EDC Manual EC 3RD SEM GGCT PDF

Gyan Ganga College of Technology, Jabalpur
3
rd
Semester EC Subject : Electronics Devices Page 1

INDEX

S. No.
Experiment Name Date Remark
1 To plot the V-I characteristics of the P-N
Junction Diode

2 To plot the V-I characteristics of the
Zener Diode

3 To study the operation of transistor as an
amplifier

4 To plot the input output characteristics of
the CE transistor.

the CB transistor.

the CC transistor.

7 To plot the response of Half wave and full
wave rectifier.

the power MOSFET.

9 To plot the VI characteristics of the
silicon controlled rectifier

10 To verify the transfer characteristics and
output characteristics of Field Effect
Transistor (FET)


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EXPERIMENT NO.1

AIM: To study forward & reverse characteristics of Silicon junction diode.

APPRATUS REQUIRED: Trainer kit, connecting wires

THEORY: Semiconductor P-N junction diode is practically unidirectional, device having
more conduction in one direction and negligible conduction in opposite direction.

When P-N junction is formed, potential barrier is developed across the junction due to the
diffusion of majority carriers & that opposes further transition of electrons and holes across
the junction.

Now if external potential difference is applied across the junction sot hat P end is connected
to +ve terminal of the external dc supply, it will oppose the junction potential barrier and
when external potential difference, just balance the junction potential difference, now it
becomes easy for electron and hole to move toward the junction and cross the junction.

Thus with further increase in external potential difference, more & more electrons and holes
will cross the junction and contribute towards external current in circuit. Hence diode
conducts and it is referred as forward bias.

If polarity of external supply is reversed so that P end is connected to ve terminal of the
external supply, it will assist the junction potential difference and width of depletion layer
will further increase making it still difficult for electrons and holes to cross the junction.
Hence diode will conduct & it is referred as reverse bias.

However due to majority carriers very small current of the order of few A forge and nA for
Si when diode is reversed bias. But as compare to forward current which is of the order of
few mA practically we can neglect the reverse current & p-n junction diode may be treated as
unidirectional device.

Semiconductor used for the manufacturing of p-n junction diode may be Si. The basic
difference between Si & Ge is that energy band gap is 1.1ev for Si and 0.72ev for Ge at room
temperature. Both Si & Ge diode are commercially available.

A number of differences between these two types are relevant in design. A note worthy
feature of V-I characteristic is that there exist cut in or threshold voltage Vt below which the
current is very small. Beyond Vt the current rises very rapidly. It is found that Vt is
approximately 0.3v for Ge or 0.6v for Si.

In the reverse bias condition value of reverse saturation current for Si is in nA & For Ge is in
A.


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PROCEDURE: Trainer Kit Diagram

(A) FORWARD CHARACTERISTIC:-
1. For plotting the forward characteristics first move the switch S to the 1V.
2. For plotting the characteristics of the silicon we connect the terminal C with
the F terminal of Si diode for Ge to the F of the Ge.
3. Also connect the terminal E with the D terminal now the diode is in forward
biased junction now to measure the value of voltage connect the A and B
terminal with the voltmeters terminal.
4. To measure the value of the current connects the terminal A and C with the
ammeters terminal.
5. Now vary the value of voltage by using knob K and measure the
corresponding current using ammeter.
6. Take at least 5 readings and plot the characteristics accordingly.

(B) REVERSE CHARACTERISTIC:-
1. For plotting the reverse characteristics first move the switch S to the 10V.
2. For plotting the characteristics of the silicon we connect the terminal C with
the E terminal of Si diode for Ge to the E of the Ge.
3. Also connect the terminal F with the D terminal now the diode is in reverse
bias condition now to measure the value of voltage connects the A and B
terminal with the voltmeters terminal.
4. To measure the value of the current connects the terminal A and C with the
ammeters terminal.
5. Now vary the value of voltage by using knob K and measure the
corresponding current using ammeter.
6. Take at 5 readings and plot the characteristics accordingly

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Forward Bias

Reverse Bias

OBSERVATION TABLE (for Si):-

S. No. Forward Bias Reverse Bias
V
F
( Volts ) I
F
(mA) V
R
( Volts ) I
R
(uA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.


