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April 1998

FDP6030L / FDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features

These N-Channel logic level enhancement mode power 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V
field effect transistors are produced using Fairchild's RDS(ON) = 0.020 Ω @ VGS=4.5 V.
proprietary, high cell density, DMOS technology. This very Improved replacement for NDP6030L/NDB6030L.
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited Low gate charge (typical 34 nC).
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low Low Crss (typical 175 pF).
in-line power loss, and resistance to transients are needed. Fast switching speed.

_________________________________________________________________________________

Absolute Maximum Ratings T C = 25°C unless otherwise note


Symbol Parameter FDP6030L FDB6030L Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ±20 V
ID Drain Current - Continuous 52 A
- Pulsed 156
PD Maximum Power Dissipation @ TC = 25°C 75 W
Derate above 25°C 0.5 W/°C
TJ,TSTG Operating and Storage Temperature Range -65 to 175 °C
THERMAL CHARACTERISTICS
RθJC Thermal Resistance, Junction-to-Case 2 °C/W
RθJA Thermal Resistance, Junction-to-Ambient 62.5 °C/W

© 1998 Fairchild Semiconductor Corporation FDP6030L Rev.C1


Electrical Characteristics T C = 25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Unit


DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS Single Pulse Drain-Source Avalanche Energy VDD = 15 V, ID = 21 A 150 mJ
IAR Maximum Drain-Source Avalanche Current 21 A
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 37 mV/oC
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 1)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 3 V


∆VGS(th)/∆TJ
o
Gate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 C -4 mV/oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 26 A 0.0095 0.0135 Ω
TJ = 125°C 0.014 0.023
VGS = 4.5 V, ID = 21 A 0.015 0.02
ID(on) On-State Drain Current VGS = 10 V, VDS = 10 V 60 A
ID(on) On-State Drain Current VGS = 4.5 V, VDS = 10 V 15 A
gFS Forward Transconductance VDS = 10 V, ID = 26 A 37 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 1230 pF
f = 1.0 MHz
Coss Output Capacitance 640 pF
Crss Reverse Transfer Capacitance 175 pF
SWITCHING CHARACTERISTICS (Note 1)

tD(on) Turn - On Delay Time VDD = 15 V, ID = 52 A 7.6 15 nS

tr Turn - On Rise Time VGS = 10 V, RGEN = 24 Ω 150 210 nS

tD(off) Turn - Off Delay Time 29 46 nS

tf Turn - Off Fall Time 17 27 nS

Qg Total Gate Charge VDS= 12 V 34 46 nC


ID = 26 A, VGS = 10 V
Qgs Gate-Source Charge 6 nC
Qgd Gate-Drain Charge 8 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
IS Maximum Continuos Drain-Source Diode Forward Current 52 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 26 A (Note 1) 0.91 1.3 V
TJ = 125°C 0.8 1.2
Note
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.

FDP6030L Rev.C1
Typical Electrical Characteristics

100 3
VGS = 10V 5.5

DRAIN-SOURCE ON-RESISTANCE
ID , DRAIN-SOURCE CURRENT (A)

7.0 5.0
80 2.5 V GS =3.5V
6.0

R DS(ON) , NORMALIZED
4.5 4.0
60 2
4.5
4.0
40 1.5 5.0
5.5
6.0
3.5 7.0
20 10
1
3.0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.5
0 20 40 60 80 100
VDS , DRAIN-SOURCE VOLTAGE (V)
I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with


Drain Current and Gate
Voltage.

1.8 0.05
I D = 26A ID = 26A
DRAIN-SOURCE ON-RESISTANCE

1.6 V GS = 10V R DS(ON) , ON-RESISTANCE (OHM)


R DS(ON) ,NORMALIZED

0.04

1.4
0.03
1.2

0.02 TA = 125°C
1

0.8 0.01
25°C

0.6
-50 -25 0 25 50 75 100 125 150 175 0
2 4 6 8 10
TJ , JUNCTION TEMPERATURE (°C)
VGS , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation


Figure 4. On-Resistance Variation with
with Temperature.
Gate-to-Source Voltage.

60 60
VGS =0V
I S , REVERSE DRAIN CURRENT (A)

VDS = 10V TA = -55°C


25°C 10
50
I D , DRAIN CURRENT (A)

125°C
TA= 125°C
40 1
25°C
30 0.1
-55°C
20 0.01

10 0.001

0
1 2 3 4 5 0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS , GATE TO SOURCE VOLTAGE (V)
V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6 . Body Diode Forward Voltage


Variation with Source Current
and Temperature.

FDP6030L Rev.C1
Typical Electrical Characteristics (continued)

4000
10
VGS , GATE-SOURCE VOLTAGE (V)

I D = 26A
VDS = 6.0V 2000
8 12V

CAPACITANCE (pF)
24V Ciss
6
800
Coss
4

300
2
f = 1 MHz
Crss
VGS = 0V
0 100
0 10 20 30 40 0.1 0.3 1 3 10 30
Qg , GATE CHARGE (nC) VDS , DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

300 3000
200 it
Lim 10µ
s
100 (ON
)
100 2500 SINGLE PULSE
R DS
I D , DRAIN CURRENT (A)

µs R θJC = 2 °C/W
50 1ms POWER (W) 2000 TC = 25°C
20 10
ms
100 1500
10 m
DC s
5 VGS = 10V 1000
SINGLE PULSE
2 RθJC = 2 o C/W
500
1 TC = 25 °C

0.5 0
0.5 1 3 5 10 20 30 50 0.01 0.1 1 10 100 1,000
V DS , DRAIN-SOURCE VOLTAGE (V)) SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
0.5
r(t), NORMALIZED EFFECTIVE

0.3 R θ JC (t) = r(t) * RθJC


0.2
0.2 R θJC = 2.0 °C/W
0.1
0.1
0.05 P(pk)

0.05 t1
0.02
t2
0.03
0.01 TJ - TC = P * RθJC (t)
0.02
Single Pulse
Duty Cycle, D = t1 /t2
0.01
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
t 1 ,TIME (ms)

Figure 11. Transient Thermal Response Curve.

FDP6030L Rev.C1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST  OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench  SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER  UltraFET 
STAR*POWER is used under license
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DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
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with instructions for use provided in the labeling, can be effectiveness.
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user.
PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. H4