Physics 789 Due October 19, 2010

Problem Set 7 Name: Nikhil Modi

1. p-n junction. A p-n junction is formed by diffusing boron from a thin doped-Si surface layer (model as concentration = 1019cm3, depth = 2 nm) into n-type silicon doped at 1017 cm3 by thermal annealing at temperature T=1100C and time duration t=10 s. a. Calculate the junction depth, xJ. b. Calculate the increase/decrease in xJ corresponding to a +/ 10C change in T. c. Calculate the increase/decrease in xJ corresponding to a +/ 1s change in t. Solution: Since the thickness of the predeposition is small, the diffusion profile can be approximated to be a Gaussian, and an erfc profile is not expected. Also, for a first order approximation, any concentration effects on diffusion can be neglected because ni is not significantly lower than the concentration of the dopant; it is almost the same. ni = 3.1 * 1016 * T3/2 * e-0.603/kT = 9.65 x 1018 cm-3 1019 cm-3 Equation 1.4 in text a. Junction depth (xj) is considered to be the distance from the surface to the point where the doping concentration and the background doping of the wafer is the same. Making appropriate changes to the expression for the Gaussian profile, the following expression can be used to calculate xj. ( ) ( ) Equation 7.15 in text ( ) ( )

The diffusivity of Boron at 1100C can be obtained from figures 7-15 or 7-16. It can also be obtained by using the prefactor and activation energy listed in Table 7-3 and the Arrhenius expression for diffusivity, D0e-Ea/kT. The value of D at the same temperature has also been used in a text book example (pg 390-391); the number 1.5 * 10-13 cm2/s has been taken from there. Using t = 10 s, CS = 1019 cm-3, and CB = 1017 cm-3, the calculated value of xj is 52.6 nm. Starting with a thickness of 2 nm, an anneal at 1100C can diffuse dopants to > 50 nm in very short 10 seconds! This highlights the precision required in high temperature thermal processes needed for S/D formation and activation. b. A change in temperature corresponds to a change in the diffusivity term in the expression for junction depth (above). Calculated values for diffusivity at different temperatures, and corresponding junction depths are shown below for a 10 second anneal. Temperature (K) 1363 (10C) 1373 (1100C) 1383 (+10C) Diffusivity (cm2/s) 1.14295587 * 10-13 1.42000538 * 10-13 1.75868227 * 10-13 Junction depth (nm) 45.85 51.14 56.92 Change in xj (nm) 5.29 +5.78

c. A change in annealing time corresponds to a change in the t0.5 term in the expression for junction depth; calculated values are shown below for a 1100C anneal. Time (s) 9 10 11 Junction depth (nm) 48.52 51.14 53.64 Change in xj (nm) 2.62 +2.5

These variations are relatively dramatic in the case of S/D junctions; the series resistance (and therefore, drive current) of the device can change beyond requirements if the thermal process is not precisely controlled.

2. Dopant diffusion at solid solubility. Calculate the effective diffusion lengths xD = (4Defft) for B, P, and As at concentrations in silicon equal to their respective solid solubilities at T = 1100C and for t = 1s. Solution: The intrinsic carrier concentration of Si at 1100C is 9.65 * 1018 cm-3(from equation 1.4 in text book), well under the solid solubility limits of B, P, and As at that temperature. Concentration dependent effects need to be included in the determination of effective diffusivity. Diffusion is faster at high concentrations, besides being proportional to concentration gradient, effectively modeled by modifying (increasing in value) the diffusivity term at high concentrations. In addition to the concentration effect, an electric field effect would have to be considered for numerical concentration profiling (ignored here).

Dopant

Boron

Phosphorus

Arsenic

Diffusivity values (D.0 in cm2/s D.E in eV) DO.0 = 0.05 DO.E = 3.5 D+.0 = 0.95 D+.E = 3.5 DO.0 = 3.85 DO.E = 3.66 D.0 = 4.44 D.E = 4.0 D=.0 = 44.2 D=.E = 4.37 DO.0 = 0.011 DO.E = 3.44 D.0 = 31.0 D.E = 4.15

Effective Diffusivity (Expression and Value)

Effective Diffusion Length xD = (4Defft) ( )] 37.43 nm

Deff = 3.502 * 10-12 cm2/s [ [ Deff = 6.877 * 10-11 cm2/s [ ] [ ( )] 38.75 nm ] [ ( ) ] ( )] 165.86 nm

Deff = 3.754 * 10-12 cm2/s