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V-I CHARACTERISTICS :-

RESULT & CONCLUSION: - From V-I characteristic of diode it is observed that, diode
conducts, when it is forward bias. Current increase rapidly with forward voltage. However there is cut
in voltage below which there is no conduction. In reverse bias, reverse saturation current of diode is
very small, of the order of few uA.
This diode can be used as a unidirectional device which finds important application as
rectifier. It is observed from the comparison of V-I characteristic of Si & Ge diode that cut in voltage
for Ge diode is smaller than cut in voltage for Si diode & forward current for Ge diode is larger for
same forward voltage.
Reverse saturation current in Ge diode is also higher than the reverse saturation
current in Si diode of comparable ratings.


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Viva Questions

1. Why silicon is preferred over germanium in the construction of diode ?
2. What is the effect of temperature on the diode ?
3. Explain the following terms: (a) static resistance
(b) bulk resistance
(c) junction resistance
(d) a.c. or dynamic resistance
(e) reverse resistance of diode

4. What are the applications of a diode?
5 What is the diode current equation?
6. What is the difference between Drift current and Diffusion current?
7. What is reverse saturation current ?
8. What is reverse recovery time?
9. Draw the symbols of all types of diodes?
10. What is the difference between zener breakdown & avalanche
breakdown?


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EXPERIMENT NO.2

OBJECTIVE: To plot the V-I characteristics of Zener diode

APPARATUS REQUIRED: Zener diode trainer kit, connecting wires.

THEORY: P-N junction diode is a unidirectional device .It conducts in forward direction,
but when it is reverse bias it does not conduct ideally .However if we go on increasing the
value of reverse bias voltage a stage is reached when the diode breaks down and the current
starts increasing suddenly with the constant voltage. This breakdown takes place because of
two reasons:
1. The minority carriers, under reverse bias condition flowing through the junction
acquire a kinetic energy which increases with the increase in reverse voltage. At a
sufficiently high reverse voltage (say 5V); the kinetic energy of minority carriers
becomes so large that they knock out electrons from the covalent bonds of the
semiconductor material. This phenomenon of the breakdown is termed as Avalanche
Breakdown.
2. Under a very high reverse voltage. The depletion region expands and the potential
barrier increases leading to a very high electric field across the junction .the electric
field will break some of the covalent bonds of the semiconductor atoms leading to a
large number of minority carriers, which suddenly increases the reverse current. This
type of breakdown is termed as zener breakdown.

By controlling impurity concentration at the time of manufacturing the diode can be
fabricated to breakdown at the predetermined exact potential. This can be used in the
voltage regulation.

PROCEDURE: Trainer Kit diagram


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Forward characteristics:
1. For plotting the forward characteristics connect the point C with the F point and Point
D with the E point using connecting wires and move the switch S to 1V.
2. Connect point A with the white terminal adjacent to voltmeter and point B with the
black terminal using connecting wires.
3. Also connect the point A with the white dot and the point C with the black terminal
adjacent to ammeter.
4. Take the different readings of if corresponding to the different values of V and Plot
the graph.

Reverse characteristics:
1. For plotting the reverse characteristics connect the point C with the E point and point
with the F point using connecting wires and move the switch S to the 10V.
2. Connect point A with the white terminal adjacent to voltmeter and point B with the
black terminal using connecting wires.
3. Also connect the point A with the white dot and the point C with the black terminal
adjacent to ammeter.
4. Vary the value of reverse voltage with the help of knob K till you get the sudden
increase in the Ir with the constant voltage value and plot the graph.


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OBSERVATION TABLE:-

S. No. Forward Bias Reverse Bias
V
F
( Volts ) I
F
(mA) V
R
( Volts ) I
R
(uA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.

RESULT: The theoretical V-I characteristics is verified practically.


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Viva Questions

1. Draw the zener diode equivalent circuit?
2. What are the applications of zener diode?
3. What is the difference between zener diode & general diode?
4. What is the difference between zener break down & avalanche break down?
5. Explain the working of zener diode as a regulator?


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EXPERIMENT NO.3

AIM: To study the operation of transistor as an amplifier.
TOOLS REQUIRED: TINA Pro software.
THEORY:
Generally, an amplifier or simply amp is any device that changes, usually increases, the amplitude
of a signal. The relationship of the input to the output of an amplifierusually expressed as a
function of the input frequencyis called the transfer function of the amplifier, and the magnitude
of the transfer function is termed the gain.

