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FDP6030L / FDB6030L
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features
These N-Channel logic level enhancement mode power 52 A, 30 V. RDS(ON) = 0.0135 Ω @ VGS=10 V
field effect transistors are produced using Fairchild's RDS(ON) = 0.020 Ω @ VGS=4.5 V.
proprietary, high cell density, DMOS technology. This very Improved replacement for NDP6030L/NDB6030L.
high density process is especially tailored to minimize
on-state resistance. These devices are particularly suited Low gate charge (typical 34 nC).
for low voltage applications such as DC/DC converters and
high efficiency switching circuits where fast switching, low Low Crss (typical 175 pF).
in-line power loss, and resistance to transients are needed. Fast switching speed.
_________________________________________________________________________________
FDP6030L Rev.C1
Typical Electrical Characteristics
100 3
VGS = 10V 5.5
DRAIN-SOURCE ON-RESISTANCE
ID , DRAIN-SOURCE CURRENT (A)
7.0 5.0
80 2.5 V GS =3.5V
6.0
R DS(ON) , NORMALIZED
4.5 4.0
60 2
4.5
4.0
40 1.5 5.0
5.5
6.0
3.5 7.0
20 10
1
3.0
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 0.5
0 20 40 60 80 100
VDS , DRAIN-SOURCE VOLTAGE (V)
I D , DRAIN CURRENT (A)
1.8 0.05
I D = 26A ID = 26A
DRAIN-SOURCE ON-RESISTANCE
0.04
1.4
0.03
1.2
0.02 TA = 125°C
1
0.8 0.01
25°C
0.6
-50 -25 0 25 50 75 100 125 150 175 0
2 4 6 8 10
TJ , JUNCTION TEMPERATURE (°C)
VGS , GATE TO SOURCE VOLTAGE (V)
60 60
VGS =0V
I S , REVERSE DRAIN CURRENT (A)
125°C
TA= 125°C
40 1
25°C
30 0.1
-55°C
20 0.01
10 0.001
0
1 2 3 4 5 0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS , GATE TO SOURCE VOLTAGE (V)
V SD , BODY DIODE FORWARD VOLTAGE (V)
FDP6030L Rev.C1
Typical Electrical Characteristics (continued)
4000
10
VGS , GATE-SOURCE VOLTAGE (V)
I D = 26A
VDS = 6.0V 2000
8 12V
CAPACITANCE (pF)
24V Ciss
6
800
Coss
4
300
2
f = 1 MHz
Crss
VGS = 0V
0 100
0 10 20 30 40 0.1 0.3 1 3 10 30
Qg , GATE CHARGE (nC) VDS , DRAIN TO SOURCE VOLTAGE (V)
300 3000
200 it
Lim 10µ
s
100 (ON
)
100 2500 SINGLE PULSE
R DS
I D , DRAIN CURRENT (A)
µs R θJC = 2 °C/W
50 1ms POWER (W) 2000 TC = 25°C
20 10
ms
100 1500
10 m
DC s
5 VGS = 10V 1000
SINGLE PULSE
2 RθJC = 2 o C/W
500
1 TC = 25 °C
0.5 0
0.5 1 3 5 10 20 30 50 0.01 0.1 1 10 100 1,000
V DS , DRAIN-SOURCE VOLTAGE (V)) SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.
1
TRANSIENT THERMAL RESISTANCE
D = 0.5
0.5
r(t), NORMALIZED EFFECTIVE
0.05 t1
0.02
t2
0.03
0.01 TJ - TC = P * RθJC (t)
0.02
Single Pulse
Duty Cycle, D = t1 /t2
0.01
0.01 0.05 0.1 0.5 1 5 10 50 100 500 1000
t 1 ,TIME (ms)
FDP6030L Rev.C1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™ FAST OPTOLOGIC™ SMART START™ VCX™
Bottomless™ FASTr™ OPTOPLANAR™ STAR*POWER™
CoolFET™ FRFET™ PACMAN™ Stealth™
CROSSVOLT™ GlobalOptoisolator™ POP™ SuperSOT™-3
DenseTrench™ GTO™ Power247™ SuperSOT™-6
DOME™ HiSeC™ PowerTrench SuperSOT™-8
EcoSPARK™ ISOPLANAR™ QFET™ SyncFET™
E2CMOSTM LittleFET™ QS™ TinyLogic™
EnSignaTM MicroFET™ QT Optoelectronics™ TruTranslation™
FACT™ MicroPak™ Quiet Series™ UHC™
FACT Quiet Series™ MICROWIRE™ SILENT SWITCHER UltraFET
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. H4