Tunneling Magnetoresistance(TMR)

Gokaran Shukla

Layout

Introduction Physical Models Role of insulating oxide in TMR Analysis of ZnO GaN, AlN as Tunnel Barrier

12

10

8 Column 1 Column 2 Column 3

0 Row 1 Row 2 Row 3 Row 4

Jullier Model

Model : Short coming: Independence from geometry and the electronic structure of barrier layer Sign of P

M. Julliere, Phys. Lett. 54A, 225 (1975)

Slonczewski's Model

Butler et.al PRB 56, 11827 (1997)

Butler Model

Model count Geometery and electronics structure of both Ferromagnet & insulating barrier Its also count curvature effect of wave function

Butler et.al PRB 56, 11827 (1997)

Wave function Symmetry

Example

Example

Role of Insulating Oxide

Role of Insulating Oxide

JOURNAL OF APPLIED PHYSICS 102, 083710 2007

Role of Insulating Oxide

Characteristic features about Insulator Oxide

Insulator barrier height Insulator barrier width(thickness) Crystalinity of the barrier material Electronic structure of the barrier

Physics behind TMR

Orientation of both Ferromagnetic Electrode Insulator barrier height, barrier thickness, crystalinity and elctronic structure of electrode as well as barrier material.

Why ZnO GaN AlN ?

ZnO is a ferroelectric material, and this material is the backbone of Display industries. Although ZnO has a smaller band gap than MgO/Al2O3 but the presensce of spontaneous polarization could assist in spin filtering and thus direct spin injection could be possible in ZnO Blue LED and Blue Laser based on the GaN/AlN . So, spin polarized light could possible by direct spin injection in these material.

Analysis of ZnO as Tunnel Barrier

Complex Band

Co & Fe Band

GaN as a Tunnel Barrier

AlN Transport

AlN complex band

Co|ZnO|Co Structure Stability Analysis

Structure 7 Layer of ZnO Co_Vacant Co_Oxygen Co_Zinc 3 Layer of ZnO Co_Vacant Co_Oxygen Co_Zinc -61162.603546 0.035568 99.44513085 -93396.344897 -93393.126235 -93393.126115 0.048247 0.029384 0.029484 62.99910693 97.49865198 97.40007053 TotalEnergy(eV) Max Force (eV/A) Pressure(KBar)

Conclusion

Discussed about TMR principle. ZnO GaN AlN as a tunnel barier for spin filtering with major goal is to direct spin injection in these materials. It seems that Co would prefer vacant site rather than Oxygen/Zinc. This is very opposite from Fe|MgO|Fe case where Fe is on top of Oxygen. A proper electrode material need to be look which fulfill the desire for GaN and AlN

Thanks for your kind Attention