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Overview
Introduction and motivation Recap of PAML-lite
Model Expansions
Conclusion
Granular flows
Powder lubrication
One of the most difficult areas of tribology relates to the multi-physics behavior of particulate materials large or small. They can wear and damage relatively sliding materials, or they can be used to protect materials.
Slurry
Carnegie Mellon University Particle Flow & Tribology Laboratory
Motivation
Slurry
Wafer Pad
CMP, often results in defective output. To increase the yield and minimize waste, accurate modeling of CMP is required.
Carnegie Mellon University
Dishing only
Before CMP Copper Copper seed Tantalum Silicon Dioxide Silicon
Erosion only
Ideal CMP
Wafer curvature
Variation of mean material removal with wafer radius of curvature Tseng et al. (1999)
Preston (1927), Zhao and Shi ( ), Boning (1990s) Runnels (1994 ), Sundararajan and Thakurta (1994) Zhao and Chang (2002), Luo and Dornfeld (2001) Shan et al. (2000), Higgs et al. (2005), Jin et al. (2005)
Contact mechanics
Empirical Models
MRR = k PV H
Empirical Models
Runnels and Eyman (1994) Only load carrying capacity No wear modeling Sundararajan et al. (1999)
Carnegie Mellon University
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Ignored the effect of solid-solid contact between wafer and pad. Unable to capture the effect of using different abrasives and pads
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Attempt to modify the Preston's equation by calculating Preston's coefficient (k) based on known parameters. Ignored the effect of the slurry.
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(c) (d)
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Tribosurfaces
Wear
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Fluid hydrodynamics (3D Navier Stokes Equations) Contact mechanics (Winkler Elastic Foundation) Particle dynamics (Eulerian Lagrangian treatment) Wear (Abrasive wear due to spherical particles) Addresses asperity scale issues: dishing, erosion
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Computationally very expensive. Could only model very small domains, at a very slow computational speed.
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Objective
To develop an experimentally validated, computationally efficient framework, without sacrificing major physical phenomenon in action during CMP
PAML lite
(Computations: From Days to Minutes)
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Virtual CMP
PAML lite
Fluid Mechanics
Film thickness
h = h(r,)
Contact Mechanics
Separation
d = d(r,)
Particle Dynamics
Uniform Concentration Size distribution
Wear
Material Removal Rate MRR = f(,w,,V)
Hydrodynamic Pressure
p = p[h, , ]
Elastic Contact
= (z, F, E)
Active Particles
Nactive=f (G, , )
Equilibrium
Particle Indentation
= f (, Hw*, pd)
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o o
Number of active particles (Particles participating in the wear event) Average wear (Material removed by a particle with diameter equal to the average diameter of active particles)
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Fz,Mx, My = 0 YES Equilibrium orientation {,,}, p(r,), (r,) Calculate Active Particles
NO
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Compute new: ,,
Fz,Mx, My = 0 YES Equilibrium orientation {,,}, p(r,), (r,) Calculate Active Particles
NO Root Finder
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Modeling Parameters
Pad Properties Model Simulated Hardness Elastic Modulus Asperity Distribution Pad Thickness Roughness Poissons Ratio IC 1000 5.0 MPa 300 MPa Random Gaussian 1.3 mm 10 m 0.4
Wafer Properties Hardness Elastic Modulus Poissons Ratio 2.0 GPa 110 GPa 0.16
Slurry Properties Particle Material Particle Density Particle Size Distribution Mean Particle Radius Standard Deviation of Particle Radius Fluid Density Fluid Viscosity
Carnegie Mellon University
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t=0
t>0
t = t1
Carnegie Mellon University
t = 2t1
t = 3t1
Particle Flow & Tribology Laboratory
Virtual CMP
(Multiphysics fluid structure interaction (FSI) & Wear)
Wafer-scale mixed lubrication problem is being computed in silico. The evolution of wear, fluid pressure and contact stress is known.
Carnegie Mellon University Particle Flow & Tribology Laboratory
Virtual CMP
(Multiphysics fluid structure interaction (FSI) & Wear)
Wafer-scale mixed lubrication problem is being computed in silico. The evolution of wear, fluid pressure and contact stress is known.
Carnegie Mellon University Particle Flow & Tribology Laboratory
Experiments
Terrell and Higgs (2007) The model has excellent predictions for lower loads ( < 15 PSI), but then requires improved accuracy for higher loads.
Carnegie Mellon University
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Breadth of Application
PAML lite
Extending to Industrial Scale Manufacturing 1. Oscillating wafer carrier 2. Multi-wafer carrier
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Oscillating Head
The wafer carrier oscillates to-and-fro with respect to the pad center
commons.wikikmedia.org
The eccentricity (separation between the wafer and the pad axis of rotation clearly affects the polishing behavior)
Oscillating Head
The wafer carrier oscillates to-and-fro with respect to the pad center
commons.wikikmedia.org
Oscillating Head
The wafer carrier oscillates to-and-fro with respect to the pad center
Oscillating Head
The wafer carrier oscillates to-and-fro with respect to the pad center
MRR (nm/min)
10 12 14 16 18 20
Load (PSI)
Carnegie Mellon University Particle Flow & Tribology Laboratory
MRR (nm/min)
0 0.05 0.1 0.15 0.2 0.25
MRR (nm/min)
20
40
60
80
100
Amplitude (m)
Frequency (Hz)
Multi-wafer carriers
At the industrial scale, it is expensive to polish one wafer at a time Larger carriers are designed to hold multiple wafers to reduce power and slurry usage We observe motion at three places: velocity of the pad (P), velocity of the carrier (C) and the velocity of the wafer (W)
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Conclusions
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THANK YOU
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APPENDIX
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