IES : 2008 1 of 12

ELECTRONICS AND TELECOMMUNICATION ENGINEERING

PAPER-I In the circuit show above, what is he voltage

vab(t)?
1. dv1
a. +v1
dt
b. v1
dv1
c. + RCv1
In the circuit show above, the switch is open dt
for a long time and closed at time t = 0. What dv
is the current through the switch after the d. RC 1 + v1
dt
switch is closed? Ans. d
a. Zero 5.
b. 1 A
c. 2 A
d. 5 A
Ans. a
2.

In the circuit show above, when is the power

absorbed by the 4 Ω resistor maximum?
a. R = 0
In the circuit shown above, the switch is
b. R = 2 Ω
closed at t = 0. What is the initial value of the
c. R = 4 Ω
current through the capacitor?
a. 0.8 A d. R = ∞
b. 1.6 A Ans. a ur
c. 2.4 A 6. The line integral of the vector potential A
d. 3.2 A around the boundary of a surface S represents
Ans. a which one of the following?
3. Consider a circuit which consists of resistors a. Flux through the surface S
and independent current sources, and one b. Flux density in the surfaces S
independent voltage source connected between c. Magnetic field intensity
the nodes i, j. The equations are obtained for d. Current density
voltages of n unknown nodes with respect to Ans. b
one reference node in the form 7. What is the electric flux density ( in μ C/m2) at
⎡V1 ⎤ ⎡M⎤ a point (6, 4, -5) caused by a uniform surface
⎢V ⎥ ⎢M⎥ charge density of 60 μC/m2 at a plane x = 8?
[Δ ] ⎢ 2 ⎥ = ⎢ ⎥ a. -30 ax
⎢ M ⎥ ⎢M⎥
⎢ ⎥ ⎢⎥ b. -60 ax
⎣Vn ⎦ ⎣M⎦ c. 30 ax
What are the elements of the Δ?
d. 60 ax
a. All conductances
b. All resistances Ans. b
c. Mixed conductances and constants 8. An infinitely along straight conductor located
d. Mixed conducances and resistance along Z-axis carries a current I in the +ve Z-
Ans. a direction. The magnetic field at any point P in
4. the X-Y plane is in which direction?
a. In the positive Z-direction
b. In the negative Z-direction
c. In the direction perpendicular to the radial
line OP (in X-Y plane) joining the origin
O to the point P
d. Along the radial line OP
 2 of 12
Ans. c Which of the statements given above
9. A 5 A current enter a right circular cylinder of is/are correct?
5 cm radius. What is the linear surface current a. 1 only
density at the end surface? b. 2 only
a. (50/π)A/m c. Both 1 and 2
b. (100/π)A/m d. Neither 1 nor 2
c. (1000/π)A/m Ans. c
d. (2000/π)A/m 15. In a LDVT, here are two secondary coils
Ans. a which are connected for a single output.
10. Of two concentric along conducting cylinders, Which one of the following is correct?
the inner one is kept at a constant positive a. The coils are in series and in phase
potential +V0 and the outer one is grounded. opposition
What is the electric field in the space between b. The coils are in parallel and in phase
the cylinders/ opposition
a. Uniform and directed radially outwards c. The coils are in series and in the same
b. Uniform and directed radially inwards phase condition
c. Non-uniform and directed radially d. The coils are in parallel and in the same
outwards phase condition.
d. Non-uniform and directed parallel to the Ans. a
axis of the cylinders. 16. A resistance strain gauge of gauge factor 2 is
Ans. c used as a transducer element. Neglecting
11. In a charge-free space, the Poisson’s equation piezoresistive effect, what is the value of
results in which one of the following? Poisson’s ratio?
