Advanced Semiconductor Devices Lecture 7

Lecture outline
Review Approximations for regions of operation Surface potential model in moderate inversion MOS Capacitor MOS Capacitor in moderate inversion Accurate capacitance model in all regions of operation Surface potential and inversion charge Three-terminal MOS structure Quasi-Fermi potential

V. Ariel 2013 Advanced Semiconductor Devices

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Voltage and charge balance

Total charge in semiconductor body

V. Ariel 2013 Advanced Semiconductor Devices

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Regions of operation
Flatband

Accumulation

Depletion and inversion

V. Ariel 2013 Advanced Semiconductor Devices

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Solution for gate voltage

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Accumulation
Condition for charge accumulation

Approximate solution for charge accumulation

V. Ariel 2013 Advanced Semiconductor Devices

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Depletion

Condition for depletion Approximation for gate voltage in depletion

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Inversion

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Gate voltage and surface potential in inversion

V. Ariel 2013 Advanced Semiconductor Devices

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Weak inversion

V. Ariel 2013 Advanced Semiconductor Devices

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Weak inversion

On the border of moderate inversion

In weak inversion

V. Ariel 2013 Advanced Semiconductor Devices

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Weak inversion

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Strong inversion

V. Ariel 2013 Advanced Semiconductor Devices

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Moderate inversion

Need a simple solution for semiconductor charges and potentials in moderate inversion !!!

V. Ariel 2013 Advanced Semiconductor Devices

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Moderate and strong inversion

V. Ariel 2013 Advanced Semiconductor Devices

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Moderate inversion

V. Ariel 2013 Advanced Semiconductor Devices

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Approximation for surface potential in moderate and strong inversion

Obtained explicit approximation for the surface potential as a function of gate voltage in moderate and strong inversion regions!!!

V. Ariel 2013 Advanced Semiconductor Devices

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Moderate and strong inversion

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor

Need to differentiate a complex expression Instead, consider different regions of operation

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor in accumulation

Semiconductor charge capacitance exponentially increasing for large negative surface potential Therefore, in accumulation

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor in depletion

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor in depletion

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor in moderate and strong inversion

Use surface potential as a function of gate voltage in moderate and strong inversion regions

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor in moderate and strong inversion

Match with moderate and strong inversion

Match with depletion capacitance

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor in all regions of operation

At high frequency measurements observe depletion capacitance At low frequencies observe both depletion and inversion charges
V. Ariel 2013 Advanced Semiconductor Devices Lecture 7

MOS Capacitor approximation in depletion and inversion

There seems to be a problem on the border with weak inversion

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor in weak inversion

Need to account for both depletion charge and inversion charge in weak inversion

V. Ariel 2013 Advanced Semiconductor Devices

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MOS Capacitor approximation in all regions of inversion

Obtained approximation that seems to work in all regions of depletion and inversion Problem: surface potential as explicit function of gate voltage

V. Ariel 2013 Advanced Semiconductor Devices

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Surface potential

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Inversion Charge

V. Ariel 2013 Advanced Semiconductor Devices

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Three-terminal MOS structure

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Three-terminal MOS structure energy bands

V. Ariel 2013 Advanced Semiconductor Devices

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Three-terminal MOS structure - charges

V. Ariel 2013 Advanced Semiconductor Devices

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