FFAF30U60DN

FFAF30U60DN
Features
High voltage and high reliability High speed switching Low forward voltage

Applications
General purpose Switching mode power supply Free-wheeling diode for motor application Power switching circuits TO-3PF
1 2 3

1. Anode 2.Cathode 3. Anode

ULTRA FAST RECOVERY POWER RECTIFIER

Absolute Maximum Ratings
Symbol VRRM IF(AV) IFSM TJ, TSTG (per diode) TC=25C unless otherwise noted Value 600 @ TC = 100C 30 180 - 65 to +150 Units V A A C Parameter Peak Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature

Thermal Characteristics
Symbol RJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) T C =25 C unless otherwise noted Min. TC = 25 C TC = 100 C TC = 25 C TC = 100 C 1.0 Typ. Max. 2.3 2.1 A 15 150 90 8 360 ns A nC mJ Units V Value 0.8 Units C/W

Electrical Characteristics
Symbol V FM *

Parameter Maximum Instantaneous Forward Voltage IF = 30A IF = 30A Maximum Instantaneous Reverse Current @ rated VR Maximum Reverse Recovery Time Maximum Reverse Recovery Current Maximum Reverse Recovery Charge (IF =30A, di/dt = 200A/ s)

IRM *

trr Irr Qrr

WAVL Avalanche Energy * Pulse Test: Pulse Width=300s, Duty Cycle=2%

2000 Fairchild Semiconductor International

Rev. F, September 2000

FFAF30U60DN

Typical Characteristics
60 1000

Forward Current , IF [A]

10

TC = 100 C

[A]

100

TC = 100 C

10

Reverse Current , I

TC = 25 C
1

TC = 25 C
0.1

0.01

0.1 0.0

1E-3 0.5 1.0 1.5 2.0 2.5 3.0 100 200 300 400 500 600

Forward Voltage , VF [V]

Reverse Voltage , VR [V]

Figure 1. Typical Forward Voltage Drop vs. Forward Current

300 100

Figure 2. Typical Reverse Current vs. Reverse Voltage

Reverse Recovery Time , trr [ns]

Typical Capacitance at 0V = 278 pF

IF = 30A
90

TC = 25 C

Capacitance , Cj [pF]

200

80

70

100

60

50

0.1

10

100

40 100

500

Reverse Voltage , V R [V]

di/dt [A/s]

Figure 3. Typical Junction Capacitance

Figure 4. Typical Reverse Recovery Time vs. di/dt

50

Reverse Recovery Current , Irr [A]

14 12 10 8 6 4 2 0 100

IF = 30A o TC = 25 C

F(AV)

[A] Average Forward Current , I

16

40

30

C D

20

10

500

0 60

80

100

120
o

140

160

di/dt [A/s]

Case Temperature , TC [ C]

Figure 5. Typical Reverse Recovery Current vs. di/dt

2000 Fairchild Semiconductor International

Figure 6. Forward Current Derating Curve

Rev. F, September 2000

FFAF30U60DN

Package Dimensions

TO-3PF
5.50 0.20

4.50 0.20

15.50 0.20

3.60 0.20

3.00 0.20 (1.50)

10.00 0.20

10

26.50 0.20

23.00 0.20

16.50 0.20

14.50 0.20

0.85 0.03

16.50 0.20

2.00 0.20

14.80 0.20

2.00 0.20 2.00 0.20 4.00 0.20 0.75 0.10

+0.20

2.00 0.20

2.50 0.20

2.00 0.20

3.30 0.20

5.45TYP [5.45 0.30]

5.45TYP [5.45 0.30]

0.90 0.10

+0.20

3.30 0.20

2.00 0.20

5.50 0.20

1.50 0.20

Dimensions in Millimeters
Rev. F, September 2000

2000 Fairchild Semiconductor International

22.00 0.20

TRADEMARKS
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Preliminary

First Production

No Identification Needed

Full Production

Obsolete

Not In Production

This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

Rev. F1