a. Continuity equation a. 0.5
b. Maxwell’s equation b. 1
c. Laplace equation c. 1.6
d. None of the above d. 2
Ans. c Ans. a
12. Consider the following statements relating to 17. Match List I with List II and select the correct
the microstrip lines: answer using the code given below the lists:
1. There is no radiation loss problem in List I
microstrip lines. (Thermo couple)
2. Modes on microstrip line are only quasi- A. Copper Constantan
transverse electric and magnetic B. (Platinum Rhodium) Platinum
3. Microstrip line is also called as open strip C. (Rhodium Indium) Indium
line. D. Iron-Constantan
Which of the statements given above are List II
correct? (Temperature range)
a. 1, 2 and 3 1. -2000C to +850 0C
b. 1 and 2 only 2. -2000C to +350 0C
c. 1 and 3 only 3. 00C to 10000C
d. 2 and 3 only 4. 12000C to 2000 0C
Ans. d Code:
13. A lossless transmission line of characteristic A B C D
impedance Z0 and length 1 < λ/4 is terminated a. 1 4 3 2
at the loaded end by an open circuit. What is b. 2 3 4 1
its input impedance Zs? c. 1 3 4 2
a. Zs = j Z0 tan βl d. 2 4 3 1
Ans. b
b. Zs = j Z0 cot βl
18. Which one of the following statements is not
c. Zs = -j Z0 tan βl
correct?
d. Zs = -j Z0 cot βl a. Data loggers are usually of digital types
Ans. d b. A digital voltmeter is essentially and A-D
14. Consider the following elements associated converter
with boundary conditions between two media: c. A servo-type potentiometric recorder has a
1. Normal component of B is continuous at frequency response better than that of a
the surface of discontinuity. galvometric recorder
2. Normal component of D may or may not d. In digital transducers, there are ergonomic
be continuous. advantages in presenting digital data.
 3 of 12
Ans. c d. 2 1 4 3
19. A coil is turned to resonance of 500 kHz with Ans. d
a resonating capacitor of 36 pF. At 250 kHz, 23. Two capacitances, C1, = 150 ± 2.4 μF and C2,
the resonance is obtained with resonating = 120 ± 1.5 μF are connected in parallel. What
capacitors of 160 pF. What is the self- is the limiting error of the resultant
capacitance of the coil? capacitance C?
a. 2.66 pF a. 0.9 μF
b. 5.33 pF b. 1.95 μF
c. 8 pF c. 3.9 μF
d. 10.6 pF d. 4.8 μF
Ans. b Ans. c
20. A compensated probe of a CRO contains 24. The expression for mean torque T of an
which of the following? electrodynamic wattmeter can be expressed as
1. An amplifier
T ∝ MaVbZc, where M is mutual inductance
2. R-C network
between fixed and moving coils, V is applied
3. Only resistive network
voltage and Z is impedance of coil. What are
4. Only capacitive network
the value of the constants a, b and c?
Select the correct answer using the code given
a. a = 1, b = 2 and c = -2
below:
b. a = 1, b = 2 and c = -1
Code:
c. a = 1, b = -2 and c = 2
a. 1 and 2 only
d. a = 2, b = 2 and c = -1
b. 2 only
Ans. a
c. 3 only
25. If R, L and C are the parameters of a resistor,
d. 4 only
what is the condition for the resistor to be non-
Ans. d
inductive?
21. The accuracy of a 0.10 mA meter is ±2%.What a. L = CR
is its accuracy while taking a reading of 5mA? b. L = CR2
a. ± 0.5% c. C = LR2
b. ± 1% d. C = R/L
c. ± 2% Ans. b
d. ± 4% 26. What precaution(s) is/are required for absolute
Ans. d measurement of current by Rayleigh current
22. Match List I with List II and select the correct balance?
answer using the code given below the lists: 1. Precision balance of special form must be
List I used for the accuracy of measurement
(Term) 2. The flexible leads, used for taking current
A. Relative error into the moving coil, must not expert
B. Precision appreciable torque upon the moving
C. Calibration system
D. Resolution Select the correct answer using the code given
List II below:
(Statement) Code:
1. The ability of the device to give identical a. 1 only
output when repeat measurements are b. 2 only
made with the same input signal c. Both 1 and 2
2. The ratio of difference between measured d. Neither 1 and 2
value and the true value to the true value Ans. c
of the measured 27. In a rectangular waveguide
3. The smallest increment in measured that a. TE and TEM waves can exist but TM
can be detected with certainty by the waves cannot exist
instrument b. TM and TEM waves can exist but TE
4. The process of making adjustments on the waves cannot exist
scale so that the instrument readings c. TE and TM waves can exist but TEM
conform to an accepted standard waves cannot exist
Code: d. TE, TM and TEM all can exist.
A B C D Ans. c
a. 2 3 4 1 28. Which one has the lowest attenuation in a
b. 4 1 2 3 circular waveguide?
c. 4 3 2 1 a. TM11
 4 of 12
b. TE11 Ans. a
c. TE10 34. Which of the following capacitors are made
d. TE01 use of widely for a capacitance application in
Ans. d monolithic ICs?
