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Product specification
BSP100
SYMBOL
d
GENERAL DESCRIPTION
N-channel enhancement mode field-effect transistor in a plastic envelope using trench technology. Applications: Motor and relay drivers d.c. to d.c. converters Logic level translator The BSP100 is supplied in the SOT223 surface mounting package.
PINNING
PIN 1 2 3 4 gate drain source drain (tab) DESCRIPTION
SOT223
4
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
DM
PD Tj, Tstg
Pulsed drain current Total power dissipation Operating junction and storage temperature
Tsp = 25 C Tsp = 25 C
- 65
24 8.3 150
A W C
THERMAL RESISTANCES
SYMBOL Rth j-sp Rth j-amb PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient CONDITIONS surface mounted, FR4 board surface mounted, FR4 board TYP. 12 70 MAX. 15 UNIT K/W K/W
Philips Semiconductors
Product specification
BSP100
MAX. 23 6
UNIT mJ A
ELECTRICAL CHARACTERISTICS
Tj= 25C unless otherwise specified SYMBOL PARAMETER V(BR)DSS VGS(TO) RDS(ON) gfs ID(ON) IDSS IGSS Qg(tot) Qgs Qgd td on tr td off tf Ld Ls Ciss Coss Crss Drain-source breakdown voltage Gate threshold voltage Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 10 A; Tj = -55C VDS = VGS; ID = 1 mA Tj = 150C Tj = -55C VGS = 10 V; ID = 2.2 A VGS = 4.5 V; ID = 1 A VGS = 10 V; ID = 2.2 A; Tj = 150C Forward transconductance VDS = 20 V; ID = 2.2 A On-state drain current VGS = 10 V; VDS = 1 V; VGS = 4.5 V; VDS = 5 V Zero gate voltage drain VDS = 24 V; VGS = 0 V; current VDS = 24 V; VGS = 0 V; Tj = 150C Gate source leakage current VGS = 20 V; VDS = 0 V Total gate charge Gate-source charge Gate-drain (Miller) charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance Input capacitance Output capacitance Feedback capacitance ID = 2.3 A; VDD = 15 V; VGS = 10 V MIN. 30 27 1 0.4 2 3.5 2 TYP. MAX. UNIT 2 80 120 4.5 10 0.6 10 6 0.7 0.7 6 8 21 15 2.5 5 250 88 54 2.8 3.2 100 200 170 100 10 100 V V V V V m m m S A A nA A nA nC nC nC ns ns ns ns nH nH pF pF pF
VDD = 20 V; RD = 18 ; VGS = 10 V; RG = 6 Resistive load Measured tab to centre of die Measured from source lead to source bond pad VGS = 0 V; VDS = 20 V; f = 1 MHz
February 1999
Rev 1.000
Philips Semiconductors
Product specification
BSP100
PD%
0.1
20
40
60
80 Tsp / C
100
120
140
100
Fig.3. Safe operating area. Tsp = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp
ID%
10
D = 0.5 0.2
0.1
0.01 1E-06
1E-05
1E-04
20
40
60
80 100 Tsp / C
120
140
Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Tsp); conditions: VGS 10 V
February 1999
Rev 1.000
Philips Semiconductors
Product specification
BSP100
1E-01
Sub-Threshold Conduction
10 9
8 7 6 5 4 Tj = 25 C 3 2 1 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5
1E-03
150 C
1E-04
1E-05
1E-06
tp ID
0.1 1E-06
1E-05
1E-03
1E-02
Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
Fig.15. Maximum permissible non-repetitive avalanche current (IAS) versus avalanche time (tp); unclamped inductive load
10
February 1999
Rev 1.000
Philips Semiconductors
Product specification
BSP100
Dimensions in mm.
36
18
60 9 4.6 4.5
10
7 15 50
Fig.16. PCB for thermal resistance and power rating for SOT223. PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 m thick).
February 1999
Rev 1.000
Philips Semiconductors
Product specification
BSP100
c y HE b1 v M A
Q A A1
1
e1 e
2
bp
3
w M B detail X
Lp
2 scale
4 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 1.8 1.5 A1 0.10 0.01 bp 0.80 0.60 b1 3.1 2.9 c 0.32 0.22 D 6.7 6.3 E 3.7 3.3 e 4.6 e1 2.3 HE 7.3 6.7 Lp 1.1 0.7 Q 0.95 0.85 v 0.2 w 0.1 y 0.1
EUROPEAN PROJECTION
February 1999
Rev 1.000
Philips Semiconductors
Product specification
BSP100
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
February 1999
Rev 1.000
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