A transistor is a semiconductor device used to amplify and switch electronic signals. The
common-emitter amplifier is designed so that a small change in voltage in (V
in
) changes the small
current through the base of the transistor and the transistor's current amplification combined with
the properties of the circuit mean that small swings in V
IN
produce large changes in V
out
. Various
configurations of single transistor amplifier are possible, with some providing current gain, some
voltage gain, and some both.

The BASIC TRANSISTOR AMPLIFIER amplifies by producing a large change in collector
current for a small change in base current. This action results in voltage amplification because the
load resistor placed in series with the collector reacts to these large changes in collector current
which, in turn, results in large variations in the output voltage.

Calculation-

RESULT:


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Viva Questions
Q.1. What is an amplifier? How transistor can be used as an amplifier and a
Switch?
Q.2. Explain how transistor amplifies the input signal?
Q.3. Which operating mode is best suited for amplification purpose? Why Common Emitter
configuration produces an output with 180 degree phase shift w.r.t. input?
Q4. Discuss various configuration used in BJT.
Q5. Explain difference between BJT and JFET.


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EXPERIMENT NO. 4

OBJECTIVE: - To study the input and output characteristics of a CE Transistor

APPARATUS REQUIRED: Transistor characteristics trainer kit, connecting wires

THEORY: As the name suggest the transistor is a device which transfers the resistance. It is
three terminal semiconductor devices with two junctions, consisting of three different doped
semiconducting regions called emitter, base and collector. The doping is heavy in the emitter
region and is light in the base region, while it is only moderate in the collector region. Area of
cross section of emitter is lower than collector but higher than base. The base region of the
transistor is invariably thin.
There are two types of junction transistors:
PNP
NPN

Working principle of transistor: In the transistor collector base junction is always reverse
biased. Naturally small current flows through the diode circuit. Current in this circuit can be
increased by forward biasing the emitter base junction .When the emitter base junction is
forward biased , heavily doped emitter ejects large number of majority carriers into the base
region . These carriers diffuse through the base region and enter into the collector region,
constituting an increasing current in the collector circuit of the transistor. But base being thin
and lightly doped, few of the majority carriers ejected into it. This constitutes the base
current. Thus most of the majority carriers ejected into the base region diffuse into the
collector region. Thus the collector current is almost equal to the emitter current.
Thus Emitter current (I
E
) = Collector current(I
C
) + Base current (I
B
)

Configuration of transistor: Following are the main types of transistor configuration:
Common emitter (CE): In this type of configuration the emitter terminal is common
between input and output circuit.
Common collector (CC): In this type of configuration the collector terminal is
common between input and output circuit.
Common base (CB): In this type of configuration the base terminal is common
between input and output circuit.

Input output characteristics of the Common Emitter Configuration: The input output
characteristics of any type of circuit shows its application area and also its operating
conditions. The input characteristics of any transistor decides its working at the input,
similarly the output characteristics decides its working at the output.

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Input characteristics

Output characteristics


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PROCEDURE: Trainer kit diagram

Input characteristics:
1. Firstly connect the C and D point with a single connecting wire and make it short
circuit.
2. Then set V
ce
to a proper value say 1V by connecting the point F with white terminal
adjacent to voltmeter and point G with black terminal using connecting wires and
adjusting the knob K2.
3. After setting the Vice remove the connecting wire from voltmeter and let the knob K2
as it is.
4. Next connect point A with the white terminal of voltmeter and point H with the black
terminal to set the value of Vibe by using knob K1.
5. To see the value of Ib corresponding to Vbe connect point A with the white terminal
of ammeter and point B with the black terminal.
6. Plot the graph between different values of Ib and Vbe for the different values of Vce.

Output characteristics:

1. Firstly set the proper value of Ib current by connecting point A to white terminal
adjacent to ammeter and point B to the black terminal and adjusting the knob K1.
2. Then remove the connecting wires and leave K2 as it is.
3. Connect the point C with the black terminal and point D with the white to get the
value of Ic.
4. Connect the point F with the black terminal and point G with the white terminal to
get the value of Vce.
5. Plot the graph between Ic and Vce different values to get the output characteristics.