29. In a parallel plate waveguide, what is the 1. MOS capacitor
principal wave? 2. Collector-Substrate capacitor
a. TEM wave 3. Collector-Base capacitor
b. T wave 4. Base-Emitter capacitor
c. TM wave Select the correct answer using the code given
d. Combination of TE and TM waves having below:
axial components of both electric and Code:
magnetic fields a. 1 and 2 only
Ans. d b. 2 and 3 only
30. According to Poynting theorem, the vector c. 3 and 4 only
ur uur
product E × H is a measure of which one of d. 1 and 4 only
Ans. a
the following?
35. In a network containing active components,
a. Stored energy density of the electric field
output voltage
b. Stored energy density of the magnetic
a. will always be greater than input voltage
field
b. will always be equal to the input voltage
c. Power dissipated per unit volume
c. can be less than or greater than input
d. Rate of energy flow per unit area
voltage only
Ans. d
d. will be less than, equal to or greater than
31. If the total input power to an antenna is Wt, the
input voltage
radiated power is Wr and the radiation intensity
Ans. c
is φ, then match List I with List II and select 36. An intrinsic semiconductor is doped lightly
the correct answer using the code given below with p-type impurity. It is found that the
the lists: conductivity actually decreases till a certain
List I doping level is reached. Why does this occur?
A. Power gain a. The mobility of holes decreases
B. Directive gain b. The mobility of both electrons and holes
C. Average power radiated decreases
D. Efficiency of the antenna c. The hole density actually reduces
List II d. Effect of reduction in electrons due to
1. Wr/Wt increase in holes compensates more than
2. Wr/4π the effect of increase in holes on
3. 4πφ/Wt conductivity
4. 4πφ/Wr Ans. b
Code: 37. Assuming that the electron mobility in
A B C D intrinsic silicon is 1500 cm2/Vs at room
a. 3 4 2 1 temperature (T=300 K) and the corresponding’
b. 4 3 2 1 volt equivalent of temperature’ VT = 25.9 mV,
c. 3 4 1 2 what is the approximate value of the electron
d. 4 3 1 2 diffusion constant?
Ans. a a. 40 cm2/s
32. When does the maximum radiation for an end- b. 4 cm2/s
fire array occur? c. 400 cm2/s
a. Perpendicular to the line of the array only d. 4000 cm2/s
b. Along the line of the array only Ans. a
c. At 450 to the line of the array 38. The ‘voltage stability with time’ of reference
d. Both perpendicular to and along the line of diodes incorporating Zener diodes is
the array comparable to that of which of the following?
Ans. b a. Dry cells
33. As the aperture area of an antenna increases, b. Nickel-cadmium cells
its gain c. Lead-acid accumulator batteries
a. Increases d. Conventional standard cells
b. Decreases Ans. c
c. Remain steady
d. Behaves unpredictably
 5 of 12
39. In a MOSFET, the transfer characteristics can is 10 V. what percentage change in
be used to determine which of the following quiescent IC would occur, if early voltage VA is
device parameters? made ∞?
a. Threshold voltage and output resistance a. 10%
b. Trans-conductance and output resistance b. 20%
c. Threshold voltage and trans-conductance c. 5%
d. Trans-conductance and channel length d. 0%
modulation parameter Ans. d
Ans. c 46. While using a bipolar junction transistor as an
40. Assuming an operating temperature T = 300 K amplifier, the collector and emitter terminals
and corresponding VT = 25 mV, what is the got interchanged mistakenly. Assuming that
change in semiconductor silicon diode forward the amplifier and the biasing is suitably
voltage VD to produce a 10:1 change in diode adjusted, the interchange of terminals will
current ID, while operating in the forward bias result into which one of the following?
