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    Charly Gomez
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    MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT. High power switching applications l High input impedance l High speed : tf = 0.5us (max) l Low saturation voltage : VCE (sat) = 4.0V (max) the electrodes are isolated from case Unit: mm Equivalent Circuit Forward current Collector power dissipation (Tc = 25degC) Junction temperature Storage temperature range Isolation

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    MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT. High power switching applications l High input impedance l High speed : tf = 0.5us (max) l Low saturation voltage : VCE (sat) = 4.0V (max) the electrodes are isolated from case Unit: mm Equivalent Circuit Forward current Collector power dissipation (Tc = 25degC) Junction temperature Storage temperature range Isolation

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    82 views7 pages

    IGBT

    Uploaded by

    Charly Gomez
    MG200Q2YS40 TOSHIBA GTR Module Silicon N Channel IGBT. High power switching applications l High input impedance l High speed : tf = 0.5us (max) l Low saturation voltage : VCE (sat) = 4.0V (max) the electrodes are isolated from case Unit: mm Equivalent Circuit Forward current Collector power dissipation (Tc = 25degC) Junction temperature Storage temperature range Isolation

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    MG200Q2YS40

    TOSHIBA GTR Module Silicon N Channel IGBT

    MG200Q2YS40
    High Power Switching Applications Motor Control Applications
    l High input impedance l High speed : tf = 0.5s (max) trr = 0.5s (max) l Low saturation voltage : VCE (sat) = 4.0V (max) l Enhancement-mode l The electrodes are isolated from case Unit: mm

    Equivalent Circuit

    JEDEC JEITA TOSHIBA Weight: 430g (typ.)

    2-109C1A

    Maximum Ratings (Ta = 25C)


    Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Rating 1200 20 200 400 200 400 1300 150 40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V A

    Forward current

    A W C C V Nm

    Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting)

    2001-08-16

    MG200Q2YS40
    Electrical Characteristics (Ta = 25C)
    Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j-c) IF = 200A, VGE = 0 IF = 200A, VGE = 10V di / dt = 300A / s Transistor Diode Test Condition VGE = 20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 200mA ,VCE = 5V IC = 200A, VGE = 15V VCE = 10V, VGE = 0, f = 1MHz Min 3.0 Typ. 3.0 24000 0.3 0.4 0.2 0.8 2.0 0.25 Max 20 2.0 6.0 4.0 0.6 0.8 0.5 1.5 3.0 0.5 0.096 0.25 V s C / W s Unit A mA V V pF

    2001-08-16

    MG200Q2YS40

    2001-08-16

    MG200Q2YS40

    2001-08-16

    MG200Q2YS40

    2001-08-16

    MG200Q2YS40

    RESTRICTIONS ON PRODUCT USE

    000707EAA

    TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the Handling Guide for Semiconductor Devices, or TOSHIBA Semiconductor Reliability Handbook etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (Unintended Usage). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customers own risk. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. The information contained herein is subject to change without notice.

    2001-08-16

    This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.

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