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OBSERVATION TABLE:

S. No. Vce = 0V Vce = 1V Vce = 5V
V
be
(volts) I
b
(A) V
be
(volts) I
b
(A) V
be
(volts) I
b
(A)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.


S. No. I
b
= 0A I
b
= 5A I
b
= 10A
V
ce
(Volts) I
c
(mA) V
ce
(Volts) I
c
(mA) V
ce
(Volts) I
c
(mA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.

RESULT: The plotted practical input and output characteristics are similar to the theoretical
characteristics.


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Viva Questions

1. Draw the input/output characteristics of CB configuration of transistor?
2. Define the current gain for CE configuration & CB configuration?
3. Derive the relationship between and ?
4. Compare the performance of CB , CE & CC configuration on the basis of :
(a) Input resistance
(b) Output resistance
(c) Current gain
(d) Voltage gain
5. Explain the term base-width modulation or early effect?
6. Why CE is preferred over CB & CC configuration?
7. What is phototransistor?
8. Differentiate emitter, base & collector on the basis of their construction?
9. What is heat sink?
10. Draw the current analogy of the PNP transistor?


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EXPERIMENT NO. 5

OBJECTIVE: - To study the input and output characteristics of a CB Transistor


THEORY: In this circuit arrangement input is applied between emitter and base while the
output is taken across collector and base. Here, base of the transistor is common to both input
and output circuits and hence the name common base connection.

NPN TRANSISTOR PNP TRANSISTOR

The performance of the transistors, when connected in a circuit, may be determined from
their characteristic curves that related different dc current and voltages of a transistor. Such
curves are known as static characteristic curves. There are two important characteristics of a
transistor viz, input characteristics and output characteristics.
Input Characteristics :
In CB configuration, the curves plotted between emitter current I
E
and emitter base
voltage V
EB
at constant collector base voltage V
CB
is called input characteristics.
For a given value of V
CB
the curve is just like that of a forward biased PN junction because
emitter- base junction in forward biased mode is similar to a PN junction.
It is used to determine the input resistance of the transistor r
=
A v
EB
AI
E
o conson
CB

Increase in V
CB
, conduction is better, because large C-B (reverse bias) voltage cause the
depletion layer at the C-B junction to penetrate deeper into the base thus reducing the
distance and the resistance between EB and CB region.

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Output Characteristics :
In CB configuration the curve plotted between the collector current I
C
and collector
base voltage V
CB
at constant emitter current I
E
is called output characteristics.
In the active region, where CB junction is reverse biased, the collector current I
C
is almost
equal to the emitter current I
E
. The transistor is always operated in this region.
In the active region, the curves are almost flat. A very large change in V
CB
produces only a
tiny change in I
C
, it means that the circuit bias very high output resistance (r
o
).
When V
CB
becomes positive ie., CB junction forward biases the collected current I
C
(for a
given I
E
) decreases abruptly. This is the saturated region. In this region I
C
does not much
depend upon I
E
.
When I
E
=0, collector current I
C
is not zero although its value is very small, infact this is the
reverse leakage current ie., I
CBO
that flows in the collector circuit. r
o
=
A v
CB
AI
C
o conson I
L


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circuit.
2. Then set V
CB
3. After setting the V
CB
remove the connecting wire from voltmeter and let the knob K2
as it is.
terminal to set the value of V
BE
by using knob K1.
5. To see the value of I
E
corresponding to V
BE
connect point A with the white terminal
6. Plot the graph between different values of I
E
and V
BE
for the different values of V
CB
.


1. Firstly set the proper value of I
E
current by connecting point A to white terminal
value of I
C
.

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get the value of V
CB
.
5. Plot the graph between I
C
and V
CB
different values of I
E
to get the output
characteristics.

OBSERVATION TABLE:

S. No. V
CB
= 0V V
CB
= 1V V
CB
= 5V
V
EB
(volts) I
E
(mA) V
EB
(volts) I
E
(mA) V
EB
(volts) I
E
(mA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.


S. No. I
E
= 0mA I
E
= -5mA I
E
= -10mA
V
CB
(Volts) I
C
(mA) V
CB
(Volts) I
C
(mA) V
CB
(Volts) I
C
(mA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.

characteristics.