region (< 25 mA)? a. Zero gain
a. 60 mV b. Infinite gain
b. 120 mV c. Reduced gain
c. 180 mV d. No change in gain at all
d. 240 mV Ans. c
Ans. b 47. In n-channel enhancement MOSFET, at a
41. The doping concentration on the n-side of a p- fixed drain voltage
n junction diode is enhanced. Which one of the a. the drain current is maximum at zero gate
following will get affected? voltage and it decreases with applied
a. Width of the depletion region on n-side negative gate voltage
b. Width of the depletion region on p-side b. the drain current has a finite value at zero
c. Width of the depletion region on both gate voltage and it increases or decreases
sides with the applied voltage of proper polarity
d. No change in width of depletion regions c. the drain current is zero at zero gate
Ans. a voltage and it increases with the positive
42. When a junction diode is used as a half-wave applied gate voltage
rectifier with purely resistive load and d. the drain current is zero for negative bias
sinusoidal input voltage, what is the value of voltage to gate and it increases as negative
diode conduction angle (where φi is the gate bias is decreased in magnitude
ignition angle corresponding to the cut-in Ans. a
voltage)? 48. The data sheet for a certain JFET (Junction
a. π Field Effect Transistor) indicates that LDSS
b. π - φi (drain to source current with gate shorted) =
c. π - 2φi 15 mA and VGS (off) (cut-off value of gate to
d. Slightly greater than π source voltage)= -5 V. What is the drain
Ans. c current for VGS = -2 V?
43. In a step-graded p-n junction diode, what is the a. 58.8 mA
ratio of depletion region penetration depths b. 29.4 mA
into p and n regions (if the ratio of accentor to c. 9.6 mA
donor impurity atoms’ densities of 1:2)? d. 5.4 mA
a. 2 : 1 Ans. d
b. 4 : 1 49. What one of the following devices can be
c. 1 : 2 turned ‘ON’ of ‘OFF’ by applying gate signal?
d. 1 : 4 a. CSR
Ans. a b. SCS
44. What is the most noticeable effect of a small c. Triac
increase in temperature in the common emitter d. UJT
connected BJT? Ans. a
a. Increase in ICEO 50. Why is silicon dioxide (SiO2) layer used in
b. Increase in output resistance ICs?
c. Decrease in forward current gain a. To protect the surface of the chip from
d. Increase in forward current gain external contaminants and to allow for
Ans. a selective formation of the n and p regions
45. For a BJT, early voltage VA is 100 V. In by diffusion
common emitter configuration , eqiescent VCE
 6 of 12
b. Because it facilitates the penetration of the d 2 x(t ) dx(t )
desired impurity by diffusion c. m +b + kx(t ) + f (t ) = 0
c. To control the concentration of the dt 2 dt
diffused impurities
d. Because of its high heat conduction d 2 x(t ) dx(t )
d. m 2
+b − kx(t ) − f (t ) = 0
Ans. a dt dt
51. Why is the term ‘planner technology’ for Ans. a
fabrication of devices in ICs used? 56. If the state space equation of a system is
a. The variety of manufacturing processes by
⎡ −3 1 ⎤
which devices are fabricated, takes place x=⎢ ⎥x
through a single plane ⎣ 0 −2 ⎦
b. The aluminum contacts to the collector, and the initial state value x(0) = [10 – 0]T, the
base and emitter regions of the transistors steady-state value is [A ]T, what are the
in the ICs are laid in the same plane respective value of A and B?
c. The collector, base and emitter regions of a. 0, 0
the transistors in ICs are laid in the same b. -3, -2
plane c. 0, 1
d. The device looks like a thin plane wafer d. ∞, ∞
Ans. a Ans. a
52. In an optional fibre, the light beam propagates 57. Which one of the following function is a
due to which one of the following? periodic one?
a. Simply reflection of light at a boundary a. sin (10 πt) + sin (20 πt)
between two media b. sin (10 t) + sin (20 πt)
b. Refection of light in the medium c. sin (10 πt) + sin (20 t)
c. Total internal reflection at the boundary of d. sin (10 t) + sin (25 t)
the fibre Ans. a
d. Scattering of light in the medium 58. What is the average power for periodic non-
Ans. c sinusoidal voltage and currents?
53. Dispersion in an optical fibre used in a a. The average power of the fundamental
communication link is of which type? component alone
a. Angular dispersion b. The sum of the average powers of the
b. Modal dispersion harmonics excluding the fundamental
c. Chromatic dispersion c. The sum of the average powers of he
d. Dispersion arising due to structural sinusoidal components including the
irregularities in the fibre. fundamental
Ans. b d. The sum of the root mean square power of
54. If v-i characteristic of a circuit is given by v(t) the sinusoidal components including the
= ti (t) + 2, the circuit is of which type? fundamental
a. Linear and time invariant Ans. d
b. Linear and time variant 59. Which one of the following is the correct
c. Non-linear and time invariant relation?
