (r,) Calculate Active Particles

NO

Calculate Average Wear

Calculate Total Wear


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Particle Flow & Tribology Laboratory

PAML - lite : Model Flowchart


START Guess ,,0 Film thickness : h (,,0)
Reynold's Equation Winkler Foundation

Compute new: ,,

Find: fluid pressure p(r,)


Integrator

Find: contact stress (r,)

Fz,Mx, My = 0 YES Equilibrium orientation {,,}, p(r,), (r,) Calculate Active Particles

NO Root Finder

Calculate Average Wear

Calculate Total Wear


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Modeling Parameters
Pad Properties Model Simulated Hardness Elastic Modulus Asperity Distribution Pad Thickness Roughness Poissons Ratio IC 1000 5.0 MPa 300 MPa Random Gaussian 1.3 mm 10 m 0.4

Wafer Properties Hardness Elastic Modulus Poissons Ratio 2.0 GPa 110 GPa 0.16

Slurry Properties Particle Material Particle Density Particle Size Distribution Mean Particle Radius Standard Deviation of Particle Radius Fluid Density Fluid Viscosity
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Silica 2000 kg / m3 Gaussian 70 m 15 m 1000 kg / m3 0.001 Pa - s


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Results: Interfacial slurry pressure

(Osorno, 2005) Experiments

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Results: Interfacial slurry pressure

Increasing from highly negative values

(Osorno, 2005) Experiments

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Results: Contact Stress on Pad

max = 800 KPa


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Results: Evolution of Wafer Wear Over Time

t=0

t>0

t = t1
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t = 2t1

t = 3t1
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Soft-EHL and Wear Modeling of CMP (wafer-scale)


Application: CMP

Virtual CMP
(Multiphysics fluid structure interaction (FSI) & Wear)

Wafer-scale mixed lubrication problem is being computed in silico. The evolution of wear, fluid pressure and contact stress is known.
Carnegie Mellon University Particle Flow & Tribology Laboratory

Soft-EHL and Wear Modeling of CMP (wafer-scale)


Application: CMP

Virtual CMP
(Multiphysics fluid structure interaction (FSI) & Wear)

Wafer-scale mixed lubrication problem is being computed in silico. The evolution of wear, fluid pressure and contact stress is known.
Carnegie Mellon University Particle Flow & Tribology Laboratory

Results: Material Removal Rate


MRR vs Normal Load

Experiments

Terrell and Higgs (2007) The model has excellent predictions for lower loads ( < 15 PSI), but then requires improved accuracy for higher loads.
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Breadth of Application

PAML lite
Extending to Industrial Scale Manufacturing 1. Oscillating wafer carrier 2. Multi-wafer carrier

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Oscillating Head
The wafer carrier oscillates to-and-fro with respect to the pad center

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Parametric Study: PAML-lite (non-Oscillating Wafer)


Hydrodynamic pressure and wafer wear with varying separation Increased separation Increased average pressure

Increased separation Reduced wear

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Parametric Study: PAML-lite (non-Oscillating Wafer)

The eccentricity (separation between the wafer and the pad axis of rotation clearly affects the polishing behavior)

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Oscillating Head
The wafer carrier oscillates to-and-fro with respect to the pad center

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Oscillating Head
The wafer carrier oscillates to-and-fro with respect to the pad center

GnP Poli 300 Polisher


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Oscillating Head
The wafer carrier oscillates to-and-fro with respect to the pad center

PAML-lite GnP Poli 300 Polisher

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Oscillating Head: Comparison with stationary head


Variation in MRR with increasing applied load

MRR vs Load for Carrier Oscillation


400 350 300 Non-oscillating Oscillating

MRR (nm/min)

250 200 150 100 50 0 0 2 4 6 8

Oscillation Amplitude: 0.15 m Frequency: 40 Hz

10 12 14 16 18 20

Load (PSI)
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Oscillating Head: Effect of oscillations


Variation in MRR with oscillation parameters

MRR vs Oscillation Amplitude


350 300 250

MRR vs Oscillation Angular Frequency


350 300 250

MRR (nm/min)
0 0.05 0.1 0.15 0.2 0.25

MRR (nm/min)

200 150 100 50 0

200 150 100 50 0

20

40

60

80

100

Amplitude (m)

Frequency (Hz)

Load : 6 PSI Angular Frequency : 60 Hz


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Load : 6 PSI Amplitude : 0.2 m


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Multi-wafer carriers

At the industrial scale, it is expensive to polish one wafer at a time Larger carriers are designed to hold multiple wafers to reduce power and slurry usage We observe motion at three places: velocity of the pad (P), velocity of the carrier (C) and the velocity of the wafer (W)

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Multi-wafer carriers: Pad and the Carrier


Individual Wafers on Pad Animation

Carrier on Pad (Equilibrium Animation)

Individual Wafer Wear Animation

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Multi-wafer carriers: Effect of Parameters

Normalized MRR vs Load (for multiple wafers)

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Conclusions

A new multiphysics framework, PAML lite was introduced that


coupled fluid mechanics, contact mechanics and abrasive wear

Wafer-scale phenomena are modeled Wafer scale defects can


be monitored

The flexibility of the model allows expansion to realistic polishing


systems Oscillating carrier and multi-wafer carrier

The expanded model can be used to monitor effects of untouched


parameters, to enhance efficiency
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THANK YOU

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APPENDIX

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