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Viva Questions

1. Define the current gain for CC configuration and CB configuration?
2. Define relationship between and ?
4. Differentiate Emitter, Base and Collector on the basis of their construction.
5. What is Load line Analysis?


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EXPERIMENT NO. 6

OBJECTIVE: - To study the input and output characteristics of a CC Transistor


THEORY: In this circuit arrangement input is applied between base and collector while the
output is taken across emitter & collector. Thus collector forms the terminal common to both
input and output.

NPN TRANSISTOR PNP TRANSISTOR
Input Characteristics :
In Common Collector configuration, the curve plotted between base current I
b
and
collector to base voltage V
cb
at constant collector to emitter voltage V
ce
is called input
characterstics.

Output Characteristics :

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In Common Collector configuration the curve plotted between emitter current I
e
and
collector to emitter voltage V
ce
at constant base current I
b
is called output characteristics.
The Common Collector arrangement gives very high input impedance and very low output
impedance and therefore its voltage gain is always less than unity. Hence this configuration is
seldom used for amplification. However, owing to relatively high input impedance and low
output impedance, this configuration is primarily used for impedance matching, ie., for
driving low impedance from high impedance source. This configuration is also called emitter
follower.



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circuit.
2. Then set V
ce
3. After setting the Vice remove the connecting wire from voltmeter and let the knob K2
as it is.
terminal to set the value of Vcb by using knob K1.
5. To see the value of Ib corresponding to Vcb connect point A with the white terminal
6. Plot the graph between different values of Ib and Vcb for the different values of Vce.


1. Firstly set the proper value of Ib current by connecting point A to white terminal
value of Ie.
get the value of Vce.
5. Plot the graph between Ie and Vce different values to get the output characteristics.


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OBSERVATION TABLE:

S. No. Vce = 0V Vce = 1V Vce = 5V
V
cb
(volts) I
b
(A) V
cb
(volts) I
b
(A) V
cb
(volts) I
b
(A)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.


S. No. I
b
= 0A I
b
= 5A I
b
= 10A
V
ce
(Volts) I
e
(mA) V
ce
(Volts) I
e
(mA) V
ce
(Volts) I
e
(mA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.

characteristics.


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Viva Questions

1. Define the current gain for CC configuration and CB configuration?
2. Define relationship between and ?
4. Why CC is not preferred over CE and CB configuration?
5. Describe diode analogy for BJT.


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EXPERIMENT NO.7

OBJECTIVE: To study the performance of half wave and full wave rectifier.

APPARATUS REQUIRED: Rectifiers trainer kit, connecting wires, Cathode Ray
Oscilloscope, BNC-crocodile and connecting leads.

THEORY: - In the field of electronics almost all the devices required the DC source so to
convert the main AC supply into DC we need some type of electronic device too. Rectifiers
are the devices which are used to convert the AC signal to DC signal
A device which is used to convert a sinusoidal input waveform (whose average value is zero
into a unidirectional wave form which has a constant peak value is called rectifier.
The basic principle of the rectifier is behind the working of the diode which conducts in only
one direction. On the basis of the number and configuration of the diodes rectifiers are
divided into following types:-
Half wave rectifier
Full wave rectifier
Centre tapped full wave rectifier
Bridge type full wave rectifier
Half wave rectifier: As the name suggest half wave rectifier do the half wave rectification
only. It uses single diode which has zero resistance in forward direction and infinite
resistance in reverse direction. In this way it works as a short circuit in the positive half cycle
of sinusoidal wave and as a open circuit in negative half cycle.

Parameters of half wave rectifier:
Average value of output voltage(V
dc
)=V
m
/=0.318V
m
(V
m
is the peak value of ac
input voltage)
Average value of output current(I
dc
)=I
m
/=0.318I
m
(I
m
is the value of load current)
Peak inverse voltage(PIV)=V
m

Full wave rectifier: As the name suggest full wave rectifier do the full wave rectification this
configuration of rectifiers uses multiple diodes for the better output .on the basis of that there
are two types of full wave rectifier :
Center tapped full wave rectifier : as the name suggest in this type of rectifier the
transformer is center tapped, in this there are two diodes .in the positive direction
diode D1 conducts and in the negative direction D2 conducts In this way we get the
full wave rectification..