d. Non-linear and time variant a. F(at) ↔ aF(ω/a)
Ans. d
b. F(at) ↔ aF(aω)
55.
c. F(t/a) ↔ aF(ω/a)
d. F(at) ↔ (1/a) F(ω/a)
Ans. d
60. The Fourier transform of a function is equal to
its two-sided Laplace transform evaluated
a. on the real axis of the s-plane
Which one of the following represents the b. on a line parallel to the real axis of the s-
linear mathematical model of the physical plane
system shown in the above figure? c. on the imaginary axis of the s-plane
d. on a line parallel to the imaginary axis of
d 2 x(t ) dx(t )
a. m 2
+b + kx(t ) = f (t ) the s-plane
dt dt Ans. c
d 2 x(t ) dx(t ) 61. For matching of a radio frequency coaxial line
b. m 2
+b + kx(t ) = 0 to a purely reactive load
dt dt a. quarter-wave transformer would work
better than stub matching
 7 of 12
b. stub matching would work better than s cos α + ω sin α
quarter wave transformer a.
s2 + ω 2
c. both quarter wave transformer and stub
ω
matching techniques would work equally b. cos α
well s + ω2
2

d. both quarter-wave transformer and stub s

matching techniques would fail c. sin α
Ans. b s + ω2
2

62. If an infinite homogeneous isotropic medium s sin α + ω cos α

d.
is modeled as an equivalent transmission line, s2 + ω 2
the characteristic impedance of the Ans. d
corresponding transmission line is known as 67. A two port network has z11 = 11/35, z12 = z21 =
its 2/35, z22 = 3/35. Its y11 and y12 parameter will,
a. characteristics impedance respectively, be
b. iterative impedance a. 3, -2
c. wave impedance b. 3, 2
d. intrinsic impedance c. 13, -2
Ans. d d. 13, 2
63. Match List I with List II with respect to the Ans. a
synthesis of R-C driving point function Z(s) = 68. A reciprocal two-port network is symmetrical
1/Y(s) and select the correct answer using the if
code give below the lists: a. ΔA = 1
List I b. A = C
(Form) c. z11 = z22
A. Foster I form d. Δy =1
B. Foster Ii form Ans. a
C. Cauer I form 69. Inside a waveguide with perfectly conducing
D. Cauer II form walls, any current present is in the form of
List II a. displacement current only
(Method) b. conduction current only
1. Continued fraction expansion of Z(s) c. partially displacement current and partially
around s = ∞ conduction current
2. Partial fraction expansion of Y(s)/s d. sometimes displacement current and
3. Continued fraction expansion of Z(s sometimes conduction current
around s = 0 Ans. a
4. Partial fraction expansion of Z(d) 70. Which one of the following is a passive
Code: transducer?
A B C D a. Piezoelectric
a. 1 2 4 3 b. Thermocouple
b. 4 3 1 2 c. Photovoltanic cell
c. 1 3 4 2 d. LVDT
d. 4 2 1 3 Ans. d
Ans. d 71. A 0-250V voltmeter has a guaranteed accuracy
64. The lowest and the highest critical frequencies of 1% full scale reading (deflection. The
of an R-L driving point impedance are, voltage measured by this instrument is 100V.
respectively The limiting error is given be
a. a zero, a pole a. 1.25%
b. a pole, a pole b. 255
c. a zero, a zero c. 0.25%
d. a pole, a zero d. 2.5%
Ans. a Ans. d
65. For an RC driving point impedance function 72. Which one of the following materials is not
ZRC(s) used as a piezoelectric transducer?
a. ZRC(0) ≥ ZRC(∞) a. Rochelle salt
b. ZRC(0) = ZRC(∞) only b. Lithium sulphate
c. ZRC(0) ≤ ZRC(∞) c. Barium titanate
d. ZRC(0) > ZRC(∞) only d. Tungsten oxide
Ans. d Ans. d
66. Laplace transform of sin (ωt + α)
 8 of 12
73. Which one of the following modulation Reason (R): The transfer function of a
techniques is the most efficient for pulse high-pass R-C circuit can be written as
telemetry? 1
a. PAM |H |= , θ = arc tan ( f1 / f )
1 + ( f1 / f )
2
b. PCM
c. PDM 1
d. PPM where f1 =
Ans. a 2π RC
Ans. b
Direction: 80. Assertion (A): VTVM gives more accurate
Each of the following seven (7) items consists of two statements, reading compared to the accuracy of PMMC
one labeled as ‘Assertion (A)’ and the other as ‘Reason (R)’. You type of indicating instrument used in it, while
are to examine these two statements carefully and select the measuring voltages across high resistances.
answers to these items using the code given below:
Code: Reason (R): The electronic circuits used in
(a) Both A and R are individually true and R is the correct VTVM make it more accurate by increasing its
explanation of A sensitivity.
(b) Both A and R are individually true but R is not the Ans. a
correct explanation of A
(c) A is true but R is false
81.
(d) A is false but R is true

74. Assertion (A): The z-transform of the output

of an ideal samplers is given by
K K K
Z ⎡⎣ f ( t ) ⎤⎦ = K 0 + 1 + 22 + .... + nn For the circuit shown in the above figure, what
z z z is the natural frequency?
Reason (R): The relationship is the result of a. 1 M rad/s
application of z = e-sT, where T stands for the b. 2 M rad/s
time gap between the samples. c. 3 M rad/s
Ans. c d. 5 M rad/s
75. Assertion (A): The Kirchhoff’s current law Ans. d
states that the sum of currents entering at any 82. Which one of the following relations for
node is equal to the sum of currents leaving power is not correct?
that node. a. P = VI cos θ
Reason (R): The Kirchhoff’s current law is b. P = Re part of [VI*]
based on the law of conservation of charge. c. P = Re part of [V*I]
Ans. a
d. P = VI sin φ
76. Assertion (A): In a linear network, the
Ans. d
superposition theorem can be used to calculate
83. What is the number of chords of a connected
power dissipation in a resistive branch of the
graph G of n vertices and e edges?
network.
a. n(n-1)/2
Reason (R): Superposition theorem is valid
b. n-1
for currents and voltages, and therefore is
c. e-n-1
valid also for power dissipation.
d. e-n+1
Ans. a
Ans. d
77. Assertion (A): Power factor is defined as the
84.
ratio of apparent power to the average power
in an a.c. circuit.
Reason (R): The magnitude of power factor is
always less than unity.
Ans. d
78. Assertion (A): Sinusoidal response in an a.c.
circuit can be represented in rectangular form
as v = Vcos θ + jVsin θ, exactly in a way What is the appropriate load resistor that
similar to vectors which we come across for draws maximum power from the source in the
force analysis in mechanics. circuit given above?
Reason (R): Phasors are nothing but vectors.
a. (5/6) Ω
Ans. a
b. (1/3) Ω
79. Assertion (A): A high-pass R-C circuit has a
lower cut-off frequency but does not have any c. (2/3) Ω
upper cut-off frequency. d. None of the above
 9 of 12
Ans. c 1
85. Match List I and List Ii and select the correct 89. If X(z) is with |z| > 1, then
1 − z −1
answer using the code given below the lists:
what is the corresponding x(n)?
List-I
a. e-n
(Theorem/Law)
b. en
A. Norton’s theorem
c. u(n)
B. Superposition theorem
d. δ(n)
C. Thevenin’s theorem
Ans. c
D. Kirchhoff’s current law
90. The convolution of f(t) with itself is given to
List II
∫ F (τ ) dτ . Then what is f(t)?
t
(Property) be
0
1. Effect of independent sources in a linear
circuit are additive a. The unit ramp function
2. Law of non-accumulation of change holds b. Equal to 1
good at nodes c. The unit step function
3. Current source with shunt resistor d. The unit impulse function
4. Voltage source with series resistor Ans. c
Code: 91. Which one of the following is the impulse
A B C D response of the system whose step response is
a. 2 4 1 3 given as C(t) = 0-5(1-e-2t)u(t)?
b. 3 1 4 2 a. e-2tu(t)
c. 2 1 4 3 b. 0.5δ(t) + e-2tu(t)
d. 3 4 1 2 c. 0.5δ(t) – 0.5 e-2tu(t)
Ans. b d. 0.05e-2t u(t)
86. Which of the following statements are Ans. a
associated with Thevenin’s theorem? 92. Match List-I with List-II and select the correct
1. Impedance through which current is answer using the code given below the lists:
required is removed and open-circuit List I
voltage is found [Function in time domain f(t)]
2. It is applicable to only d.c. circuits A. sin ω0tu ( t − t0 ) ]
B. sin ω0t ( t − t0 ) u ( t − t0 )
3. The network is replaced by a voltage
source and a series impedance remains
after removing the load impedance. C. sin ω0 ( t − t0 ) u ( t )
Select the correct answer using the code given
below: D. sin ω0tu ( t )
Code: List-II
a. 1 and 2 only [Corresponding Laplace transform F(s)]
b. 1 and 3 only ω0
c. 2 and 3 only 1.