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Parameters of center tapped full wave rectifier:
dc
)=2V
m
/=0.636V
m
(V
m
is the peak value of ac
input voltage)
dc
)=2I
m
/=0.636I
m
(I
m
is the value of load current)
Peak inverse voltage(PIV)=2V
m

Bridge type full wave rectifier: As the name suggest in the bridge type rectifier the
diodes are configured in the bridge pattern .in this type of rectifier we use four diodes
int the bridge form.this configuration decrease the value of PIV

Parameters of bridge type full wave rectifier:
dc
)=2V
m
/=0.636V
m
(V
m
is the peak value of
ac input voltage)
dc
)=2I
m
/=0.636I
m
(I
m
is the value of load
current)
Peak inverse voltage(PIV)=V
m


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PROCEDURE: Trainer Kit diagram:

Half wave rectifier:
1. Connect the A terminal with B terminal and E with F to complete the input circuit by
using diode D1.
2. For taken the output connect any value from the given value of resistances between I
and J terminal.
3. Connect the output terminal of trainer kit circuit with the CRO input terminal and
view the output.
4. We can also use the given filter circuit(C1 and C2) to fine the output of the rectifier.
Full wave rectifier:
1. Now connect the circuit for the full wave rectification by using two diodes.
2. For this connect A terminal with B terminal and C terminal with D terminal. Also
connect G with H and E with F and complete the circuit.
3. Rest of the procedure is same as half wave rectifier.
4. Instead of the two diodes we can also use bridge configuration of the rectifier.

RESULT: The output of circuit viewed practically is same as its theoretical output.


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Viva Questions

1. What are the advantages of a bridge rectifier as compared to a full wave center
tapped rectifier?
2. Explain following
(a)Rectified d.c. voltage.
(b) Average d.c. load current
3. Define (i) a ripple factor (ii) rectification efficiency (iii) transformer utilization
factor
4. Drive the formula for ripple factor?
5. Compare half wave rectifier, full wave rectifier & bridge rectifier?
6. What is filter?
7. What is the need of filter in rectifiers?
8. Explain inductor filter & capacitor filter?
9. Explain inductor capacitor (LC) filter?
10. Explain following :
(a) Ripple factor
(b) Peak inverse voltage


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EXPERIMENT NO.8

AIM :- To study the input output characteristics of the MOSFET.

THEORY :- A bipolar juntion transistor (BJT) is a current controlled device & requires base
current for current flow in the collector , but a power MOSFET is a voltage controlled device.
There are two types of MOSFET (i) Depletion MOSFET
(ii) Enhancement type MOSFET

DEPLETION TYPE MOSFET : - There are two types of Depletion MOSFET :-
(a) P-type Depletion MOSFET
(b)N- type depletion MOSFET
N- type depletion MOSFET is formed by a slab of P-type material & is referred to as the
substrate with two heavily doped n
+
silicon for low resistance connection. There are three
terminals in the MOSFET these are gate , drain & source. The gate is connected to a metal
connected to a metal contact surface but remains insulated from the n-channel by a very thin
silicon dioxide(SIO
2
) layer. The source and drain terminals are connected through metallic to
n-doped regions linked by an n-channel.

Initially V
GS
voltage is set to zero volts by the direct connection from one
terminal to the other & a voltage V
DS
is applied across the drain to source terminal. The result
is an attractive for the positive potential at the drain by the free electrons of n-channel & a
current similar to that established through the channel of the JFET. When V
GS
=0 V the value
of current is called I
DSS.
When V
GS
has been set at a negative voltage such as 1v. The
negative potential at the
gate will tend to pressure electrons toward the P-type substrate & attract holes from P-type
substrate . Depending on the magnitude of the negating bias established by V
GS
,a level of
recombination between electron & holes will occur that will reduce the no. of free electrons in
the n-channel available for conduction. The more negative the bias, high the rate of
recombination & lower the value of current.

n channel depletion type MOSFET

ENHANCEMENT TYPE MOSFET :- Construction of Enhancement MOSFET is similar to
Depletion MOSFET except that there is no physical channel is present between drain &
source. There are two types of enhancement type MOSFET

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(a) P-type enhancement type MOSFET
(b) N-type enhancement type MOSFET
In N-type enhancement type MOSFET when the gate to source( V
GS
) is zero ,
the V
DS
supply tries to force free electrons from source to drain. But the present of P-region
does not permit the electrons to pass through it. Thus there is no drain current for V
GS
=0.Now if some positive is applied at the gate , it induces a negative charge in the P-type
substrate just adjacent to the silicon dioxide layer. The induced negative charge is produced
by attracting the free electrons from the source. When the gate is positive enough, it can
attract a number of free electrons. This forms a thin layer of N-type channel in the P-type
substrate. The minimum gate to source (V
GS ),
Which produces inversion layer, is called
threshold voltage and is designated by the symbol V
GS(th)
When the voltage V
GS
is less than
V
GS(th)
, no current flows from drain to source. However, when the voltage V
GS
is greater than
the V
GS(th)
, current flows from gate to source.

n-channel Enhancement type MOSFET


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transfer characteristics

PROCEDURE: For plotting the output characteristics
1. Connect the terminal A to B to complete the circuit Mosfet characteristics.
2. Now connect the voltmeter1 across the VGS by connecting terminal I with the black
terminal and terminal H with the other terminal of the voltmeter1 to set the value of
VGS.
3. Now remove the connections.

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4. Now again connect the voltmeter2 across the VDS by connecting E terminal with the
black terminal and terminal D with the other terminal.
5. Also connect the ammeter across the ID by connecting terminal C with the black
terminal and terminal D with the terminal.
6. Now vary the value of VDS using knob K2 and note down the corresponding value of
current ID.
7. Tabulate the result for different values of VGS.

S.NO. VGS= VGS=
VDS ID VDS ID
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.

For plotting the transfer characteristics:
1. Connect the terminal A and B with each other.
2. Set the definite value of VDS by connecting voltmeter2 across it same as above
steps using knob K2
3. Now remove the connections.
4. Again connect the voltmeter1 across the VGS and ammeter across the ID
5. Now vary the VGS value and note down the value of corresponding current ID.
6. Tabulate the result.

OBSERVATION TABLE:

S.NO. VDS= VDS=
VGS ID VGS ID
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.

RESULT: The plotted output characteristics of the Opamp is same as the theoretical output
characteristics


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Viva Questions

1. Exlapin FET(Field effect transistor)?
2. Explain JFET(junction field effect transistor)?
3. Compare FET(Field effect transistor) with BJT(Bipolar junction
transistor)?
4. What is the difference between enhancement MOSFET & depletion
MOSFET?
5. Draw the symbol of enhancement MOSFET & depletion MOSFET?
6. What is the advantage of enhancement MOSFET over depletion
MOSFET?
7. Draw the transfer characteristic of depletion MOSFET?
8. What is inversion layer?
9. Explain threshold voltage?
10. What are the applications of MOSFET?


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EXPERIMENT NO.9

AIM :- To study the input output characteristics of Silicon controlled rectifier.

APPARATUS REQUIRED :- Trainer kit , Multimeter, Connecting leads.

THEORY :- A silicon controlled rectifier(SCR) consist of four semiconductor layers
forming a PNPN structure. It has three PN junction namely J
1 ,
J
2
& J
3
.There are three
terminals called anode(A),cathode(K) & gate(G).

Symbol
SCR can be biased in two modes depending upon the polarity of the applied voltage across
Anode and cathode terminals. When the anode is positive , with respect to the cathode, the
SCR is said to be forward biased. In this mode, the junction J
1
& J
3
are forward biased and
junction J
2
is reverse biased.

There is no current (except leakage current) through the SCR. Therefore the SCR is in OFF
state. Under this condition , the device offers a very high resistance .However, if the applied
forward voltage is increased , a certain critical value called forward break over voltage (V
BO
)
is reached at which the junction J
2
breaks down. This causes the SCR to quickly switch to its
ON position. Under this condition SCR offers very small resistance and the voltage very
across it, drops to a low value. In the ON state , the current
Through the SCR is very large and is controlled by the applied voltage and external
resistance.
The SCR can be turned ON by several methods one of the most commonly used
methods is gate triggering. In this method the SCR is operated with an anode voltage slightly
less than the rated forward break over voltage and is triggered into conduction by a low
power gate pulse. It may be noted that once the SCR is switched ON, the gate has no further
control on the device current. Now to turn OFF the SCR , the anode current must be reduced
below the holding current level.