s + ω02
2
d. 1, 2 and 3
Ans. b ⎧ ω0 ⎫ − t0 s
2. ⎨ 2 2⎬
e
⎩ s + ω0 ⎭
87. A random variable X is defined by the double
exponential distribution
Px(x) = ae-bx|x|, - ∞ < x < ∞ e − t0 s ⎛ ω ⎞
3. sin ⎜ ω0t0 + tan −1 0 ⎟
where a and b are +ve constants. What is the ⎝ s ⎠
s 2 + ω02
relation between a and b so that px(x) is a
probability density function? 1 ⎛ ω ⎞
4. sin ⎜ ω0t0 − tan −1 0 ⎟
a. a = b/2 ⎝ s ⎠
s 2 + ω02
b. b = a/2
c. a = b Code:
d. a = 1/b A B C D
Ans. a a. 3 1 4 2
88. What is the spectral density of white noise? b. 4 2 3 1
a. A constant c. 3 2 4 1
b. δ(ω) d. 4 1 3 2
c. [δ(ω)]2 Ans. c
93. A voltage having the Laplace transform
d. A step function is ω
Ans. a 4 s 2 + 3s + 2
is applied across a 2 H inductor
7 s 2 + 6s + 5
 10 of 12
having zero initial current. What is the current the energy gap value for the second
in the inductor at t = ∞? semiconductor?
a. Zero a. (1/3)eV
b. (1/5) A b. (3/2) eV
c. (2/7) A c. 3 eV
d. (2/5) A d. 9 eV
Ans. b Ans. a
94. What is the Laplace transform of cos ω0t? 100. Consider the following statements :
ω0 n-type of silicon can be
a. 1. formed by adding impurity of phosphorus
s + ω02
2
2. formed a adding impurity of arsenic
s 3. formed by adding impurity of boron
b.
s + ω02
2 4. formed by adding impurity of aluminum
Which of the statements given above are
ω correct?
c.
( s + ω0 )
2
a. 1 and 3 only
b. 3 and 4 only
s c. 1 and 2 only
d.
( s + ω0 )
2
d. 1, 2, 3 and 4 only
Ans. b Ans. c
95. If f(t) is an even function, then what is its 101. Which one of the following materials is not a
Fourier transform F(jω)? piezoelectric material?
∞ a. BaTiO3
a. ∫ f ( t ) cos ( 2ωt ) dt
0
b. Quartz
c. Rochelle salt
∞
b. 2 ∫ f ( t ) cos (ωt ) dt d. Yttrium garnet
0
∞
Ans. d
c. 2 ∫ f ( t ) sin (ωt ) dt 102. Consider the following statements for the
0
∞
piezoelectric materials:
d. ∫ f ( t ) sin ( 2ωt ) dt
0
1. All piezoelectric materials are ferroelectric
materials also
Ans. b 2. Piezoelectric materials have high value of
96. If the Fourier transform of f(t) is F(jω, then dielectric constant
what is the Fourier transform of f(-t)? Which of the statements given below is/are
a. F(jω) correct?
b. F(-jω) a. 1 only
c. –F(jω) b. 2 only
d. Complex conjugate of F(jω) c. Both 1 and 2
Ans. b d. Neither 1 nor 2
97. Epitaxial III-V group semiconductor Ans. b
compounds have which one of the following 103. Consider the following statements:
crystal structures? An insulating material shows polarization due
a. BCC to charged atoms. Its polarizability
b. FCC 1. decreases with applied electric field
c. Hexagonal 2. remains independent of temperature at a
d. Zinc blende given field
Ans. d 3. increases with applied electric field at
98. What is the unit of measurement of constant temperature
surface/sheet resistivity/ Which of the statements given above is/are
a. ohm/metre correct?
b. ohm metre a. 1 only
c. ohm/sq. metre b. 1 and 2 only
d. ohm c. 3 only
Ans. c d. 2 and 3 only
99. An intrinsic semiconductor with energy gap Ans. c
1eV has a carrier concentration N at 104. Consider the following statements for a
temperature 200 K. Another intrinsic photoconducting material:
semiconductor has the same value of carrier 1. Its dark conductivity is small
concentration N at temperature 600 K. What is
 11 of 12
2. With the absorption of radiation, equal mm and dielectric medium is air. The
numbers of electrons and of holes are inner diameter of the outer electrode is 4.1
produced mm. When 150 V is applied across the
Which of the statements given above is/are electrodes, what is the electric field intensity?
correct? a. 1500 V/mm
a. 1 only b. 3000 V/mm
b. 2 only c. 4500 V/mm
c. Both 1 and 2 d. 6000 V/mm
d. Neither 1 nor 2 Ans. a
Ans. c 111. A single even parity check but in telemetry
105. The transition temperature of super- data transmission has which capability?
conducting material is changed by which one a. Only detection of a single error
of the following? b. Both detection and correction of a single
a. Electric field error
b. Magnetic field c. Detection of even number of errors only
c. Mechanical stress d. Detection of any number of errors
d. None of the above Ans. a
Ans. b 112. When system noise is large and signal power
106. Width of resonance curve in an R-L-C is low in a telemetry system, what is the
network is determined by which one of the preferred form of modulation?
following? a. Pulse-width modulation
a. R alone b. Pulse-amplitude modulation
b. L alone c. Pulse-code modulation
c. C alone d. Pulse-position modulation
d. All R, L and C Ans. c
Ans. b 113. The resonance frequency of a quartz crystal
107. What is the typical value for the ratio of oscillator shows least variation with
current in a p-n junction diode in the forward temperature when the orientation of the crystal
bias and that in the reserve bias? is chosen to have
a. 1 a. X-cut
b. 10 b. Y-cut
c. 100 c. NT-cut
d. 1000 d. At-cut
Ans. d Ans. d
108. Consider the following statements for a p-n 114. The capacitance per unit volume is maximum
junction diode: for
1. It is an active component a. air capacitor
2. Depletion layer width decrease with b. mica capacitor
forward biasing c. ceramic capacitor
3. In the reserve biasing case, saturation d. electrolytic capacitor
current increases with increasing Ans. d
temperature 115. Consider the following statements pertaining
Which of the statements given above are to tunnel diodes:
correct? 1. Impurity concentration is high
a. 1, 2 and 3 2. Carrier velocities are low
b. 1 and 2 only 3. They have current controlled V-I
c. 2 and 3 only characteristics
d. 1 and 3 only Which of the statements given above is/are
Ans. a correct?
109. Illumination is measured using which one of a. 1 only
the following? b. 2 and 2 only
a. Millivoltmeter c. 1 and 3 only
b. Stroboscope d. 1 and 2 only
c. Luxmeter Ans. a
d. pH meter 116. Which one of the following is not a power
Ans. c MOSFET type?
110. A capacitive transducer is made of two a. Lateral construction (LMOSFET)
concentric cylindrical electrodes. The outer b. Lateral double diffusion construction
diameter of the inner cylindrical electrode is 4 (LDMOSFET)
 12 of 12
c. T construction (TMOSFET)
d. Enhancement mode construction
(EMOSFET)
Ans. d
n
117. A system defined by y [ n ] = ∑ x [k ] is an
k = −∞
example of
a. invertible system
b. memoryless system
c. non-invertible system
d. averaging system
Ans. a
118. Let x[n] be a real value sequence that is a
sample sequence of a wide-sense stationary
distance time random process. The power
density function of this signal is
a. real, odd and non-negative
b. real, even and non-negative
c. purely imaginary, even and negative
d. purely imaginary, odd and negative
Ans. b
119. Consider the following statements:
When a series R-L-C circuit is under
resonance
1. current is maximum through R
2. magnitude of the voltage across L is equal
to that across C
3. the power factor of the circuit is unity
Which of the statements given above are
correct?
a. 1, 2 and 3
b. 1 and 2 only
c. 2 and 3 only
d. 1 and 3 only
Ans. a
120. Consider the following statements with regard
to a complete incidence matrix:
1. The sum of the entries in any column is
zero
2. The rank of the matrix is n-1 where n is
the number of nodes
3. The determinant of the matrix of a closed
loop is zero
Which of the statements given above are
correct?
a. 1 and 2 only
b. 2 and 3 only
c. 1 and 3 only
d. 1, 2 and 3
Ans. d