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forward biased
If the battery connection of the applied voltage is reversed, the SCR is
reversing biased. Under this condition, the junction J1

& J
3
are reverse biased and junction J
3
is forward biased. When the applied reverse voltage is small the SCR is OFF and therefore no
current (except leakage current) flows through the device. If the reverse voltage is increased
to breakdown voltage, the junction J
1
will breakdown due to avalanche effect.This cause a
large current to flow through the SCR.

Reverse biased

V I characteristics of SCR (Silicon controlled rectifier)


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PROCEDURE:
1. Connect the terminal A and B also connect the terminal D and E with each other to
complete the circuit.
2. Connect the terminal F with the red terminal of the voltmeter and the terminal G with
the black terminal to measure the value of voltage.
3. Connect the terminal H with the black terminal of the ammeter and D with the other
terminal.
4. Adjust the gate voltage power supply (coarse knob (K1)) for SCR firing between 5 to
25 volt approximately.
5. Set fine (K2 knob) for some fixed gate voltage
6. Now slowly increase anode voltage from ) to break over & note the corresponding Va
& Ia readings
7. Increase gate voltage by Fine knob(K2) & repeat steps 1 to 6
8. Plot the graph between Va and Ia
9. Make SCR ON by providing gate voltage
10. Now remove the gate voltage power supply & keep gate open.
11. Slowly reduce the anode current by reducing anode voltage till SCR turns OFF.
12. Note that the reading just before turning OFF the SCR.
13. This is the holding current of SCR


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OBSERVATION TABLE:

S. NO. V
A
(volts) I
A
(mA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.

RESULT: The plotted VI characteristics of the SCR is same as the theoretical V I
characteristics.


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Viva Questions

1. Explain two transistor model for SCR?
2. Explain the methods by which SCR turn ON?
3. Explain Holding current?
4. Explain latching current?
5. What are the applications of SCR?
6. What is the difference between SCR & Triac?
7. What is thyristor?
8. Explain different types of SCR?
9. Explain the methods by which SCR turn OFF?
10. Explain the ratings of SCR?


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EXPERIMENT NO.10

AIM: - To verify the transfer characteristics and output characteristics of Field Effect
Transistor (FET)

APPARATUS REQUIRED :- Trainer kit , Multimeter, Connecting leads.

THEORY: -


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Transfer Characteristics:-
These curve gives relationship between drain current I
D
and gate to source Voltage V
GS
for
different values of drain to source voltage V
DS
.

Procedure:-
Transfer Characteristics: -
1. Set Vds to a proper value say 1V by connecting the point F with white terminal adjacent to
voltmeter and point G with Black terminal using connecting wires and adjusting the Knob K2.
2. After selecting the Vds remove the connecting wire from voltmeter and let the knob K2 as it
is.
3. Next connect point a with the white terminal of voltmeter and point 1 with the black terminal
to set the value of Vgs by using knob K1.
4. To see the value of Id corresponding to Vgs connect point A with the white terminal of
ammeter and point B with the black terminal.
5. Plot the graph between values Id and Vgs for the different values of Vds.

Drain Characteristics: -
1. Firstly set the proper value of Vgs say 0V by connecting point to a white terminal adjacent to
voltmeter and point H to the black terminal and adjusting the knob K1.
3. Connect point D with the black terminal and point D with the white to get the value of Id.
4. Connect the point F with the black terminal and point G with the white terminal to get the
value of Vds.
5. Plot the graph between Id and Vds different values to get the output.


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Observation Table:-
Transfer Characteristics :-
S. NO. V
GS
(volts) I
D
(uA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.

Output Characteristics :-
S. No. V
GS
= 0V V
GS
= 1V V
GS
= 3V
V
DS
(volts) I
D
(mA) V
DS
(volts) I
D
(mA) V
DS
(volts) I
D
(mA)
1.
2.
3.
4.
5.
6.
7.
8.
9.
10.
Result :- The plotted practical graph is similar to the theoretical characteristics.
+
-
- +
+
-
V1
Vgs
Id
Vds
V2
K1
K2
Voltmeter
Ammeter
mA uA
Voltmeter


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Viva Questions

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